Photoelectron Spectroscopy Measurements of the Valence Band Structures of C60 Thin Films on Single Crystal Silicon and Polycrystalline Copper

ABSTRACTWe have used photoelectron spectroscopy to study possible modifications in the electronic valence band structures of thin films of C60 due to their deposition on single crystal silicon and polycrystalline copper. The C60 thin films were deposited by thermal evaporation under high vacuum and further characterized by using Raman spectroscopy. We observe significant differences in the valence band structures of C60 thin films deposited on these substrates and attribute them to interactions at the interface.

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Tensile Testing of Single-Crystal Silicon Thin Films at 600 oC Using Infrared Radiation Heating

Sensors and Materials ◽

10.18494/sam.2010.619 ◽

2010 ◽

pp. 1

Keyword(s):

Thin Films ◽

Single Crystal ◽

Infrared Radiation ◽

Tensile Testing ◽

Single Crystal Silicon ◽

Radiation Heating ◽

Crystal Silicon ◽

Silicon Thin Films

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Maximizing helium-neon laser optical absorption with micromachined single-crystal silicon wafer surfaces coated with antireflective thin films

Proceedings of the IEEE 1992 National Aerospace and Electronics Conference@m_NAECON 1992 ◽

10.1109/naecon.1992.220667 ◽

2003 ◽

Author(s):

E.S. Kolesar ◽

S.G. Uyehata

Keyword(s):

Thin Films ◽

Optical Absorption ◽

Single Crystal ◽

Silicon Wafer ◽

Single Crystal Silicon ◽

Crystal Silicon ◽

Neon Laser ◽

Helium Neon Laser ◽

Helium Neon ◽

Wafer Surfaces

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Study of high-temperature Smart Cut™: Application to thin films of single crystal silicon and silicon-on-sapphire films

EUROSOI-ULIS 2015: 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon ◽

10.1109/ulis.2015.7063800 ◽

2015 ◽

Author(s):

Raphael Meyer ◽

Oleg Kononchuck ◽

Hubert Moriceau ◽

Mustapha Lemiti ◽

Michel Bruel

Keyword(s):

Thin Films ◽

High Temperature ◽

Single Crystal ◽

Single Crystal Silicon ◽

Crystal Silicon

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The Use of Energy Dispersive Diffractometry to Measure the Thickness of Metal and Glass Thin Films

Advances in X-ray Analysis ◽

10.1154/s0376030800009988 ◽

1981 ◽

Vol 25 ◽

pp. 365-371

Author(s):

Glen A. Stone

Keyword(s):

Thin Films ◽

Single Crystal ◽

Single Crystal Silicon ◽

Substrate Material ◽

Silicon Wafers ◽

Energy Dispersive ◽

Crystal Silicon ◽

X Ray ◽

Phosphosilicate Glass ◽

Film Substrate

This paper presents a new method to measure the thickness of very thin films on a substrate material using energy dispersive x-ray diffractometry. The method can be used for many film-substrate combinations. The specific application to be presented is the measurement of phosphosilicate glass films on single crystal silicon wafers.

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A Study on the Damage Layer Removal of Single-Crystal Silicon Wafer After Atmospheric-Pressure Plasma Etching

Journal of Micro and Nano-Manufacturing ◽

10.1115/1.4046377 ◽

2020 ◽

Vol 8 (2) ◽

Author(s):

Weijia Guo ◽

Senthil Kumar Anantharajan ◽

Xinquan Zhang ◽

Hui Deng

Keyword(s):

Single Crystal ◽

Plasma Etching ◽

Photoelectron Spectroscopy ◽

Atmospheric Pressure ◽

Single Crystal Silicon ◽

Atmospheric Pressure Plasma ◽

Etching Process ◽

Wafer Surface ◽

Etching Time ◽

Crystal Silicon

Abstract In this study, atmospheric-pressure (AP) plasma generated using He/O2/CF4 mixture as feed gas was used to etch the single-crystal silicon (100) wafer and the characteristics of the etched surface were investigated. The wafer morphology and surface elemental composition were analyzed using scanning electron microscope (SEM) and X-ray photoelectron spectroscopy (XPS), respectively. The XPS results reveal that the fluorine element will be deposited on the wafer surface during the etching process when oxygen was not introduced as the feed gas. By detecting the energy and intensity of emitted particles, optical emission spectroscopy (OES) is used to identify the radicals in plasma. The fluorocarbon radicals generated during CF4 plasma ionization can form carbon fluoride polymer, which is considered as one factor to suppress the etching process. The roughness was measured to be changed with the increase in the etching time. The surface appears to be rougher at first when the plasma etching occurred on the subsurface damaged (SSD) layer, and the subsurface cracks would show on the surface after a short-time etching. After the damaged layer was fully removed, etching resulted in the formation of square-opening etching pits. During extended etching, the individual etching pits grew up and coalesced with one another; this coalescence provided an improved surface roughness. This study explains the AP plasma etching mechanism, and the formation of anisotropic surface etching pits at a microscale level for promoting the micromachining process.

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Temperature Dependence of the Electrical Resistivity of Polymerized C60 Thin Films

MRS Proceedings ◽

10.1557/proc-734-b9.30 ◽

2002 ◽

Vol 734 ◽

Cited By ~ 2

Author(s):

R. Govinthasamy ◽

J. H. Rhee ◽

S. C Sharma

Keyword(s):

Thin Films ◽

Electrical Resistivity ◽

Temperature Dependence ◽

Uv Irradiation ◽

High Vacuum ◽

Single Crystal Silicon ◽

Laser Raman Spectroscopy ◽

Crystal Silicon ◽

Laser Raman ◽

Electrical Resistivities

ABSTRACTHighly conducting thin films of C60 were deposited by thermal evaporation in high vacuum on single crystal silicon substrates. The microstructure of the films was characterized by using Atomic Force Microscopy, and laser Raman spectroscopy. The films were polymerized by uv irradiation. The dc electrical resistivities of the as-deposited and uv-polymerized films were measured as functions of temperature between 295 and 17K by the four-probe technique. We present results on the effects of uv-irradiation on the surface microstructure and the temperature dependence of the electrical resistivity of these films.

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