Optical and Electronic Characterization of a-SiGe:H Thin Films Prepared by a Novel Hollow Cathode Deposition Technique

2004 ◽  
Vol 808 ◽  
Author(s):  
R. J. Soukup ◽  
N. J. Ianno ◽  
Scott A. Darveau ◽  
Christopher L. Exstrom
Keyword(s):  
Thin Films ◽  
Hollow Cathode ◽  
Secondary Ion Mass Spectrometry ◽  
Dark Conductivity ◽  
Cathode Plasma ◽  
Glass Substrates ◽  
Elemental Analyses ◽  
Silicon And Germanium ◽  
Secondary Ion

ABSTRACTUsing a novel hollow cathode plasma-jet reactive sputtering system in which an intense plasma, ignited in an Ar/H2 flow, is directed through silicon and germanium nozzles, a series of a-SiGe:H thin films have been prepared on silicon and glass substrates. These films have been optically characterized by infrared (IR) spectroscopy and spectroscopic ellipsometry (335-1000nm). Total hydrogen concentrations, as determined by FTIR, varied with deposition conditions and ranged from 2.5 × 1021 to 1.6 × 1022 atom cm−3 and correlated with secondary ion mass spectrometry (SIMS) elemental analyses to within 10%. Conductivity measurements in the dark and under simulated AM1 solar illumination have indicated that the films properties are very good. The light to dark conductivity ratio has consistently been greater than 1000 for films with band gaps down to 1.3 eV.

Ultra Shallow Depth Profiling with SIMS

2008 ◽  
Vol 573-574 ◽  
pp. 197-205 ◽  
Author(s):  
H. Ulrich Ehrke
Keyword(s):  
Mass Spectrometry ◽  
Thin Films ◽  
Secondary Ion Mass Spectrometry ◽  
Diffusion Processes ◽  
Depth Profiling ◽  
Semiconductor Technology ◽  
Technology Standard ◽  
Secondary Ion ◽  
Analytical Requirements

Secondary Ion Mass Spectrometry (SIMS) is frequently used in the characterization of thin films, coatings, diffusion processes, materials composition and in the analysis of implants. The SIMS technique has been continuously developed for more than 30 years. One of the main drivers was semiconductor technology. Standard implants in Si like B, As and P, implanted with a few keV to MeV energy are routinely measured with high precision. But nowadays with implant energies of 500 eV and below, when ultra shallow structures are examined, the desired information is in the first few nm to some tens of nm. This has a great impact on the analytical requirements and quantification procedures. Some of these aspects will be examined in this contribution.

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