Electrical Performance and Scalability of Ni-monosilicide towards sub 0.13 μm Technologies
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ABSTRACTThe relationship between silicide thickness, sheet resistance and silicon consumption is experimentally checked for Co-disilicide and Ni-monosilicide. The reverse bias leakage current of shallow Ni-silicided and Co-silicided square diodes is compared for varying junction depth and varying silicide thickness. A lower reverse bias leakage current is obtained for a Ni-silicided shallow junction as compared to its Co-silicided counterpart. This can be attributed to the reduced silicon consumption. The Ti cap does not play an active role during the Ni-silicidation of narrow active area and poly lines. It is shown that a Ni-silicidation process is scalable without Ti cap.
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Influence of Overgrown Micropipes in the Active Area of SiC Schottky Diodes on Long Term Reliability
2005 ◽
Vol 483-485
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pp. 925-928
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2018 ◽
Vol 7
(1)
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pp. 71-96
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