Effects of Self-Ion Bombardment on Al/Si(n) Schottky Barrier Formation

1986 ◽  
Vol 77 ◽  
Author(s):  
J. Wong ◽  
S.-N. Mei ◽  
T.-M. Lu
Keyword(s):  
Thin Film ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Height ◽  
Graphite Crucible ◽  
Barrier Formation ◽  
Expansion Technique ◽  
Al Thin Film ◽  
Deposited Films ◽  
Deposition Techniques

ABSTRACTWe have employed a nozzle jet expansion technique to deposit Al thin film on chemically cleaned Si(n) surface. Pure Al is evaporated in a graphite crucible at a temperature of 15 50°C and is then ejected through a small nozzle into a vacuum region of 10-6 Torr. The Schottky barrier height of the as-deposited films is measured (using the J-V technique) to be 0.77eV, which is substantially higher than that obtained by conventional evaporation-deposition techniques(≤0.68eV). Our result suggests that an intimate Al/Si(n) contact has been formed during the jet expansion deposition of Al films.During the deposition, the Al jet beam can be partially ionized by electron bombardment. It is shown that the Schottky barrier height remain unchanged if a bias potential of V s0.5KeV is applied to the substrate during deposition. For Va >0.5 KeV, the diode became leaky and the barrier height was reduced. The energetic of the jet beam, with and without post ionization and acceleration, is discussed with respect to thin film and interface formation.

scholarly journals A Study about Schottky Barrier Height and Ideality Factor in Thin Film Transistors with Metal/Zinc Oxide Nanoparticles Structures Aiming Flexible Electronics Application

Nanomaterials ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 1188
Author(s):  
Ivan Rodrigo Kaufmann ◽  
Onur Zerey ◽  
Thorsten Meyers ◽  
Julia Reker ◽  
Fábio Vidor ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Flexible Electronics ◽  
Thin Film Transistors ◽  
Zinc Oxide Nanoparticles ◽  
Schottky Barrier Height ◽  
Oxide Nanoparticles ◽  
Semiconductor Interfaces

Zinc oxide nanoparticles (ZnO NP) used for the channel region in inverted coplanar setup in Thin Film Transistors (TFT) were the focus of this study. The regions between the source electrode and the ZnO NP and the drain electrode were under investigation as they produce a Schottky barrier in metal-semiconductor interfaces. A more general Thermionic emission theory must be evaluated: one that considers both metal/semiconductor interfaces (MSM structures). Aluminum, gold, and nickel were used as metallization layers for source and drain electrodes. An organic-inorganic nanocomposite was used as a gate dielectric. The TFTs transfer and output characteristics curves were extracted, and a numerical computational program was used for fitting the data; hence information about Schottky Barrier Height (SBH) and ideality factors for each TFT could be estimated. The nickel metallization appears with the lowest SBH among the metals investigated. For this metal and for higher drain-to-source voltages, the SBH tended to converge to some value around 0.3 eV. The developed fitting method showed good fitting accuracy even when the metallization produced different SBH in each metal-semiconductor interface, as was the case for gold metallization. The Schottky effect is also present and was studied when the drain-to-source voltages and/or the gate voltage were increased.

Delineation of Defects Reducing Schottky Barrier Heights on 4H-SiC by the Electrochemical Deposition

2008 ◽  
Vol 600-603 ◽  
pp. 373-376
Author(s):  
Masashi Kato ◽  
Kazuya Ogawa ◽  
Masaya Ichimura
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Electrochemical Deposition ◽  
Schottky Barrier Height ◽  
Proper Time ◽  
Etch Pits ◽  
Barrier Heights ◽  
Etch Pit ◽  
Deposition Voltage ◽  
Deposited Films

We identified regions with low Schottky barrier height on 4H-SiC surfaces by the electrochemical deposition of ZnO. When we adopt an appropriate deposition voltage, ZnO grew preferentially at the regions with the low Schottky barrier height. Thus, we were able to identify the ZnO film only at these regions if we stopped the deposition at a proper time. We compared positions of the deposited film and etch pit after molten NaOH etching. As a result, in a bulk 4H-SiC, the films were deposited around some of micropipe positions. On the other hand, in an epitaxial 4H-SiC layer, although approximately a half of deposited films seemed to grow at the etch-pit defect positions, other deposited films were grown at positions without etch-pit defects. Therefore the Schottky barrier heights were reduced by not only defects emerging as etch pits but also other kind of origins in epitaxial 4H-SiC.

Interfacial Diffusion/Reaction and Electrical Properties of Pd Ultra-Thin Film on Sic at Different Annealing Temperatures

1998 ◽  
Vol 512 ◽  
Author(s):  
W. Lu ◽  
D. T. Shi ◽  
W. E. Collins ◽  
H. Chen ◽  
A. Burger
Keyword(s):  
Thin Film ◽  
Electrical Properties ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Height ◽  
Hydrogen Gas ◽  
Diffusion Reaction ◽  
Scanning Tunneling ◽  
Annealing Temperatures ◽  
Ultra Thin Film

ABSTRACTPd/SiC has been used as a high temperature hydrocarbon and hydrogen gas sensor in environmental and aeronautical applications. In this work, the relationships between diffusion, reaction, and interfacial chemical composition with electrical properties for Pd ultra-thin films on 6H-SiC (∼< 30Å) are studied at different annealing temperatures.Ultra-thin film Pd on 6H-SiC has been prepared by the RF sputtering method. The Schottky barrier heights are measured by XPS for an unannealed sample and samples annealed from 100°C to 400°C for 30 minutes, respectively. No significant change in the Schottky barrier height of the Pd/SiC contact was found in the temperature range. The morphology from UHV-STM and AFM show that the unannealed Pd thin film had good uniformity across the SiC substrate, and the Pd has dispersed, and then partially aggregated into rounded shaped precipitates with increasing annealing temperatures. At 400°C, all Pd metal has reacted and formed to silicides. From XPS, Pd2Si was found on the surface after annealing, and almost all Pd has reacted to become Pd2Si after annealing at 400°C. No other silicide was found. The intensity of Pd on XPS decreases enormously at 400°C. This is explained if Pd has diffused into SiC. The Pd diffusion and the formation of Pd silicides do not significantly affect the Schottky barrier height. The SiO2 was found at the top of surface after annealing, and increased in amount with increasing annealing temperature. The SiO2 formation was accelerated by the presence of Pd. Pd may play a role in absorbing oxygen, and activating Si from SiC to form SiO2.Key Words: Pd thin film, SiC, X-ray photoelectron spectroscopy, scanning tunneling microscopy, and atomic force microscopy.

Structure and Properties of WNx Thin Film on GaAs Substrate

1990 ◽  
Vol 216 ◽  
Author(s):  
Dali Mao ◽  
Weili Yu ◽  
Dongliang Lin ◽  
T.L. Lin
Keyword(s):  
Thin Film ◽  
Electrical Resistivity ◽  
Partial Pressure ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Gaas Substrate ◽  
Schottky Barrier Height ◽  
Stable Phase ◽  
Nitrogen Partial Pressure ◽  
Structure And Properties

ABSTRACTIn this paper, the effect of sputtering parameters on the interfacial reaction and the electronic properties of the WNx system were reported.The report showed that W and W2 N phases were observed in WNx film on GaAs substrate annealed at 800–900°C, in which no UN phase was found and W2N was the stable phase. Throughout the WNx film, W,N distributed uniformly. There was no interdiffusion between WN, films and GaAs substrate annealed at 80°C. However, at 900°C, there was some N in-diffusion to substrate, but no Ga or As out-diffusion. The electrical resistivity p of WNx films increased with increasing nitrogen partial pressure r. All the samples with r<0.2 showed the p below 200 µΩcm. By the I/V measurement, the Schottky Barrier Height was obtained with the value: øB=0.93ev, n=1.30 for WNx/n-GaAs contact that annealed at 850°C, 15 minutes.

Low Resistance Ohmic Contact on ZnO Thin Film Revealed by Schottky Barrier Height

Silicon ◽  
2021 ◽  
Author(s):  
Basavaraj S. Sannakashappanavar ◽  
Aniruddh B. Yadav ◽  
Vinod Kumar ◽  
N. V. L. Narasimha Murty ◽  
K. Singh
Keyword(s):  
Thin Film ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Ohmic Contact ◽  
Schottky Barrier Height ◽  
Zno Thin Film ◽  
Low Resistance

Soft X-Ray Photoemission Measurement of Schottky Barrier Formation at The Pd-si Interface

1982 ◽  
Vol 18 ◽  
Author(s):  
R. Purtell ◽  
P. S. Ho ◽  
G. W. Rubloff ◽  
G. Holinger
Keyword(s):  
Binding Energy ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Height ◽  
Core Level ◽  
Naval Research ◽  
Band Bending ◽  
X Ray ◽  
Barrier Formation ◽  
Height Change

The binding energy of the bulk Si 2p levels observed with soft X-ray photoemission can be used to monitor the band bending in the silicon space charge region when a metal is deposited onto the silicon surface. Changes in the 2p binding energy with metal coverage can then be used to determine the change in the Schottky barrier height as the metal-silicon contact is formed. By tuning the photon energy and therefore the photoemitted electron escape depth, chemical shifts (atomic environment effects) at the interface can be separated from the bulk band bending effects. When combined with annealing to produce in-depth atomic intermixing, the result may reveal information on the distribution of metal atoms at the interface and its effect on the barrier height.Measurements of the Schottky barrier height change as a function of palladium deposition were made on (2 × 1) p-type and (7 × 7) n-type Si(111) surfaces by monitoring Si 2p core level shifts in a bulk sensitive mode. The barrier height change reached 1/e of its final value at a palladium coverage of 2.9 Å. Several experiments have made it possible to relate the measured Si 2p core level monitor of band bending to absolute Schottky barrier heights in a fully consistent fashion. Therefore, these results provide a means to measure the barrier height in the initial stages of Schottky barrier formation (i.e. at low metal coverage) and to compare these observations with the chemical behavior of the interface at low coverage and with electrical measurements on bulk contacts. Since the Pd/Si Schottky barrier height is established at the bulk value within a coverage of 3–5 Å (even before the overlayer is metallic), the role of interface chemical bonds in determining the barrier height is paramount.This work was supported in part by the U.S. Office of Naval Research.

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