Accurate Modeling of Residual recoil-mixing during SIMS Measurements

2001 ◽  
Vol 669 ◽  
Author(s):  
Ming Hong Yang ◽  
Robert Odom
Keyword(s):  
Mass Spectrometry ◽  
Mass Transport ◽  
Response Function ◽  
Secondary Ion Mass Spectrometry ◽  
Ion Beam ◽  
Residual Effect ◽  
Analytical Technique ◽  
Depth Profiles ◽  
Secondary Ion ◽  
Powerful Analytical Technique

ABSTRACTSecondary ion mass spectrometry (SIMS) is an effective and powerful analytical technique, widely used in accurately determining dopant distributions (depth profiles). However, primary ion beam induced mass transport (ion mixing), especially the residual effect during SIMS profile measurements, greatly limits theaccuracy at nanometer depth resolutions by displacing and broadening the measured depth profile. In this paper, we present a simple deconvolution algorithm based on the general characteristics of the experimentally observed SIMS response function to reduce this broadening effect, thereby providing more accurate depth profiles. The results for several specific applications of this approach are presented and its strengths and limitations are discussed.

Accurate CsM+ SIMS Aluminum Dopant Profiling in SiC

2006 ◽  
Vol 527-529 ◽  
pp. 629-632 ◽  
Author(s):  
Howard E. Smith ◽  
Bang Hung Tsao ◽  
James D. Scofield
Keyword(s):  
Mass Spectrometry ◽  
Silicon Carbide ◽  
Concentration Profile ◽  
Secondary Ion Mass Spectrometry ◽  
Ion Beam ◽  
Dopant Profiling ◽  
Depth Profiles ◽  
Empirical Correction ◽  
The Matrix ◽  
Secondary Ion

The accuracy of Secondary Ion Mass Spectrometry (SIMS) depth profiles of aluminum (Al) dopant in silicon carbide (SiC) has been investigated. The Al SIMS profile differs in shape depending on whether it was obtained using a cesium (Cs+) or oxygen (O2 +) primary ion beam, and depends in the former case on which secondary ion is followed. The matrix signals indicate that the CsAl+ secondary ion yield changes during the Cs+ depth profile, probably because of the work function lowering due to the previously-implanted Al. These same matrix ion signals are used for a depth-dependent empirical correction to increase the accuracy of the Al concentration profile. The physics of these phenomena and the accuracy of the correction are discussed.

Visualizing mass transport in desorption electrospray ionization using time-of-flight secondary ion mass spectrometry: a look at the geometric configuration of the spray

The Analyst ◽  
2014 ◽  
Vol 139 (22) ◽  
pp. 5868-5878 ◽  
Author(s):  
Shin Muramoto
Keyword(s):  
Mass Spectrometry ◽  
Mass Transport ◽  
Electrospray Ionization ◽  
Secondary Ion Mass Spectrometry ◽  
Time Of Flight ◽  
Desorption Electrospray Ionization ◽  
Geometric Configuration ◽  
Ion Mass Spectrometry ◽  
Secondary Ion

The desorption profile of analyte molecules desorbed by desorption electrospray ionization was imaged and characterized using time-of-flight secondary ion mass spectrometry.

Effects of Cryogenic Sample Analysis on Molecular Depth Profiles with TOF-Secondary Ion Mass Spectrometry

2010 ◽  
Vol 82 (19) ◽  
pp. 8291-8299 ◽  
Author(s):  
Alan M. Piwowar ◽  
John S. Fletcher ◽  
Jeanette Kordys ◽  
Nicholas P. Lockyer ◽  
Nicholas Winograd ◽  
...  
Keyword(s):  
Mass Spectrometry ◽  
Secondary Ion Mass Spectrometry ◽  
Sample Analysis ◽  
Depth Profiles ◽  
Ion Mass Spectrometry ◽  
Secondary Ion

Metal cluster complex primary ion beam source for secondary ion mass spectrometry (SIMS)

Vacuum ◽  
2009 ◽  
Vol 84 (5) ◽  
pp. 544-549 ◽  
Author(s):  
Yukio Fujiwara ◽  
Kouji Watanabe ◽  
Hidehiko Nonaka ◽  
Naoaki Saito ◽  
Atsushi Suzuki ◽  
...  
Keyword(s):  
Mass Spectrometry ◽  
Secondary Ion Mass Spectrometry ◽  
Metal Cluster ◽  
Ion Beam ◽  
Cluster Complex ◽  
Beam Source ◽  
Ion Mass Spectrometry ◽  
Secondary Ion

scholarly journals Helium ion microscope – secondary ion mass spectrometry for geological materials

2020 ◽  
Vol 11 ◽  
pp. 1504-1515
Author(s):  
Matthew R Ball ◽  
Richard J M Taylor ◽  
Joshua F Einsle ◽  
Fouzia Khanom ◽  
Christelle Guillermier ◽  
...  
Keyword(s):  
Mass Spectrometry ◽  
Secondary Ion Mass Spectrometry ◽  
Ion Beam ◽  
Isotopic Analysis ◽  
Green Economy ◽  
Case Scenario ◽  
Helium Ion ◽  
Ion Mass Spectrometry ◽  
Focussed Ion Beam ◽  
Secondary Ion

The helium ion microscope (HIM) is a focussed ion beam instrument with unprecedented spatial resolution for secondary electron imaging but has traditionally lacked microanalytical capabilities. With the addition of the secondary ion mass spectrometry (SIMS) attachment, the capabilities of the instrument have expanded to microanalysis of isotopes from Li up to hundreds of atomic mass units, effectively opening up the analysis of all natural and geological systems. However, the instrument has thus far been underutilised by the geosciences community, due in no small part to a lack of a thorough understanding of the quantitative capabilities of the instrument. Li represents an ideal element for an exploration of the instrument as a tool for geological samples, due to its importance for economic geology and a green economy, and the difficult nature of observing Li with traditional microanalytical techniques. Also Li represents a “best-case” scenario for isotopic measurements. Here we present details of sample preparation, instrument sensitivity, theoretical, and measured detection limits for both elemental and isotopic analysis as well as practicalities for geological sample analyses of Li alongside a discussion of potential geological use cases of the HIM–SIMS instrument.

Quantitation of Secondary Ion Mass Spectrometry (SIMS) for HgCdTe.

1983 ◽  
Vol 25 ◽  
Author(s):  
Lawrence E. Lapides ◽  
George L. Whiteman ◽  
Robert G. Wilson
Keyword(s):  
Mass Spectrometry ◽  
Ion Implantation ◽  
Ionization Potential ◽  
Electron Affinity ◽  
Secondary Ion Mass Spectrometry ◽  
Relative Sensitivity ◽  
Depth Profiles ◽  
Ion Mass Spectrometry ◽  
Sensitivity Factors ◽  
Secondary Ion

ABSTRACTQuantitative depth profiles of impurities in LPE layers of HgCdTe have been determined using relative sensitivity factors calculated from ion implantation profiles. Standards were provided for Li, Be, B, C, F, Na, Mg, Al, Si, P, S, Cl, Cu, Ga, As, Br, and In. Relative sensitivity factors as a function of ionization potential for O2+ primary ion SIMS and electron affinity for Cs+ primary ion SIMS have been calculated in order to extend quantitation to elements not yet implanted. Examples of depth profiles for implant standards and unimplanted layers are given.

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