Thermoelectric Properties of Bi-Sb-Te-X Compounds Prepared by MA-PDS Method

2001 ◽  
Vol 691 ◽  
Author(s):  
Yong-Ho Park ◽  
Liu Xue-Dong

ABSTRACTA great potential for further improving the room-temperature figure of merit (Z) has been identified by dispersing a small fraction of Ag in the (Bi0.25Sb0.75)2Te3 alloy. The maximum Z of 3.41×10−3K−1, 17% higher than that of the unadded, is attained at 0.02wt% Ag. Addition of BN, either alone or in combination with Ag, however, does not generate a favorable figure of merit.

1998 ◽  
Vol 545 ◽  
Author(s):  
Ke-Feng Cai ◽  
Ce-Wen Nan ◽  
Xin-Min Min

AbstractB4C ceramics doped with various content of Si (0 to 2.03 at%) are prepared via hot pressing. The composition and microstructure of the ceramics are characterized by means of XRD and EPMA. Their electrical conductivity and Seebeck coefficient of the samples are measured from room temperature up to 1500K. The electrical conductivity increases with temperature, and more rapidly after 1300K; the Seebeck coefficient of the ceramics also increases with temperature and rises to a value of about 320μVK−1. The value of the figure of merit of Si-doped B4C rises to about 4 × 10−4K−1 at 1500K.


2015 ◽  
Vol 17 (7) ◽  
pp. 5386-5392 ◽  
Author(s):  
Alberto Torres ◽  
Renato B. Pontes ◽  
Antônio J. R. da Silva ◽  
Adalberto Fazzio

We theoretically investigate, as a function of the stretching, the behaviour of the Seebeck coefficient, the electronic heat conductance and the figure of merit of a molecule-based junction composed of a benzene-1,4-dithiolate (BDT) molecule coupled to Au(111) surfaces at room temperature.


2010 ◽  
Vol 1267 ◽  
Author(s):  
Adul Harnwunggmoung ◽  
Ken Kurosaki ◽  
Hiroaki Muta ◽  
Shinsuke Yamanaka

AbstractCoSb3 is known as a skutterudite compound that could exhibit high thermoelectric figure of merit. However, the thermal conductivity of CoSb3 is relatively high. In order to enhance the thermoelectric performance of this compound, we tried to reduce the thermal conductivity of CoSb3 by substitution of Rh for Co and by Tl-filling into the voids. The polycrystalline samples of (Co,Rh)Sb3 and Tl-filled CoSb3 were prepared and the thermoelectric properties such as the Seebeck coefficient, electrical resistivity, and thermal conductivity were measured in the temperature range from room temperature to 750 K. The Rh substitution for Co reduced the lattice thermal conductivity, due to the alloy scattering effect. The minimum value of the lattice thermal conductivity was 4 Wm-1K-1 at 750 K obtained for (Co0.7Rh0.3)Sb3. Also the lattice thermal conductivity rapidly decreased with increasing the Tl-filling ratio. T10.25Co4Sb12 exhibited the best ZT values; the maximum ZT was 0.9 obtained at 600 K.


2018 ◽  
Vol 773 ◽  
pp. 145-151
Author(s):  
Min Soo Park ◽  
Gook Hyun Ha ◽  
Hye Young Koo ◽  
Yong Ho Park

The Bi–Te thermoelectric system shows an excellent figure of merit (ZT) near room temperature. Research on increasing the ZT value for n‑type Bi–Te is imperative because the thermoelectric properties of this compound are inferior to those of the p-type material. For this purpose, n-type Bi2Te3-ySey powders with various amounts of Se dopant (0.3 ≤ y ≤ 0.6) were synthesized by a vacuum melting-grinding process to improve the physical properties. The ZT value of the sintered bodies was investigated in the temperature range of 298–423 K with regard to the electrical and thermal characteristics. As the Se content increased, the electrical conductivity decreased owing to a reduction in the carrier concentration, which improved the overall value of ZT. The thermal conductivity clearly decreased as the Se content increased in the temperature range of 298–373 K due to increased alloy scattering, as well as a reduction in the lattice thermal conductivity caused by crystal grain boundary scattering. At room temperature, Bi2Te2.7Se0.3 (y = 0.3) exhibited the highest ZT of 0.85. At increased temperatures, the ZT value was highest for Bi2Te2.55Se0.45 (y = 0.45), indicating that the optimal effect of the Se dopants varies depending on the temperature range.


2004 ◽  
Vol 449-452 ◽  
pp. 905-908 ◽  
Author(s):  
Dong Choul Cho ◽  
Cheol Ho Lim ◽  
D.M. Lee ◽  
Seung Y. Shin ◽  
Chung Hyo Lee

The n-type thermoelectric materials of Bi2Te2.7Se0.3 doped with SbI3 were prepared by spark plasma sintering technique. The powders were ball-milled in an argon and air atmosphere. Then, powders were reduced in H2 atmosphere. Effects of oxygen content on the thermoelectric properties of Bi2Te2.7Se0.3 compounds have been investigated. Seebeck coefficient, electrical resistivity and thermal conductivity of the sintered compound were measured at room temperature. It was found that the effect of atmosphere during the powder production was remarkable and thermoelectric properties of sintered compound were remarkably improved by H2 reduction of starting powder. The obtained maximum figure of merit was 2.4 x 10-3/K.


2021 ◽  
Author(s):  
◽  
Michael Ng

<p>Energy consumption worldwide is constantly increasing, bringing with it the demand for low cost, environmentally friendly and efficient energy technologies. One of these promising technologies is thermoelectrics in which electric power is harvested from waste heat energy. The efficiency of a thermoelectric device is determined by the dimensionless figure of merit ZT = σS²T/k where σ is the electrical conductivity, S is the thermopower, k is the thermal conductivity, and T is the average temperature. In this thesis we investigate the use of nanostructuring, which has been known to lead to significant reduction in the lattice thermal conductivity to maximise the figure of merit.  One of the most successful bulk thermoelectric materials is Bi₂Te₃, with a ZT of unity at room temperature. Here we investigate the effects of nanostructuring on the thermoelectric properties of Bi₂Te₃. Sub-100 nm ₂Te₃ nanoparticles were successfully synthesized and the figure of merit was found to be ZT ~ 5X10⁻⁵ at room temperature. The effect of a ligand exchange treatment to replace the long chain organic ligand on the as-synthesized nanoparticles with a short chain alkyl ligand was explored. After ligand exchange treatment with hydrazine the figure of merit of sub-100 nm Bi₂Te₃ was found to increase by two fold to ZT ~ 1X10⁻⁴ at room temperature. Overall the figure of merit is low compared to other nanostructured Bi₂Te₃, this was attributed to the extremely low electrical conductivity. The thermopower and thermal conductivity were found to be ~96 μVK⁻¹ and ~0.38 Wm⁻¹ K⁻¹ at 300 K respectively, which show improvements over other nanostructured Bi₂Te₃.  Further optimisation of the figure of merit was also investigated by incorporating Cu, Ni and Co dopants. The most successful of these attempts was Co in which 14.5% Co relative to Bi was successfully incorporated into sub-100 nm Bi₂Te₃. The figure of merit of nanostructured Bi₁.₇₁Co₀.₂₉Te₁.₇₁ alloy was found to increase by 40% to a ZT ~ 1.4X10⁻⁴ at room temperature. Although overall the figure of merit is low, the effect of Co alloying and hydrazine treatment shows potential as a route to optimise the figure of merit.  A potential novel material for thermoelectrics applications is inorganicorganic perovskite single crystals. Here we report a synthetic strategy to successfully grow large millimetre scale single crystals of MAPbBr₃₋xClx, FAPbBr₃₋xClx, and MAPb₁-xSnxBr₃ (MA = methylammonium and FA = formamidinium) using inverse temperature crystallisation (ITC) in a matter of days. This is the first reported case of mixed Br/Cl single crystals with a FA cation and mixed Pb/Sn based perovskites grown using ITC. The bandgap of these single crystals was successfully tuned by altering the halide and metal site composition. It was found that single crystals of FAPbBr₃₋xClx were prone to surface degradation with increased synthesis time. This surface degradation was observed to be reversible by placing the single crystals in an antisolvent such as chloroform.  A tentative model was proposed to analyse the IV characteristics of the single crystal perovskites in order to extract mobilities and diffusion lengths. The MAPbBr₃ and MAPbBr₂.₅Cl₀.₅ single crystal mobilities were found to be between 30-390 cm² V⁻¹ s⁻¹ and 10-100 cm² V⁻¹ s⁻¹ respectively, the diffusion lengths were found to be between 2-8 μm and 1-4 μm respectively. This is an improvement over polycrystalline thin film perovskites and comparable to other single crystal perovskites. The conductance of MAPb₁-xSnxBr₃ based perovskites was found to increase by 2 orders of magnitude even with just 1% of Sn incorporated. The thermal conductivity of MAPbBr₃ single crystals was found to be ~1.12 Wm⁻¹ K⁻¹ at room temperature which is reasonable low for single crystals, however no other thermoelectric properties could be measured due to the self cleaving nature of the single crystals with decreasing temperature and the high resistivity of the material.</p>


Author(s):  
Arif ◽  
Muhammad Tahir ◽  
Hijaz Ahmad

In this paper, the enhancement in the thermoelectric properties of the organic semiconducting material, poly(3-hexylthiophene) (P3HT) by addition of carbon nanotubes (CNTs), have been studied for applications in the renewable energy. For this purpose, the thin film of P3HT: CNTs blend has been deposited on the glass substrate by drop casting technique. The blend is prepared by the ratio of 10: 0.5 mg of P3HT: CNTs at room temperature in chloroform. The thickness of P3HT: CNTs nanocomposite found by ellipsometer was 2570 nm. The Seebeck coefficient of the film is measured to be 58.18 mV/K and the electrical conductivity of nanocomposite was 254 S/cm found by four probe method. The bandgap of P3HT: CNTs nanocomposite was 1.4 eV measured by UV-Vis spectrometer. In this blend, the CNTs are used for enhancement of the thermoelectric properties of the film. The films are also characterized by different material characterization techniques. These characterizations are correlated with the thermoelectric properties of the material. The optimized value of the figure of merit (ZT) for the thin film has been achieved ZT = 0.14 for the P3HT: CNTs nanocomposites.


Author(s):  
D. Mohan Radheep

Thermoelectric properties have been investigated for Sr0.5Ca0.5Ti1-xMnxO3 (x = 0.25, 0.5, 0.75) and Sr0.75Ca0.25Ti0.75Mn0.25O3 perovskite polycrystalline samples synthesized by solid-state reaction method. Following physical properties such as thermal conductivity, electrical resistivity, Seebeck coefficient, power factor and figure of merit (ZT) were measured. The substitution of Ca2+ in Sr2+ site or/and mixed valence Mn in Ti site creates appreciable enhancement in the thermoelectric properties with an increase of ZT from 0.5 to 0.69 at room temperature. The origin for the enrichment of ZT of the investigated samples around room temperature is due to substitution induced distortion in the cubic lattice.


2011 ◽  
Vol 84-85 ◽  
pp. 671-675 ◽  
Author(s):  
Xiao Ling Qi ◽  
You Yu Fan ◽  
Ling Ke Zeng ◽  
Dong Sheng Zhu

Polycrystalline Ca3-xMgxCo4O9(x=0-0.3)ceramics were prepared by the sol–gel method combined with the ordinary pressing sintering and the thermoelectric properties were measured from room temperature to 673 K. The substitution of Mg2+for Ca2+had a greater impact on the thermoelectric properties of Ca3Co4O9. The electrical conductivity and the thermal conductivity reduced significantly with increasing Mg content, and the Seebeck coefficient increased simultaneously. The influence of Mg doping on the thermal conductivity is mainly embodied in the lattice thermal conductivity of Ca3Co4O9. The lattice thermal conductivity showed a significant change with the increase of the dopant content, while the carrier thermal conductivity had no obvious change with the doping increasing. These results indicated that the thermoelectric properties of the material could be optimized remarkably with the substitution of Mg. The figure of meritZreached 1.08×10-4K-1at 573 K for the sample of Ca2.8Mg0.2Co4O9.


2007 ◽  
Vol 1044 ◽  
Author(s):  
Kohsuke Hashimoto ◽  
Ken Kurosaki ◽  
Hiroaki Muta ◽  
Shinsuke Yamanaka

AbstractWe studied the thermoelectric properties of BaSi2 and SrSi2. The polycrystalline samples were prepared by spark plasma sintering (SPS). The electrical resistivity (ρ), Seebeck coefficient (S), and thermal conductivity (κ) were measured above room temperature. The maximum values of the dimensionless figure of merit (ZT) were 0.01 at 954 K for BaSi2 and 0.09 at 417 K for SrSi2. We tried to enhance the ZT values of BaSi2 and SrSi2 by prepareing and characterizing La-doped BaSi2 and (Ba,Sr)Si2 solid solution.


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