Textured Superconducting Thin Films of Bismuth Cuprate by Laser Ablation Method

1989 ◽  
Vol 169 ◽  
Author(s):  
Ashok Kumar ◽  
L. Ganapathi ◽  
J. Narayan
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Bulk Material ◽  
Lattice Parameter ◽  
Superconducting Thin Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Laser Ablation Method ◽  
Zero Resistance ◽  
Diffraction Patterns

AbstractWe have prepared highly textured superconducting thin films from Bi1.5pb0.5Ca3Sr2Cu4Ox (2324) on (100) YS-ZrO2 (Yttria stabilized zirconia) and Bi1.5Pb0.5Ca2Sr2Cu3°x (2223) on LaAlC-3 (100) and MgO (100) substrates at 650°C by pulsed laser ablation method.These films showed 2212 type of phase of the (BiPb)2(Ca,Sr)n+1CunO2n+4+5 family with onset transition temperature ( Tc ) ~ 110 K, confirming our earlier observations of 110 K superconductivity in a n = 2 bulk material. Thin films deposited from 2324 bulk target on YS-Z1O2 showed zero resistance temperature (Tco ) of 68 K but post annealing for one hour at 400°C in oxygen improved Tco from 68 K to 82 K. Thin films from 2223 target on LaAlO3 ( 100 ) and MgO ( 100 ) exhibited a Tco of 65 K and 74 K respectively while onset remained the same at 110 K. Further annealing at 400°C for one hour in oxygen did not show any improvement in Tco. X-ray diffraction (XRD), scanning electron microscopy (SEM) and Rutherford backscattering (RBS) channeling studies were performed on these films for correlation between crystal structure, microstructure and superconducting properties. X-ray diffraction patterns indicated 2212 type phase with a= 5.39 Å and c=30.76 Å; preferential orientation of c-axis perpendicular to the substrate was observed. The lattice parameter and x-ray diffraction patterns were found to be invariant with annealing treatments.

HIGH-QUALITY Tl2Ba2Ca2Cu3O10 THIN FILMS FABRICATED VIA LASER ABLATION

1993 ◽  
Vol 07 (01) ◽  
pp. 19-23 ◽  
Author(s):  
W. A. LUO ◽  
Y. Q. TANG ◽  
Y. Z. CHEN ◽  
I. N. CHAN ◽  
K. Y. CHEN ◽  
...  
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Critical Current Density ◽  
Current Density ◽  
Superconducting Thin Films ◽  
X Ray Diffraction ◽  
High Quality ◽  
Step Process ◽  
X Ray ◽  
Zero Resistance

In this letter, we describe results obtained via laser ablation to fabricate Tl 2 Ba 2 Ca 2 Cu 3- O 10 superconducting thin films using a two-step process. We found that the zero-resistance temperatures are up to 121 K, while the onset temperatures are up to 125 K. The T c and J c are mainly determined by a non-contact new technique for high-T c films. The typical critical current density, J c , is about 106 A/cm 2 at 77 K. X-ray diffraction showed that the superconducting thin films are nearly single 2223 phase and are highly oriented.

Structural and Electrical Properties of Colossal Magnetoresistive LSMO Thin Films Prepared by KrF Laser Ablation Method

2001 ◽  
Vol 666 ◽  
Author(s):  
Fumiaki Mitsugi ◽  
Tomoaki Ikegami ◽  
Kenji Ebihara ◽  
Jagdish Narayan ◽  
Alexander M. Grishin
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Electrical Properties ◽  
Lattice Mismatch ◽  
X Ray Diffraction ◽  
Axis Orientation ◽  
X Ray ◽  
Colossal Magnetoresistive ◽  
Laser Ablation Method ◽  
Structural And Electrical Properties

ABSTRACTWe prepared colossal magnetoresistive La0.8Sr0.2MnO3 thin films on the MgO, SrTiO3 and LaAlO3 single crystal substrates using KrF excimer pulsed laser ablation technique. The structural and electrical properties of the La0.8Sr0.2MnO3 thin films which were strained by the lattice mismatch are reported. The in-plane lattice mismatch between the La0.8Sr0.2MnO3 and MgO, SrTiO3 and LaAlO3 substrates are -7.8 %, -0.5 % and +2.3 %, respectively. The X-ray diffraction spectra of the films exhibited c-axis orientation. In the case of the La0.8Sr0.2MnO3 / LaAlO3 thin films with thickness over 100 nm, the divided (00l) peaks were observed. The surface morphology and transport property of the strongly stressed La0.8Sr0.2MnO3 / LaAlO3 were different from those of La0.8Sr0.2MnO3 / MgO and La0.8Sr0.2MnO3 / SrTiO3thin films.

SYNTHESIS AND CHARACTERIZATION OF HG-BASED SUPERCONDUCTING THIN FILMS PRODUCED STARTING FROM LASER-DEPOSITED PRECURSORS

2000 ◽  
Vol 14 (25n27) ◽  
pp. 2731-2736 ◽  
Author(s):  
M. BINDI ◽  
F. FUSO ◽  
N. PUCCINI ◽  
E. ARIMONDO ◽  
A. TAMPIERI ◽  
...  
Keyword(s):  
Thin Films ◽  
Laser Deposition ◽  
Precursor Film ◽  
Superconducting Thin Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Electron Microscopy Analysis ◽  
Zero Resistance ◽  
Microscopy Analysis

Correctly c-axis oriented HgBa 2 CaCu 2 O 6+δ thin films have been produced on (100) MgO single crystal substrates and characterized. Pulsed laser deposition has been exploited to deposit Hg-free Re-doped precursor which then underwent synthesis in evacuated and sealed quartz tubes. X-ray diffraction pattern of the precursor target shows the expected composition of oxides. Scanning electron microscopy analysis have been performed on the surface of the precursor film. Hg-1212 films have been analyzed by θ-2θ Bragg-Brentano X-ray diffractometry. The patterns show little contributions in composition of Hg-1223 phase. The films exhibit a transition temperature >120 K with zero-resistance at around 115 K.

ANNEALING EFFECTS OF TlCaBaCuO THIN FILMS ON YSZ SUBSTRATES

1990 ◽  
Vol 04 (07) ◽  
pp. 479-483 ◽  
Author(s):  
S. L. YAN ◽  
H. L. CAO ◽  
Q. X. SONG ◽  
X. M. YANG ◽  
J. YAN ◽  
...  
Keyword(s):  
Thin Films ◽  
Film Surface ◽  
Superconducting Thin Films ◽  
Superconducting Transition ◽  
X Ray Diffraction ◽  
X Ray ◽  
Annealing Conditions ◽  
Post Annealing ◽  
Annealing Effects ◽  
Zero Resistance

Superconducting thin films of Tl 2 Ca 2 Ba 2 Cu 3 O x have been prepared by dc magnetron sputtering from a pair of stoichiometric Tl-based targets onto YSZ substrates. The superconducting transition properties and the morphology of the films depend strongly on the post-annealing conditions. The zero resistance temperature for the best films we got is 117 K. X-ray diffraction analysis indicates that the annealed films with needle-like structure and terraced configuration are both highly c-axis oriented normal to the film surface.

Growth temperature dependence of crystal symmetry in Nb-doped BaTiO3 thin films

2013 ◽  
Vol 03 (02) ◽  
pp. 1350009 ◽  
Author(s):  
Young Heon Kim ◽  
Xubing Lu ◽  
Marco Diegel ◽  
Roland Mattheis ◽  
Dietrich Hesse ◽  
...  
Keyword(s):  
Thin Films ◽  
Growth Temperature ◽  
Defect Density ◽  
Lattice Parameter ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Diffraction Patterns ◽  
Threading Defects ◽  
Tetragonal Phase Transition

Growth temperature effects on the microstructure of Nb -doped BaTiO 3 thin films of the composition BaTi 0.98 Nb 0.02 O 3 are studied using X-ray diffraction and transmission electron microscopy (TEM). Reciprocal space maps and electron diffraction patterns show that the a-axis lattice parameter increases and the c-axis parameter decreases with increasing growth temperature, indicating a decrease of tetragonality. Bright-field TEM images show low and high densities of threading defects in films grown at low and high temperatures, respectively. The observations are discussed in terms of a hindering of the cubic-to-tetragonal phase transition by a high defect density and a high unit cell volume.

Synthesis of single phase YBa2Cu3O7−x thin films from a Y-Ba-Cu metallic precursor by a low-temperature annealing

1994 ◽  
Vol 9 (6) ◽  
pp. 1337-1342
Author(s):  
Takashi Hase ◽  
Ryusuke Kita ◽  
Kenichi Kawaguchi ◽  
Takeshi Koga ◽  
Tadataka Morishita
Keyword(s):  
Thin Films ◽  
Single Phase ◽  
Superconducting Thin Films ◽  
Ybco Thin Film ◽  
X Ray Diffraction ◽  
Metallic Precursor ◽  
X Ray ◽  
Low Temperature Annealing ◽  
Zero Resistance ◽  
Diffraction Peaks

YBa2Cu3O7−x (YBCO) superconducting thin films that show no x-ray diffraction peaks due to any other non-superconducting phases have been synthesized by annealing Y-Ba-Cu-O amorphous precursors at 750 °C. The Y-Ba-Cu-O precursors have been fabricated by oxidizing Y-Ba-Cu metallic precursors coevaporated from Y, Ba, and Cu metallic sources under ultrahigh vacuum conditions. Crystallization behavior from the Y-Ba-Cu-O precursor to YBCO films drastically depends on an oxidation temperature for the Y-Ba-Cu metallic precursor. YBCO thin film synthesized from the precursor oxidized at an optimum temperature shows a zero resistance temperature of over 80 K and a very smooth surface.

scholarly journals High Pressure X-ray Diffraction as a Tool for Designing Doped Ceria Thin Films Electrolytes

Coatings ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 724
Author(s):  
Sara Massardo ◽  
Alessandro Cingolani ◽  
Cristina Artini
Keyword(s):  
Thin Films ◽  
High Pressure ◽  
Rare Earth ◽  
Ionic Conductivity ◽  
Bulk Material ◽  
Threshold Temperature ◽  
Doped Ceria ◽  
X Ray Diffraction ◽  
X Ray ◽  
Rare Earth Doped

Rare earth-doped ceria thin films are currently thoroughly studied to be used in miniaturized solid oxide cells, memristive devices and gas sensors. The employment in such different application fields derives from the most remarkable property of this material, namely ionic conductivity, occurring through the mobility of oxygen ions above a certain threshold temperature. This feature is in turn limited by the association of defects, which hinders the movement of ions through the lattice. In addition to these issues, ionic conductivity in thin films is dominated by the presence of the film/substrate interface, where a strain can arise as a consequence of lattice mismatch. A tensile strain, in particular, when not released through the occurrence of dislocations, enhances ionic conduction through the reduction of activation energy. Within this complex framework, high pressure X-ray diffraction investigations performed on the bulk material are of great help in estimating the bulk modulus of the material, and hence its compressibility, namely its tolerance toward the application of a compressive/tensile stress. In this review, an overview is given about the correlation between structure and transport properties in rare earth-doped ceria films, and the role of high pressure X-ray diffraction studies in the selection of the most proper compositions for the design of thin films.

Determining the C60 molecular arrangement in thin films by means of X-ray diffraction

2011 ◽  
Vol 44 (5) ◽  
pp. 983-990 ◽  
Author(s):  
Chris Elschner ◽  
Alexandr A. Levin ◽  
Lutz Wilde ◽  
Jörg Grenzer ◽  
Christian Schroer ◽  
...  
Keyword(s):  
Thin Films ◽  
Structural Information ◽  
Grazing Incidence ◽  
Test Material ◽  
C60 Fullerene ◽  
Diffraction Measurement ◽  
X Ray Diffraction ◽  
X Ray ◽  
Molecular Arrangement ◽  
Diffraction Patterns

The electrical and optical properties of molecular thin films are widely used, for instance in organic electronics, and depend strongly on the molecular arrangement of the organic layers. It is shown here how atomic structural information can be obtained from molecular films without further knowledge of the single-crystal structure. C60 fullerene was chosen as a representative test material. A 250 nm C60 film was investigated by grazing-incidence X-ray diffraction and the data compared with a Bragg–Brentano X-ray diffraction measurement of the corresponding C60 powder. The diffraction patterns of both powder and film were used to calculate the pair distribution function (PDF), which allowed an investigation of the short-range order of the structures. With the help of the PDF, a structure model for the C60 molecular arrangement was determined for both C60 powder and thin film. The results agree very well with a classical whole-pattern fitting approach for the C60 diffraction patterns.

X-Ray Diffraction Analysis of High Tc Superconducting Thin Films

1989 ◽  
pp. 269-278
Author(s):  
T. C. Huang ◽  
A. Segmüller ◽  
W. Lee ◽  
V. Lee ◽  
D. Bullock ◽  
...  
Keyword(s):  
Thin Films ◽  
Diffraction Analysis ◽  
Superconducting Thin Films ◽  
X Ray Diffraction ◽  
High Tc ◽  
X Ray

scholarly journals Elaboration of nitride thin films by reactive sputtering

2006 ◽  
Vol 59 (2) ◽  
pp. 225-232 ◽  
Author(s):  
Pierre Yves Jouan ◽  
Arnaud Tricoteaux ◽  
Nicolas Horny
Keyword(s):  
Thin Films ◽  
Compressive Stress ◽  
Bias Voltage ◽  
Substrate Surface ◽  
Lattice Parameter ◽  
X Ray Diffraction ◽  
X Ray ◽  
A Value ◽  
Dc Reactive Magnetron Sputtering ◽  
Nitrogen Contents

The aim of this paper is first a better understanding of DC reactive magnetron sputtering and its implications, such as the hysteresis effect and the process instability. In a second part, this article is devoted to an example of specific application: Aluminium Nitride. AlN thin films have been deposited by reactive triode sputtering. We have studied the effect of the nitrogen contents in the discharge and the RF bias voltage on the growth of AlN films on Si(100) deposited by triode sputtering. Stoichiometry and crystal orientation of AlN films have been characterized by means of Fourier-transform infrared spectroscopy, X-ray diffraction and secondary electron microscopy. Dense and transparent AlN layers were obtained at high deposition rates. These films have a (002) orientation whatever the nitrogen content in the discharge, but the best crystallised ones are obtained at low value (10%). A linear relationship was observed between the AlN lattice parameter "c" (perpendicular to the substrate surface) and the in-plane compressive stress. Applying an RF bias to the substrate leads to a (100) texture, and films become amorphous. Moreover, the film's compressive stress increases up to a value of 8GPa before decreasing slowly as the bias voltage increases.

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