Effect of structural in-depth heterogeneities on electrical properties of Pb(Zr0.52Ti0.48) O3 thin films as revealed by nano-beam X-ray diffraction

Zn-rich and P-rich amorphous Zn3P2 thin films were prepared by co-evaporation of the excess element during the normal Zn3P2 deposition. X-ray diffraction techniques were used to investigate the structural properties and the crystallization process. Agglomeration of the excess element within the as-made amorphous Zn3P2 thin film accounted for the structural properties observed after annealing the sample. Electrical measurements showed that excess Zn reduces the conductivity activation energy and increases the conductivity, while excess P up to 15 at.% does not alter the electrical properties significantly.

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Effect Of Fluorine Doping On The Structural, Optical And Electrical Properties Of Spin Coated Tin Oxide Thin Films For Solar Cells Application

10.36293/sfj.2019.0002 ◽

2019 ◽

Keyword(s):

Thin Films ◽

Solar Cells ◽

Electrical Properties ◽

Tin Oxide ◽

Transparent Conducting Oxide ◽

Optical And Electrical Properties ◽

Fluorine Doping ◽

X Ray Diffraction ◽

X Ray ◽

Transparent Conducting

Transparent conducting oxide (TCO) thin films are materials of significance for their applications in optoelectronics and sun powered cells. Fluorine-doped tin oxide (FTO) is an elective material in the advancement of TCO films. This paper reports the impact of fluorine doping on structural, optical and electrical properties of tin oxide thin films for solar cells application. The sol-gel was prepared from anhydrous stannous chloride, SnCl2 as an originator, 2-methoxyethanol as a solvent, di-ethanolamine as a preservative and ammonium fluoride as the dopant source. FTO precursor solution was formulated to obtain 0, 5, 10, 15 and 20 % doping concentration and deposited on glass substrates by means of spin coater at the rate of 2000 rpm for 40 seconds. After pre-heated at 200 oC, the samples were annealed at 600 oC for 2 h. The structural, optical and electrical characteristics of prepared films were characterized using X-ray diffraction (XRD) analysis, UV-visible spectroscopy and electrical measurement. X-ray diffraction (XRD) investigation of the films demonstrated that the films were polycrystalline in nature with tetragonal-cassiterite structure with most extraordinary pinnacle having a grain size of 17.01 nm. Doping with fluorine decreases the crystallite size. There was increment in the absorbance of the film with increasing wavelength and the transmittance was basically reduced with increasing fluorine doping in the visible region. The energy band gaps were in the range of 4.106-4.121 eV. The sheet resistance were observed to decrease as the doping percentage of fluorine increased with exception at higher doping of 15 and 20 %. In view of these outcomes, FTO thin films prepared could have useful application in transparent conducting oxide electrode in solar cell.

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Electrical Properties of Multilayer Synthesized CuInSi Thin Film

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.383-390.822 ◽

2011 ◽

Vol 383-390 ◽

pp. 822-825

Author(s):

Ping Luan ◽

Jian Sheng Xie ◽

Jin Hua Li

Keyword(s):

Thin Film ◽

Crystal Structure ◽

Thin Films ◽

Electrical Properties ◽

Annealing Temperature ◽

Time Effect ◽

X Ray Diffraction ◽

Testing Instrument ◽

X Ray ◽

Conductivity Type

Using magnetron sputtering technology, the CuInSi thin films were prepared by multilayer synthesized method. The structure of CuInSi films were detected by X-ray diffraction(XRD), the main crystal phase peak is at 2θ=42.458°; The resistivity of films were measured by SDY-4 four-probe meter; The conductive type of the films were tested by DLY-2 conductivity type testing instrument. The results show that the annealing temperature and time effect on the crystal resistivity and crystal structure greatly.

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Structural and Electrical Properties of Colossal Magnetoresistive LSMO Thin Films Prepared by KrF Laser Ablation Method

MRS Proceedings ◽

10.1557/proc-666-f3.3 ◽

2001 ◽

Vol 666 ◽

Cited By ~ 2

Author(s):

Fumiaki Mitsugi ◽

Tomoaki Ikegami ◽

Kenji Ebihara ◽

Jagdish Narayan ◽

Alexander M. Grishin

Keyword(s):

Thin Films ◽

Laser Ablation ◽

Electrical Properties ◽

Lattice Mismatch ◽

X Ray Diffraction ◽

Axis Orientation ◽

X Ray ◽

Colossal Magnetoresistive ◽

Laser Ablation Method ◽

Structural And Electrical Properties

ABSTRACTWe prepared colossal magnetoresistive La0.8Sr0.2MnO3 thin films on the MgO, SrTiO3 and LaAlO3 single crystal substrates using KrF excimer pulsed laser ablation technique. The structural and electrical properties of the La0.8Sr0.2MnO3 thin films which were strained by the lattice mismatch are reported. The in-plane lattice mismatch between the La0.8Sr0.2MnO3 and MgO, SrTiO3 and LaAlO3 substrates are -7.8 %, -0.5 % and +2.3 %, respectively. The X-ray diffraction spectra of the films exhibited c-axis orientation. In the case of the La0.8Sr0.2MnO3 / LaAlO3 thin films with thickness over 100 nm, the divided (00l) peaks were observed. The surface morphology and transport property of the strongly stressed La0.8Sr0.2MnO3 / LaAlO3 were different from those of La0.8Sr0.2MnO3 / MgO and La0.8Sr0.2MnO3 / SrTiO3thin films.

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STUDIES ON THE TiO2 THIN FILMS DOPED WITH Fe3+

International Journal of Modern Physics B ◽

10.1142/s0217979205029298 ◽

2005 ◽

Vol 19 (01n03) ◽

pp. 671-673

Author(s):

PENG XIAO ◽

WANLU WANG

Keyword(s):

Thin Films ◽

Raman Spectroscopy ◽

Electrical Properties ◽

Sol Gel ◽

Experimental Results ◽

X Ray Diffraction ◽

Tio2 Thin Films ◽

Gel Method ◽

X Ray ◽

Nanometer Particles

The Fe 3+- TiO 2 thin films obtained through sol-gel method were characterized by x-ray diffraction, AFM and Raman spectroscopy. It was found that TiO 2 films consisted of nanometer particles. The experimental results shows that the nanometer TiO 2 thin films doped with Fe 3+ were greatly improved in the activity aspect. This may be ascribed to change their structure and electrical properties after doping with Fe 3+. The results were discussed theoretically in detail.

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Texturing and Dielectric Properties of Laser Deposited BaTiO3 Thin Films Grown on Heated Substrates

MRS Proceedings ◽

10.1557/proc-243-513 ◽

1991 ◽

Vol 243 ◽

Cited By ~ 1

Author(s):

M.D. Vaudin ◽

L.P. Cook ◽

W. Wong-Ng ◽

P.K. Schenck ◽

P.S. Brody ◽

...

Keyword(s):

Electron Microscopy ◽

Thin Films ◽

Dielectric Properties ◽

Electrical Properties ◽

Pulsed Laser ◽

Laser Deposition ◽

Silicon Substrates ◽

X Ray Diffraction ◽

Electrical Measurements ◽

X Ray

AbstractThin films of BaTiO3 were deposited on platinum-coated silicon substrates using pulsed laser deposition and characterized using electron microscopy, powder x-ray diffraction and electrical measurements. The microstructure consisted of columnar BaTiO3 grains oriented normal to the substrate. Two preferred orientations were observed, with either the (001) or (111) planes of BaTiO3 being parallel to the substrate. The electrical properties of two films were measured and it was found that the (111) film was ferroelectric and the (001) film was not. Possible reasons for this are discussed.

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Optical and Electrical Properties of Ag-Doped In2S3Thin Films Prepared by Thermal Evaporation

Advances in Materials Science and Engineering ◽

10.1155/2014/370861 ◽

2014 ◽

Vol 2014 ◽

pp. 1-4 ◽

Cited By ~ 1

Author(s):

Peijie Lin ◽

Sile Lin ◽

Shuying Cheng ◽

Jing Ma ◽

Yunfeng Lai ◽

...

Keyword(s):

Thin Films ◽

Electrical Properties ◽

Thermal Evaporation ◽

Xrd Analysis ◽

Optical And Electrical Properties ◽

X Ray Diffraction ◽

Thermal Evaporation Method ◽

X Ray ◽

Glass Substrates ◽

Hall Measurement System

Ag-doped In2S3(In2S3:Ag) thin films have been deposited onto glass substrates by a thermal evaporation method. Ag concentration is varied from 0 at.% to 4.78 at.%. The structural, optical, and electrical properties are characterized using X-ray diffraction (XRD), spectrophotometer, and Hall measurement system, respectively. The XRD analysis confirms the existence of In2S3and AgIn5S8phases. With the increase of the Ag concentration, the band gap of the films is decreased gradually from 2.82 eV to 2.69 eV and the resistivity drastically is decreased from ~103to5.478×10-2 Ω·cm.

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INDIUM SELENIDE THIN FILMS BY LASER IRRADIATION OF In/Se LAYERED STRUCTURE

Surface Review and Letters ◽

10.1142/s0218625x13500583 ◽

2013 ◽

Vol 20 (06) ◽

pp. 1350058 ◽

Cited By ~ 1

Author(s):

R. E. ORNELAS-ACOSTA ◽

S. SHAJI ◽

D. AVELLANEDA ◽

G. A. CASTILLO ◽

T. K. DAS ROY ◽

...

Keyword(s):

Thin Films ◽

Electrical Properties ◽

Laser Irradiation ◽

Layered Structure ◽

Optical And Electrical Properties ◽

X Ray Diffraction ◽

X Ray ◽

Glass Substrates ◽

Structure Morphology ◽

532 Nm

In this work, we report the formation of In 6 Se 7 thin films by laser irradiation of In / Se layered structure. Indium layer was deposited on glass substrates by thermal evaporation on which selenium thin film was grown by chemical bath deposition from an aqueous solution containing 10 ml of sodium selenosulphate (0.1 M), 1.0 ml acetic acid (25%) and 70 ml distilled water during 5 min. The In / Se coated glass substrates were irradiated using a 532 nm continuous laser for 3–5 min. Structure, morphology, optical and electrical properties of the irradiated thin films were analyzed using various techniques. X-ray diffraction analysis showed that the irradiated thin films were In 6 Se 7 of monoclinic structure. X-ray photoelectron spectroscopic study on the laser irradiated samples provided uniform relative composition of In and Se in the thin films formed after laser irradiation. The morphology, optical and electrical properties of the irradiated samples were investigated. The optical band gap of the In 6 Se 7 thin films was 2.2 eV and also, the thin films were photoconductive.

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Effect of Cu Dopant on the Electrical Property of ZnO Thin Films Deposited by Pulsed Laser Deposition

Solid State Phenomena ◽

10.4028/www.scientific.net/ssp.124-126.339 ◽

2007 ◽

Vol 124-126 ◽

pp. 339-342

Author(s):

Gun Hee Kim ◽

Hong Seong Kang ◽

Dong Lim Kim ◽

Hyun Woo Chang ◽

Byung Du Ahn ◽

...

Keyword(s):

Thin Films ◽

Electrical Properties ◽

Pulsed Laser Deposition ◽

Pulsed Laser ◽

Laser Deposition ◽

Zno Thin Films ◽

X Ray Diffraction ◽

X Ray ◽

Doped Zno ◽

Deposition Conditions

Cu-doped ZnO (denoted by ZnO:Cu) films have been prepared by pulsed laser deposition using 3 wt. CuO doped ZnO ceramic target. The carrier concentrations (1011~1018 cm-3) and, electrical resistivity (10-1~105 cm) of deposited Cu-doped ZnO thin films were varied depending on deposition conditions. Variations of electrical properties of Cu-doped ZnO indicate that copper dopants may play an important role in determining their electrical properties, compared with undoped films. To investigate effects of copper dopants on the properties of ZnO thin films, X-Ray diffraction (XRD), photoluminescence (PL), and Hall measurements have been performed and corresponded.

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Microstructure and properties of PbZr0.6Ti0.4O3 and PbZrO3 thin films deposited on template layers

Journal of Materials Research ◽

10.1557/jmr.2000.0283 ◽

2000 ◽

Vol 15 (9) ◽

pp. 1962-1971 ◽

Cited By ~ 9

Author(s):

R. E. Koritala ◽

M. T. Lanagan ◽

N. Chen ◽

G. R. Bai ◽

Y. Huang ◽

...

Keyword(s):

Thin Films ◽

Electrical Properties ◽

Chemical Vapor ◽

Dielectric Constants ◽

Breakdown Field ◽

X Ray Diffraction ◽

Electrical Measurements ◽

X Ray ◽

Si Substrates ◽

Antiferroelectric Phase

Polycrystalline Pb(ZrxTi1−x)O3 thin films with x = 0.6 and 1.0 were deposited at low temperatures (450–525 °C) on (111)Pt/Ti/SiO2/Si substrates by metalorganic chemical vapor deposition. The films were characterized by x-ray diffraction, electron microscopy, and electrical measurements. The texture of the films could be improved by using one of two template layers: PbTiO3 or TiO2. Electrical properties, including dielectric constants, loss tangents, polarization, coercive field, and breakdown field, were also examined. PbZrO3 films on Pt/Ti/SiO2/Si with a pseudocubic (110) orientation exhibited an electric-field-induced transformation from the antiferroelectric phase to the ferroelectric phase. The effect of varying processing conditions on the microstructure and electrical properties of the films is discussed.

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