Charge-Transport in Partially-Ordered Regioregular Poly(3-Hexylthiophene) Studied as a Function of the Charge-carrier Density

2000 ◽  
Vol 660 ◽  
Author(s):  
D.B.A. Rep ◽  
B.-H. Huisman ◽  
E.J. Meijer ◽  
P. Prins ◽  
T.M. Klapwijk
Keyword(s):  
Charge Carrier ◽  
Charge Transport ◽  
Conjugated Polymer ◽  
Carrier Density ◽  
Structural Changes ◽  
Charge Carriers ◽  
Charge Carrier Density ◽  
Partially Ordered ◽  
Regioregular Poly

ABSTRACTWe demonstrate that charge-transport in partially-ordered thin films of poly(3- hexylthiophene) is strongly dependent on the charge-carrier density in the film, which we relate to the localized nature of the charge carriers. We base our conclusions on measurements in which the charge-carrier density is varied by electrostatic means (in a transistor geometry) and by in- situ thermal removal of oxygen dopants. For the doping levels investigated, we argue that the removal of oxygen does not induce structural changes in the conjugated polymer, and that it only shifts the Fermi-level of the film.

scholarly journals The effect of atmospheric doping on pressure-dependent Raman scattering in supported graphene

2018 ◽  
Vol 9 ◽  
pp. 704-710 ◽  
Author(s):  
Egor A Kolesov ◽  
Mikhail S Tivanov ◽  
Olga V Korolik ◽  
Olesya O Kapitanova ◽  
Xiao Fu ◽  
...  
Keyword(s):  
Charge Carrier ◽  
Raman Scattering ◽  
Carrier Density ◽  
Opposite Effect ◽  
Substrate Material ◽  
Charge Carriers ◽  
Charge Carrier Density ◽  
Electron Charge ◽  
Nanoelectronic Devices ◽  
Phonon Properties

Atmospheric doping of supported graphene was investigated by Raman scattering under different pressures. Various Raman spectra parameters were found to depend on the pressure and the substrate material. The results are interpreted in terms of atmospheric adsorption leading to a change in graphene charge carrier density and the effect of the substrate on the electronic and phonon properties of graphene. It was found that adsorption of molecules from the atmosphere onto graphene doped with nitrogen (electron doping) compensates for the electron charge. Furthermore, the atmosphere-induced doping drastically decreases the spatial heterogeneity of charge carriers in graphene doped with nitrogen, while the opposite effect was observed for undoped samples. The results of this study should be taken into account for the development of sensors and nanoelectronic devices based on graphene.

scholarly journals The Charge Carrier Density Influence and Thermal Effects on Charge Transport in Organic Semiconductors

2015 ◽  
Vol 9 (18) ◽  
pp. 216-218
Author(s):  
Sara S. de Brito ◽  
Wiliam F. da Cunha ◽  
Demétrio A. da Silva Filho ◽  
Pedro H. de Oliveira Neto
Keyword(s):  
Charge Carrier ◽  
Charge Transport ◽  
Organic Semiconductors ◽  
Thermal Effects ◽  
Carrier Density ◽  
Charge Carrier Density

Susceptibility and Evidences of Charge Carriers Interaction above Tc in Nd1.85Ce0.15CuO4+δ

1999 ◽  
Vol 13 (09n10) ◽  
pp. 1151-1156 ◽  
Author(s):  
A. Lascialfari ◽  
P. Ghigna ◽  
S. De Gennaro
Keyword(s):  
Magnetic Properties ◽  
Magnetic Susceptibility ◽  
Critical Temperature ◽  
Charge Carrier ◽  
Effective Magnetic Moment ◽  
Carrier Density ◽  
Charge Carriers ◽  
Oxide Superconductors ◽  
Charge Carrier Density ◽  
Copper Oxide Superconductors

The charge carrier density plays a crucial role in the transition between normal and superconducting state in the copper-oxide superconductors. In Nd 1.85 Ce 0.15 CuO 4+δ sample, for charge carrier density n = nc≃ 0.07 the superconductivity sets in. In order to investigate the magnetic properties around nc, a set of magnetic susceptibility measurements in the temperature range 3-260K for samples with different charge carriers concentrations were realized. Magnetic susceptibility curves of Nd 1.85 Ce 0.15 CuO 4+δ revealed novel behavior well above the critical temperature T c: at fixed T ≥45 K , the susceptibility χ, reported as a function of the charge carrier density n, shows a peak around n=0.06 and drops to significantly lower values for n greater than 0.07, the value at which the samples become superconducting. The effective magnetic moment μeff shows the same behavior. The comparison of the present experimental results with recent transport ones gives evidence of a possible interaction between charge carriers above T c. The possibility that this effect could be due to a bipolarons-like mechanism of charge carriers interaction is discussed.

Thermal Frequency Imaging: A New Application of Laser Voltage Imaging Applied on 40nm Technology

2011 ◽  
Author(s):  
Guillaume Celi ◽  
Sylvain Dudit ◽  
Thierry Parrassin ◽  
Philippe Perdu ◽  
Antoine Reverdy ◽  
...  
Keyword(s):  
Charge Carrier ◽  
Laser Beam ◽  
Integrated Circuit ◽  
Carrier Density ◽  
Deep Submicron ◽  
Charge Carrier Density ◽  
Voltage Imaging ◽  
A New Technique ◽  
Scan Chain

Abstract For Very Deep submicron Technologies, techniques based on the analysis of reflected laser beam properties are widely used. The Laser Voltage Imaging (LVI) technique, introduced in 2009, allows mapping frequencies through the backside of integrated circuit. In this paper, we propose a new technique based on the LVI technique to debug a scan chain related issue. We describe the method to use LVI, usually dedicated to frequency mapping of digital active parts, in a way that enables localization of resistive leakage. Origin of this signal is investigated on a 40nm case study. This signal can be properly understood when two different effects, charge carrier density variations (LVI) and thermo reflectance effect (Thermal Frequency Imaging, TFI), are taken into account.

scholarly journals Zn2+ Ion Surface Enrichment in Doped Iron Oxide Nanoparticles Leads to Charge Carrier Density Enhancement

ACS Omega ◽  
2018 ◽  
Vol 3 (11) ◽  
pp. 16328-16337 ◽  
Author(s):  
Stanley Bram ◽  
Matthew N. Gordon ◽  
Michael A. Carbonell ◽  
Maren Pink ◽  
Barry D. Stein ◽  
...  
Keyword(s):  
Iron Oxide ◽  
Charge Carrier ◽  
Iron Oxide Nanoparticles ◽  
Carrier Density ◽  
Oxide Nanoparticles ◽  
Charge Carrier Density ◽  
Surface Enrichment ◽  
Density Enhancement

Tuning of charge carrier density by deposition pressure in Sb-doped Bi2Se3 thin films

2020 ◽  
Vol 693 ◽  
pp. 137689
Author(s):  
S. Abhirami ◽  
Shilpam Sharma ◽  
E.P. Amaladass ◽  
R. Rajitha ◽  
P. Magudapathy ◽  
...  
Keyword(s):  
Thin Films ◽  
Charge Carrier ◽  
Carrier Density ◽  
Charge Carrier Density ◽  
Deposition Pressure

scholarly journals Moderate strain induced indirect bandgap and conduction electrons in MoS2 single layers

2019 ◽  
Vol 3 (1) ◽  
Author(s):  
János Pető ◽  
Gergely Dobrik ◽  
Gergő Kukucska ◽  
Péter Vancsó ◽  
Antal A. Koós ◽  
...  
Keyword(s):  
Charge Carrier ◽  
Fermi Level ◽  
Conduction Band ◽  
Carrier Density ◽  
Tensile Strain ◽  
Charge Carrier Density ◽  
Conduction Electrons ◽  
Metallic Character ◽  
Optical Bandgaps ◽  
Biaxial Tensile Strain

Abstract MoS2 single layers are valued for their sizeable direct bandgap at the heart of the envisaged electronic and optoelectronic applications. Here we experimentally demonstrate that moderate strain values (~2%) can already trigger an indirect bandgap transition and induce a finite charge carrier density in 2D MoS2 layers. A conclusive proof of the direct-to-indirect bandgap transition is provided by directly comparing the electronic and optical bandgaps of strained MoS2 single layers obtained from tunneling spectroscopy and photoluminescence measurements of MoS2 nanobubbles. Upon 2% biaxial tensile strain, the electronic gap becomes significantly smaller (1.45 ± 0.15 eV) than the optical direct gap (1.73 ± 0.1 eV), clearly evidencing a strain-induced direct to indirect bandgap transition. Moreover, the Fermi level can shift inside the conduction band already in moderately strained (~2%) MoS2 single layers conferring them a metallic character.

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