Synthesis, Structures, and Physical Properties of Yttrium-Doped Strontium Manganese Oxide Films

2002 ◽  
Vol 718 ◽  
Author(s):  
Andrew J. Francis ◽  
Paul A. Salvador
Keyword(s):  
Thin Films ◽  
Manganese Oxide ◽  
Alkaline Earth ◽  
Epitaxial Thin Films ◽  
X Ray Diffraction ◽  
Metal Insulator ◽  
X Ray ◽  
Synthesis Conditions ◽  
Colossal Magnetoresistive

AbstractCubic strontium manganese oxide is an end-member of the colossal magnetoresistive (CMR) family of manganese-based perovskites, Ln1-xAExMnO3. Because normal synthesis conditions lead to the 4-H hexagonal polymorph, high-pressure conditions are typically used to obtain the cubic perovskite polymorph. In this work, we describe the synthesis and structural/physical characterization of the cubic perovskite form of the high-alkaline-earth containing phases of Y1-xSrxMnO3 (x ≥ 0.7) as epitaxial thin films. Thin films of various stoichiometries were grown on single-crystal perovskite substrates SrTiO3, NdGaO3, and LaAlO3 using pulsed laser deposition. After optimizing deposition conditions, the perovskite polymorph is obtained using PLD at 800°C and 10-100 mTorr O2 for x=1, 0.9, 0.8, and 0.7, as demonstrated by x-ray diffraction. Epitaxial growth was determined to be cube-on-cube. Electrical property measurements demonstrated insulating behavior and no metal-insulator transition or magnetoresistive behavior, similar to related stable compounds.

High Throughput X-ray Diffractometer for Combinatorial Epitaxial Thin Films

2001 ◽  
Vol 700 ◽  
Author(s):  
M. Ohtani ◽  
T. Fukumura ◽  
A. Ohtomo ◽  
T. Kikuchi ◽  
K. Omote ◽  
...  
Keyword(s):  
Thin Films ◽  
High Throughput ◽  
Epitaxial Thin Films ◽  
Two Dimensional ◽  
X Ray Diffraction ◽  
Heating Method ◽  
X Ray ◽  
Spatially Resolved ◽  
Diffraction Angle

AbstractWe report on the development of a high throughput x-ray diffractometer that concurrently measures spatially resolved x-ray diffraction (XRD) spectra of epitaxial thin films integrated on a substrate. A convergent x-ray is focused into a stripe on a substrate and the diffracted beam is detected with a two-dimensional x-ray detector, so that the snapshot image represents a mapping of XRD intensity with the axes of the diffraction angle and the position in the sample. High throughput characterization of crystalline structure is carried out for a BaxSr1-xTiO3 composition-spread film on a SrTiO3 substrate. Not only the continuous spread of the composition (x), but also the continuous spread of the growth temperature (T) are given to the film by employing a special heating method. The boundary between the strained lattice and relaxed lattice is visualized by the concurrent XRD as functions of x and T in a high throughput fashion.

scholarly journals Characterization of tin dioxide nanoparticles synthesized by oxidation

Cerâmica ◽  
2015 ◽  
Vol 61 (359) ◽  
pp. 328-333 ◽  
Author(s):  
R. C. Abruzzi ◽  
B. A. Dedavid ◽  
M. J. R. Pires
Keyword(s):  
Gas Sensors ◽  
Tin Dioxide ◽  
X Ray Diffraction ◽  
X Ray ◽  
Synthesis Conditions ◽  
Tetragonal Crystal ◽  
Tetragonal Crystal Structure ◽  
Activation Efficiency ◽  
Complementary Techniques

AbstractTin dioxide (SnO2) is a promising material with great potential for applications such as gas sensors and catalysts. Nanostructures of this oxide exhibit greater activation efficiency given their larger effective surface. The present study presents results of the synthesis and characterization of tin dioxide under different conditions via oxidation of solid tin with nitric oxide. SnO2powder was characterized primarily by X-ray diffraction and scanning electron microscopy, as well as complementary techniques such as energy-dispersive X-ray spectroscopy, dynamic light scattering and Fourier transform infrared spectroscopy. The results indicated that the established synthesis conditions were suitable for obtaining rutile tin dioxide nanoparticles with a tetragonal crystal structure.

Structural and Optical Characterization of Zinc Telluride Thin Films

2013 ◽  
Vol 665 ◽  
pp. 254-262 ◽  
Author(s):  
J.R. Rathod ◽  
Haresh S. Patel ◽  
K.D. Patel ◽  
V.M. Pathak
Keyword(s):  
Thin Films ◽  
Extinction Coefficient ◽  
Nir Spectroscopy ◽  
Optical Characterization ◽  
X Ray Diffraction ◽  
X Ray ◽  
Evaporation Technique ◽  
Film Form ◽  
Znte Thin Films

Group II-VI compounds have been investigated largely in last two decades due to their interesting optoelectronic properties. ZnTe, a member of this family, possesses a bandgap around 2.26eV. This material is now a day investigated in thin film form due to its potential towards various viable applications. In this paper, the authors report their investigations on the preparation of ZnTe thin films using vacuum evaporation technique and their structural and optical characterizations. The structural characterization, carried out using an X-ray diffraction (XRD) technique shows that ZnTe used in present case possesses a cubic structure. Using the same data, the micro strain and dislocation density were evaluated and found to be around 1.465×10-3lines-m2and 1.639×1015lines/m2respecctively. The optical characterization carried out in UV-VIS-NIR region reveals the fact that band gap of ZnTe is around 2.2eV in present case. In addition to this, it was observed that the value of bandgap decreases as the thickness of films increases. The direct transitions of the carries are involved in ZnTe. Using the data of UV-VIS-NIR spectroscopy, the transmission coefficient and extinction coefficient were also calculated for ZnTe thin films. Besides, the variation of extinction coefficient with wavelength has also been discussed here.

scholarly journals Characterization of superconducting oxide thin films by X-ray diffraction.

1990 ◽  
Vol 37 (1) ◽  
pp. 141-144
Author(s):  
Tsunekazu Iwata ◽  
Akihiko Yamaji ◽  
Youichi Enomoto
Keyword(s):  
Thin Films ◽  
X Ray Diffraction ◽  
Oxide Thin Films ◽  
X Ray

Application of Aluminum Nitride Thin Film for Micromachined Ultrasonic Transducers

2005 ◽  
Vol 892 ◽  
Author(s):  
Qianghua Wang ◽  
Jianzeng Xu ◽  
Changhe Huang ◽  
Gregory W Auner
Keyword(s):  
Thin Films ◽  
Aluminum Nitride ◽  
Ultrasonic Transducers ◽  
X Ray Diffraction ◽  
Effective Coupling ◽  
Resonant Frequencies ◽  
X Ray ◽  
Coupling Factors ◽  
Sandwiched Structure

AbstractThis paper reports the fabrication and characterization of micromachined ultrasonic transducers (MUT) based on piezoelectric aluminum nitride (AlN) thin films. The MUT device is composed of an Al/AlN/Al sandwiched structure overlaid on top of a silicon (Si) diaphragm. X-ray diffraction (XRD) scan shows that highly c-axis oriented AlN (002) thin films have been grown on Al/Si(100) substrates. Electrical impedance of the MUT devices is analyzed as a function of frequency. The fundamental resonant frequencies of the devices are found in the range of 65-70 kHz, which are in approximation to the theoretical calculation. The effective coupling factors of the devices are also derived as 0.18.

scholarly journals Effects of strain on La0.67-x Prx Ca0.33 MnO3, LaMn1-x Cox O3 and LaMn1-x Nix O3 magnetite samples

DYNA ◽  
2019 ◽  
Vol 86 (211) ◽  
pp. 278-287
Author(s):  
Javier Alberto Olarte Torres ◽  
María Cristina Cifuentes Arcila ◽  
Harvey Andrés Suárez Moreno
Keyword(s):  
Compressive Strength ◽  
Magnetic Susceptibility ◽  
Sol Gel ◽  
Morphological Characterization ◽  
Electric Resistivity ◽  
The Other ◽  
X Ray Diffraction ◽  
Metal Insulator ◽  
X Ray

This paper presents the results obtained from the synthesis and morphological characterization of different magnetite samples:  La0.67-x Prx Ca0.33 MnO3.LaMn1-x Cox O3 and LaMn1-x Nix O3 at 0.13 ≤ 𝑥𝑥 ≤ 0.67 produced by a solid-state reaction mechanism and 𝐿𝐿𝐿𝐿𝑀𝑀𝑀𝑀1−𝑥𝑥(𝐶𝐶𝐶𝐶/𝑁𝑁𝑁𝑁)𝑥𝑥𝑂𝑂3 at 0.0 ≤ 𝑥𝑥 ≤ 0.5 produced by the sol-gel method. These samples were characterized using X-ray diffraction spectroscopy and by measuring electric resistivity and magnetic susceptibility which were carried out as a function of temperature. Notably, the effects of strain and compressive strength on the lattices of magnetite samples were highly dependent on the concentration of 𝑃𝑃𝑟𝑟, 𝐶𝐶𝐶𝐶, and 𝑁𝑁𝑁𝑁. Moreover, the transition temperatures of metal-insulator and ferromagnetic-paramagnetic phases also largely depend on these strength effects, e.g., at higher concentrations of 𝑃𝑃𝑟𝑟, effects of increased strain strength were observed, relocating the shifts of ferromagnetic-paramagnetic transitions to lower temperatures. On the other hand, effects of increased compressive strength were observed at higher concentrations of 𝑁𝑁𝑁𝑁 and 𝐶𝐶𝐶𝐶, relocating the shifts of ferromagnetic-paramagnetic and metal-insulator transitions to higher temperatures.

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