Photoinduced Topotaxial Exchange Reactions in Cadmium Sulphide Thin Films

1986 ◽  
Vol 75 ◽  
Author(s):  
T. J. Cumberbatch ◽  
P. E. Barden ◽  
J. Knightley
Keyword(s):  
Thin Films ◽  
Ion Exchange ◽  
Laser Beam ◽  
Cadmium Sulphide ◽  
Frequency Range ◽  
Exchange Reactions ◽  
Organic Solution ◽  
Cuprous Salt ◽  
Visible Frequency ◽  
Cuprous Sulphide

AbstractA CO2 laser, operating at 10.6μm, has been used to promote the growth of topotaxial layers of the chalcocite phase of cuprous sulphide in cadmium sulphide thin films immersed in an organic solution of a cuprous salt at ambient temperature. Cuprous sulphide growth is initiated by the laser beam which passes through the liquid and raises the surface temperature of the CdS allowing ion exchange to take place without changing the surface topography. An investigation into different combinations of organic solvents and cuprous/cupric salts has revealed that cuprous iodide in acetonitrile or propionitrile yields the fastest growth rates. The results are compared with those obtained from junctions fabricated using lasers operating in the visible frequency range.

Kinetics of Ion-Exchange Reactions in Hybrid Organic–Inorganic Perovskite Thin Films Studied by In Situ Real-Time X-ray Scattering

2018 ◽  
Vol 9 (23) ◽  
pp. 6750-6754 ◽  
Author(s):  
Alessandro Greco ◽  
Alexander Hinderhofer ◽  
M. Ibrahim Dar ◽  
Neha Arora ◽  
Jan Hagenlocher ◽  
...  
Keyword(s):  
Thin Films ◽  
Ion Exchange ◽  
Real Time ◽  
Exchange Reactions ◽  
Inorganic Perovskite ◽  
X Ray ◽  
X Ray Scattering ◽  
Kinetics Of ◽  
Kinetics Of Ion Exchange

ChemInform Abstract: CdSe Thin Films.: Chemical Deposition Using N,N-Dimethylselenourea and Ion Exchange Reactions to Modify Electrical Conductivity.

ChemInform ◽  
2010 ◽  
Vol 25 (6) ◽  
pp. no-no
Author(s):  
M. T. S. NAIR ◽  
P. K. NAIR ◽  
H. M. K. K. PATHIRANA ◽  
R. A. ZINGARO ◽  
E. A. MEYERS
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Ion Exchange ◽  
Chemical Deposition ◽  
Exchange Reactions

AC CONDUCTIVITY AND DIELECTRIC PROPERTIES OF PULSED LASER DEPOSITED CdS THIN FILMS

2013 ◽  
Vol 27 (27) ◽  
pp. 1350140
Author(s):  
N. M. KHUSAYFAN
Keyword(s):  
Thin Films ◽  
Ac Conductivity ◽  
Pulsed Laser ◽  
Cadmium Sulphide ◽  
Laser Deposition ◽  
Deposition Technique ◽  
Frequency Range ◽  
Ac Electrical Conductivity ◽  
Cds Thin Films ◽  
Ac Conduction

Cadmium Sulphide (CdS) thin films with different thicknesses were prepared by pulsed laser deposition technique using Nd:YAG laser with wavelength 1064 nm. AC electrical conductivity was studied in the frequency range 100–1000 KHz as a function of temperature. AC conductivity increased with increasing the frequency. The values of the activation energy of the AC conduction were calculated for CdS thin films of different thicknesses at various frequencies. The dielectric constant and dielectric loss were investigated as a function of temperature at different frequencies.

CdSe Thin Films: Chemical Deposition Using N,N‐Dimethylselenourea and Ion Exchange Reactions to Modify Electrical Conductivity

1993 ◽  
Vol 140 (10) ◽  
pp. 2987-2994 ◽  
Author(s):  
M. T. S. Nair ◽  
P. K. Nair ◽  
H. M. K. K. Pathirana ◽  
Ralph A. Zingaro ◽  
Edward A. Meyers
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Ion Exchange ◽  
Chemical Deposition ◽  
Exchange Reactions

Growth of nanocrystalline CuIn3Se5 (OVC) thin films by ion exchange reactions at room temperature and their characterization as photo-absorbing layers

2009 ◽  
Vol 255 (18) ◽  
pp. 8158-8163 ◽  
Author(s):  
Ramphal Sharma ◽  
Anil Ghule ◽  
Vidya Taur ◽  
R. Joshi ◽  
Rajaram Mane ◽  
...  
Keyword(s):  
Thin Films ◽  
Ion Exchange ◽  
Room Temperature ◽  
Exchange Reactions

Incubation of PbSe Thin Films in a Tin(II) Salt Aqueous Solution: Modification and Ion-Exchange Reactions

2015 ◽  
Vol 31 (8) ◽  
pp. 790-797 ◽  
Author(s):  
Zinaida I. Smirnova ◽  
Larisa N. Maskaeva ◽  
Vyacheslav F. Markov ◽  
Vladimir I. Voronin ◽  
Mikhail V. Kuznetsov
Keyword(s):  
Thin Films ◽  
Aqueous Solution ◽  
Ion Exchange ◽  
Exchange Reactions

Organic Solution Deposition of Copper Seed Layers onto Barrier Metals

2000 ◽  
Vol 612 ◽  
Author(s):  
H. Gu ◽  
R. Fang ◽  
T. J. O'Keefe ◽  
M. J. O'Keefe ◽  
W.-S. Shih ◽  
...  
Keyword(s):  
Thin Films ◽  
Seed Layer ◽  
Copper Deposition ◽  
Copper Films ◽  
Exchange Reactions ◽  
Organic Solution ◽  
Spontaneous Deposition ◽  
Electroless Copper ◽  
Barrier Metal ◽  
Seed Layers

AbstractSpontaneous deposition of copper seed layers from metal bearing organic based solutions onto sputter deposited titanium, titanium nitride, and tantalum diffusion barrier thin films has been demonstrated. Based on electrochemically driven cementation exchange reactions, the process was used to produce adherent, selectively deposited copper metal particulate films on blanket and patterned barrier metal thin films on silicon substrates. The organic solution deposited copper films were capable of acting as seed layers for subsequent electrolytic and electroless copper deposition processes using standard plating baths. Electroless and electrolytic copper films from 0.1µm to 1.0µm thick were produced on a variety of samples on which the organic solution copper acted as the initial catalytic seed layer. The feasibility of using organic solution deposited palladium as a seed layer followed by electroless copper deposition has also been demonstrated. In addition, experiments conducted on patterned barrier metal samples with exposed areas of dielectric such as polyimide indicated that no organic solution copper or palladium deposition occurred on the insulating materials.

scholarly journals Photothermal, Photoelectric, and Photothermoelectric Effects in Bi-Sb Thin Films in the Terahertz Frequency Range at Room Temperature

Photonics ◽  
2021 ◽  
Vol 8 (3) ◽  
pp. 76
Author(s):  
Mikhail K. Khodzitsky ◽  
Petr S. Demchenko ◽  
Dmitry V. Zykov ◽  
Anton D. Zaitsev ◽  
Elena S. Makarova ◽  
...  
Keyword(s):  
Thin Films ◽  
Terahertz Radiation ◽  
Room Temperature ◽  
Voltage Drop ◽  
Radiation Detection ◽  
Radiation Detectors ◽  
Thz Radiation ◽  
Terahertz Frequency ◽  
Frequency Range ◽  
Terahertz Frequency Range

The terahertz frequency range is promising for solving various practically important problems. However, for the terahertz technology development, there is still a problem with the lack of affordable and effective terahertz devices. One of the main tasks is to search for new materials with high sensitivity to terahertz radiation at room temperature. Bi1−xSbx thin films with various Sb concentrations seem to be suitable for such conditions. In this paper, the terahertz radiation influence onto the properties of thermoelectric Bi1−xSbx 200 nm films was investigated for the first time. The films were obtained by means of thermal evaporation in vacuum. They were affected by terahertz radiation at the frequency of 0.14 terahertz (THz) in the presence of thermal gradient, electric field or without these influences. The temporal dependencies of photoconductivity, temperature difference and voltage drop were measured. The obtained data demonstrate the possibility for practical use of Bi1−xSbx thin films for THz radiation detection. The results of our work promote the usage of these thermoelectric materials, as well as THz radiation detectors based on them, in various areas of modern THz photonics.

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