Analysis of growth rate of silicon nanowires

2004 ◽  
Vol 832 ◽  
Author(s):  
J. Kikkawa ◽  
Y. Ohno ◽  
S. Takeda
Keyword(s):  
Growth Rate ◽  
Chemical Vapor Deposition ◽  
Silicon Nanowires ◽  
Growth Temperature ◽  
Vapor Deposition ◽  
Critical Diameter ◽  
Chemical Vapor ◽  
Diameter Range

ABSTRACTWe have measured the growth rate of silicon nanowires (SiNWs) in the diameter range of 3 to 40 nm (8.4 nm on average), which were grown by chemical vapor deposition (CVD) at temperatures between 365 °C and 495 °C. It is found that SiNWs with smaller diameters grow slower than those with larger ones, and a critical diameter at which growth stops completely exists. The growth rate of the thinner SiNWs stronger depends on growth temperature than that of thicker ones in previous studies. We discuss the dependence by thermodynamics theory.

Quality and Growth Rate of Hot-wire Chemical Vapor Deposition Epitaxial Si Layers

2008 ◽  
Vol 1066 ◽  
Author(s):  
Charles W Teplin ◽  
Ina T. Martin ◽  
Kim M. Jones ◽  
David Young ◽  
Manuel J. Romero ◽  
...  
Keyword(s):  
Growth Rate ◽  
Chemical Vapor Deposition ◽  
Epitaxial Growth ◽  
Growth Phase ◽  
Growth Temperature ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Hot Wire ◽  
High Carrier ◽  
Substrate Temperatures

ABSTRACTFast epitaxial growth of several microns thick Si at glass-compatible temperatures by the hot-wire CVD technique is investigated, for film Si photovoltaic and other applications. Growth temperature determines the growth phase (epitaxial or disordered) and affects the growth rate, possibly due to the different hydrogen coverage. Stable epitaxy proceeds robustly in several different growth chemistry regimes at substrate temperatures above 600°C. The resulting films exhibit low defect concentrations and high carrier mobilities.

Homoepitaxial Growth of 4H-SiC by Hot-Wall CVD Using BTMSM

2008 ◽  
Vol 600-603 ◽  
pp. 151-154 ◽  
Author(s):  
Han Seok Seo ◽  
Ho Geun Song ◽  
Jeong Hyun Moon ◽  
Jeong Hyuk Yim ◽  
Myeong Sook Oh ◽  
...  
Keyword(s):  
Growth Rate ◽  
Chemical Vapor Deposition ◽  
Flow Rate ◽  
Growth Temperature ◽  
Vapor Deposition ◽  
Doping Level ◽  
Chemical Vapor ◽  
Homoepitaxial Growth ◽  
Background Doping ◽  
Source Flow

Homoepitaxial growth of 4H-SiC epilayer by hot-wall chemical vapor deposition using bis-trimethylsilylmethane (BTMSM, C7H20Si2) precursor was investigated. The growth rate of 4H-SiC was investigated as a function of the growth temperature and source flow rate. The FWHM values of epilayers as the growth temperature and source flow rate also investigated. The growth rate of 4H-SiC epilayer grown by hot-wall CVD was 3.0 μm/h and the background doping level of 4H-SiC epilayer was mid 1015/cm3.

1.3 νm InAs/GaAs Quantum Dots Directly CappedWith GaAs Grown By Metal Organic Chemical Vapor Deposition

2003 ◽  
Vol 775 ◽  
Author(s):  
K.F. Huang ◽  
T.P. Hsieh ◽  
N.T. Yeh ◽  
W.J. Ho ◽  
J.I. Chyi ◽  
...  
Keyword(s):  
Growth Rate ◽  
Quantum Dots ◽  
Chemical Vapor Deposition ◽  
Growth Temperature ◽  
Vapor Deposition ◽  
Room Temperature ◽  
Chemical Vapor ◽  
Peak Wavelength ◽  
Room Temperature Photoluminescence ◽  
Periodic Growth

AbstractSystematic studies of the growth temperature and growth rate effect of the formation of InAs/GaAs quantum dots (QDs) have been demonstrated. These QDs are formed with large InAs coverage (3.0 MLs) and periodic growth interruption via Strnski-Krastonov (S-K) epitaxial growth mode by using metalorganic chemical vapor deposition (MOCVD). The room temperature photoluminescence (PL) spectra show red-shift of peak wavelength by decreasing the InAs growth temperature from 540°C to 500°C. As growth rate increases from 0.05 ML/s to 0.2 ML/s at growth temperature of 500°C, PL linewidth could be narrowed and emission intensity could be increased. These results could be correlated to the In clusters and uniformity of InAs/GaAs QDs observed by scanning electron microscopy (SEM) image. Finally, the room temperature photoluminescence spectra of InAs/GaAs QDs directly capped with GaAs shows peak wavelength of 1.35 μm with narrow linewidth of 30.8 meV is obtained.

scholarly journals Unusual Dependence of the Diamond Growth Rate on the Methane Concentration in the Hot Filament Chemical Vapor Deposition Process

Materials ◽  
2021 ◽  
Vol 14 (2) ◽  
pp. 426
Author(s):  
Byeong-Kwan Song ◽  
Hwan-Young Kim ◽  
Kun-Su Kim ◽  
Jeong-Woo Yang ◽  
Nong-Moon Hwang
Keyword(s):  
Growth Rate ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Methane Concentration ◽  
Chemical Vapor ◽  
Diamond Growth ◽  
Lower Growth ◽  
Filament Temperature ◽  
Diamond Phase ◽  
Hot Filament

Although the growth rate of diamond increased with increasing methane concentration at the filament temperature of 2100 °C during a hot filament chemical vapor deposition (HFCVD), it decreased with increasing methane concentration from 1% CH4 –99% H2 to 3% CH4 –97% H2 at 1900 °C. We investigated this unusual dependence of the growth rate on the methane concentration, which might give insight into the growth mechanism of a diamond. One possibility would be that the high methane concentration increases the non-diamond phase, which is then etched faster by atomic hydrogen, resulting in a decrease in the growth rate with increasing methane concentration. At 3% CH4 –97% H2, the graphite was coated on the hot filament both at 1900 °C and 2100 °C. The graphite coating on the filament decreased the number of electrons emitted from the hot filament. The electron emission at 3% CH4 –97% H2 was 13 times less than that at 1% CH4 –99% H2 at the filament temperature of 1900 °C. The lower number of electrons at 3% CH4 –97% H2 was attributed to the formation of the non-diamond phase, which etched faster than diamond, resulting in a lower growth rate.

The Effect of Catalyst on Carbon Nanotubes (CNTs) Synthesized by Catalytic Chemical Vapor Deposition (CVD) Technique

2011 ◽  
Vol 364 ◽  
pp. 232-237 ◽  
Author(s):  
S.Y. Lim ◽  
M.M. Norani
Keyword(s):  
Carbon Nanotubes ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Dry Etching ◽  
Wet Etching ◽  
Etching Time ◽  
Catalytic Chemical Vapor Deposition ◽  
Catalyst Pretreatment ◽  
Diameter Range

Catalyst plays a crucial role in determining the characteristics of carbon nanotubes (CNTs) produced by using thermal catalytic chemical vapor deposition (CVD). It is essential to investigate how the catalyst preparation affects the characteristics of CNTs because certain application demands specific size for optimum performance. This study reports the effect of the types of catalyst and the duration of the catalyst pre-treatment (wet etching time, dry etching time and ball milling) on the diameter of CNTs. The synthesized CNTs samples were characterized by scanning and transmission electron microscopy and Raman spectroscopy. Wet etching (2M hydrofluoric acid) time was varied from 1 to 2.5 hrs and the diameter range was found to be in the range of 23 to 52 nm. The diameter range for CNTs produced for 3 hrs and 5 hrs of dry etching treatment (with ammonia gas) are 38 to 51 nm and 23 to 48 nm, respectively. The diameter size of CNTs produced using Ni (14 to 25 nm) was found to be smaller than Fe (38 to 51 nm). There is a significant decrease in the diameter of CNTs by prolonging the wet etching period. Shorter and curly shaped CNTs can also be obtained by using Ni as the catalyst. Keywords: chemical vapor deposition, carbon nanotubes, catalyst pretreatment

scholarly journals Passivation of high aspect ratio silicon nanowires by using catalytic chemical vapor deposition for radial heterojunction solar cell application

RSC Advances ◽  
2017 ◽  
Vol 7 (71) ◽  
pp. 45101-45106 ◽  
Author(s):  
Gangqiang Dong ◽  
Yurong Zhou ◽  
Hailong Zhang ◽  
Fengzhen Liu ◽  
Guangyi Li ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Aspect Ratio ◽  
Silicon Nanowires ◽  
Vapor Deposition ◽  
High Aspect Ratio ◽  
Chemical Etching ◽  
Chemical Vapor ◽  
Solar Cell Application ◽  
Catalytic Chemical Vapor Deposition ◽  
Metal Assisted Chemical Etching

High aspect ratio silicon nanowires (SiNWs) prepared by metal-assisted chemical etching were passivated by using catalytic chemical vapor deposition (Cat-CVD).

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