Auto Feeding Epitaxial Growth of Oxide Thin Film without Oxidant

2001 ◽  
Vol 666 ◽  
Author(s):  
Kazuo Shimoyama ◽  
Kousuke Kubo ◽  
Tatsuro Maeda ◽  
Kikuo Yamabe
Keyword(s):  
Molecular Beam ◽  
Oxygen Supply ◽  
High Energy ◽  
Layer Growth ◽  
Oxide Thin Film ◽  
Layer By Layer ◽  
High Energy Electron ◽  
Low Oxygen ◽  
High Quality ◽  
Deposited Films

ABSTRACTHigh-quality thin films of BaTiO3 and SrTiO3 on SrTiO3 substrate were obtained by shutting off the oxygen supply during growth. Epitaxial growths were carried out with molecular-beam epitaxy (MBE) under extremely low oxygen partial pressure (pO2 < 1×10−8 Pa). Although only Ba(Sr) and Ti metals were supplied without introducing oxidant during the growth, clear reflection high-energy electron diffraction (RHEED) intensity oscillations from layer-by-layer growth were observed. The deposited films were found to have approximately stoichiometric compositions of BaTiO3 and SrTiO3. Oxygen was automatically fed from the substrate during the growths. It was found that the BaTiO3/SrTiO3 interface was abrupt without intermixing, despite a considerable amount of oxygen seems to have moved from the substrate to the film through the interface.

Theoretical analysis of reflection high-energy electron diffraction (RHEED) and reflection high-energy positron diffraction (RHEPD) intensity oscillations expected for the perfect layer-by-layer growth

2015 ◽  
Vol 71 (5) ◽  
pp. 513-518 ◽  
Author(s):  
Zbigniew Mitura
Keyword(s):  
Theoretical Models ◽  
High Energy ◽  
Layer Growth ◽  
Simplified Model ◽  
Layer By Layer ◽  
High Energy Electron ◽  
Realistic Potential ◽  
Simplified Approach ◽  
Electrons And Positrons ◽  
Analytical Formulas

Predictions from two theoretical models, allowing one to determine the phase of intensity oscillations, are compared for reflected beams of electrons and positrons. Namely, results of the precise dynamical calculations are compared with results obtained using a simplified approach. Within the simplified model, changes in the specularly reflected beam intensity, expected to occur during the deposition of new atoms, are described with the help of interfering waves and the effect of refraction, and respective approximate analytical formulas are employed to determine the phase of the oscillations. It is found that the simplified model is very useful for understanding the physics ruling the appearance of intensity oscillations. However, it seems that the model with the realistic potential is more suitable for carrying out interpretations of experimental data.

Bismuth-Induced Layer-by-Layer Growth in the Homoepitaxial Growth of Fe(100)

2002 ◽  
Vol 749 ◽  
Author(s):  
Masao Kamiko ◽  
Hiroaki Chihaya ◽  
Hiroyuki Mizuno ◽  
Junhua Xu ◽  
Isao Kojima ◽  
...  
Keyword(s):  
Electron Diffraction ◽  
Surface Segregation ◽  
High Energy ◽  
Layer Growth ◽  
Growth Behavior ◽  
Layer By Layer ◽  
High Energy Electron ◽  
Optimum Amount ◽  
Homoepitaxial Growth ◽  
Strong Surface

ABSTRACTWe have investigated the effect of Bi on the homoepitaxial growth of Fe(100) by means of reflection high-energy electron diffraction (RHEED). It was clearly found that Bi induces layer-by-layer growth of Fe on Fe(100)-c(2×2)O reconstruction surface. The result of the dependence of the growth behavior as a function of Bi layer thickness suggests that there is optimum amount of Bi surfactant layer that induces the smoother layer-by-layer growth. A strong surface segregation of Bi was found at the top of surface and acts as a surfactant by promoting the interlayer transport.

Reflection High Energy Electron Diffraction Studies of the Growth of DyBa2Cu3O7−x Films and Structures Grown on SrTiO3 Substrates

1992 ◽  
Vol 275 ◽  
Author(s):  
V. S. Achutharaman ◽  
N. Chandrasekhar ◽  
A. M. Goldman
Keyword(s):  
Electron Diffraction ◽  
Specular Reflection ◽  
Growth Conditions ◽  
High Energy ◽  
Layer Growth ◽  
Energy Electron ◽  
Layer By Layer ◽  
High Energy Electron ◽  
Epitaxial Relationship ◽  
Superlattice Structures

ABSTRACTIntensity oscillations of the specular reflection high energy electron diffraction (RHEED) beam contain useful information on the mode of growth and the evolving structure of thin films. We present RHEED studies of the growth of DyBa2Cu3O7−x films and DyBa2Cu3O7−x/DY2O3/DyBa2Cu3O7−x structures on SrTiO3; substrates deposited by ozone-assisted molecular beam epitaxy. The effect of substrate temperature, ozone flux and surface step densities on the epitaxial relationship and evolving microstructure will be discussed. The strong damping of the oscillations and identical time periods under different nuoleation and growth conditions suggest that the intensity oscillations are a consequence of to diffuse scattering from step edges rather than a layer-by-layer growth mode. It was also found that Dy2O3 can be used to fabricatee tri-layer type structures but not superlattice structures.

EFFECT OF Bi SURFACTANT IN THE HETEROEPITAXIAL GROWTH OF Co ON Cu SURFACES

2006 ◽  
Vol 13 (02n03) ◽  
pp. 201-207 ◽  
Author(s):  
MASAO KAMIKO ◽  
HIROAKI CHIHAYA ◽  
WATARU SUGIMOTO ◽  
RYOICHI YAMAMOTO ◽  
SANGMUN OH ◽  
...  
Keyword(s):  
Electron Spectroscopy ◽  
Surface Segregation ◽  
High Energy ◽  
Layer Growth ◽  
Layer By Layer ◽  
High Energy Electron ◽  
Heteroepitaxial Growth ◽  
Segregation Effect ◽  
Suitable Amount ◽  
Layered Growth

We have investigated the effect of Bi on the heteroepitaxial growth of Co on Cu by reflection high-energy electron diffraction (RHEED) measurements. It was found that Bi enhanced the layer-by-layer growth of Co on the Cu (111) surfaces at 100°C. The dependence of the growth on Bi layer thickness suggested that there existed a suitable amount of Bi surfactant layer that enhanced smoother layered growth. On the contrary, for the case of Co growth on Cu (100), Bi depressed the layer-by-layer growth of Co on Cu (100). The surface segregation effect of Bi was also studied by Auger electron spectroscopy (AES).

Combinatorial Molecular Layer Epitaxy of Hf Based Phosphor Oxides

2001 ◽  
Vol 700 ◽  
Author(s):  
N. Arai ◽  
T. W. Kim ◽  
H. Kubota ◽  
Y. Matsumoto ◽  
H. Koinuma
Keyword(s):  
Molecular Layer ◽  
High Energy ◽  
Layer Growth ◽  
Laser Deposition ◽  
Layer By Layer ◽  
High Energy Electron ◽  
X Ray ◽  
Substrate Interaction ◽  
Film Substrate

AbstractA series of MHfO3: Tm (M =Ca, Sr and Ba) composition spread films and superlattices (SLs) were quickly fabricated on SrTiO3 (001) substrate in the molecular layer-by-layer growth using combinatorial pulsed laser deposition (PLD) under in-situ reflection high-energy electron diffraction (RHEED) monitoring. Crystal structures and luminescence properties of composition-spread and SLs were evaluated by the concurrent X-ray diffractometer and cathode luminescence (CL), respectively. CL properties of the films were found strongly dependent on their composition and stacking sequence. Possible effect of the stress due to the film-substrate interaction on the CL property is discussed.

Dynamical calculations for RHEED from MBE growing surfaces. I. Growth on a low-index surface

1991 ◽  
Vol 432 (1885) ◽  
pp. 195-213 ◽  
Keyword(s):  
Electron Diffraction ◽  
Molecular Beam ◽  
Diffraction Theory ◽  
Growth Conditions ◽  
High Energy ◽  
Layer Growth ◽  
High Energy Electron ◽  
Mbe Growth ◽  
Diffusive Growth ◽  
Almost All

Dynamical diffraction calculations have been made for reflection high-energy electron diffraction (RHEED) from molecular beam epitaxy (MBE) growing surfaces. Effects due to both the diffraction and growth conditions on the RHEED intensity oscillations during MBE growth have been investigated in detail for perfect layer growth, non-diffusive, diffusive growth, and distributed growth on a low-index surface. The results are compared with the kinematic diffraction theory, and are shown to be able to reproduce almost all features of measured RHEED intensity oscillations from low-index surfaces.

Hopping Barriers at Step Edges

1993 ◽  
Vol 312 ◽  
Author(s):  
Pavel Šmilauer ◽  
Mark R. Wilby ◽  
Dimitri D. Vvedensky
Keyword(s):  
High Energy ◽  
Layer Growth ◽  
Low Energy ◽  
Step Edge ◽  
Solid Model ◽  
Layer By Layer ◽  
Ion Sputtering ◽  
High Energy Electron ◽  
Diffraction Intensity ◽  
Good Agreement

AbstractThe recent discovery of reentrant layer-by-layer growth in metal homoepitaxy has stimulated considerable interest in the role played by barriers to hopping down descending steps. However, the existence of step-edge barriers for semiconductors is far from being clearly established. We have investigated the effects of step-edge barriers for epitaxial growth and the “inverse” process of low-energy ion sputtering on metal surfaces using Monte Carlo simulations of a solid-on-solid model. Our results are in good agreement with available experimental data and provide new insights into the microscopic origins of the evolution of surface morphology during these processes. Our simulations also suggest that such step-edge barriers can explain the observed temperature and time dependence of the reflection high-energy electron diffraction intensity during post-growth recovery on GaAs(001), which sheds new light on this controversial subject.

Initial Stage of Heteroepitaxial Growth of SiC on Si by Gas Source MBE Using Hydrocarbon Radicals

1993 ◽  
Vol 318 ◽  
Author(s):  
Takashi Fuyuki ◽  
Yoichiro Tarui ◽  
Tomoaki Hatayama ◽  
Hiroyuki Matsunami
Keyword(s):  
Molecular Beam ◽  
High Energy ◽  
Layer Growth ◽  
Layer By Layer ◽  
Heteroepitaxial Growth ◽  
Homoepitaxial Growth ◽  
Gas Source ◽  
Initial Stage ◽  
Hydrocarbon Radicals ◽  
Gas Source Mbe

ABSTRACTHeteroepitaxial growth of 3C-SiC on Si in gas source molecular beam epitaxy ( GSMBE ) was carried out by a combination of carbonization of a Si surface and subsequent crystal growth on it using hydrocarbon radicals and Si2H6. The carbonization process and the initial stage of the subsequent growth during the intermittent supply of Si2H6 have been studied by a reflection high-energy electron diffraction (RHEED) observation. A Si surface was chemically converted to 3C-SiC at 750°C, and homoepitaxial growth on the carbonized layer could be obtained at 1000°C. Si atoms generated by thermal decomposition on a surface would react with hydrocarbon radicals, forming SiC through a layer by layer growth mode.

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