Modeling Carrier Transport in Oxide-Passivated Nanocrystalline Silicon Leds

2000 ◽  
Vol 638 ◽  
Author(s):  
Karl D. Hirschman ◽  
Philippe M. Fauchet
Keyword(s):  
Density Of States ◽  
Carrier Transport ◽  
Light Emission ◽  
Transport Model ◽  
Glass Structure ◽  
Electrical Characterization ◽  
Nanocrystalline Silicon ◽  
Hole Injection ◽  
Device Operation

AbstractThis report presents an investigation on carrier transport in LED structures based on oxide passivated nanocrystalline silicon (OPNSi), formed by oxidation of porous silicon. This material, like its precursor, can luminesce quite efficiently while demonstrating several advantages in stability (i.e. chemical, thermal, electrical and electroluminescence). OPNSi can be best described as a porous glass structure with defects that facilitate transport, and remaining embedded nanocrystals of silicon that support light emission. Although this study does not provide a direct measurement of the density of states in OPNSi, the following transport study suggests a high density of states having a broad energy distribution that readily exchange charge with the silicon electrodes. Experimental data also suggests the existence of deeper trap centers that do not facilitate transport, yet influence transport behavior significantly. The device operation is explained by bipolar injection from an electron-injection cathode and a hole-injection anode into the semi-insulating OPNSi layer. The device is modeled as a “field effect diode”, where untraditional concepts are applied in the interpretation of experimental observations. Extensive electrical characterization of OPNSi LEDs has lead to the development of a comprehensive transport model that is self-consistent with all experimental observations.

Case Studies in Atomic Force Probe Analysis

2006 ◽  
Author(s):  
Randal Mulder ◽  
Sam Subramanian ◽  
Tony Chrastecky
Keyword(s):  
Failure Analysis ◽  
Case Studies ◽  
Light Emission ◽  
Electrical Characterization ◽  
Logic Circuits ◽  
Contrast Imaging ◽  
Atomic Force ◽  
Measuring Surface ◽  
Analysis Environment

Abstract The use of atomic force probe (AFP) analysis in the analysis of semiconductor devices is expanding from its initial purpose of solely characterizing CMOS transistors at the contact level with a parametric analyzer. Other uses found for the AFP include the full electrical characterization of failing SRAM bit cells, current contrast imaging of SOI transistors, measuring surface roughness, the probing of metallization layers to measure leakages, and use with other tools, such as light emission, to quickly localize and identify defects in logic circuits. This paper presents several case studies in regards to these activities and their results. These case studies demonstrate the versatility of the AFP. The needs and demands of the failure analysis environment have quickly expanded its use. These expanded capabilities make the AFP more valuable for the failure analysis community.

Electrical Characterization of the Graphene-SiC Heterojunction

2012 ◽  
Vol 717-720 ◽  
pp. 641-644
Author(s):  
Travis J. Anderson ◽  
Karl D. Hobart ◽  
Luke O. Nyakiti ◽  
Virginia D. Wheeler ◽  
Rachael L. Myers-Ward ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Charge Carrier ◽  
Graphene Sheet ◽  
Carrier Transport ◽  
Electrical Characterization ◽  
Epitaxial Graphene ◽  
Charge Carrier Transport ◽  
Semiconductor System ◽  
Significant Research

Graphene, a 2D material, has motivated significant research in the study of its in-plane charge carrier transport in order to understand and exploit its unique physical and electrical properties. The vertical graphene-semiconductor system, however, also presents opportunities for unique devices, yet there have been few attempts to understand the properties of carrier transport through the graphene sheet into an underlying substrate. In this work, we investigate the epitaxial graphene/4H-SiC system, studying both p and n-type SiC substrates with varying doping levels in order to better understand this vertical heterojunction.

Investigation of carrier transport mechanisms in the Cu–Zn–Se based hetero-structure grown by sputtering technique

2018 ◽  
Vol 96 (7) ◽  
pp. 816-825 ◽  
Author(s):  
H.H. Güllü ◽  
M. Terlemezoğlu ◽  
Ö. Bayraklı ◽  
D.E. Yıldız ◽  
M. Parlak
Keyword(s):  
Barrier Height ◽  
Carrier Transport ◽  
Thermionic Emission ◽  
Electrical Characterization ◽  
Band Gap Energy ◽  
Zero Bias ◽  
Hetero Structure ◽  
Current Voltage ◽  
P Type

In this paper, we present results of the electrical characterization of n-Si/p-Cu–Zn–Se hetero-structure. Sputtered film was found in Se-rich behavior with tetragonal polycrystalline nature along with (112) preferred orientation. The band gap energy for direct optical transitions was obtained as 2.65 eV. The results of the conductivity measurements indicated p-type behavior and carrier transport mechanism was modelled according to thermionic emission theory. Detailed electrical characterization of this structure was carried out with the help of temperature-dependent current–voltage measurements in the temperature range of 220–360 K, room temperature, and frequency-dependent capacitance–voltage and conductance-voltage measurements. The anomaly in current–voltage characteristics was related to barrier height inhomogeneity at the interface and modified by the assumption of Gaussian distribution of barrier height, in which mean barrier height and standard deviation at zero bias were found as 2.11 and 0.24 eV, respectively. Moreover, Richardson constant value was determined as 141.95 Acm−2K−2 by means of modified Richardson plot.

Nanocrystal Memory Device Utilizing GaN Quantum Dots by RF MBE

2010 ◽  
Vol 1250 ◽  
Author(s):  
Panagiotis Dimitrakis ◽  
Eleftherios Iliopoulos ◽  
Pascal Normand
Keyword(s):  
Electrical Characterization ◽  
Energy Band Diagram ◽  
Memory Device ◽  
Hole Injection ◽  
Mos Devices ◽  
Molecular Beam Deposition ◽  
Frequency Plasma ◽  
Nanocrystal Memory ◽  
Beam Deposition

AbstractThe growth of GaN-QDs by radio frequency plasma assisted molecular beam deposition (RF-MBD) on thin SiO2 films for non-volatile memories (NVM) applications is demonstrated. Thermal budget modification during the deposition allows tuning of the size and density of the QDs. Preliminary electrical characterization of GaN-QD MOS devices reveals efficient electron injection at very low voltages from the Si accumulation layer to the QDs. The observed limitation in hole injection relates adequately to the energy band diagram of the structure.

Electrical Characterization of 3C-SiC Lateral MOSFETs Fabricated on Heteroepitaxial Films Including High Density of Defects

2015 ◽  
Vol 821-823 ◽  
pp. 733-736 ◽  
Author(s):  
Yukimune Watanabe ◽  
Noriyasu Kawana ◽  
Tsuyoshi Horikawa ◽  
Kiichi Kamimura
Keyword(s):  
Gate Voltage ◽  
Light Emission ◽  
Electrical Characterization ◽  
Charge Trapping ◽  
Drain Current ◽  
High Density ◽  
Electrical Characteristics ◽  
Voltage Curve ◽  
Emission Light

We have fabricated lateral MOSFETs on heteroepitaxial 3C-SiC films included high density of defects. Electrical characteristics of 3C-SiC MOSFETs and their temperature dependence were measured to discuss effects of defects on the electrical characteristics. A field effect mobility of 156 cm2/Vs was obtained at room temperature. After applying a drain voltage of 10 V or higher, the drain current - gate voltage curve shifted toward the positive gate voltage. This shift was caused mainly by the charge trapping in the gate oxide. The light emission was observed on the surface of the active MOSFET. The spatial distribution of the emission light from MOSFETs indicated that the charge was generated at the source edge of the gate channel.

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