Postdeposition thermal annealing and material stability of 75 °C hydrogenated nanocrystalline silicon plasma-enhanced chemical vapor deposition films

2005 ◽  
Vol 98 (3) ◽  
pp. 034305 ◽  
Author(s):  
Czang-Ho Lee ◽  
David J. Grant ◽  
Andrei Sazonov ◽  
Arokia Nathan
Keyword(s):  
Chemical Vapor Deposition ◽  
Thermal Annealing ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Nanocrystalline Silicon ◽  
Material Stability

Plasma Enhanced Chemical Vapor Deposition of Porous Organosilicate Glass ILD Films With k ≤ 2.4.

2003 ◽  
Vol 766 ◽  
Author(s):  
Raymond N. Vrtis ◽  
Mark L. O'Neill ◽  
Jean L. Vincent ◽  
Aaron S. Lukas ◽  
Brian K. Peterson ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Chemical Vapor Deposition ◽  
Mechanical Strength ◽  
Thermal Annealing ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organosilicate Glass

AbstractWe report on our work to develop a process for depositing nanoporous organosilicate (OSG) films via plasma enhanced chemical vapor deposition (PECVD). This approach entails codepositing an OSG material with a plasma polymerizable hydrocarbon, followed by thermal annealing of the material to remove the porogen, leaving an OSG matrix with nano-sized voids. The dielectric constant of the final film is controlled by varying the ratio of porogen precursor to OSG precursor in the delivery gas. Because of the need to maintain the mechanical strength of the final material, diethoxymethylsilane (DEMS) is utilized as the OSG precursor. Utilizing this route we are able to deposit films with a dielectric constant of 2.55 to 2.20 and hardness of 0.7 to 0.3 GPa, respectively.

Silicon Recrystallization in Sipos Material Obtained by Disilane

1995 ◽  
Vol 403 ◽  
Author(s):  
J. J. Pedroviejo ◽  
B. Garrido ◽  
J. C. Ferrer ◽  
A. Cornet ◽  
E. Scheid ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Vapor Deposition ◽  
Polycrystalline Silicon ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Thermal Treatments ◽  
Structural Modifications ◽  
Pressure Chemical

AbstractConventional and Rapid Thermal Annealing of Semi-Insulating Polycrystalline Silicon layers obtained by Low Pressure Chemical Vapor Deposition (LPCVD) from disilane Si2H6 have been performed in order to determine the structural modifications induced on the layers by these thermal treatments. The study of these modifications has been carried out by several analysis methods like FTIR, XPS, TEM, RAMAN and ellipsometry. The results obtained are presented, contrasted and discussed in this work.

Growth and thermal annealing of amorphous germanium carbide obtained by X-ray chemical vapor deposition

2013 ◽  
Vol 48 (18) ◽  
pp. 6357-6366 ◽  
Author(s):  
C. Demaria ◽  
P. Benzi ◽  
A. Arrais ◽  
E. Bottizzo ◽  
P. Antoniotti ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Thermal Annealing ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Amorphous Germanium ◽  
X Ray ◽  
Germanium Carbide

scholarly journals INVESTIGATION OF GROWTH MECHANISM OF NANOCRYSTALLINE SILICON THIN FILMS PREPARED BY HOT-FILAMENT CHEMICAL VAPOR DEPOSITION

1997 ◽  
Vol 46 (10) ◽  
pp. 2015
Author(s):  
CHEN GUO ◽  
GUO XIAO-XU ◽  
ZHU MEI-FANG ◽  
SUN JING-LAN ◽  
XU HUAI-ZHE ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Growth Mechanism ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Nanocrystalline Silicon ◽  
Silicon Thin Films ◽  
Hot Filament

Nanocrystalline Silicon Dots Fabricated by Pulse RF Plasma-Enhanced Chemical Vapor Deposition of SiCl4-and-H2Mixture

2003 ◽  
Vol 42 (Part 2, No. 10A) ◽  
pp. L1191-L1194 ◽  
Author(s):  
Hajime Shirai ◽  
Yasuhiro Seri ◽  
Haijun Jia ◽  
Ken-ichi Kurosaki
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Nanocrystalline Silicon ◽  
Rf Plasma
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