Growth and study of BaZrO3 thin films by pulsed excimer laser ablation

2003 ◽  
Vol 784 ◽  
Author(s):  
V. Rajasekarakumar ◽  
P. Victor ◽  
R. Ranjith ◽  
S. Saha ◽  
S. Rajagopalan ◽  
...  
Keyword(s):  
Thin Films ◽  
Secondary Ion Mass Spectrometry ◽  
Ex Situ ◽  
Silicon Substrates ◽  
Frequency Regime ◽  
Different Temperatures ◽  
The Right ◽  
Limiting Case ◽  
Secondary Ion

ABSTRACTThin films of BaZrO3 (BZ) were grown using a pulsed laser deposition technique on platinum coated silicon substrates. Films showed a polycrystalline perovskite structure upon different annealing procedures of in-situ and ex-situ crystallization. The composition analyses were done using Energy dispersive X-ray analysis (EDAX) and Secondary ion mass spectrometry (SIMS). The SIMS analysis revealed that the ZrO2 formation at the right interface of substrate and the film leads the degradation of the device on the electrical properties in the case of ex-situ crystallized films. But the in-situ films exhibited no interfacial formation. The dielectric properties have been studied for the different temperatures in the frequency regime of 40 Hz to 100kHz. The response of the film to external ac stimuli was studied at different temperatures, and it showed that ac conductivity values in the limiting case are correspond to oxygen vacancy motion. The electrical modulus is fitted to a stretched exponential function and the results clearly indicate the presence of the non-Debye type of dielectric relaxation in these materials.

Low Temperature Epitaxy Of Si/Si1-xGex/Si Multilayers By Low Pressure Rtcvd For Very Thin Soi Applications

1998 ◽  
Vol 533 ◽  
Author(s):  
D.W. McNeill ◽  
D.L. Gay ◽  
X. Lip ◽  
B.M. Armstrong ◽  
H.S. Gamble
Keyword(s):  
Scanning Probe Microscopy ◽  
Secondary Ion Mass Spectrometry ◽  
Chemical Vapour ◽  
High Growth ◽  
Silicon On Insulator ◽  
Ex Situ ◽  
Growth Time ◽  
Oxide Contamination ◽  
Secondary Ion

AbstractThe growth by rapid thermal chemical vapour deposition of Si/Si1-xGex/Si multilayer structures, suitable for thin bond and etch-back silicon-on-insulator fabrication has been investigated. Surface topography was studied by scanning probe microscopy, and layer contamination by secondary ion mass spectrometry. Smooth layers are only achieved at high growth temperatures (>700°C), and when surface oxide contamination is reduced by a combination of ex-situ HF vapour treatment and in-situ high temperature H2 bake. A surface peak-to-peak roughness of 15nm for a Si/Si1-xGex/Si multilayer structure has been achieved by reducing the growth time at 700°C or less. Further improvement is possible, especially if carbon contamination can be reduced.

scholarly journals In Situ Recrystallization of Co-Evaporated Cu(In,Ga)Se2 Thin Films by Copper Chloride Vapor Treatment towards Solar Cell Applications

Energies ◽  
2021 ◽  
Vol 14 (13) ◽  
pp. 3938
Author(s):  
Deewakar Poudel ◽  
Benjamin Belfore ◽  
Tasnuva Ashrafee ◽  
Elizabeth Palmiotti ◽  
Shankar Karki ◽  
...  
Keyword(s):  
Thin Films ◽  
Secondary Ion Mass Spectrometry ◽  
Copper Chloride ◽  
Recrystallization Process ◽  
X Ray Diffraction ◽  
X Ray ◽  
Stage Process ◽  
Secondary Ion ◽  
Vapor Treatment

Cu(In,Ga)Se2 (or CIGS) thin films and devices were fabricated using a modified three-stage process. Using high deposition rates and a low temperature during the process, a copper chloride vapor treatment was introduced in between the second and third stages to enhance the films properties. X-ray diffraction and scanning electron microscopy demonstrate that drastic changes occur after this recrystallization process, yielding films with much larger grains. Secondary ion mass spectrometry shows that the depth profile of many elements is not modified (such as Cu, In and Se) while others change dramatically (such as Ga and Na). Because of the competing effects of these changes, not all parameters of the solar cells are enhanced, yielding an increase of 15% in the device efficiency at the most.

The use of transmission and analytical electron microscopy in studying reactions and phase transformations in thin film

1993 ◽  
Vol 51 ◽  
pp. 842-843
Author(s):  
K. Barmak
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Phase Transformations ◽  
Analytical Electron Microscopy ◽  
Ex Situ ◽  
Multilayer Thin Films ◽  
Absolute Concentration ◽  
Analytical Electron ◽  
Deposition Step

Generally, processing of thin films involves several annealing steps in addition to the deposition step. During the annealing steps, diffusion, transformations and reactions take place. In this paper, examples of the use of TEM and AEM for ex situ and in situ studies of reactions and phase transformations in thin films will be presented.The ex situ studies were carried out on Nb/Al multilayer thin films annealed to different stages of reaction. Figure 1 shows a multilayer with dNb = 383 and dAl = 117 nm annealed at 750°C for 4 hours. As can be seen in the micrograph, there are four phases, Nb/Nb3-xAl/Nb2-xAl/NbAl3, present in the film at this stage of the reaction. The composition of each of the four regions marked 1-4 was obtained by EDX analysis. The absolute concentration in each region could not be determined due to the lack of thickness and geometry parameters that were required to make the necessary absorption and fluorescence corrections.

Optics-Free Visualization of Proteins in Single Cells by Time of Flight-Secondary Ion Mass Spectrometry Coupled with Genetically Encoded Chemical Tags

2020 ◽  
Author(s):  
Feifei Jia ◽  
Jie Wang ◽  
Yanyan Zhang ◽  
Qun Luo ◽  
Luyu Qi ◽  
...  
Keyword(s):  
Mass Spectrometry ◽  
Secondary Ion Mass Spectrometry ◽  
Single Cells ◽  
Time Of Flight ◽  
E Coli ◽  
Tof Sims ◽  
Ion Mass Spectrometry ◽  
Chemical Tags ◽  
Secondary Ion

<p></p><p><i>In situ</i> visualization of proteins of interest at single cell level is attractive in cell biology, molecular biology and biomedicine, which usually involves photon, electron or X-ray based imaging methods. Herein, we report an optics-free strategy that images a specific protein in single cells by time of flight-secondary ion mass spectrometry (ToF-SIMS) following genetic incorporation of fluorine-containing unnatural amino acids as a chemical tag into the protein via genetic code expansion technique. The method was developed and validated by imaging GFP in E. coli and human HeLa cancer cells, and then utilized to visualize the distribution of chemotaxis protein CheA in E. coli cells and the interaction between high mobility group box 1 protein and cisplatin damaged DNA in HeLa cells. The present work highlights the power of ToF-SIMS imaging combined with genetically encoded chemical tags for <i>in situ </i>visualization of proteins of interest as well as the interactions between proteins and drugs or drug damaged DNA in single cells.</p><p></p>

scholarly journals Tracer Diffusion Coefficients of Li Ions in LixMn2O4 Thin Films Observed by Isotope Exchange Secondary Ion Mass Spectrometry

2020 ◽  
Vol 124 (42) ◽  
pp. 22981-22992
Author(s):  
Naoaki Kuwata ◽  
Gen Hasegawa ◽  
Daiki Maeda ◽  
Norikazu Ishigaki ◽  
Takamichi Miyazaki ◽  
...  
Keyword(s):  
Mass Spectrometry ◽  
Thin Films ◽  
Diffusion Coefficients ◽  
Isotope Exchange ◽  
Secondary Ion Mass Spectrometry ◽  
Tracer Diffusion ◽  
Ion Mass Spectrometry ◽  
Tracer Diffusion Coefficients ◽  
Secondary Ion

An investigation of cobalt oxide based nanocrystalline thin films by secondary ion mass spectrometry

2001 ◽  
Vol 15 (17) ◽  
pp. 1621-1624 ◽  
Author(s):  
Simona Barison ◽  
Davide Barreca ◽  
Sergio Daolio ◽  
Monica Fabrizio ◽  
Eugenio Tondello
Keyword(s):  
Mass Spectrometry ◽  
Thin Films ◽  
Cobalt Oxide ◽  
Secondary Ion Mass Spectrometry ◽  
Ion Mass Spectrometry ◽  
Secondary Ion ◽  
Nanocrystalline Thin Films

scholarly journals In Situ Correlative Microscopy Combining Transmission Electron Microscopy and Secondary Ion Mass Spectrometry

2018 ◽  
Vol 24 (S1) ◽  
pp. 380-381 ◽  
Author(s):  
Santhana Eswara ◽  
Lluis Yedra ◽  
Alisa Pshenova ◽  
Varun Sarbada ◽  
Jean-Nicolas Audinot ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Mass Spectrometry ◽  
Transmission Electron Microscopy ◽  
Secondary Ion Mass Spectrometry ◽  
Correlative Microscopy ◽  
Transmission Electron ◽  
Ion Mass Spectrometry ◽  
Secondary Ion

scholarly journals Triple Oxygen Isotope Measurements by Multi-Collector Secondary Ion Mass Spectrometry

2021 ◽  
Vol 8 ◽  
Author(s):  
Nordine Bouden ◽  
Johan Villeneuve ◽  
Yves Marrocchi ◽  
Etienne Deloule ◽  
Evelyn Füri ◽  
...  
Keyword(s):  
Mass Spectrometry ◽  
Oxygen Isotope ◽  
Spatial Resolution ◽  
Secondary Ion Mass Spectrometry ◽  
Small Radius ◽  
Large Radius ◽  
Ion Mass Spectrometry ◽  
Secondary Ion ◽  
Isotope Measurements

Secondary ion mass spectrometry (SIMS) is a powerful technique for in situ triple oxygen isotope measurements that has been used for more than 30 years. Since pioneering works performed on small-radius ion microprobes in the mid-80s, tremendous progress has been made in terms of analytical precision, spatial resolution and analysis duration. In this respect, the emergence in the mid-90s of the large-radius ion microprobe equipped with a multi-collector system (MC-SIMS) was a game changer. Further developments achieved on CAMECA MC-SIMS since then (e.g., stability of the electronics, enhanced transmission of secondary ions, automatic centering of the secondary ion beam, enhanced control of the magnetic field, 1012Ω resistor for the Faraday cup amplifiers) allow nowadays to routinely measure oxygen isotopic ratios (18O/16O and 17O/16O) in various matrices with a precision (internal error and reproducibility) better than 0.5‰ (2σ), a spatial resolution smaller than 10 µm and in a few minutes per analysis. This paper focuses on the application of the MC-SIMS technique to the in situ monitoring of mass-independent triple oxygen isotope variations.

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