Low Permittivity SiO2/Void Nanocomposite Films

1986 ◽  
Vol 72 ◽  
Author(s):  
Amitabh Das ◽  
R. Messier ◽  
T. R. Gururaja ◽  
L. E. Cross

AbstractA novel approach for preparing porous SiO2 thin films by sputter deposi-tion is being developed. The porosity is introduced to reduce the dielectric permittivity of the film to less than 3 for potential use in packaging high speed VLSIs. In the first approach, amorphous silicon is initially deposited to produce a columnar structure with a thickness of 25μm, followed by etching and thermal oxidation to result in closely spaced SiO2 pillars. Capping the structure by a thin film (0.1μm), silica gel layer provides the support for strip line traces. In the second approach, porous SiO2 films are prepared by reactive sputtering. The dielectric properties of the sputter deposited SiO2 films are presented.

1986 ◽  
Vol 72 ◽  
Author(s):  
L. E. Cross ◽  
T. R. Gururaja

AbstractTo accomplish the interconnect systems which will be required in the next generation of very high speed Ga:As digital ICs, it will be necessary to use strip line techniques for signal traces which must be deposited over very low permittivity dielectric substration. Materials with relative dielectric permittivities k 〈 3.0 and very low loss tangent up to microwave frequencies will be required. For ceramic systems such values are impossible to achieve in single phase monoliths, and composite approaches are required. Techniques for processing ceramic insulators which permit the introduction of controlled pore structures are discussed. The introduction of pores degrades some other desirable properties of the ceramic such as mechanical strength and thermal conductivity so that control of both scale and location of pores is desirable.Materials investigated include sol-gel processed silica films and monoliths, reactively sputtered silica, etched glass compositions and Macro-Defect-Free (MDF) cements.


2012 ◽  
Vol 2012 (1) ◽  
pp. 000326-000333
Author(s):  
John Bailey ◽  
Alexander Pfeiffenberger ◽  
Charles Ellis ◽  
Mike Palmer ◽  
Tamara Issac-Smith ◽  
...  

Use of unpackaged die in advanced integrated systems (i.e., 3-D integrated systems) calls for dense interconnection schemes with controlled impedance for high-speed signal routing and minimal impedance for efficient power distribution. We have evaluated a new material set for use in a thin-film-based redistribution layer (RDL) that consists of Asahi Glass AL-X spin-on low-k dielectric polymer and electroplated copper metallization. This technology allows fan-out and interconnection of high-speed signals and power to/from die pads on pitches sufficiently less than 100 μm directly to companion die over short distances or for transition to underlying board metallization for longer transmission distances that may require lower signal loss. This technology is demonstrated using Si wafers onto which the thin-film RDL is fabricated. We have developed and described the fabrication procedures used to construct multiple interconnected layers of AL-X / Cu, which are compatible with standard wafer level packaging (WLP) processes. We have also evaluated the performance of this technology for high-speed digital signal transmission by characterizing frequency parameters (i.e., S parameters) of single-ended and differential strip-line transmission line structures. We have optimized transmission line geometries for transmission of signals at rates greater than 25 Gbps. In addition to high-speed signal redistribution capabilities, we have characterized power redistribution capabilities of this technology. Results of the signal and power integrity measurements and simulations performed in this work are presented.


Author(s):  
Z. Liliental-Weber ◽  
C. Nelson ◽  
R. Ludeke ◽  
R. Gronsky ◽  
J. Washburn

The properties of metal/semiconductor interfaces have received considerable attention over the past few years, and the Al/GaAs system is of special interest because of its potential use in high-speed logic integrated optics, and microwave applications. For such materials a detailed knowledge of the geometric and electronic structure of the interface is fundamental to an understanding of the electrical properties of the contact. It is well known that the properties of Schottky contacts are established within a few atomic layers of the deposited metal. Therefore surface contamination can play a significant role. A method for fabricating contamination-free interfaces is absolutely necessary for reproducible properties, and molecularbeam epitaxy (MBE) offers such advantages for in-situ metal deposition under UHV conditions


Author(s):  
Denys Rozumnyi ◽  
Jan Kotera ◽  
Filip Šroubek ◽  
Jiří Matas

AbstractObjects moving at high speed along complex trajectories often appear in videos, especially videos of sports. Such objects travel a considerable distance during exposure time of a single frame, and therefore, their position in the frame is not well defined. They appear as semi-transparent streaks due to the motion blur and cannot be reliably tracked by general trackers. We propose a novel approach called Tracking by Deblatting based on the observation that motion blur is directly related to the intra-frame trajectory of an object. Blur is estimated by solving two intertwined inverse problems, blind deblurring and image matting, which we call deblatting. By postprocessing, non-causal Tracking by Deblatting estimates continuous, complete, and accurate object trajectories for the whole sequence. Tracked objects are precisely localized with higher temporal resolution than by conventional trackers. Energy minimization by dynamic programming is used to detect abrupt changes of motion, called bounces. High-order polynomials are then fitted to smooth trajectory segments between bounces. The output is a continuous trajectory function that assigns location for every real-valued time stamp from zero to the number of frames. The proposed algorithm was evaluated on a newly created dataset of videos from a high-speed camera using a novel Trajectory-IoU metric that generalizes the traditional Intersection over Union and measures the accuracy of the intra-frame trajectory. The proposed method outperforms the baselines both in recall and trajectory accuracy. Additionally, we show that from the trajectory function precise physical calculations are possible, such as radius, gravity, and sub-frame object velocity. Velocity estimation is compared to the high-speed camera measurements and radars. Results show high performance of the proposed method in terms of Trajectory-IoU, recall, and velocity estimation.


2020 ◽  
Vol 41 (2) ◽  
pp. 160-168
Author(s):  
I. A. Rastegaev ◽  
I. I. Rastegaeva ◽  
D. L. Merson ◽  
V. A. Korotkov

2021 ◽  
Vol 13 (2) ◽  
pp. 1-9
Author(s):  
Xingrui Huang ◽  
Yang Liu ◽  
Zezheng Li ◽  
Huan Guan ◽  
Qingquan Wei ◽  
...  

2013 ◽  
Vol 136 (1) ◽  
Author(s):  
Navid Shahangian ◽  
Damon Honnery ◽  
Jamil Ghojel

Interest is growing in the benefits of homogeneous charge compression ignition engines. In this paper, we investigate a novel approach to the development of a homogenous charge-like environment through the use of porous media. The primary purpose of the media is to enhance the spread as well as the evaporation process of the high pressure fuel spray to achieve charge homogenization. In this paper, we show through high speed visualizations of both cold and hot spray events, how porous media interactions can give rise to greater fuel air mixing and what role system pressure and temperature plays in further enhancing this process.


2009 ◽  
Vol 631-632 ◽  
pp. 327-331 ◽  
Author(s):  
K. Sakon ◽  
Y. Hirokawa ◽  
Yasuji Masubuchi ◽  
Shinichi Kikkawa

Sputter deposited Fe0.7Co0.3 nitride thin film had zinc blende structure. It was thermally decomposed completely back to the ferromagnetic Fe0.7Co0.3 alloy above 400°C. As-deposited nitride thin films obtained in cosputtering of (Fe0.7Co0.3)1-xAlx composite target with nitrogen sputter gas were solid solutions with zinc blende (x≤0.44) and wurtzite (x>0.5) type structure, respectively. The largest magneto resistance ratio of 0.24% was observed on the Fe0.7Co0.3 alloy particles dispersed in AlN thin film obtained by thermal decomposition of the nitride solid solution with x=0.66 at 500°C.


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