Material Characterization of Epitaxial GaAs and Ge Films on (100) Si Substrates

1986 ◽  
Vol 67 ◽  
Author(s):  
M. Abdul Awal ◽  
El Hang Lee ◽  
G. L. Koos ◽  
E. Y. Chan ◽  
G. K. Celler ◽  
...  
Keyword(s):  
Material Characterization ◽  
Defect Density ◽  
Electrical Characterization ◽  
Electron Beam Evaporation ◽  
Cross Sectional ◽  
X Ray ◽  
Si Substrates ◽  
Exponential Decrease ◽  
Gaas Films

ABSTRACTWe report some results on the chemical, structural and electrical characterization of Ge and GaAs films, grown on Si (100) substrates by electron-beam evaporation and MOCVD, respectively. Good quality Ge films have been obtained at 700°C substrate temperature at a growth rate of 5 nm/sec in 5 × 10−7 torr. Similarly, good GaAs films were obtained at 650°C and at 0.3 nm/sec. RBS data for GaAs films (1.1 μm) show Xmin approaching 3.5%, and Ge films (1.5 μm) around 3.6%. Photoluminescence of the same films show peaks around 852 nm with FWHM of 14 meV. Cross-sectional TEM and etching show a near-exponential decrease in defect density away from the Ge/Si interface. Detailed characterization results of the S-R, I-V, C-V, and X-ray studies are also described.

Epitaxial growth and characterization of BP on Si(100) substrate for use in c-GaN study

2005 ◽  
Vol 891 ◽  
Author(s):  
Tomohiko Takeuchi ◽  
Suzuka Nishimura ◽  
Tomoyuki Sakuma ◽  
Satoru Matumoto ◽  
Kazutaka Terashima
Keyword(s):  
Epitaxial Layer ◽  
Careful Analysis ◽  
X Ray Diffraction ◽  
Si Substrate ◽  
Cross Sectional ◽  
X Ray ◽  
Si Substrates ◽  
Impurity Doping ◽  
Hall Effect Measurements

ABSTRACTBoronmonophosphide(BP) is one of the suitable materials for a buffer layer between the c-GaN(100) and Si(100) substrates. The growth of BP layer was carried out by MOCVD on Si(100) substrate of 2 inch in diameter. The growth rate was over 2 μm/h without any troubles such as the bowing or cracking. In addition, the thickness of BP epitaxial layer was uniform over a wide area. A careful analysis of x-ray diffraction suggested that the growth of BP epitaxial layer inherited the crystal orientation from Si(100) substrate. Cross-sectional TEM images showed some defects like dislocations near the interface between BP layer and Si substrate. The Hall effect measurements indicated that the conduction type of BP films grown on the both n-Si and p-Si substrates was n-type without impurity doping, and that the mobility and carrier concentrations were typically 357cm2/Vs and 1.5×1020cm−3(on n-Si) and 63cm2/Vs and 1.9×1019cm−3(on p-Si), respectively. In addition, c-GaN was grown on the substrate of BP/Si(100) by RF-MBE.

Structural and Electrical Characterization of TiB2/TiSi2 Bilayer Barrier Structure

1996 ◽  
Vol 441 ◽  
Author(s):  
G. Sade ◽  
J. Pelleg ◽  
A. Grisaru
Keyword(s):  
Diffusion Barrier ◽  
Vacuum Annealing ◽  
Schottky Diodes ◽  
Electrical Characterization ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
X Ray ◽  
Current Voltage ◽  
Thermal Stability Of

AbstractThe TiB2/TiSi2 bilayer is considered as a diffusion barrier in metallization system with Cu. The TiSi2 sublayer serves as a contact and also as an additional diffusion barrier against boron, which outdiffuses from TiB2 at high temperature annealing. The attempts to form TiSi2 by vacuum annealing of TiB2/Ti film, which was obtained by co-sputtering from elemental targets are described. The composition and the structure of the films were analyzed by Auger electron spectroscopy (AES), X-ray diffraction (XRD) and high-resolution cross-sectional TEM (HRXTEM). The Cu/TiB2/(Ti-Si)/n-Si contacts were investigated using current-voltage (I–V) on Schottky diode structures, which were prepared on n-type Si (100). The thermal stability of the TiB2/(Ti-Si) barrier was studied by structural and electrical analysis.It was observed that the lowest sheet resistance of 5.1 Ω/‪ was obtained after 850 °C annealing for 30 min, however the resulting Ti-Si layer is practically still amorphous and contains only a very small fraction of C54 TiSis in the form of microcrystallites. This layer also contained Ti5Si3 as indicated by XRD. The barrier height of Cu/TiB2/(Ti-Si)/n-Si Schottky diodes is ˜0.6 V and it does not show significant changes in the range 400–700 °C. Electrical monitoring is a very effective tool to detect deterioration of the barrier. No penetration is observed by AES at 700 °C, while the I–V curve shows changes in properties.

Structural Characterization of P-I-N Diode Superlattice Structures Grown on , , and Orientation Si Substrates

1991 ◽  
Vol 220 ◽  
Author(s):  
P. M. Adams ◽  
R. C. Bowman ◽  
V. Arbet-Engols ◽  
K. L. Wang ◽  
C. C. Ahn
Keyword(s):  
Electron Microscopy ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
Substrate Orientation ◽  
X Ray ◽  
Si Substrates ◽  
Transmission Electron ◽  
Superlattice Structures ◽  
Strained Layer Superlattices

ABSTRACTP-I-N diodes whose intrinsic region consists of strained layer superlattices (SLS), separated by 40 nm Si spacers, have been grown by MBE on Si substrates with <100>, <110>, and <111> orientations. These structures have been characterized by x-ray diffraction (XRD) and cross-sectional transmission electron microscopy (XTEM). The dual periodicities in these structures produced unique XRD effects and the quality was highly dependent on substrate orientation. The <100> sample was in general free of defects, whereas the <110> and <111> specimens contained significant numbers of twins and dislocations.

Process and Simulation of TiSi2/n+/p Silicon Shallow Junctions

1991 ◽  
Vol 235 ◽  
Author(s):  
Ying Wu ◽  
W. Savin ◽  
T. Fink ◽  
N. M. Ravindra ◽  
R. T. Lareau ◽  
...  
Keyword(s):  
Electrical Characterization ◽  
Furnace Annealing ◽  
Si Substrates ◽  
Conventional Furnace ◽  
Mass Spec ◽  
Current Voltage ◽  
Shallow Junctions ◽  
Current Voltage Characteristics ◽  
Secondary Ion

ABSTRACTExperimental analysis and simulation of the formation and electrical characterization of TiSi2/+/p-Si shallow junctions are presented here. The formation of shallow n+-p junction, by ion implantation of As through Ti films evaporated on p-Si substrates followed by Rapid Thermal Annealing (RTA) and conventional furnace annealing has been performed in these experiments. Structural techniques such as Secondary Ion Mass Spec-troscopy (SIMS) and Rutherford Backscattering (RBS) experiments have been employed to characterize these devices. RUMP simulations were used to analyze and interpret the RBS data. Current-voltage characteristics have been simulated using PISCES simulator.

Characterization of Fine-Pixel X-Ray Imaging Detector Array Fabricated by Using Thick Single-Crystal CdTe Layers on Si Substrates Grown by MOVPE

2019 ◽  
Vol 66 (1) ◽  
pp. 518-523
Author(s):  
Madan Niraula ◽  
Kazuhito Yasuda ◽  
Shintaro Tsubota ◽  
Taiki Yamaguchi ◽  
Junya Ozawa ◽  
...  
Keyword(s):  
Single Crystal ◽  
Detector Array ◽  
X Ray ◽  
Si Substrates ◽  
X Ray Imaging ◽  
Imaging Detector

Direct Deposition Reactions Between Nickel and Silicon Substrates

1993 ◽  
Vol 311 ◽  
Author(s):  
Lin Zhang ◽  
Douglas G. Ivey
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Silicon Substrates ◽  
Silicide Formation ◽  
Cross Sectional ◽  
Deposition Rates ◽  
Plan View ◽  
X Ray ◽  
Si Substrates ◽  
Transmission Electron

ABSTRACTSilicide formation through deposition of Ni onto hot Si substrates has been investigated. Ni was deposited onto <100> oriented Si wafers, which were heated up to 300°C, by e-beam evaporation under a vacuum of <2x10-6 Torr. The deposition rates were varied from 0.1 nm/s to 6 nm/s. The samples were then examined by both cross sectional and plan view transmission electron microscopy (TEM), energy dispersive x-ray spectroscopy and electron diffraction. The experimental results are discussed in terms of a new kinetic model.

scholarly journals Characterization of Gaas/Si/GaAs Heterointerfaces

1989 ◽  
Vol 148 ◽  
Author(s):  
Zuzanna Liliental-Weber ◽  
Raymond P. Mariella
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Low Temperature ◽  
Defect Density ◽  
Si Substrate ◽  
Reverse Polarity ◽  
Si Substrates ◽  
Transmission Electron ◽  
Metal Semiconductor Metal

ABSTRACTTransmission electron microscopy of GaAs grown on Si for metal-semiconductor-metal photodetectors is presented in this paper. Two kinds of samples are compared: GaAs grown on a 15 Å Si epilayer grown on GaAs, and GaAs grown at low temperature (300°C) on Si substrates. It is shown that the GaAs epitaxial layer grown on thin Si layer has reverse polarity to the substrate (antiphase relation). Higher defect density is observed for GaAs grown on Si substrate. This higher defect density correlates with an increased device speed, but with reduced sensitivity.

Fabrication and Electrical Characterization of Heterojunction Mn-Doped GaN Nanowire Diodes on n-Si Substrates (GaN:Mn NW/n-Si)

2009 ◽  
Vol 38 (4) ◽  
pp. 505-510 ◽  
Author(s):  
Tae-Hong Kim ◽  
Chan-Oh Jang ◽  
Han-Kyu Seong ◽  
Heon-Jin Choi ◽  
Sang-Kwon Lee
Keyword(s):  
Electrical Characterization ◽  
Si Substrates ◽  
Gan Nanowire ◽  
Mn Doped

Preparation and Electrical Characterization of Poly(Aniline) NanoClay Composites

2015 ◽  
Vol 34 (4) ◽  
Author(s):  
Esma Ahlatcioǧlu ◽  
Bahire Filiz şenkal ◽  
Mustafa Okutan
Keyword(s):  
Electrical Characterization ◽  
Synthesis And Characterization ◽  
X Ray Diffraction ◽  
Inorganic Hybrid ◽  
X Ray ◽  
Ft Ir ◽  
Doped Polyaniline ◽  
Poly Aniline ◽  
Scanning Electron

AbstractIn this work, synthesis and characterization of composite materials based on NanoClay(NC) and boric acid doped PolyAniline (PANI) is studied. PANI was successfully incorporated into NC to form PANI-NC composites. The resulting organic-inorganic hybrid material, PANI-NC was characterized by various physicochemical techniques. Formation of PANI inside the clay tactoid has been confirmed by X-ray diffraction studies (XRD), scanning electron microscope (SEM) and FT-IR. Also, conductivity and physical properties of the PANI-NC composites were investigated.

Molecular Beam Epitaxial Growth and Characterization of GaAs Films on Thin Si Substrates

1998 ◽  
Vol 37 (Part 1, No. 1) ◽  
pp. 39-44 ◽  
Author(s):  
Kenzo Maehashi ◽  
Hisao Nakashima ◽  
Frank Bertram ◽  
Peter Veit ◽  
Jürgen Christen
Keyword(s):  
Epitaxial Growth ◽  
Molecular Beam ◽  
Si Substrates ◽  
Molecular Beam Epitaxial ◽  
Gaas Films ◽  
Molecular Beam Epitaxial Growth
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