Growth and Characterization of ZnO Nanonail

2004 ◽  
Vol 829 ◽  
Author(s):  
H. W. Seo ◽  
D. Wang ◽  
Y. Tzeng ◽  
N. Sathitsuksanoh ◽  
C. C. Tin ◽  
...  
Keyword(s):  
Vapor Deposition ◽  
Chemical Vapor ◽  
Wide Band ◽  
Processing Parameters ◽  
Photoluminescence Spectroscopy ◽  
X Ray Diffraction ◽  
Wide Band Gap ◽  
X Ray ◽  
Thermal Chemical Vapor Deposition

ABSTRACTZinc oxide (ZnO) is an interesting material for short-wavelength optoelectronics due to its wide band gap. The nanostructures of ZnO are also intriguing since a variety of morphology can be obtained by employing different processing parameters. In our laboratory, ZnO nanonails were successfully synthesized at low temperature using a thermal chemical vapor deposition. The morphology of the sample was studied by using scanning electron microscopy. The shape of the nail head can be controlled from hexagon to quasi-circular shape. X-ray diffraction, Raman scattering, photoluminescence spectroscopy were also performed to analyze the ZnO nanonail. Photoluminescence spectroscopy suggested that the defects in the ZnO nanonail and nanobone are of different nature.

Growth of Single Crystalline ZnO Nanotubes and Nanosquids

2007 ◽  
Vol 1057 ◽  
Author(s):  
Abhishek Prasad ◽  
Samuel Mensah ◽  
Jiesheng Wang ◽  
Archana Pandey ◽  
Yoke Khin Yap
Keyword(s):  
Vapor Deposition ◽  
Self Assembly ◽  
Chemical Vapor ◽  
Zno Nanostructures ◽  
X Ray ◽  
Thermal Chemical Vapor Deposition ◽  
Crystal Growth Mechanism ◽  
Zno Nanotubes ◽  
Solid Crystal

ABSTRACTThe growth of ZnO nanotubes and nanosquids is obtained by conventional thermal chemical vapor deposition (CVD) without the use of catalysts or templates. Characterization of these ZnO nanostructures was conducted by X-ray powder diffraction (XRD), Field-emission scanning electron microscopy (FESEM), Raman spectroscopy, and photoluminescence (PL). Results indicate that these ZnO nanostructures maintain the crystalline structures of the bulk wurtzite ZnO crystals. Our results show that rapid cooling can be used to induce the formation of ZnO nanotubes and ZnO nanosquids. The self-assembly of these novel ZnO nanostructures are guided by the theory of nucleation and the vapor-solid crystal growth mechanism.

Characterization of Epitaxial Pb(Zrx,Ti1-x)O3 Thin Films with Composition Near the Morphotropic Phase Boundary

2002 ◽  
Vol 748 ◽  
Author(s):  
Keisuke Saito ◽  
Toshiyuki Kurosawa ◽  
Takao Akai ◽  
Shintaro Yokoyama ◽  
Hitoshi Morioka ◽  
...  
Keyword(s):  
Thin Films ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Composition Range ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
Reciprocal Space Mapping ◽  
Pzt Thin Films ◽  
X Ray

ABSTRACT200-nm-thick Pb(Zrx,Ti1-x)O3 (PZT) thin films with zirconium composition in the range from 0% to 65% were epitaxially grown on (001)c SrRuO3 (SRO)//SrTiO3 (STO) single crystal substrates by pulsed metalorganic chemical vapor deposition (pulsed MOCVD). Constituent crystallographic phases were characterized by high-resolution X-ray diffraction reciprocal space mapping. It was found that PZT thin films having zirconium composition from 45% to 60% show mixed tetragonal and pseudocubic phases and their lattice parameters remained constant in this composition range.

scholarly journals Synthesis and characterization of carbon nanospheres by catalytic CVD method

2018 ◽  
Vol 15 (35) ◽  
pp. 75-82
Author(s):  
Kadhim Rashid Gbashi
Keyword(s):  
Vapor Deposition ◽  
Chemical Vapor ◽  
Carbon Spheres ◽  
X Ray Diffraction ◽  
Carbon Nanospheres ◽  
Iron Cobalt ◽  
X Ray ◽  
Cvd Method ◽  
Metallic Catalyst

Carbon nanospheres (CNSs) were successfully prepared and synthesized by Catalytic Chemical Vapor Deposition (CCVD) by using camphor as carbon source only, over iron Cobalt (Fe-Co) saturated zeolite at temperature between (700 oC and 900 °C), with different concentrations of camphor, and reaction time. The synthesized CNSs were characterized using Scanning Electron Microscopy (SEM), X-ray diffraction spectroscopy (XRD), and Fourier Transform Infrared (FTIR). The carbon spheres in different sizes between 100 nm and 1000 nm were investigated. This work has done by two parts, first preparation of the metallic catalyst and second part formation CNSs by heat treatment.

Preparation and Characterization of a- and b-Axis-Oriented Epitaxially Grown Bi4Ti3O12-Based Thin Films on Rutile-Type Oxides

2001 ◽  
Vol 688 ◽  
Author(s):  
Takayuki Watanabe ◽  
Keisuke Saito ◽  
Minoru Osada ◽  
Hiroshi Funakubo
Keyword(s):  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Remanent Polarization ◽  
Rf Sputtering ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
Rutile Structure ◽  
X Ray ◽  
Conductive Materials

Abstracta- and b-axis-oriented epitaxial Bi4Ti3O12 films were prepared on (101)TiO2 substrates (rutile) at 600°C by metalorganic chemical vapor deposition (MOCVD). Subsequently, the same films were similarly prepared on (101)-oriented conductive materials with the same rutile structure and similar lattice parameters as TiO2, such as RuO2 and IrO2. Their perfect epitaxial growth was confirmed by several X-ray diffraction measurements. RuO2 and IrO2 were deposited on not only structurally equivalent (101)RuO2//(101)TiO2 and (101)IrO2//(101)TiO2 structures, but were also successfully deposited on the corundum (012)Al2O3 and (110)Al2O3 single crystals by the MOCVD and rf-sputtering method, respectively. A well-saturated P-E hysteresis with a remanent polarization above 20 μC/cm2 was observed for a- and b-axis-oriented Bi4Ti3O12-based materials, (Bi4−xNdx)(Ti3−yVy)O12 (BNTV), that were epitaxially grown on rutile-rutile and rutile-corundum stacking structures. These results should enable broader application of the bismuth layer-structured ferroelectrics.

Growth and Characterization of Tungsten Oxide for Applications in Nanoelectronics

2006 ◽  
Vol 48 ◽  
pp. 113-118
Author(s):  
Karthikk Sridharan ◽  
Kenneth P. Roberts ◽  
Saibal Mitra
Keyword(s):  
Tungsten Oxide ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
Tungsten Filament ◽  
X Ray ◽  
Transmission Electron ◽  
Oxide Nanorods ◽  
Hot Filament

Tungsten oxide nanorods were prepared in a hot filament chemical vapor deposition (HFCVD) reactor. A mixture of gases containing hydrogen, oxygen or hydrogen and methane mixed with water vapor were passed into a quartz glass jar reactor and activated using a heated tungsten filament. The resulting deposits were characterized by transmission electron microscopy (TEM), x-ray diffraction (XRD), and Raman Spectroscopy. The deposit consisted of tungsten oxide nanorods (5 – 10 nm diameter and 50 – 75 nm long) and tungsten nanospheres with diameters of ~50nm. The tungsten oxide is then reduced to metallic tungsten by annealing in a hydrogen environment.

A study of texture in diamond films as functions of methane concentration during chemical vapor deposition and post-growth hydrogen treatment

1995 ◽  
Vol 10 (7) ◽  
pp. 1764-1771 ◽  
Author(s):  
D. Ganesana ◽  
S.C. Sharma
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Hydrogen Treatment ◽  
X Ray Diffraction ◽  
X Ray ◽  
Crystallographic Planes ◽  
Hot Filament

We have studied effects of hydrogen on texture in diamond films grown by hot filament assisted chemical vapor deposition by utilizing x-ray diffraction (XRD). We present results for the relative intensities of the XRD peaks originating from the (111). (220), and (400) crystallographic planes as functions of CH4/H2 makeup during growth and post-growth H2 treatment of the films. The texture of the films can be controlled by varying composition of the CH4/H2 mixture during growth and also by subjecting films to hydrogen treatment. The complementary characterization of these films by XRD, Raman spectroscopy, and positron annihilation techniques exemplifies a correlation among film texture, diamond contcnt, and dcnsity of the microvoids in the films.

Characterization of Silicon Carbide Grown on RB-SiC by Chemical Vapor Deposition

2010 ◽  
Vol 434-435 ◽  
pp. 499-501 ◽  
Author(s):  
Fan Tao Meng ◽  
Shan Yi Du ◽  
Gui Shan Tian ◽  
Yu Min Zhang
Keyword(s):  
Silicon Carbide ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Deposition Temperature ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
X Ray ◽  
Sic Whiskers ◽  
Deposition Conditions

Silicon carbide is one of the best materials for satellite mirror and chemical vapor deposition (CVD) is an effective method of preparing SiC whiskers and films. In this paper, SiC whiskers or films were deposited on substrates of RB-SiC in an upright chemical vapor deposition furnace of Φ150mm × 450 mm with methyltrichloride silicane (MTS) as precursor gas and H2 as carrier gas under dilute gases of different H2/Ar ratio and different deposition temperature between 1050°C and 1150°C. The morphology and composition of the CVD-SiC grown on RB-SiC substrate were determined by scanning electron microscope (SEM) and X-ray diffraction (XRD) respectively. As a result, whisker-like, worm-like or ball-like SiC can be respectively obtained dependent on different deposition conditions such as H2/Ar ratio and deposition temperature, and the composition of the productions are determined as β-SiC by XRD. Furthermore, the deposition mechanisms of different morphologies of SiC are introduced.

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