Thickness-Dependent Micro-Raman Measurement of Poly-Si Films Prepared by Metal-Induced-Crystallization using a Ni Layer

2000 ◽  
Vol 609 ◽  
Author(s):  
Shin-ichi Muramatsu ◽  
Yasushi Minagawa ◽  
Fumihito Oka ◽  
Yoshiaki Yazawa
Keyword(s):  
Amorphous Silicon ◽  
Cross Section ◽  
Polycrystalline Silicon ◽  
X Ray Diffraction ◽  
X Ray ◽  
Metal Induced Crystallization ◽  
Raman Measurement ◽  
Si Films ◽  
Induced Crystallization ◽  
Uniform Composition

ABSTRACTRelatively thick amorphous silicon films for solar-cell applications were prepared by metal-induced-crystallization (MIC). Then, the thickness-dependent characteristics of micro-Raman spectra from a cross section of the prepared polycrystalline silicon (poly-Si) films were analyzed. It was found that Ni-induced crystallized films have a uniform composition that is 80% polycrystalline and 20% nanocrystalline. Also, the x-ray diffraction data show that a sub-mono-layer of Ni is sufficient for MIC of 6-μm-thick amorphous silicon (a-Si) films.

scholarly journals Fabrication of Large-Grain Thick Polycrystalline Silicon Thin Films via Aluminum-Induced Crystallization for Application in Solar Cells

2013 ◽  
Vol 2013 ◽  
pp. 1-4
Author(s):  
Hsiao-Yeh Chu ◽  
Min-Hang Weng ◽  
Chen Lin
Keyword(s):  
Solar Cells ◽  
Polycrystalline Silicon ◽  
X Ray Diffraction ◽  
X Ray ◽  
Second Stage ◽  
Silicon Thin Films ◽  
Si Films ◽  
Two Stages ◽  
Induced Crystallization ◽  
Aluminum Induced Crystallization

The fabrication of large-grain 1.25 μm thick polycrystalline silicon (poly-Si) films via two-stage aluminum-induced crystallization (AIC) for application in thin-film solar cells is reported. The induced 250 nm thick poly-Si film in the first stage is used as the seed layer for the crystallization of a 1 μm thick amorphous silicon (a-Si) film in the second stage. The annealing temperatures in the two stages are both 500°C. The effect of annealing time (15, 30, 60, and 120 minutes) in the second stage on the crystallization of a-Si film is investigated using X-ray diffraction (XRD), scanning electron microscopy, and Raman spectroscopy. XRD and Raman results confirm that the induced poly-Si films are induced by the proposed process.

Polysilicon Films Formed on Metal Sheets by Aluminium Induced Crystallization of Amorphous Silicon: Barrier Effect

2009 ◽  
Vol 1153 ◽  
Author(s):  
Prathap Pathi ◽  
Ozge Tüzün ◽  
Abdelilah Slaoui
Keyword(s):  
Amorphous Silicon ◽  
Electron Beam Evaporation ◽  
Degree Of Crystallinity ◽  
X Ray Diffraction ◽  
X Ray ◽  
Coated Metal ◽  
Metal Sheets ◽  
Different Temperatures ◽  
Si Films ◽  
Induced Crystallization

AbstractPolycrystalline silicon (pc-Si) thin films have been synthesized by aluminium induced crystallization (AIC) of amorphous silicon (a-Si) at low temperatures (≤500°C) on flexible metallic substrates for the first time. Different diffusion barrier layers were used to prepare stress free pc-Si films as well as to evaluate the effective barrier against substrate impurity diffusion. The layers of aluminum (Al) and then amorphous silicon with the thickness of 0.27 μm and 0.37 μm were deposited on barrier coated metal sheets by means of an electron beam evaporation and PECVD, respectively. The bi-layers were annealed in a tube furnace at different temperatures (400-500°C) under nitrogen flow for different time periods (1-10hours). The degree of crystallinity of the as-grown layers was monitored by micro-Raman and reflectance spectroscopies. Structure, surface morphology and impurity analysis were carried out by X-ray diffraction, scanning electron microscopy (SEM) and EDAX, respectively. The X-ray diffraction measurements were used to determine the orientation of grains. The results show that the AIC films on metal sheets are polycrystalline and the grains oriented in (100) direction preferentially. However, the properties of AIC films are highly sensitive to the surface roughness.

Aluminum-Induced Crystalization of Amorphous Silicon Films Deposited by Megnetron Sputtering

2013 ◽  
Vol 690-693 ◽  
pp. 1655-1658
Author(s):  
Jun Qian ◽  
Wei Min Shi ◽  
Jing Jin ◽  
Ji Rong Li ◽  
Yang Liao
Keyword(s):  
Raman Spectroscopy ◽  
Magnetron Sputtering ◽  
Amorphous Silicon ◽  
Energy Dispersive Spectroscopy ◽  
Nucleation And Growth ◽  
X Ray Diffraction ◽  
X Ray ◽  
Annealing Procedure ◽  
Si Films ◽  
Induced Crystallization

Aluminum–induced crystallization of sputtered a-Si under two-step annealing procedure on glass substrate is studied. A 200 nm thick a-Si film was deposited by magnetron sputtering on glass and a Al film of 150 nm was sputtered on top. The samples were annealed under two-step annealing procedure. Nucleation and growth of grains were followed by optical microscopy (OM), X-ray diffraction (XRD), Raman spectroscopy, and energy dispersive spectroscopy (EDS). Continuous (111) oriented poly-Si films were obtained with a Raman Peak at 520.8cm-1. The different annealing periods is discussed.

In-situ X-ray Diffraction study of Metal Induced Crystallization of amorphous silicon

2008 ◽  
Vol 516 (15) ◽  
pp. 4946-4952 ◽  
Author(s):  
W. Knaepen ◽  
C. Detavernier ◽  
R.L. Van Meirhaeghe ◽  
J. Jordan Sweet ◽  
C. Lavoie
Keyword(s):  
Diffraction Study ◽  
Amorphous Silicon ◽  
X Ray Diffraction ◽  
X Ray ◽  
Metal Induced Crystallization ◽  
Induced Crystallization

scholarly journals Effect of annealing time on aluminum-induced crystallization of silicon suboxide thin films

2019 ◽  
Vol 196 ◽  
pp. 00039
Author(s):  
Alexandr Zamchiy ◽  
Evgeniy Baranov ◽  
Sergey Khmel ◽  
Marat Sharafutdinov
Keyword(s):  
Thin Films ◽  
Amorphous Silicon ◽  
Optical Microscopy ◽  
Annealing Time ◽  
Polycrystalline Silicon ◽  
Thickness Ratio ◽  
X Ray Diffraction ◽  
X Ray ◽  
Silicon Suboxide ◽  
Induced Crystallization

Polycrystalline silicon (poly-Si) thin films were obtained by aluminium induced crystallisation of amorphous silicon suboxide (a-SiOx, x = 0.22) via annealing of a-SiO0.22/Al bilayer structures at 550 °C for 4 - 30 h. The a-SiO0.22/Al thickness ratio was approximately 1. According optical microscopy measurements, the crystallized fraction reached the saturation value of 85% after annealing for 20 h. The further increase in the annealing time didn’t lead to an increase in this value. X-ray diffraction measurements revealed that the formed poly-Si had a strong Si (111) preferred orientation.

The effect of substrate temperature and interface oxide layer on aluminum induced crystallization of sputtered amorphous silicon

2004 ◽  
Vol 808 ◽  
Author(s):  
Maruf Hossain ◽  
Husam Abu-Safe ◽  
Marwan Barghouti ◽  
Hameed Naseem ◽  
William D. Brown
Keyword(s):  
Substrate Temperature ◽  
Amorphous Silicon ◽  
Oxide Layer ◽  
Environmental Scanning ◽  
X Ray ◽  
Layer Sequence ◽  
Si Films ◽  
Induced Crystallization ◽  
Al Oxide ◽  
Aluminum Induced Crystallization

ABSTRACTThe effect of substrate temperature and interface oxide layer on aluminum induced crystallization (AIC) of amorphous silicon (a-Si) is investigated. The effect of substrate temperature on the AIC process was studied by changing the deposition temperate of a-Si from 200 to 300°C in a Al/a-Si/glass configuration. To study the effect of interface oxide on AIC, samples with a-Si/Al/glass, a-Si/Al-oxide/Al/glass, and Al/Si-oxide/a-Si/glass configurations were prepared at a fixed substrate temperature. The samples were annealed in the temperature range from 300°C to 525°C for different periods of time. The X-ray diffraction (XRD) patterns confirmed the crystallization of the a-Si films in the various configurations. From the analysis, we report that crystallization of a-Si happen at 350°C annealing temperature in the Al/a-Si/glass configuration. However, with or without the presence of Si-oxide at the interface, crystallization saturated after annealing for 20 minutes at 400°C. On the other hand, when Al-oxide is present at the interface, higher annealing temperatures and longer annealing times are required to saturate the crystallization of a-Si. Environmental Scanning Electron Microscope (ESEM) and Energy Dispersive X-Ray (EDX) mapping were used to study the surface morphology as well as the layer sequence after crystallization. This analysis revealed that Si-Al layer-exchange happens regardless of the deposited film configuration.

The Study of High Temperature Annealing of a-SiC:H Films

2006 ◽  
Vol 514-516 ◽  
pp. 18-22
Author(s):  
Shibin Zhang ◽  
Z. Hu ◽  
Leandro Raniero ◽  
X. Liao ◽  
Isabel Ferreira ◽  
...  
Keyword(s):  
High Temperature ◽  
Chemical Vapor ◽  
Nitrogen Atmosphere ◽  
High Temperature Annealing ◽  
X Ray Diffraction ◽  
X Ray ◽  
Metal Induced Crystallization ◽  
Vapor Deposition Technique ◽  
Crystallization Effect ◽  
Induced Crystallization

A series of amorphous silicon carbide films were prepared by plasma enhanced chemical vapor deposition technique on (100) silicon wafers by using methane, silane, and hydrogen as reactive resources. A very thin (around 15 Å) gold film was evaporated on the half area of the a- SiC:H films to investigate the metal induced crystallization effect. Then the a-SiC:H films were annealed at 1100 0C for 1 hour in the nitrogen atmosphere. Fourier transform infrared spectroscopy (FTIR), X-Ray diffraction (XRD), and scanning electron microscopy (SEM) were employed to analyze the microstructure, composition and surface morphology of the films. The influences of the high temperature annealing on the microstructure of a-SiC:H film and the metal induced metallization were investigated.

Analytical Studies of the Capping Layer Effect on Aluminum Induced Crystallization of Amorphous Silicon

2006 ◽  
Vol 910 ◽  
Author(s):  
Husam Abu-Safe ◽  
Abul-Khair M. Sajjadul-Islam ◽  
Hameed A. Naseem ◽  
William D. Brown
Keyword(s):  
Amorphous Silicon ◽  
Layer Structure ◽  
Silicon Layer ◽  
Nodule Formation ◽  
Capping Layer ◽  
X Ray ◽  
Metal Induced Crystallization ◽  
Layer Effect ◽  
Polysilicon Films ◽  
Induced Crystallization

AbstractThe effect of capping layer on metal induced crystallization of amorphous silicon was studied. Three sets of samples were prepared in this study. All samples had the basic layer structure of amorphous silicon layer deposited on a glass substrate. This was followed by a thin aluminum layer deposition. The second and third sets, however, had a third layer of amorphous silicon with thicknesses of 20 and 50 nm, respectively. These layers were deposited on top of the aluminum. The samples were annealed at 400°C for 15, 30 and 45 minutes. The crystallization fraction in the resultant films was analyzed using X-Ray diffraction, scanning electron microscopy, energy dispersive x-ray spectroscopy, and atomic force microscopy. It was observed that the capping layer reduces nodule formation improving the smoothness of the crystallized polysilicon films.

In situ x-ray diffraction study of metal induced crystallization of amorphous germanium

2009 ◽  
Vol 105 (8) ◽  
pp. 083532 ◽  
Author(s):  
W. Knaepen ◽  
S. Gaudet ◽  
C. Detavernier ◽  
R. L. Van Meirhaeghe ◽  
J. Jordan Sweet ◽  
...  
Keyword(s):  
Diffraction Study ◽  
X Ray Diffraction ◽  
Amorphous Germanium ◽  
X Ray ◽  
Metal Induced Crystallization ◽  
Induced Crystallization
Sign in / Sign up

Export Citation Format

Share Document