Defect Reduction in Laser Thermal Processing

2000 ◽  
Vol 610 ◽  
Author(s):  
Heather Banisaukas ◽  
Kevin S. Jones ◽  
Somit Talwar ◽  
Scott Falk ◽  
Dan F. Downey
Keyword(s):  
Dose Rate ◽  
Thermal Processing ◽  
Defect Density ◽  
Solid Phase ◽  
Amorphous Layer ◽  
Beam Current ◽  
Interface Roughness ◽  
Molten Layer ◽  
Order Of Magnitude ◽  
Laser Thermal Processing

AbstractLaser thermal processing (LTP) of Si involves laser melting a preamorphized layer in order to activate dopants and create a low resistivity contact. Defects are often observed to form during the recrystallization of the molten layer. This work focuses on varying the implant conditions and the pre-LTP annealing conditions in an effort to reduce these defect concentrations. The effect of very low temperature anneals (VLTA) and varying dose rates on the amorphous/crystalline interface roughness prior to LTP and the defect density after LTP have been investigated. The amorphous layer was created by a 10 keV 1×1015/cm2 Si+ implant. VLTA were conducted in a nitrogen gas furnace at temperatures between 400°C and 450°C for times between 5 minutes and 60 minutes. These anneals were chosen to minimize recrystallization of the amorphous layer by solid phase epitaxial regrowth. Variation in the dose rate from 0.06 mA/cm2 to 0.48 mA/cm2 was achieved by changing the beam current in the ion implanter. High-resolution crosssectional transmission electron microscopy (HR-XTEM) was used to analyze the effect of the VLTA or dose rate on the amorphous/crystalline interface. Results show that the 400°C 60 minute VLTA or the 0.48 mA/cm2 dose rate reduced the roughness of the amorphous/crystalline interface from over 45Å to around 15Å. This reduction in amorphous/crystalline interface roughness prior to laser thermal processing results in a reduction in LTP recrystallization defects by as much as an order of magnitude.

Varying implant dose rate for defect reduction in laser thermal processing

2001 ◽  
Vol 4 (4) ◽  
pp. 339-343 ◽  
Author(s):  
Heather Banisaukas ◽  
Kevin S Jones ◽  
Somit Talwar ◽  
Dan F Downey ◽  
Scott Falk
Keyword(s):  
Dose Rate ◽  
Thermal Processing ◽  
Defect Reduction ◽  
Laser Thermal Processing

Effects of Nonmelt Laser Annealing on a 5keV Boron Implant in Silicon

2000 ◽  
Vol 610 ◽  
Author(s):  
Susan Earles ◽  
Mark Law ◽  
Kevin Jones ◽  
Rich Brindos ◽  
omit Talwar
Keyword(s):  
Thermal Processing ◽  
Laser Annealing ◽  
Defect Density ◽  
Ramp Rate ◽  
Rapid Thermal Anneal ◽  
Extended Defect ◽  
Enhanced Diffusion ◽  
Post Annealing ◽  
Laser Anneal ◽  
Laser Thermal Processing

AbstractTo investigate the effects of ramp rate on the transient enhanced diffusion of boron in silicon, laser thermal processing (LTP) in the nonmelt regime has been investigated. A nonmelt laser anneal has been performed on a 5 keV, 1e15 boron implant. The implant energy of 5keV was chosen to simplify analysis. A rapid thermal anneal (RTA) at 1000°C and furnace anneals at 750 °C were used to show the effect of post annealing on the LTPd samples. Results show the sheet resistance drops by up to a factor of two for samples receiving the nonmelt LTP and the RTA compared with the samples just receiving the RTA. An increase in the hall mobility was also observed for the samples receiving the LTP. The nonmelt LTP was also shown to strongly affect the extended defect density. During post anneals, a higher density of smaller defects evolved in the samples receiving the LTP.

Laser Thermal Processing of Alternate Dopants in Silicon

2002 ◽  
Vol 717 ◽  
Author(s):  
Mark H. Clark ◽  
Kevin S. Jones ◽  
Michael Rendon ◽  
Kevin A. Gable
Keyword(s):  
Laser Pulse ◽  
Carrier Concentration ◽  
Thermal Processing ◽  
Solid Solubility ◽  
Amorphous Layer ◽  
Rapid Thermal Anneal ◽  
Background Doping ◽  
Laser Thermal Processing ◽  
P Type ◽  
Doping Type

AbstractTraditionally, the choice of dopant has been limited to those species with the highest solid-solubility, however, Laser Thermal Processing (LTP) is not fundamentally limited by solid-solubility. Therefore, it is of interest to evaluate alternate dopants that have previously been excluded due to low solid-solubility. To this end, alternate dopants of 14N, 121Sb (n-type), 27Al, 70Ga, and 115In (p-type) are compared to conventional dopants of As and B respectively, after LTP and post-LTP thermal processing. Dopants were implanted into <100> silicon wafers of opposite background doping type that had previously been amorphized to a depth of approximately 300 angstroms by a 15 keV 28Si+ implant of 1x1015/cm2 dose. An implant energy of 5 keV was sufficiently low to confine the implanted ions to the amorphous layer, with the exception of B, which required an energy of 2 keV. All species were implanted at doses of 1x1014, 5x1014 and 1.5x1015/cm2. Samples were LTP utilizing a 308 nm, 18 ns laser pulse with a fluence of 0.680 J/cm2. Post-LTP thermal processing of the samples consisted of a 900 °C rapid thermal anneal (RTA) in a nitrogen ambient for a duration ranging from spike to 300 seconds. Measurements of the sheet resistance, mobility and carrier concentration were taken after both LTP, and the post-LTP thermal processing. Experimental results show that LTP of alternate dopants increases the electrically active carrier concentration of Ga, Al and Sb above solid-solubility. Additionally, the amount of deactivation upon post- LTP thermal processing depends on the alternate dopant species.

Large-Grain Polysilicon Films with Low Intragranular Defect Density by Low-Temperature Solid-Phase Crystallization

2002 ◽  
Vol 715 ◽  
Author(s):  
Xiang-Zheng Bo ◽  
Nan Yao ◽  
J. C. Sturm
Keyword(s):  
Grain Size ◽  
Defect Density ◽  
Solid Phase ◽  
Solid Phase Crystallization ◽  
Transmission Electron ◽  
Cantilever Structure ◽  
Order Of Magnitude ◽  
Polysilicon Films ◽  
Silicon Interface ◽  
Atomic Rearrangement

AbstractSolid phase crystallization (SPC) of a-Si: H at 600°C was investigated by transmission electron microscopy (TEM) and Raman spectroscopy in a cantilever structure, where the underlying SiO2 was removed prior to the crystallization. The absence of the underlying oxide leads to both a higher grain size and a lower intragranular defect density. The grain size increases from 0.6 μm in regions with the underlying oxide to 3.0 μm without the underlying oxide, and the intragranular defect density decreases one order of magnitude from ∼ 1011 cm-2 to ∼ 1010 cm-2. The improvements in material quality without the lower a-Si/SiO2 interface are thought to be due to a lower nucleation rate and a lower tensile stress with an easier silicon atomic rearrangement at the lower silicon interface.

A Nylon Filter A-ELISA for Detecting Viruses in Water

1993 ◽  
Vol 27 (7-8) ◽  
pp. 135-141 ◽  
Author(s):  
Abidelfatah M. Nasser ◽  
Yehudit Elkana ◽  
Leon Goldstein
Keyword(s):  
Positive Result ◽  
Solid Phase ◽  
Enteric Viruses ◽  
High Specificity ◽  
Negative Results ◽  
Order Of Magnitude ◽  
Lower Background

This study was designed to develop a modification of A-ELISA performed in microtitre plates. Nylon filters have been utilized successfully as a solid phase for the performance of A-ELISA. The use of nylon filters resulted in lower background than nitro-cellulose and paper filters, indicating their suitability as a solid phase for developing A-ELISA. With enteric viruses, human rotaviruses and MS-2 coliphage, negative results were obtained, suggesting high specificity of the developed technique for poliovirus 1. The sensitivity of the developed A-ELISA has been shown to be at least one order of magnitude greater than ordinary ELISA. A positive result with the nylon A-ELISA can be obtained with samples containing 100-1000 pfu/ml of poliovirus. Up to date methods used for detecting viruses in water are elaborate, time consuming and costly. Applying the nylon A-ELISA may overcome some of these disadvantages.

Comparison of the Potency of 8-L-Arginine, 8-D-Arginine and 8-D-Homoarginine Vasopressin Analogs with Substituted Phenylalanine in Position 2

1994 ◽  
Vol 59 (6) ◽  
pp. 1439-1450 ◽  
Author(s):  
Miroslava Žertová ◽  
Jiřina Slaninová ◽  
Zdenko Procházka
Keyword(s):  
Amino Acid ◽  
Solid Phase Synthesis ◽  
Solid Phase ◽  
Basic Amino Acid ◽  
The Other ◽  
Side Chain ◽  
Inhibitory Potency ◽  
Phase Synthesis ◽  
Other Hand ◽  
Order Of Magnitude

An analysis of the uterotonic potencies of all analogs having substituted L- or D-tyrosine or -phenylalanine in position 2 and L-arginine, D-arginine or D-homoarginine in position 8 was made. The series of analogs already published was completed by the solid phase synthesis of ten new analogs having L- or D-Phe, L- or D-Phe(2-Et), L- or D-Phe(2,4,6-triMe) or D-Tyr(Me) in position 2 and either L- or D-arginine in position 8. All newly synthesized analogs were found to be uterotonic inhibitors. Deamination increases both the agonistic and antagonistic potency. In the case of phenylalanine analogs the change of configuration from L to D in position 2 enhances the uterotonic inhibition for more than 1 order of magnitude. The L to D change in position 8 enhances the inhibitory potency negligibly. Prolongation of the side chain of the D-basic amino acid in position 8 seems to decrease slightly the inhibitory potency if there is L-substituted amino acid in position 2. On the other hand there is a tendency to the increase of the inhibitory potency if there is D-substituted amino acid in position 2.

Laser thermal processing for shallow junction and silicide formation

1998 ◽  
Author(s):  
Somit Talwar ◽  
Gaurav Verma ◽  
Kurt H. Weiner ◽  
Carol Gelatos
Keyword(s):  
Thermal Processing ◽  
Silicide Formation ◽  
Shallow Junction ◽  
Laser Thermal Processing

Effect of Laser Thermal Processing on Defect Evolution in Silicon

2002 ◽  
Vol 717 ◽  
Author(s):  
Erik Kuryliw ◽  
Kevin S. Jones ◽  
David Sing ◽  
Michael J. Rendon ◽  
Somit Talwar
Keyword(s):  
Point Defects ◽  
Thermal Processing ◽  
Defect Formation ◽  
Secondary Ion Mass Spectrometry ◽  
Laser Energy ◽  
Process Window ◽  
Loop Formation ◽  
Transmission Electron ◽  
Ultra Shallow Junctions ◽  
Laser Thermal Processing

AbstractLaser Thermal Processing (LTP) involves laser melting of an implantation induced preamorphized layer to form highly doped ultra shallow junctions in silicon. In theory, a large number of interstitials remain in the end of range (EOR) just below the laser-formed junction. There is also the possibility of quenching in point defects during the liquid phase epitaxial regrowth of the melt region. Since post processing anneals are inevitable, it is necessary to understand both the behavior of these interstitials and the nature of point defects in the recrystallized-melt region since they can directly affect deactivation and enhanced diffusion. In this study, an amorphizing 15 keV 1 x 1015/cm2 Si+ implant was done followed by a 1 keV 1 x 1014/cm2 B+ implant. The surface was then laser melted at energy densities between 0.74 and 0.9 J/cm2 using a 308 nm excimer-laser. It was found that laser energy densities above 0.81 J/cm2 melted past the amorphous-crystalline interface. Post-LTP furnace anneals were performed at 750°C for 2 and 4 hours. Transmission electron microscopy was used to analyze the defect formation after LTP and following furnace anneals. Secondary ion mass spectrometry measured the initial and final boron profiles. It was observed that increasing the laser energy density led to increased dislocation loop formation and increased diffusion after the furnace anneal. A maximum loop density and diffusion was observed at the end of the process window, suggesting a correlation between the crystallization defects and the interstitial evolution.

Investigations of Tail and Defect States in a-Si0.6Ge0.4:H Alloys by PDS and ESR - Implications for the Interaction of Weak and Dangling Bonds

1995 ◽  
Vol 377 ◽  
Author(s):  
Tilo P. Drüsedau ◽  
Andreas N. Panckow ◽  
Bernd Schröder
Keyword(s):  
Silicon Germanium ◽  
Defect Density ◽  
State Density ◽  
Model Parameters ◽  
Defect States ◽  
Conversion Model ◽  
Order Of Magnitude ◽  
Underlying Mechanisms ◽  
Amorphous Silicon Germanium ◽  
Excess Absorption

ABSTRACTInvestigations on the gap state density were performed on a variety of samples of hydrogenated amorphous silicon germanium alloys (Ge fraction around 40 at%) containing different amounts of hydrogen. From subgap absorption measurements the values of the “integrated excess absorption” and the “defect absorption” were determined. Using a calibration constant, which is well established for the determination of the defect density from the integrated excess absorption of a-Si:H and a-Ge:H, it was found that the defect density is underestimated by nearly one order of magnitude. The underlying mechanisms for this discrepancy are discussed. The calibration constants for the present alloys are determined to 8.3×1016 eV−1 cnr2 and 1.7×1016 cm−2 for the excess and defect absorption, respectively. The defect density of the films was found to depend on the Urbach energy according to the law derived from Stutzmann's dangling bond - weak bond conversion model for a-Si:H. However, the model parameters - the density of states at the onset of the exponential tails N*=27×1020 eV−1 cm−3 and the position of the demarcation energy Edb-E*=0.1 eV are considerably smaller than in a-Si:H.

Trapping Effect on the Kinetic Critical Radius in Nucleation and Growth Processes

2014 ◽  
Vol 790-791 ◽  
pp. 97-102
Author(s):  
Zoltán Erdélyi ◽  
Zoltán Balogh ◽  
Gabor L. Katona ◽  
Dezső L. Beke
Keyword(s):  
Critical Nucleus ◽  
Solid Phase ◽  
Kinetic Monte Carlo ◽  
Mean Field ◽  
Transformation Process ◽  
Nucleus Size ◽  
Critical Nucleus Size ◽  
Acta Mater ◽  
Order Of Magnitude ◽  
The Difference

The critical nucleus size—above which nuclei grow, below dissolve—during diffusion controlled nucleation in binary solid-solid phase transformation process is calculated using kinetic Monte Carlo (KMC). If atomic jumps are slower in an A-rich nucleus than in the embedding B-rich matrix, the nucleus traps the A atoms approaching its surface. It doesn’t have enough time to eject A atoms before new ones arrive, even if it would be favourable thermodynamically. In this case the critical nucleus size can be even by an order of magnitude smaller than expected from equilibrium thermodynamics or without trapping. These results were published in [Z. Erdélyi et al., Acta Mater. 58 (2010) 5639]. In a recent paper M. Leitner [M. Leitner, Acta Mater. 60 (2012) 6709] has questioned our results based on the arguments that his simulations led to different results, but he could not point out the reason for the difference. In this paper we summarize our original results and on the basis of recent KMC and kinetic mean field (KMF) simulations we show that Leitner’s conclusions are not valid and we confirm again our original results.

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