T-Site Trapped Molecular Hydrogen in Hot Wire a-Si:H

ABSTRACTProton NMR and proton-29Si double resonance NMR have been performed on hot wire a-Si:H films deposited from SiH4. Results are compared with those from conventional plasma enhanced chemical vapor deposition a-Si:H. Proton nutational angle studies and proton-29Si spin-echo double resonance (SEDOR) signals at 80 and 294 K indicate that a significant proton resonance population arises from T-site-trapped molecular H2. The hot wire films also display a ≥80 kHz FWHM uperbroad proton line and a sharp feature diamagnetically shifted by 25 ppm.

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T-Site-Trapped Molecular Hydrogen in a-Si:H

MRS Proceedings ◽

10.1557/proc-609-a26.2 ◽

2000 ◽

Vol 609 ◽

Cited By ~ 2

Author(s):

R. E. Norberg ◽

D. J. Leopold ◽

P. A. Fedders ◽

R. Borzi ◽

P. H. Chan ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Molecular Hydrogen ◽

Double Resonance ◽

Chemical Vapor ◽

Molecular Component ◽

High Quality

ABSTRACTProton-29Si double resonance NMR measurements on high quality plasma-enhanced chemical vapor deposition a-Si:H deposited from SiH4 show that more than one third of the contained hydrogen is present as H2 molecules residing in the amorphous equivalent of T sites. The NMR signal from these trapped H2 appears in the narrow 4 kHz proton line, which arises from the less clustered hydrogen population. Very little of the molecular component is in the broad ~24 kHz line, which arises mostly from clustered hydrogen tightly bonded to silicon.

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High Band Gap Nanocrystalline Tungsten Carbide (nc-WC) Thin Films Grown by Hot Wire Chemical Vapor Deposition (HW-CVD) Method

Journal of Nano- and Electronic Physics ◽

10.21272/jnep.10(3).03001 ◽

2018 ◽

Vol 10 (3) ◽

pp. 03001-1-03001-6 ◽

Cited By ~ 2

Author(s):

Bharat Gabhale ◽

◽

Ashok Jadhawar ◽

Ajinkya Bhorde ◽

Shruthi Nair ◽

...

Keyword(s):

Thin Films ◽

Chemical Vapor Deposition ◽

Tungsten Carbide ◽

Band Gap ◽

Vapor Deposition ◽

Chemical Vapor ◽

Hot Wire ◽

Cvd Method ◽

High Band

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Synthesis of Boron-Doped Silicon Film Using Hot Wire Chemical Vapor Deposition Technique

Crystals ◽

10.3390/cryst10040237 ◽

2020 ◽

Vol 10 (4) ◽

pp. 237

Author(s):

M. Abul Hossion ◽

B. M. Arora

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Polycrystalline Silicon ◽

Silicon Film ◽

Chemical Vapor ◽

Hot Wire ◽

Deposition Technique ◽

Boron Doped ◽

Vapor Deposition Technique ◽

Polycrystalline Silicon Film

Boron-doped polycrystalline silicon film was synthesized using hot wire chemical vapor deposition technique for possible application in photonics devices. To investigate the effect of substrate, we considered Si/SiO2, glass/ITO/TiO2, Al2O3, and nickel tungsten alloy strip for the growth of polycrystalline silicon films. Scanning electron microscopy, optical reflectance, optical transmittance, X-ray diffraction, and I-V measurements were used to characterize the silicon films. The resistivity of the film was 1.3 × 10−2 Ω-cm for the polycrystalline silicon film, which was suitable for using as a window layer in a solar cell. These films have potential uses in making photodiode and photosensing devices.

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