Molecular multilayers: structure and templating effects

2000 ◽  
Vol 620 ◽  
Author(s):  
Sandrine Heutz ◽  
Sallie M. Bayliss ◽  
Rudi Cloots ◽  
Ruth L. Middleton ◽  
Garry Rumbles ◽  
...  
Keyword(s):  
Molecular Beam ◽  
Double Layers ◽  
X Ray Diffraction ◽  
Multilayered Structures ◽  
X Ray ◽  
Metal Free ◽  
Molecular Beam Deposition ◽  
Polymorphic Forms ◽  
Templating Effect ◽  
Beam Deposition

ABSTRACTPowder X-Ray diffraction (XRD) has been used to study multilayered structures grown by, organic molecular beam deposition based on the molecular materials PTCDA and metal-free phthalocyanine (H2Pc). Double layers of different polymorphic forms (α, β1 and β2) of H2Pc indicate that the structure of the second layer is determined by the properties of the first layer. It is also shown that the first layer completely disrupts the crystallinity of the second layer in heterostructures containing PTCDA and H2Pc. The implication is that a strong templating effect occurs during the growth of multilayer molecular thin film structures.

Interfacial Superstructures Studied by Grazing Incidence X-Ray Diffraction

1989 ◽  
Vol 159 ◽  
Author(s):  
Koichi Akimoto ◽  
Jun'Ichiro Mizuki ◽  
Ichiro Hirosawa ◽  
Junji Matsui
Keyword(s):  
Synchrotron Radiation ◽  
Direct Observation ◽  
Molecular Beam ◽  
Solid Phase ◽  
Grazing Incidence ◽  
Deposition Method ◽  
X Ray Diffraction ◽  
X Ray ◽  
Molecular Beam Deposition ◽  
Beam Deposition

ABSTRACTSurface superstructures (reconstructed structures) have been observed by many authors. However, it is not easy to confirm that a superstructure does exist at an interface between two solid layers. The present paper reports a direct observation, by a grazing incidence x-ray diffraction technique with use of synchrotron radiation, of superstructures at the interface. Firstly, the boron-induced R30° reconstruction at the Si interface has been investigated. At the a Si/Si(111) interface, boron atoms at 1/3 ML are substituted for silicon atoms, thus forming a R30° lattice. Even at the interface between a solid phase epitaxial Si(111) layer and a Si(111) substrate, the boron-induced R30° reconstruction has been also observed. Secondly, SiO2/Si(100)-2×l interfacial superstructures have been investigated. Interfacial superstructures have been only observed in the samples of which SiO2 layers have been deposited with a molecular beam deposition method. Finally, the interfaces of MOCVD-grown AIN/GaAs(100) have been shown to have 1×4 and 1×6 superstructures.

Deposition and Annealing Studies of Diamond-Like Carbon Grown by Molecular Beam Deposition

1999 ◽  
Vol 593 ◽  
Author(s):  
Oliver Goetzberger ◽  
Nobuaki Kojima ◽  
Aurangzeb Khan ◽  
Masafumi Yamaguchi
Keyword(s):  
Electrical Conductivity ◽  
Photoelectron Spectroscopy ◽  
Molecular Beam ◽  
Carbon Films ◽  
Variable Range Hopping ◽  
Annealing Behavior ◽  
X Ray ◽  
Temperature Dependence Of Conductivity ◽  
Molecular Beam Deposition ◽  
Beam Deposition

ABSTRACTStudies on the electrical conductivity of molecular beam deposited carbon films after annealing of the carbon films have been carried out. Detailed temperature dependence of conductivity on the as-deposited and on annealed samples has been investigated. The results were interpreted in terms of a model which includes a variable range hopping and strongly scattering metallic components. A correlation between annealing behavior of the electrical conductivity and the results of x-ray photoelectron spectroscopy and Raman spectroscopy is presented.

In situ X-ray characterization of oligophenylene thin films prepared by organic molecular beam deposition

1998 ◽  
Vol 130-132 ◽  
pp. 651-657 ◽  
Author(s):  
Yuji Yoshida ◽  
Hiroshi Takiguchi ◽  
Takeshi Hanada ◽  
Nobutaka Tanigaki ◽  
Eun Mi Han ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Beam ◽  
X Ray ◽  
Molecular Beam Deposition ◽  
Beam Deposition

Synthesis of Dislocation Free Siy(SnxC1−x)1−y Alloys by Molecular Beam Deposition and Solid Phase Epitaxy

1993 ◽  
Vol 298 ◽  
Author(s):  
Gang He ◽  
Mark D. Savellano ◽  
Harry A. Atwater
Keyword(s):  
Molecular Beam ◽  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
X Ray Diffraction ◽  
Time Resolved ◽  
Pure Silicon ◽  
Ion Channeling ◽  
Transmission Electron ◽  
Molecular Beam Deposition ◽  
Beam Deposition

AbstractSynthesis of strain-compensated single-crystal Siy(SnxC1-x)1-y alloy films on silicon (100) substrates has been achieved with compositions of tin and carbon greatly exceeding their normal equilibrium solubility in silicon. Amorphous SiSnC alloys were deposited by molecular beam deposition from solid sources followed by thermal annealing. In situ monitoring of crystallization was done using time-resolved reflectivity. Good solid phase epitaxy was observed for Si0.98Sn0.01C0.01, at a rate about 20 times slower than that of pure silicon. Compositional and structural analysis was done using Rutherford backscattering, electron microprobe, ion channeling, x-ray diffraction, and transmission electron microscopy.

Organic Molecular Beam Deposition of Oligophenyls on Au(111): A Study by X-ray Absorption Spectroscopy

ChemPhysChem ◽  
2006 ◽  
Vol 7 (12) ◽  
pp. 2552-2558 ◽  
Author(s):  
Stefan Müllegger ◽  
Kathrin Hänel ◽  
Thomas Strunskus ◽  
Christof Wöll ◽  
Adolf Winkler
Keyword(s):  
Absorption Spectroscopy ◽  
Molecular Beam ◽  
X Ray ◽  
Molecular Beam Deposition ◽  
X Ray Absorption ◽  
Beam Deposition
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