Towards Ferroelectric Field Effect Transistors in 4H-Silicon Carbide

ABSTRACTWe report on the integration of ferroelectric Pb(Zr,Ti)O3 (PZT) thin films on 4H-silicon carbide and their electrical properties. The structures of metal-ferroelectric-(insulator)-semiconductor MF(I)S and metal-ferroelectric-metal-insulator-semiconductor MFMIS have been fabricated and characterized. The MFMIS structures of Au/PZT/Pt/Ti/SiO2/SiC have shown fully saturated P-E hysteresis loops with remnant polarization Pr =14.2μC/cm2 and coercive field Ec = 58.9 kV/cm. The MFIS structures exhibited stable capacitance-voltage C-V loops with low conductance (<0.1 mS/cm2, tan d ∼ 0.0007 at 12 V, 400kHz) and memory window as wide as 10 V, when a 5 nm-thick Al2O3 was used as a high bandgap (Eg ∼ 9eV) barrier buffer layer between PZT (Eg ∼ 3.5eV) and SiC (Eg ∼ 3.2eV). Both structures on n- and p- SiC have shown electrical properties promising for the application to the gate stacks for the SiC field-effect transistors (FETs) and the design and process issues on different types of the metal-ferroelectric-silicon carbide field-effect transistors (FETs) have also been proposed.

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Modelling of Dynamic Properties of Silicon Carbide Junction Field-Effect Transistors (JFETs)

Energies ◽

10.3390/en13010187 ◽

2020 ◽

Vol 13 (1) ◽

pp. 187 ◽

Cited By ~ 1

Author(s):

Kamil Bargieł ◽

Damian Bisewski ◽

Janusz Zarębski

Keyword(s):

Silicon Carbide ◽

Integrated Circuit ◽

Field Effect ◽

Field Effect Transistors ◽

Dynamic Properties ◽

Modified Model ◽

Spice Model ◽

Capacitance Voltage ◽

Effect Transistor ◽

Switching Characteristics

The paper deals with the problem of modelling and analyzing the dynamic properties of a Junction Field Effect Transistor (JFET) made of silicon carbide. An examination of the usefulness of the built-in JFET Simulation Program with Integrated Circuit Emphasis (SPICE) model was performed. A modified model of silicon carbide JFET was proposed to increase modelling accuracy. An evaluation of the accuracy of the modified model was performed by comparison of the measured and calculated capacitance–voltage characteristics as well as the switching characteristics of JFETs.

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Electrical properties of metal–HfO2–silicon system measured from metal–insulator–semiconductor capacitors and metal–insulator–semiconductor field–effect transistors using HfO2 gate dielectric

Microelectronics Reliability ◽

10.1016/j.microrel.2004.11.016 ◽

2005 ◽

Vol 45 (5-6) ◽

pp. 961-964 ◽

Cited By ~ 14

Author(s):

Fu-Chien Chiu ◽

Shun-An Lin ◽

Joseph Ya-min Lee

Keyword(s):

Electrical Properties ◽

Field Effect ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Silicon System

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Temperature Dependence Of The Electrical Properties Of Epitaxial Caf2 Layers On Si(111) Summary Abstract

MRS Proceedings ◽

10.1557/proc-91-371 ◽

1991 ◽

Vol 91 ◽

Author(s):

R.W. Fathauer ◽

L.J. Schowalter

Keyword(s):

Electrical Properties ◽

Field Effect ◽

Molecular Beam ◽

Field Effect Transistors ◽

Silicon On Insulator ◽

Gate Insulator ◽

Crystalline Perfection ◽

Metal Insulator ◽

Silicon On Insulator Technology ◽

High Degree

CaF2 is an insulator with a number of attractive properties for epitaxial growth on Si1 Epitaxial CaF2 layers have been grown on Si(111) by Molecular Beam Epitaxy and are found to have smooth surfaces and a high degree of crystalline perfection.1 For applications such as a gate insulator in metal-insulator-semiconductor field-effect transistors or in silicon-on-insulator technology, the electrical properties of these layers are also critical.

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