Plasma Enhanced Chemical Vapor Deposition of Porous Organosilicate Glass ILD Films With k ≤ 2.4.

AbstractWe report on our work to develop a process for depositing nanoporous organosilicate (OSG) films via plasma enhanced chemical vapor deposition (PECVD). This approach entails codepositing an OSG material with a plasma polymerizable hydrocarbon, followed by thermal annealing of the material to remove the porogen, leaving an OSG matrix with nano-sized voids. The dielectric constant of the final film is controlled by varying the ratio of porogen precursor to OSG precursor in the delivery gas. Because of the need to maintain the mechanical strength of the final material, diethoxymethylsilane (DEMS) is utilized as the OSG precursor. Utilizing this route we are able to deposit films with a dielectric constant of 2.55 to 2.20 and hardness of 0.7 to 0.3 GPa, respectively.

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Effect of material properties on integration damage in organosilicate glass films

Journal of Materials Research ◽

10.1557/jmr.2001.0458 ◽

2001 ◽

Vol 16 (12) ◽

pp. 3335-3338 ◽

Cited By ~ 21

Author(s):

E. Todd Ryan ◽

Jeremy Martin ◽

Kurt Junker ◽

Jeff Wetzel ◽

David W. Gidley ◽

...

Keyword(s):

Dielectric Constant ◽

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Material Properties ◽

Chemical Vapor ◽

Low Dielectric Constant ◽

Low Density ◽

Etch Patterns ◽

Low Dielectric ◽

Organosilicate Glass

Most organosilicate glass (OSG), low dielectric constant (low-κ) films contain Si–R groups, where R is an organic moiety such as −CH3. The organic component is susceptible to the chemically reactive plasmas used to deposit cap layers, etch patterns, and ash photoresist. This study compares a spin-on, mesoporous OSG film with a completely connected pore structure to both its nonmesoporous counterpart and to another low-density OSG film deposited by plasma-enhanced chemical vapor deposition. The results show that the film with connected pores was much more susceptible to integration damage than were the nonmesoporous OSG films.

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Study on the correlation between dielectric constant and chemical shift in FTIR spectra of SiOC film by chemical vapor deposition after annealing

physica status solidi (c) ◽

10.1002/pssc.200982437 ◽

2010 ◽

Vol 7 (2) ◽

pp. 448-451 ◽

Cited By ~ 5

Author(s):

Teresa Oh

Keyword(s):

Dielectric Constant ◽

Chemical Vapor Deposition ◽

Chemical Shift ◽

Vapor Deposition ◽

Chemical Vapor ◽

Ftir Spectra

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Silicon Recrystallization in Sipos Material Obtained by Disilane

MRS Proceedings ◽

10.1557/proc-403-351 ◽

1995 ◽

Vol 403 ◽

Author(s):

J. J. Pedroviejo ◽

B. Garrido ◽

J. C. Ferrer ◽

A. Cornet ◽

E. Scheid ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Thermal Annealing ◽

Rapid Thermal Annealing ◽

Vapor Deposition ◽

Polycrystalline Silicon ◽

Chemical Vapor ◽

Low Pressure ◽

Thermal Treatments ◽

Structural Modifications ◽

Pressure Chemical

AbstractConventional and Rapid Thermal Annealing of Semi-Insulating Polycrystalline Silicon layers obtained by Low Pressure Chemical Vapor Deposition (LPCVD) from disilane Si2H6 have been performed in order to determine the structural modifications induced on the layers by these thermal treatments. The study of these modifications has been carried out by several analysis methods like FTIR, XPS, TEM, RAMAN and ellipsometry. The results obtained are presented, contrasted and discussed in this work.

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