Annealing Kinetics during Rapid and Classical Thermal Processing of Laser and Implantation Induced defects in Silicon

AbstractThe annealing behaviour of electrically-active defects in-duced in virgin n-type silicon by-Nd-Yag Laser (1.6 J cm−2,0.53 μm) irradiation has been investigated with Deep Level Transient Spectroscopy (DLTS). The observed defects : E(0.32 eV), E(0.45 eV) and E(0.53 eV) are characteristic of laser treated silicon, and have been reported by a number of workers. Using a rapid thermal furnace at 600°C for durations between 10 and 60s, we have observed a linear decrease in the concentration of these defects, and for times T > 60s, they are seen to disappear. A similar result was obtained in studies carried out on both vir-gin and implanted p-type silicon. This is in sharp contrast to the classical furnace annealing which requires much longer du-rations (20–30 min) at the same temperature (600 °C) in order to obtain the same results. A study of the annealing kinetics for the E(0.32 eV ;σn = 8 × 10−16 cm−2) level between 500 and 650°C in steps of 50°C for the two processes confirms this tendency for all processing temperatures, and shows a difference in ac-tivation energy of practically the same order of magnitude as the ionization energy of the defect (i.e. = 0.31 eV). Induced defects in high temperature > 1000°C in rapid thermal processed (RTA) n-type Si, also annealed out after a further 600°650 °C, 60 s RTA treatment. These results suggest that defect annealing is not a purely thermal mechanism, and lend strong support to the idea of an ionization induced enhancement.

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Partial annealing of defects in boron-implanted p-type silicon by hydrogen implantation

MRS Proceedings ◽

10.1557/proc-719-f8.6 ◽

2002 ◽

Vol 719 ◽

Cited By ~ 1

Author(s):

Yutaka Tokuda ◽

Hiroyuki Iwata

Keyword(s):

Point Defects ◽

Deep Level Transient Spectroscopy ◽

Deep Level ◽

Type Silicon ◽

Boron Implantation ◽

Hydrogen Implantation ◽

Transient Spectroscopy ◽

P Type ◽

Induced Defects ◽

Partial Annealing

AbstractHydrogen implantation has been used to anneal defects produced in p-type silicon by boron implantation. Boron implantation is performed with an energy of 300 keV to a dose of 1×109 cm-2. Deep level transient spectroscopy measurements show the production of four hole traps (Ev + 0.21, 0.35, 0.50, 0.55 eV) by boron implantation. Subsequent hydrogen implantation is performed with energies of 60, 90, 120 and 150 keV to a dose of 2×1010 cm-2. Among four traps produced by boron implantation, the most significant effect of hydrogen implantation is observed on one trap (Ev + 0.50 eV). A 62% decrease in concentration is caused for this trap by hydrogen implantation with energies of 120 and 150 keV. This partial annealing is ascribed to the reaction of boron-implantation-induced defects with point defects produced by hydrogen implantation.

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Deep Levels in 4H Silicon Carbide Epilayers Induced by Neutron-Irradiation up to 1016 n/cm2

MRS Proceedings ◽

10.1557/proc-0911-b06-01 ◽

2006 ◽

Vol 911 ◽

Cited By ~ 4

Author(s):

Anna Cavallini ◽

Antonio Castaldini ◽

Filippo Nava ◽

Paolo Errani ◽

Vladimir Cindro

Keyword(s):

Deep Level ◽

Collection Efficiency ◽

Deep Levels ◽

Charge Collection ◽

Charge Collection Efficiency ◽

Temperature Range ◽

Order Of Magnitude ◽

Irradiation Level ◽

Transient Spectroscopy ◽

Induced Defects

AbstractWe investigated the electronic levels of defects introduced in 4H-SiC α-particle detectors by irradiation with 1 MeV neutrons up to a fluence equal to 8x1015 n/cm2. As well, we investigated their effect on the detector radiation hardness. This study was carried out by deep level transient spectroscopy (DLTS) and photo-induced current transient spectroscopy (PICTS). As the irradiation level approaches fluences in the order of 1015 n/cm2, the material behaves as highly resistive due to a very great compensation effect but the diodes are still able to detect with a acceptably good charge collection efficiency (CCE) equal to 80%. By further increasing fluence, CCE decreases reaching the value of ≈ 20% at fluence of 8x1015 n/cm2.The dominant peaks in the PICTS spectra occur in the temperature range [400, 700] K. Enthalpy, capture cross-section and order of magnitude of the density of such deep levels were calculated. In the above said temperature range the deep levels associated to the radiation induced defects play the key role in the degradation of the CCE. Two deep levels at Et = 1.18 eV and Et = 1.50 eV are likely to be responsible of such dramatic decrease of the charge collection efficiency. These levels were reasonably associated to an elementary defect involving a carbon vacancy and to a defect complex involving a carbon and a silicon vacancy, respectively.

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Deep level transient spectroscopy on proton-irradiated Fe-contaminated p-type silicon

physica status solidi (c) ◽

10.1002/pssc.201200163 ◽

2012 ◽

Vol 9 (10-11) ◽

pp. 1992-1995 ◽

Cited By ~ 2

Author(s):

C. K. Tang ◽

L. Vines ◽

B. G. Svensson ◽

E. V. Monakhov

Keyword(s):

Deep Level Transient Spectroscopy ◽

Deep Level ◽

Type Silicon ◽

Transient Spectroscopy ◽

P Type

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Ion Implantation-Induced Defects and the Influence of Titanium Silicidation

MRS Proceedings ◽

10.1557/proc-510-275 ◽

1998 ◽

Vol 510 ◽

Author(s):

D.Z. Chi ◽

S. Ashok ◽

D. Theodore

Keyword(s):

Ion Implantation ◽

Thermal Processing ◽

Thermal Evolution ◽

Deep Level ◽

Rapid Thermal Processing ◽

Current Voltage ◽

Transient Spectroscopy ◽

Thermal Signature ◽

P Type ◽

Induced Defects

AbstractThermal evolution of ion implantation-induced defects and the influence of concurrent titanium silicidation in pre-amorphized p-type Si (implanted with 25 KeV, 1016 cm2Si+) under rapid thermal processing (RTP) have been investigated. Presence of implantation-induced electrically active defects has been confirmed by current-voltage (IV) and deep level transient spectroscopy (DLTS) measurements. DLTS characterization results show that the evolution of electrically active defects in the Si implanted samples under RTP depend critically on the RTP temperature: Hole traps HI (0.33 eV) and H4 (0.47 eV) appear after the highest temperature (950 °C) anneal, while a single trap H3 (0.26 eV) shows up at lower anneal temperatures (≤ 900 °C). The thermal signature of H4 defect is very similar to that of the iron interstitial while those of HI and H3 levels appear to originate from some interstitial-related defects, possibly complexes. A most interesting finding is that the above interstitial related defects can be eliminated completely with Ti silicidation, apparently a result of vacancy injection. However the silicidation process itself introduces a new H2 (0.30 eV) level, albeit at much lower concentration. This same H2 level is also seen in unimplanted samples under RTP. The paper will present details of defect evolution under various conditions of RTP for samples with and without the self-implantation and silicidation.

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In Situ Deep Level Transient Spectroscopy of Defect Evolution in Silicon Following Ion Implantation at 80 K

MRS Proceedings ◽

10.1557/proc-532-73 ◽

1998 ◽

Vol 532 ◽

Cited By ~ 4

Author(s):

C. R. Cho ◽

R. A. Brown ◽

O. Kononchuk ◽

N. Yarykin ◽

G. Rozgonyi ◽

...

Keyword(s):

Deep Level Transient Spectroscopy ◽

Room Temperature ◽

Deep Level ◽

Temperature Range ◽

Type Silicon ◽

Defect Annealing ◽

Interstitial Defects ◽

Transient Spectroscopy ◽

Dlts Spectra

ABSTRACTThe evolution of defects in Czochralski and epitaxial p- and n-type silicon wafers following irradiation with He. Si or Ge ions at 80 K has been investigated by in situ deep level transient spectroscopy (DLTS). Defect annealing and formation reactions have been observed over the temperature range 80–350 K. In p-type silicon, new species-dependent levels are observed immediately after implantation, but these levels anneal out at or below room temperature. The wellknown divacancy and interstitial defects, usually reported after room temperature implantation, are revealed in the DLTS spectra only upon annealing at 160–200 K. In n-type silicon, vacancy-oxygen pairs are observed immediately after implantation. However, vacancy-related defects continue to form over a broad temperature range in samples implanted with Si or Ge. These observations are consistent with a model whereby vacancies and interstitials are released from defect clusters at temperatures >200 K to form divacancies and other defect pairs which are stable at room temperature.

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Process-Induced Defects in High-Purity GaAs

MRS Proceedings ◽

10.1557/proc-14-283 ◽

1982 ◽

Vol 14 ◽

Cited By ~ 1

Author(s):

P. H. Campbell ◽

O. Aina ◽

B. J. Baliga ◽

R. Ehle

Keyword(s):

High Temperature ◽

High Purity ◽

Deep Level Transient Spectroscopy ◽

Deep Level ◽

Deep Levels ◽

Schottky Contacts ◽

High Temperature Annealing ◽

Order Of Magnitude ◽

Transient Spectroscopy ◽

Induced Defects

ABSTRACTHigh temperature annealing of Si 3 N4 and SiO2 capped high purity LPE GaAs is shown to result in a reduction in the surface carrier concentration by about an order of magnitude. Au Schottky contacts made on the annealed samples were found to have severely degraded breakdown characteristics. Using deep level transient spectroscopy, deep levels at EC–.58eV, EC–.785eV were detected in the SiO2, capped samples and EC–.62eV, EC–.728eV in the Si3N4 capped Samples while none was detected in the unannealed samples.The electrical degradations are explained in terms of compensation mechanisns and depletion layer recombination-generation currents due to the deep levels.

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