Soft X-Ray Photoemission Measurement of Schottky Barrier Formation at The Pd-si Interface

1982 ◽  
Vol 18 ◽  
Author(s):  
R. Purtell ◽  
P. S. Ho ◽  
G. W. Rubloff ◽  
G. Holinger
Keyword(s):  
Binding Energy ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Height ◽  
Core Level ◽  
Naval Research ◽  
Band Bending ◽  
X Ray ◽  
Barrier Formation ◽  
Height Change

The binding energy of the bulk Si 2p levels observed with soft X-ray photoemission can be used to monitor the band bending in the silicon space charge region when a metal is deposited onto the silicon surface. Changes in the 2p binding energy with metal coverage can then be used to determine the change in the Schottky barrier height as the metal-silicon contact is formed. By tuning the photon energy and therefore the photoemitted electron escape depth, chemical shifts (atomic environment effects) at the interface can be separated from the bulk band bending effects. When combined with annealing to produce in-depth atomic intermixing, the result may reveal information on the distribution of metal atoms at the interface and its effect on the barrier height.Measurements of the Schottky barrier height change as a function of palladium deposition were made on (2 × 1) p-type and (7 × 7) n-type Si(111) surfaces by monitoring Si 2p core level shifts in a bulk sensitive mode. The barrier height change reached 1/e of its final value at a palladium coverage of 2.9 Å. Several experiments have made it possible to relate the measured Si 2p core level monitor of band bending to absolute Schottky barrier heights in a fully consistent fashion. Therefore, these results provide a means to measure the barrier height in the initial stages of Schottky barrier formation (i.e. at low metal coverage) and to compare these observations with the chemical behavior of the interface at low coverage and with electrical measurements on bulk contacts. Since the Pd/Si Schottky barrier height is established at the bulk value within a coverage of 3–5 Å (even before the overlayer is metallic), the role of interface chemical bonds in determining the barrier height is paramount.This work was supported in part by the U.S. Office of Naval Research.

Photoemission Studies of the Ag/InP(110) Interface: Interfacial Reactions and Schottky Barrier Formation

1983 ◽  
Vol 25 ◽  
Author(s):  
W. G. Petro ◽  
T. Kendelewicz ◽  
I. A. Babalola ◽  
I. Lindau ◽  
W. E. Spicer
Keyword(s):  
Valence Band Maximum ◽  
Interfacial Reactions ◽  
Core Level ◽  
Photoemission Spectroscopy ◽  
Band Bending ◽  
X Ray ◽  
Barrier Formation ◽  
Deconvolution Technique ◽  
P Type ◽  
Measurable Change

ABSTRACTRoom-temperature interfacial reactions at the Ag/InP (110) interface have been studied using soft x-ray photoemission spectroscopy of the In 4d and P 2p core levels. For low Ag coverages (less than 1 monolayer (ML)) no measurable change in core level shapes is observed, and the shift in core level position is due solely to band bending. At high Ag coverages (up to 72 ML) we observe dissociated In metal, P atoms near the surface, and Ag clustering. Fermi level movement is deduced from these spectra using a deconvolution technique, and pinning positions of 0.40 ± 0.05 eV below the conduction-band minimum for n-type and 0.5 ± 0.l eV above the valence-band maximum for p-type are found. These positions are in close agreement with calculations of native defect levels.

Barrier Height Control and X-Ray Diffraction Study of Metal on Si1−Gex/Si Grown by Very Low Pressure CVD

1995 ◽  
Vol 402 ◽  
Author(s):  
Z. Q. Shiâ ◽  
L. He ◽  
Y. Zheng
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Diodes ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Control Technique ◽  
X Ray Diffraction ◽  
X Ray ◽  
Height Control ◽  
Barrier Formation

AbstractThe potential application of epitaxial Si1−xGex, on Si in electronic and optoelectronic devices has led to an increased study of metal - Si1−xGex interaction and barrier height control technique. In this paper, we report the epitaxial growth of Si1−xGex on Si and the Schottky barrier formation processing. The Si1−xGex (x=0.17 and 0.20) layers were grown by rapid radiant heating, very low pressure chemical vapor deposition (VLPCVD). The crystal structure and epitaxial nature of the Si1−xGex, layers were studied by X-Ray diffraction. The value of full width at half maximum (FWHM) was found to be 0.34° for the as grown Si1−xGex (400) peak. The metal-Si1−xGex/Si Schottky diodes were formed by depositing Pd on Si1−xGex/Si at room temperature (RT=300K) and low temperature (LT=77K). The Schottky barrier heights and current transport mechanisms were determined by current-voltage-temperature (I-V-T) measurements. The interface property of Pd/ Si1−xGex/Si were studied as a function of metal deposition and post annealing temperatures.

Effect of Si and Ge Interface Layers on the Schottky Barrier Height of Metal Contacts to GaAs

1989 ◽  
Vol 148 ◽  
Author(s):  
J.R. Waldrop ◽  
R.W. Grant
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Height ◽  
Photoemission Spectroscopy ◽  
Metal Contacts ◽  
New Approach ◽  
X Ray ◽  
Electrical Methods ◽  
Interface Layers ◽  
P Type

ABSTRACTA new approach for extending the range of the Schottky barrier height ϕB of metal contacts to (100) GaAs is described. Very thin (∼ 10-30Å) heavily n-type and p-type Si or Ge interlayers are found to directly alter the GaAi interface Fermi energy EF. X-ray photoemission spectroscopy is used to determine EF during contact formation and the corresponding ϕB for thick contacts is measured by electrical methods. In an appropriate structure the ϕB range for contacts to n-type GaAs is ∼ 0.25 to 1.0 eV. For p-type GaAs ϕB has been increased to as much as 0.9 eV. This method of ϕBcontrol can be used for both Schottky barrier contact and nonalloyed ohmic contact applications. The results are interpreted in terms of a simple heterojunction model.

Effects of Self-Ion Bombardment on Al/Si(n) Schottky Barrier Formation

1986 ◽  
Vol 77 ◽  
Author(s):  
J. Wong ◽  
S.-N. Mei ◽  
T.-M. Lu
Keyword(s):  
Thin Film ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Height ◽  
Graphite Crucible ◽  
Barrier Formation ◽  
Expansion Technique ◽  
Al Thin Film ◽  
Deposited Films ◽  
Deposition Techniques

ABSTRACTWe have employed a nozzle jet expansion technique to deposit Al thin film on chemically cleaned Si(n) surface. Pure Al is evaporated in a graphite crucible at a temperature of 15 50°C and is then ejected through a small nozzle into a vacuum region of 10-6 Torr. The Schottky barrier height of the as-deposited films is measured (using the J-V technique) to be 0.77eV, which is substantially higher than that obtained by conventional evaporation-deposition techniques(≤0.68eV). Our result suggests that an intimate Al/Si(n) contact has been formed during the jet expansion deposition of Al films.During the deposition, the Al jet beam can be partially ionized by electron bombardment. It is shown that the Schottky barrier height remain unchanged if a bias potential of V s0.5KeV is applied to the substrate during deposition. For Va >0.5 KeV, the diode became leaky and the barrier height was reduced. The energetic of the jet beam, with and without post ionization and acceleration, is discussed with respect to thin film and interface formation.

W/Si Schottky Diodes: Effect of Metal Deposition Conditions on the Barrier Height

1994 ◽  
Vol 356 ◽  
Author(s):  
M. Mamor ◽  
E. Finkman ◽  
F. Meyer ◽  
K. Bouziane
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Height ◽  
Schottky Diodes ◽  
X Ray Diffraction ◽  
Experimental Conditions ◽  
X Ray ◽  
Barrier Heights ◽  
P Type ◽  
Deposition Conditions

AbstractThe Schottky barrier heights (ΦB) for W/Si Schottky diodes have been determined from I–V measurements. The effects of the sputter deposition conditions of the W-films were studied. X-ray diffraction was used to examine the structure and the lattice parameters of the W-films while the stress was determined by using a profilometer from the measurement of the curvature of the substrate after metallization. The resistivity is determined by using a four-point probe. A compressive-to-tensile stress transition is associated with the transformation of the ±—W-phase into the (β—W-phase as the working gas pressure is increased. These effects, which are frequently observed, coïncide with a significant increase of the W-film resistivity and a change (△ΦB≈50 meV) in the Schottky barrier height on n-type. On the other hand, the barrier height on the p-type remains constant under all the experimental conditions investigated. These results are discussed in terms of effects of strain and structure of W-films on the work function of the W, as well as in terms of modification of the pinning position of the Fermi level or else change in the value of the Richardson constant.

scholarly journals X-ray photoemission determination of the Schottky barrier height of metal contacts ton–GaN andp–GaN

2002 ◽  
Vol 92 (11) ◽  
pp. 6671-6678 ◽  
Author(s):  
K. A. Rickert ◽  
A. B. Ellis ◽  
Jong Kyu Kim ◽  
Jong-Lam Lee ◽  
F. J. Himpsel ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Height ◽  
Metal Contacts ◽  
X Ray

High-Resolution Core Level Study of the Co/Si(111) Interface

1986 ◽  
Vol 83 ◽  
Author(s):  
F. Boscherini ◽  
J. J. Joyce ◽  
M. W. Ruckman ◽  
J. H. Weaver
Keyword(s):  
High Temperature ◽  
High Resolution ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Room Temperature ◽  
Schottky Barrier Height ◽  
Core Level ◽  
Reaction Products ◽  
Semiconductor Structures ◽  
Epitaxial Interface

There has recently been considerable interest in the reaction between Co and a clean Si surface. This interest stems from the epitaxy of CoSi2 and NiSi2 on Si and its potential for the construction of reliable and stable metal-semiconductor structures. In fact, the fabrication of a Si/CoSi2/Si transistor has been recently reported.[l] On a more fundamental side, it has been possible to address the problem of the relation between Schottky barrier height and structure at the NiSi2/Ni interface, which exhibits both a rotated (B-type) and unrotated (A-type) geometry.[2] For CoSi2/Si only the 180° rotated, B-type disilicide is formed. By studying the room temperature interface, we have attempted to describe the nature and physical extent of reaction products; such knowledge is important to understand the formation of interface silicides which ultimately control the nature of the high temperature epitaxial interface.

Diamond Schottky Barrier Diode with Fluorine- and Oxygen-Termination

MRS Advances ◽  
2016 ◽  
Vol 1 (16) ◽  
pp. 1125-1130 ◽  
Author(s):  
Chao Hu ◽  
Zhangcheng Liu ◽  
Jingwen Zhang ◽  
Wei Wang ◽  
Hong-Xing Wang
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Photoelectron Spectroscopy ◽  
Schottky Barrier Height ◽  
Diamond Surface ◽  
Aqua Regia ◽  
X Ray ◽  
Voltage Curve ◽  
Current Voltage ◽  
Current Voltage Curve

ABSTRACTSchottky properties of Mo on diamond with fluorine- and oxygen-termination had been investigated. Oxygen-termination was generated by aqua regia. Fluorine-termination was generated by CF4plasma treatment. Mo/Ni/Au was deposited on the diamond surface as Schottky electrode, whose barrier height was evaluated from current-voltage curve. After that, the X-ray photoelectron spectroscopy methods were applied to calculate the Schottky barrier height of Mo on different termination surface. The results indicated that the fluorine-termination and oxygen-termination show different schottky properties.

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