Electrical Performance and Scalability of Ni-monosilicide towards sub 0.13 μm Technologies

2001 ◽  
Vol 670 ◽  
Author(s):  
Anne Lauwers ◽  
Muriel de Potter ◽  
Richard Lindsay ◽  
An Steegen ◽  
Nico Roelandts ◽  
...  

ABSTRACTThe relationship between silicide thickness, sheet resistance and silicon consumption is experimentally checked for Co-disilicide and Ni-monosilicide. The reverse bias leakage current of shallow Ni-silicided and Co-silicided square diodes is compared for varying junction depth and varying silicide thickness. A lower reverse bias leakage current is obtained for a Ni-silicided shallow junction as compared to its Co-silicided counterpart. This can be attributed to the reduced silicon consumption. The Ti cap does not play an active role during the Ni-silicidation of narrow active area and poly lines. It is shown that a Ni-silicidation process is scalable without Ti cap.

2006 ◽  
Vol 912 ◽  
Author(s):  
Kanna Adachi ◽  
Kazuya Ohuchi ◽  
Nobutoshi Aoki ◽  
Hideji Tsujii ◽  
Takayuki Ito ◽  
...  

AbstractWe have investigated MSA, namely, Laser Spike Annealing (LSA) and Flash Lamp Annealing (FLA), dopant activation technology of source/drain extension for 45 nm node, which can be substituted for spike RTA. Since it is possible to achieve a similar relation between a sheet resistance and a junction depth by using either FLA or LSA, both annealing methods are capable of providing the junction characteristics required by the ITRS target. However, we have noticed that there are three crucial issues from the viewpoints of device integration and CMOSFET performance: junction leakage current, gate leakage current and pattern dependence. In this report, we discuss these issues and indicate how to cope with them.


2002 ◽  
Vol 717 ◽  
Author(s):  
Sungkweon Baek ◽  
Taesung Jang ◽  
Hyunsang Hwang

AbstractThe influence of low temperature pre-annealing on p+/n ultra-shallow junction was investigated. An ultra-shallow junction was formed by means of B2H6 plasma doping at an energy of 500V. The activation was performed by excimer laser annealing. To study the low temperature annealing prior to laser annealing, furnace annealing at 300°C∼500°C for 5min was performed. Compared with control samples with no pre-annealing, the low temperature preannealing significantly improves junction characteristics, resulting in a reduction of junction depth and a lower leakage current density. A cross-sectional transmission electron microscopy analysis confirmed the lower defect density, which explains the lower leakage current. By optimizing the process conditions, excellent electrical characteristics of the p+/n ultra-shallow junction such as a junction depth of 28nm and a sheet resistance of 250Δ/sq. can be obtained.


2002 ◽  
Vol 716 ◽  
Author(s):  
Anne Lauwers ◽  
Muriel de Potter ◽  
Richard Lindsay ◽  
Oxana Chamirian ◽  
Caroline Demeurisse ◽  
...  

AbstractIn this work the reverse bias junction leakage was studied for Co-silicided 100 nm deep As source/drain junctions. The effect of pre-clean and silicidation temperature was investigated. The area component of the leakage current was found to be dominant for silicided source/drain areas wider than 1 mm. Increasing the thermal budget for silicidation was found to improve the area leakage. For diodes consisting of active area stripes narrower than 0.5 μm, the leakage current is no longer improved by increasing the silicidation temperature. As a result the leakage current is found to depend strongly on the active area linewidth. It was found that the linewidth dependence of the junction leakage cannot be attributed to silicide induced stress. It is argued that the higher leakage current observed for narrow lines can be attributed to the stress induced by the STI isolation and to increased silicide thickness in the narrow active lines


2020 ◽  
Vol 22 (3) ◽  
pp. 330-343
Author(s):  
Fabio Camilletti

It is generally assumed that The Vampyre was published against John Polidori's will. This article brings evidence to support that he played, in fact, an active role in the publication of his tale, perhaps as a response to Frankenstein. In particular, by making use of the tools of textual criticism, it demonstrates how the ‘Extract of a Letter from Geneva’ accompanying The Vampyre in The New Monthly Magazine and in volume editions could not be written without having access to Polidori's Diary. Furthermore, it hypothesizes that the composition of The Vampyre, traditionally located in Geneva in the course of summer 1816, can be postdated to 1818, opening up new possibilities for reading the tale in the context of the relationship between Polidori, Byron, and the Shelleys.


2002 ◽  
Vol 716 ◽  
Author(s):  
Yi-Mu Lee ◽  
Yider Wu ◽  
Joon Goo Hong ◽  
Gerald Lucovsky

AbstractConstant current stress (CCS) has been used to investigate the Stress-Induced Leakage Current (SILC) to clarify the influence of boron penetration and nitrogen incorporation on the breakdown of p-channel devices with sub-2.0 nm Oxide/Nitride (O/N) and oxynitride dielectrics prepared by remote plasma enhanced CVD (RPECVD). Degradation of MOSFET characteristics correlated with soft breakdown (SBD) and hard breakdown (HBD), and attributed to the increased gate leakage current are studied. Gate voltages were gradually decreased during SBD, and a continuous increase in SILC at low gate voltages between each stress interval, is shown to be due to the generation of positive traps which are enhanced by boron penetration. Compared to thermal oxides, stacked O/N and oxynitride dielectrics with interface nitridation show reduced SILC due to the suppression of boron penetration and associated positive trap generation. Devices stressed under substrate injection show harder breakdown and more severe degradation, implying a greater amount of the stress-induced defects at SiO2/substrate interface. Stacked O/N and oxynitride devices also show less degradation in electrical performance compared to thermal oxide devices due to an improved Si/SiO2 interface, and reduced gate-to-drain overlap region.


2005 ◽  
Vol 483-485 ◽  
pp. 925-928 ◽  
Author(s):  
Roland Rupp ◽  
Michael Treu ◽  
Peter Türkes ◽  
H. Beermann ◽  
Thomas Scherg ◽  
...  

Other than open micropipes (MP), overgrown micropipes do not necessarily lead to a^significantly reduced blocking capability of the affected SiC device. However they can lead to a degradation of the device during operation. In this paper the physical structure of overgrown micropipes will be revealed and their contribution to the leakage current will be shown. The possible impact of the high local power dissipation in the surrounding of the overgrown micropipe will be discussed and long term degradation mechanisms will be described. Failure simulation under laboratory conditions shows a clear correlation between the position of overgrown micropipes and the location of destructive burnt spots.


2002 ◽  
Vol 30 (3) ◽  
pp. 347-360
Author(s):  
Elmer S. Miller

Research reports on Christian missions to foreign lands have tended to focus on the relationship between missionary and native people, giving little attention to the interplay of nation-state agencies. Furthermore, the reports portray a one-way process in which the missionary gives and natives receive, although the intervention actually entails multiple agents influencing one another. This study documents the dynamic interaction among a Mennonite Mission, Argentine national and state indigenous policies, and Toba aborigines throughout the latter twentieth century. It illustrates the active role played by the Toba in reformulating both the missionary message and nation-state policy.


1998 ◽  
Vol 532 ◽  
Author(s):  
M. Kase ◽  
Y Kikuchi ◽  
H. Niwa ◽  
T. Kimura

ABSTRACTThis paper describes ultra shallow junction formation using 0.5 keV B+/BF2+ implantation, which has the advantage of a reduced channeling tail and no transient enhanced diffusion. In the case of l × 1014 cm−2, 0.5 keV BF2 implantation a junction depth of 19 nm is achieved after RTA at 950°C.


2020 ◽  
Vol 14 (1) ◽  
pp. 1-22
Author(s):  
Muhammad Akrom Adabi ◽  
Neny Muthi'atul Awwaliyah

AbstractThe Qur’an, which has the status of a Muslim holy book, is experiencing "alienation" because it is considered unable to make practical contributions to various new challenges that arise. Al-Qur’an and Pancasila, which are the two important handles of Indonesian Muslims, are expected to not only keep up with the times. More than that, the al-Qur’an and Pancasila must really be able to fill the void and give an active role through its values, to bring the progress of Indonesia with a distinctive personality in the face of the Industrial 4.0 era. This paper tries to review the strengthening of Muslim Hub as a strategy in dealing with Industry 4.0 through contextualization of the values of the Koran and Pancasila. This study uses Max Weber's theory of Protestant ethics. In a book entitled The Protestant Ethics and Spirit of Capitalism, Weber has done a thorough analysis of the relationship between capitalism and religion. AbstrakAl-Qur’an dan Pancasila harus betul-betul mampu mengisi kekosongan dan memberi peran aktif melalui nilai-nilainya, untuk membawa kemajuan Indonesia dengan kepribadian yang khas dalam menghadapi era Industri 4.0. Tulisan ini mencoba mengulas seputar penguatan muslim hub sebagai strategi dalam menghadapi Industri 4.0 melalui kontekstualisasi nilai al-Qur’an dan Pancasila. Dalam penelitian ini ada dua bukti empiris yang pertama order monastic, dimana orang saleh ternyata juga memiliki prestasi yang gemilang dari sisi material. Kedua sekte protestan yang memiliki prestasi yang gemilang dalam fase awal munculnya kapitalisme modern. Penelitian ini menggunakan teori Max Weber tentang etika Protestan. Dalam buku yang berjudul The Protestan Ethics and Spirit of Capitalism, Weber telah melakukan analisa yang mendalam mengenai relasi kapitalisme dan keagamaan yang menunjukkan betapa agama memiliki pengaruh kuat dalam pembentukan karakter pemeluknya. Jika ditarik ke kajian yang lebih luas, maka ideologi memiliki peran kuat dalam mempengaruhi perilaku pengikutnya, baik ideologi keagamaan maupun ideologi kenegaraan. Kata Kunci: Kontekstualisasi, Al-Qur’an, Pancasila, Industri 4.0.


2018 ◽  
Vol 7 (1) ◽  
pp. 71-96
Author(s):  
María Mare ◽  
Enrique Pato

The distribution of DDPP in raising constructions –depending on the embedded clause’s formal properties– has been essential for Case Theory and movement. Likewise, the behavior of DDPP, according to agreement facts, has given rise to relevant discussions about the kind of movement involved (A-Movement/A’-Movement). Nevertheless, this distribution is not so clear in certain Spanish dialects, which shows a double agreement effects. It means that the embedded verb as well as the raising verb (parecer ‘to seem’) present inflectional number (and person) morphology: Parece-n que lo olvida-n (seem.3PL that it forget.3PL ‘They seem to forget him’). The analysis of the data in these varieties allows us to define many characteristics which are relevant from a descriptive and a theoretical point of view. Descriptively, it is possible to identify some notable particularities, with respect to the position of the DP, which triggers agreement and the interaction of these constructions with dative experiencers as well (Me parece que... ‘It seems to me that...’). From a theoretical point of view, these data have consequences for approaches on agreement, on the relationship between Case and movement, and on the discussion regarding the Experiencer Paradox in Spanish. Additionally, they allow us to identify a new empirical domain in which a DP plural number feature has an active role in the Probe-Goal domain.


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