Pattern density effects in fixed abrasive polishing

2002 ◽  
Vol 732 ◽  
Author(s):  
Rajasekhar Venigalla ◽  
Laertis Economikos ◽  
S.V. Babu
Keyword(s):  
Chemical Mechanical Planarization ◽  
High Rate ◽  
Shallow Trench Isolation ◽  
Density Effects ◽  
Pattern Density ◽  
Aggressive Action ◽  
Trench Isolation ◽  
Fixed Abrasive Pad ◽  
Fixed Abrasive ◽  
Very High

AbstractWe investigated pattern density effects during chemical mechanical planarization (CMP) for shallow trench isolation (STI) applications using fixed abrasive pads to better control the fixed abrasive polishing process. We observed that the polishing characteristics of higher pattern density features are strongly dependent on the presence of lower pattern density features on the same die in the wafer. This has been attributed to the aggressive action of lower pattern density features on the fixed abrasive pad which results in a more effective activation of the pad by them. Thus even the 100% pattern density features are initially polished at a very high rate when lower density features are present.

Advances in Chemical-Mechanical Planarization

MRS Bulletin ◽  
2002 ◽  
Vol 27 (10) ◽  
pp. 743-751 ◽  
Author(s):  
Rajiv K. Singh ◽  
Rajeev Bajaj
Keyword(s):  
Surface Topography ◽  
Process Integration ◽  
Semiconductor Industry ◽  
Chemical Mechanical Planarization ◽  
Shallow Trench Isolation ◽  
Trench Isolation ◽  
Fundamental Understanding ◽  
Copper Polishing ◽  
Future Growth

AbstractThe primary aim of this issue of MRS Bulletin is to present an overview of the materials issues in chemical–mechanical planarization (CMP), also known as chemical–mechanial polishing, a process that is used in the semiconductor industry to isolate and connect individual transistors on a chip. The CMP process has been the fastest-growing semiconductor operation in the last decade, and its future growth is being fueled by the introduction of copper-based interconnects in advanced microprocessors and other devices. Articles in this issue range from providing a fundamental understanding of the CMP process to the latest advancements in the field. Topics covered in these articles include an overview of CMP, fundamental principles of slurry design, understanding wafer–pad–slurry interactions, process integration issues, the formulation of abrasive-free slurries for copper polishing, understanding surface topography issues in shallow trench isolation, and emerging applications.

Shallow Trench Isolation Chemical Mechanical Planarization: A Review

2015 ◽  
Vol 4 (11) ◽  
pp. P5029-P5039 ◽  
Author(s):  
Ramanathan Srinivasan ◽  
Pradeep VR Dandu ◽  
S. V. Babu
Keyword(s):  
Chemical Mechanical Planarization ◽  
Shallow Trench Isolation ◽  
Trench Isolation

Study of Pattern Density Effects in CMP Using Fixed Abrasive Pads

2003 ◽  
Vol 150 (12) ◽  
pp. G821 ◽  
Author(s):  
Venkata R. Gorantla ◽  
Rajasekhar Venigalla ◽  
Laertis Economikos ◽  
Daniel R. O’Connor ◽  
S. V. Babu
Keyword(s):  
Density Effects ◽  
Pattern Density ◽  
Fixed Abrasive

Layout Pattern Density and Oxide Deposition Profile Effects on Dielectrics CMP

2001 ◽  
Vol 671 ◽  
Author(s):  
Young B. Park ◽  
Joon Y. Kim ◽  
Dae W. Seo
Keyword(s):  
Chemical Mechanical Polishing ◽  
Constant Independent ◽  
Shallow Trench Isolation ◽  
Interaction Distance ◽  
Pattern Density ◽  
Systematic Exploration ◽  
Trench Isolation ◽  
Oxide Deposition ◽  
Tetra Ethyl Ortho Silicate ◽  
Density Plasma

ABSTRACTTest mask for characterizing pattern dependent variation of the remaining thickness after chemical-mechanical polishing (CMP) was designed with taking the experimentally obtained interaction distance into consideration. Measured interaction distance was constant independent of pattern variables such as pattern density and pattern shapes between line and area. And systematic exploration regarding pitch effects on remaining nitride thickness in STI (Shallow Trench Isolation) CMP was performed with comparing PETEOS (Plasma Enhanced Tetra Ethyl Ortho Silicate) and HDP (High Density Plasma) oxide. Both measured remaining nitride thickness and expected oxide pattern density from consideration of deposition profile effects showed a good correlation with respect to pitch variation for a constant layout pattern density.

N-Channel Sub-Threshold Leakage “Pipes” Generated From Micro-Twinning Near Shallow Trench Isolation Interface

2002 ◽  
Author(s):  
Erick M. Spory
Keyword(s):  
Compressive Stress ◽  
Process Parameters ◽  
Shallow Trench Isolation ◽  
Silicon Lattice ◽  
Corner Region ◽  
Twin Defect ◽  
Close Proximity ◽  
Trench Isolation ◽  
Pipe Formation ◽  
Very High

Abstract The pursuit of shorter and narrower channel transistor processes, especially those employing Shallow Trench Isolation (STI), can readily produce devices that are increasingly susceptible to the formation of sub-threshold, leakage-generating defects. Specifically, STI N-channel devices exhibiting lengths at or below 0.35 um and with widths below 1 um, are at a heightened risk of developing a channel micro-twin defect “pipe” due to the very high compressive stress within the silicon lattice. Wider, sub-0.35 um devices can also exhibit the problem if their channels are in extremely close proximity to an active/STI corner region. Modification of the relevant process parameters can significantly alleviate this stress and reduce the frequency of “pipe” formation.

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