High-Quality AlGaN/GaN HFET Structures Grown by MOCVD Using Intermediate High Temperature AlGaN/GaN Superlattices

ABSTRACTWe report on device quality Al0.28Ga0.72N/GaN heterostructures growth by low-pressure metalorganic chemical vapor deposition (LP-MOCVD) using intermediate AlxGa1-xN/GaN superlattices (SL) with x<0.15. High-quality Al0.28Ga0.72N/GaN heterostructures have been confirmed with HRXRD analysis by measurement of mosaic twist and tilt in growth films, SEM with selective etching and Van der Pauw Hall measurements. The edge and threading dislocations were efficiently filtered by the AlGaN/GaN SL resulting in further reduction dislocation densities at the channel. Additionally, the superlattice served to improve the planarity of the channel heterointerface as evidenced by x-ray and AFM analysis. The increase of 2-DEG mobility from ∼1187 cm2/V s to ∼1443 cm2/V s was obtained at the carrier density of 1.0 to 1.2×1013 cm−2 on heterostructures with intermediate AlGaN/GaN SL grown on sapphire.

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Material Properties of GaN Films Grown on SiC/SOI Substrate

Materials Science Forum ◽

10.4028/www.scientific.net/msf.600-603.1313 ◽

2008 ◽

Vol 600-603 ◽

pp. 1313-1316

Author(s):

Zhe Chuan Feng ◽

C. Tran ◽

Ian T. Ferguson ◽

J.H. Zhao

Keyword(s):

Vapor Deposition ◽

Material Properties ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

X Ray Diffraction ◽

High Quality ◽

X Ray ◽

Metalorganic Chemical ◽

Deposition Technology

Material properties of GaN thin films grown on 3C-SiC/semiconductor-on-insulator (SOI) substrate, by metalorganic chemical vapor deposition technology, are studied by X-ray diffraction, photoluminescence and Raman scattering, with data indicating the high quality of GaN films. Our results have shown that SiC/SOI structures obtained by carbonization have the potential to serve as useful substrates for GaN growth.

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High Quality GaAs Mis Diodes With Very Low Surface State Density

MRS Proceedings ◽

10.1557/proc-209-703 ◽

1990 ◽

Vol 209 ◽

Author(s):

Yoshihisa Fujisaki ◽

Sumiko Sakai ◽

Saburo Ataka ◽

Kenji Shibata

Keyword(s):

Chemical Vapor Deposition ◽

Density Of States ◽

Vapor Deposition ◽

Photoelectron Spectroscopy ◽

Chemical Vapor ◽

State Density ◽

High Quality ◽

Metal Insulator ◽

X Ray ◽

Mis Devices

ABSTRACTHigh quality GaAs/SiO2 MIS( Metal Insulator Semiconductor ) diodes were fabricated using (NH4)2S treatment and photo-assisted CVD( Chemical Vapor Deposition ). The density of states at the GaAs and SiO2 interface is the order of 1011 cm-2eV-1 throughout the forbidden energy range, which is smaller by the order of two than that of the MIS devices made by the conventional CVD process. The mechanism attributable to the interface improvement was investigated through XPS( X-ray Photoelectron Spectroscopy ) analyses.

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High‐quality GaInAsP/InP heterostructures grown by low‐pressure metalorganic chemical vapor deposition on silicon substrates

Applied Physics Letters ◽

10.1063/1.99521 ◽

1988 ◽

Vol 52 (3) ◽

pp. 209-211 ◽

Cited By ~ 28

Author(s):

M. Razeghi ◽

F. Omnes ◽

M. Defour ◽

Ph. Maurel

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Low Pressure ◽

Silicon Substrates ◽

High Quality ◽

Metalorganic Chemical

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Real-Time Composition And Thickness Control Techniques In A Metalorganic Chemical Vapor Deposition Process

MRS Proceedings ◽

10.1557/proc-406-133 ◽

1995 ◽

Vol 406 ◽

Author(s):

M. S. Gaffneyt ◽

C. M. Reavesl ◽

A. L Holmes ◽

R. S. Smith ◽

S. P. DenBaars

Keyword(s):

Chemical Vapor Deposition ◽

Real Time ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Normal Operation ◽

Growth Monitoring ◽

X Ray Diffraction ◽

X Ray ◽

Metalorganic Chemical

AbstractMetalorganic chemical vapor deposition (MOCVD) is a process used to manufacture electronic and optoelectronic devices that has traditionally lacked real-time growth monitoring and control. We have developed control strategies that incorporate monitors as real-time control sensors to improve MOCVD growth. An analog control system with an ultrasonic concentration monitor was used to reject bubbler concentration disturbances which exist under normal operation, during the growth of a four-period GaInAs/InP superlattice. Using X-ray diffraction, it was determined that the normally occurring concentration variations led to a wider GaInAs peak in the uncompensated growths as compared to the compensated growths, indicating that closed loop control improved GaInAs composition regulation. In further analysis of the X-ray diffraction curves, superlattice peaks were used as a measure of high crystalline quality. The compensated curve clearly displayed eight orders of satellite peaks, whereas the uncompensated curve shows little evidence of satellite peaks.

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Growth of Epitaxial BaTiO3 Thin Films at 600°C by Metalorganic Chemical Vapor Deposition

MRS Proceedings ◽

10.1557/proc-361-355 ◽

1994 ◽

Vol 361 ◽

Cited By ~ 6

Author(s):

D.L. Kaiser ◽

M.D. Vaudin ◽

L.D. Rotter ◽

Z.L. Wang ◽

J.P. Cline ◽

...

Keyword(s):

Thin Films ◽

Chemical Vapor Deposition ◽

Electron Diffraction ◽

Harmonic Generation ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Second Harmonic ◽

Chemical Vapor ◽

X Ray ◽

Metalorganic Chemical

ABSTRACTMetalorganic chemical vapor deposition (MOCVD) was used to deposit epitaxial BaTiO3 thin films on (100) MgO substrates at 600°C. The metalorganic precursors employed in the deposition experiments were hydrated Ba(thd)2 (thd = C11H19O2) and titanium isopropoxide. The films were analyzed by means of transmittance spectroscopy, wavelength dispersive x-ray spectrometry, secondary ion mass spectrometry depth profiling, x-ray diffraction, high resolution transmission electron microscopy, selected area electron diffraction, nanoscale energy dispersive x-ray spectrometry and second harmonic generation measurements. There was no evidence for interdiffusion between the film and substrate. The x-ray and electron diffraction studies showed that the films were oriented with the a-axis normal to the substrate surface, whereas second harmonic generation measurements showed that the films had some c-axis character.

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X-ray diffraction analysis of InGaP/GaAs heterointerfaces grown by metalorganic chemical vapor deposition

Journal of Applied Physics ◽

10.1063/1.364297 ◽

1997 ◽

Vol 81 (6) ◽

pp. 2607-2610 ◽

Cited By ~ 10

Author(s):

Takumi Nittono ◽

Fumiaki Hyuga

Keyword(s):

Chemical Vapor Deposition ◽

Diffraction Analysis ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

X Ray Diffraction ◽

X Ray ◽

Metalorganic Chemical

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ANTIPHASE DOMAIN FREE EPITAXIAL GROWTH OF GaAs ON (100)Ge

MRS Proceedings ◽

10.1557/proc-56-79 ◽

1985 ◽

Vol 56 ◽

Cited By ~ 1

Author(s):

Y. Shinoda ◽

Y. Ohmachi

Keyword(s):

Vapor Deposition ◽

Atmospheric Pressure ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Antiphase Domain ◽

Epitaxial Layers ◽

High Quality ◽

Thermal Etching ◽

Domain Structures ◽

Homoepitaxial Layers

AbstractHigh-quality single domain GaAs epitaxial layers were successfully grown on (100)Ge substrates. Growth was carried out using conventional metalorganic chemical vapor deposition at atmospheric pressure. Antiphase domain free GaAs epitaxial layers were obtained by thermal etching of the Ge surface just prior to growth. Mosaic surface morphology and antiphase boundaries characteristic of domain structures were completely absent in epi-layers following thermal etching. Photoluminescence revealed that domain free epi-layers exhibited characteristics comparable to those of GaAs homoepitaxial layers.

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