Transmission electron microscopy of misfit dislocation and strain relaxation in lattice mismatched III-V heterostructures versus substrate surface treatment

2011 ◽  
Vol 1324 ◽  
Author(s):  
Y. Wang ◽  
P. Ruterana ◽  
L. Desplanque ◽  
S. El Kazzi ◽  
X. Wallart
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Surface Treatment ◽  
Substrate Surface ◽  
Strain Relaxation ◽  
Dislocation Core ◽  
Misfit Dislocations ◽  
Heteroepitaxial Growth ◽  
Transmission Electron ◽  
Growth Initiation

ABSTRACTHigh resolution transmission electron microscopy in combination with geometric phase analysis is used to investigate the interface misfit dislocations, strain relaxation, and dislocation core behavior versus the surface treatment of the GaAs for the heteroepitaxial growth of GaSb. It is pointed out that Sb-rich growth initiation promotes the formation of a high quality network of Lomer misfit dislocations that are more efficient for strain relaxation.

Evaluation of the Interface Structure During Stranski-Krastanov Growth of GE(SI) on Si (001)

1991 ◽  
Vol 238 ◽  
Author(s):  
M. Albrecht ◽  
H. P. Strunk ◽  
P. O. Hansson ◽  
E. Bauser
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Interface Structure ◽  
Misfit Dislocations ◽  
Heteroepitaxial Growth ◽  
Dislocation Glide ◽  
Transmission Electron ◽  
Half Loop

ABSTRACTThe initial stages of heteroepitaxial growth of Ge0.85 Si0.15 on Si(001) grown from Bi solution (liquid phase epitaxy) are studid by transmission electron microscopy. Stranski-Krastanov growth is observed to take place. After growth of a pseudomorphic Ge0.85 Si0.15 layer of 4 monolayer thickness, islands form and grow pseudomorphically up to a thickness of 30 nm. Then first misfit dislocations form. The formation process of these dislocations is analyzed and discussed in terms of half loop nucleation at the surface and dislocation glide. Evidence for glide on (110) planes is put forward.

Mechanisms of misfit strain relaxation in epitaxially grown BLT (Bi4-xLaxTi3O12, x = 0.75) thin films

2003 ◽  
Vol 779 ◽  
Author(s):  
Hyung Seok Kim ◽  
Sang Ho Oh ◽  
Ju Hyung Suh ◽  
Chan Gyung Park
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Strain Relaxation ◽  
Lattice Misfit ◽  
Misfit Strain ◽  
Misfit Dislocations ◽  
Transmission Electron ◽  
Means Of Transmission ◽  
20 Nm

AbstractMechanisms of misfit strain relaxation in epitaxially grown Bi4-xLaxTi3O12 (BLT) thin films deposited on SrTiO3 (STO) and LaAlO3 (LAO) substrates have been investigated by means of transmission electron microscopy (TEM). The misfit strain of 20 nm thick BLT films grown on STO substrate was relaxed by forming misfit dislocations at the interface. However, cracks were observed in 100 nm thick BLT films grown on the same STO. It was confirmed that cracks were formed because of high misfit strain accumulated with increasing the thickness of BLT, that was not sufficiently relaxed by misfit dislocations. In the case of the BLT film grown on LAO substrate, the magnitude of lattice misfit between BLT and LAO was very small (~1/10) in comparison with the case of the BLT grown on STO. The relatively small misfit strain formed in layered structure of the BLT films on LAO, therefore, was easily relaxed by distorting the film, rather than forming misfit dislocations or cracks, resulting in misorientation regions in the BLT film.

Cs-Corrected Scanning Transmission Electron Microscopy Investigation of Dislocation Core Configurations at a SrTiO3/MgO Heterogeneous Interface

2013 ◽  
Vol 19 (3) ◽  
pp. 706-715 ◽  
Author(s):  
Yuanyuan Zhu ◽  
Chengyu Song ◽  
Andrew M. Minor ◽  
Haiyan Wang
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Misfit Dislocation ◽  
Scanning Transmission Electron Microscopy ◽  
Substrate Surface ◽  
Dislocation Core ◽  
Dislocation Network ◽  
Scanning Transmission Electron ◽  
Transmission Electron ◽  
Scanning Transmission

AbstractHeterostructures and interfacial defects in a 40-nm-thick SrTiO3 (STO) film grown epitaxially on a single-crystal MgO (001) were investigated using aberration-corrected scanning transmission electron microscopy and geometric phase analysis. The interface of STO/MgO was found to be of the typical domain-matching epitaxy with a misfit dislocation network having a Burgers vector of ½ aSTO ⟨100⟩. Our studies also revealed that the misfit dislocation cores at the heterogeneous interface display various local cation arrangements in terms of the combination of the extra-half inserting plane and the initial film plane. The type of the inserting plane, either the SrO or the TiO2 plane, alters with actual interfacial conditions. Contrary to previous theoretical calculations, the starting film planes were found to be dominated by the SrO layer, i.e., a SrO/MgO interface. In certain regions, the starting film planes change to the TiO2/MgO interface because of atomic steps at the MgO substrate surface. In particular, four basic misfit dislocation core configurations of the STO/MgO system have been identified and discussed in relation to the substrate surface terraces and possible interdiffusion. The interface structure of the system in reverse—MgO/STO—is also studied and presented for comparison.

Ion thinning of integrated circuit transverse specimens for transmission electron microscopy

1992 ◽  
Vol 50 (2) ◽  
pp. 1426-1427
Author(s):  
F. Shaapur
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Integrated Circuit ◽  
Substrate Surface ◽  
Homogeneous Material ◽  
Material System ◽  
Ion Milling ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Motion Profile

Non-uniform ion-thinning of heterogenous material structures has constituted a fundamental difficulty in preparation of specimens for transmission electron microscopy (TEM). A variety of corrective procedures have been developed and reported for reducing or eliminating the effect. Some of these techniques are applicable to any non-homogeneous material system and others only to unidirectionalfy heterogeneous samples. Recently, a procedure of the latter type has been developed which is mainly based on a new motion profile for the specimen rotation during ion-milling. This motion profile consists of reversing partial revolutions (RPR) within a fixed sector which is centered around a direction perpendicular to the specimen heterogeneity axis. The ion-milling results obtained through this technique, as studied on a number of thin film cross-sectional TEM (XTEM) specimens, have proved to be superior to those produced via other procedures.XTEM specimens from integrated circuit (IC) devices essentially form a complex unidirectional nonhomogeneous structure. The presence of a variety of mostly lateral features at different levels along the substrate surface (consisting of conductors, semiconductors, and insulators) generally cause non-uniform results if ion-thinned conventionally.

Atomic Structure and Property Correlation in Pulsed Laser Deposited High -Tc Films

1998 ◽  
Vol 526 ◽  
Author(s):  
R. Kalyanaraman ◽  
S. Oktyabrsky ◽  
K. Jagannadham ◽  
J. Narayan
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Grain Boundaries ◽  
Atomic Structure ◽  
Substrate Surface ◽  
Pulsed Laser ◽  
Structure And Property ◽  
Transmission Electron ◽  
Tilt Boundaries ◽  
Z Contrast

AbstractThe atomic structure of grain boundaries in pulsed laser deposited YBCO/MgO thin films have been studied using transmission electron microscopy. The films have perfect texturing with YBCO(001)//MgO(001), giving rise to low-angle [001] tilt boundaries from the grains with the c-axis normal to substrate surface. Low angle grain boundaries have been found to be aligned preferentially along (100) and (110) interface planes. The energy of (110) boundary planes described by an alternating array of [100] and [010] dislocation is found to be comparable to the energy of a (100) boundary. The existence of these split dislocations is shown to further reduce the theoretical current densities of these boundaries indicating that (110) boundaries carry less current as compared to (100) boundaries of the same misorientation angle. Further, Z-contrast transmission electron microscopy of a 42° asymmetric high-angle grain boundary of YBCO shows evidence for the existence of boundary fragments and a reduced atomic density along the boundary plane

Transmission Electron Microscopy Studies of Strained Si CMOS

2005 ◽  
Vol 864 ◽  
Author(s):  
Qianghua Xie ◽  
Peter Fejes ◽  
Mike Kottke ◽  
Xiangdong Wang ◽  
Mike Canonico ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Scanning Transmission Electron Microscopy ◽  
Structural Information ◽  
Threading Dislocation ◽  
Misfit Dislocations ◽  
Strained Si ◽  
Thermal Budget ◽  
Transmission Electron ◽  
Scanning Transmission

AbstractIn this paper, various types of defects (both threading dislocation and misfit dislocations) in strained Si (sSi) have been analyzed by transmission electron microscopy (TEM). Germanium upper-diffusion has been studied by scanning transmission electron microscopy (STEM) for strained Si on SiGe/SOI. SGOI-devices processed using an optimized thermal budget show minimal Ge diffusion and minimal process related defects. Correlation between the device performance (such as leakage current and reliability) and structural information found in TEM has been established.

Transmission Electron Microscopy Study of Epitaxial Co/Au and Co/Pd (111) Multilayers

1992 ◽  
Vol 263 ◽  
Author(s):  
A.E.M. de Veirman ◽  
F. Hakkens ◽  
W. Coene ◽  
F.J.A. Den Broeder
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution Electron Microscopy ◽  
Microscopy Study ◽  
Electron Microscopy Study ◽  
Interface Plane ◽  
Misfit Dislocations ◽  
Transmission Electron Microscopy Study ◽  
Cross Sectional ◽  
Transmission Electron

ABSTRACTThe results of a transmission electron microscopy study of Co/Au and Co/Pd multilayers are reported. Special emphasis is put on the epitaxial growth and the relaxation of the misfit strain of these high misfit systems. In bright-field cross-sectional images, periodic contrast fringes are observed at the interfaces, which are the result of Moiré interference and which allow determination of the degree of misfit relaxation at the interface. It was established that 80-85% of the misfit is relaxed. From high resolution electron microscopy images the Burgers vector of the misfit dislocations was derived, being a/2<110> lying in the (111) interface plane. The results obtained for the Co/Au and Co/Pd multilayers will be discussed in comparison with those obtained for a bilayer of Co and Au.

Characterization and Growth Mechanism of B12As2 Epitaxial Layers Grown on (1-100) 15R-SiC

2008 ◽  
Vol 1069 ◽  
Author(s):  
Hui Chen ◽  
Guan Wang ◽  
Michael Dudley ◽  
Zhou Xu ◽  
James. H. Edgar ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Growth Mechanism ◽  
Heteroepitaxial Growth ◽  
High Quality ◽  
X Ray ◽  
Transmission Electron ◽  
Substrate Choice

ABSTRACTA systematic study is presented of the heteroepitaxial growth of B12As2 on m-plane 15R-SiC. In contrast to previous studies of B12As2 on other substrates, including (100) Si, (110) Si, (111) Si and (0001) 6H-SiC, single crystalline and untwinned B12As2 was achieved on m-plane 15R-SiC. Observations of IBA on m-plane (1100)15R-SiC by synchrotron white beam x-ray topography (SWBXT) and high resolution transmission electron microscopy (HRTEM) confirm the good quality of the films on the 15R-SiC substrates. The growth mechanism of IBA on m-plane 15R-SiC is discussed. This work demonstrates that m-plane 15R-SiC is potentially a good substrate choice to grow high quality B12As2 epilayers.

Nanomechanical Properties and Nanostructure of CMG and CMP Machined Si Substrates

2008 ◽  
Vol 381-382 ◽  
pp. 525-528 ◽  
Author(s):  
B.L. Wang ◽  
Han Huang ◽  
Jin Zou ◽  
Li Bo Zhou
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Substrate Surface ◽  
Transmission Electron Microscopy Analysis ◽  
Cross Sectional ◽  
Force Microscopy ◽  
Si Substrates ◽  
Atomic Force ◽  
Transmission Electron ◽  
Electron Microscopy Analysis

Silicon (100) substrates machined by chemo-mechanical-grinding (CMG) and chemicalmechanical- polishing (CMP) were investigated using atomic force microscopy, cross-sectional transmission electron microscopy and nanoindentation. It was found that the substrate surface after CMG was slightly better than machined by CMP in terms of roughness. The transmission electron microscopy analysis showed that the CMG-generated subsurface was defect-free, but the CMP specimen had a crystalline layer of about 4 nm in thickness on the top of the silicon lattice as evidenced by the extra diffraction spots. Nanoindentation results indicated that there exists a slight difference in mechanical properties between the CMG and CMP machined substrates.

Tem Assessment of Defects in (CdHg)Te Heterostructures

1990 ◽  
Vol 216 ◽  
Author(s):  
S.G. Lawson-Jack ◽  
I.P. Jones ◽  
D.J. Williams ◽  
M.G. Astles
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Buffer Layer ◽  
High Density ◽  
Misfit Dislocations ◽  
Cross Sectional ◽  
Burgers Vector ◽  
Density Of Dislocations ◽  
Transmission Electron ◽  
Interfacial Plane

ABSTRACTTransmission electron microscopy has been used to assess the defect contents of the various layers and interfaces in (CdHg) Te heterostructures. Examination of cross sectional specimens of these materials suggests that the density of misfit dislocations at the interfaces is related to the layer thicknesses, and that the high density of dislocations which are generated at the GaAs/CdTe interface are effectively prevented from penetrating into the CdHgTe epilayer by a 3um thick buffer layer. The majority of the dislocations in the layers were found to have a Burgers vector b = a/2<110> and either lie approximately parallel or inclined at an angle of ∼ 60° to the interfacial plane.

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