Application of Aluminum Nitride Thin Film for Micromachined Ultrasonic Transducers
Keyword(s):
X Ray
◽
AbstractThis paper reports the fabrication and characterization of micromachined ultrasonic transducers (MUT) based on piezoelectric aluminum nitride (AlN) thin films. The MUT device is composed of an Al/AlN/Al sandwiched structure overlaid on top of a silicon (Si) diaphragm. X-ray diffraction (XRD) scan shows that highly c-axis oriented AlN (002) thin films have been grown on Al/Si(100) substrates. Electrical impedance of the MUT devices is analyzed as a function of frequency. The fundamental resonant frequencies of the devices are found in the range of 65-70 kHz, which are in approximation to the theoretical calculation. The effective coupling factors of the devices are also derived as 0.18.
1991 ◽
Vol 9
(4)
◽
pp. 2477-2482
◽
1990 ◽
Vol 37
(1)
◽
pp. 141-144