Crystal Structure and Thermoelectric Properties of Al-containing Re Silicides

2004 ◽  
Vol 842 ◽  
Author(s):  
Eiji Terada ◽  
Min-Wook Oh ◽  
Dang-Moon Wee ◽  
Haruyuki Inui
Keyword(s):  
Crystal Structure ◽  
Electrical Resistivity ◽  
Thermoelectric Properties ◽  
Binary Alloy ◽  
Defect Structure ◽  
Figure Of Merit ◽  
Defect Layer ◽  
Dimensionless Figure Of Merit ◽  
Maximum Value ◽  
Shear Structure

ABSTRACTThe microstructure, defect structure and thermoelectric properties of Al-containing ReSi1.75 based silicides have been investigated. All the Al-containing alloys investigated contain four differently oriented domains accompanied by the twinned microstructure, as the binary alloy does. However, thin defect layers containing a kind of shear structure are locally and sporadically formed at some of twin boundaries. In the defect layer, shear occurs by the vector of [100] on either (1 09) or (107) planes. Binary ReSi1.75 exhibits nice thermoelectric properties as exemplified by the high value of dimensionless figure of merit (ZT) of 0.70 at 800 °C when measured along [001], although the ZT value along [100] is just moderately high. Al-containing Re silicides considerably increase the ZT value along [100] so that the maximum value of 0.95 is achieved at 150 °C for the ReSi1.75Al0.02 alloy. The temperature dependence of electrical resistivity changes from of semiconductor for the binary alloy to of metal for the Al-added alloys and the value of electrical resistivity is significantly reduced when compared to the binary counterpart.

Effects of alloying elements on thermoelectric properties of ReSi1.75

2003 ◽  
Vol 793 ◽  
Author(s):  
Min Wook Oh ◽  
Jia-Jun Gu ◽  
Kosuke Kuwabara ◽  
Haruyuki Inui
Keyword(s):  
Electrical Resistivity ◽  
Temperature Dependence ◽  
Thermoelectric Property ◽  
Thermoelectric Properties ◽  
Binary Alloy ◽  
Figure Of Merit ◽  
The Other ◽  
Alloying Elements ◽  
Dimensionless Figure Of Merit ◽  
Other Hand

ABSTRACTS:The thermoelectric properties as well as microstructure of binary and some ternary ReSi1.75 have been investigated. Binary ReSi1.75 exhibits a nice thermoelectric property as exemplified by the high value of dimensionless figure of merit (ZT) of 0.70 at 800 °C when measured along [001], although the ZT value along [100] is just moderately high. Mo substitution for Re in ReSi1.75 considerably increases the ZT value along [001] because of the decreased electrical resistivity, while the property improvement is not significant along [100]. On the other hand, Al and Ge substitutions for Si in ReSi1.75 considerably increase the ZT value along [100]. This is also because of the decreased electrical resistivity. When Al is added to ReSi1.75, the value of electrical resistivity is significantly reduced when compared to the binary counterpart and the temperature dependence of electrical resistivity changes from of semiconductor for the binary alloy to of metal for the Al-added alloys.

Thermoelectric Properties of La-doped BaSi2 and (Ba,Sr)Si2 Solid Solutions

2007 ◽  
Vol 1044 ◽  
Author(s):  
Kohsuke Hashimoto ◽  
Ken Kurosaki ◽  
Hiroaki Muta ◽  
Shinsuke Yamanaka
Keyword(s):  
Thermal Conductivity ◽  
Solid Solution ◽  
Electrical Resistivity ◽  
Thermoelectric Properties ◽  
Figure Of Merit ◽  
Room Temperature ◽  
Dimensionless Figure Of Merit ◽  
Plasma Sintering ◽  
Spark Plasma ◽  
La Doped

AbstractWe studied the thermoelectric properties of BaSi2 and SrSi2. The polycrystalline samples were prepared by spark plasma sintering (SPS). The electrical resistivity (ρ), Seebeck coefficient (S), and thermal conductivity (κ) were measured above room temperature. The maximum values of the dimensionless figure of merit (ZT) were 0.01 at 954 K for BaSi2 and 0.09 at 417 K for SrSi2. We tried to enhance the ZT values of BaSi2 and SrSi2 by prepareing and characterizing La-doped BaSi2 and (Ba,Sr)Si2 solid solution.

Crystal structure and thermoelectric properties of ReSi1.75 silicide

2002 ◽  
Vol 753 ◽  
Author(s):  
J-J Gu ◽  
K. Kuwabara ◽  
K. Tanaka ◽  
H. Inui ◽  
M. Yamaguchi ◽  
...  
Keyword(s):  
Crystal Structure ◽  
Electron Microscopy ◽  
Thermoelectric Properties ◽  
First Principles ◽  
Figure Of Merit ◽  
First Principles Calculation ◽  
Dimensionless Figure Of Merit ◽  
Transmission Electron ◽  
P Type ◽  
Very High

ABSTRACTThe crystal structure of the defect disilicide formed with Re (ReSi1.75) has been refined by transmission electron microscopy combined with first-principles calculation. The crystal structure is monoclinic with the space group Cm (mc44) due to an ordered arrangement of vacancies on Si sites in the underlying (parent) C11b lattice. The thermoelectric properties of ReSi1.75 are highly anisotropic. Its electrical conduction is of n-type when measure along [001] while it is of p-type when measured along [100]. Although the value of Seebeck coefficient along [100] is moderately high (150–200 μV/K), it is very high along [001] (250–300 μV/K). As a result, a very high value of dimensionless figure of merit (ZT) of 0.7 is achieved at 1073 K when measured along [001].

Thermoelectric properties of the Al-TM-Si (TM = Mn, Re) 1/1-cubic approximant

2003 ◽  
Vol 805 ◽  
Author(s):  
Tsunehiro Takeuchi ◽  
Toshio Otagiri ◽  
Hiroki Sakagami ◽  
Uichiro Mizutani
Keyword(s):  
Thermal Conductivity ◽  
Electrical Resistivity ◽  
Thermoelectric Power ◽  
Thermoelectric Properties ◽  
Figure Of Merit ◽  
Room Temperature ◽  
Low Thermal Conductivity ◽  
Dimensionless Figure Of Merit

ABSTRACTThe electrical resistivity, thermoelectric power, and thermal conductivity were investigated for the Al71.6-xMn 17.4Six and Al71.6-xRe 17.4Six (7 ≤ x ≤ 12) 1/1-cubic approximants. A large thermoelectric power ranging from -40 to 90 μV/K and a low thermal conductivity less than 3 W/K·cm were observed at room temperatures. The electrical resistivity at room temperature for these approximants was kept below 4,000 μΩcm, that is much smaller than that in the corresponding quasicrystals. As a result of the large thermoelectric power, the low thermal conductivity, and the low electrical resistivity, large dimensionless figure of merit ZT = 0.10 (n-type) and 0.07 (p-type) were achieved for the Al71.6Re17.4Si11 and Al71.6Mn17.4Si11 at room temperature, respectively.

The thermoelectric properties of CoSb3 compound doped with Te and Sn synthesized at different pressure

2017 ◽  
Vol 31 (28) ◽  
pp. 1750261 ◽  
Author(s):  
Yiping Jiang ◽  
Xiaopeng Jia ◽  
Hongan Ma
Keyword(s):  
Thermal Conductivity ◽  
High Pressure ◽  
Electrical Resistivity ◽  
High Temperature ◽  
Seebeck Coefficient ◽  
Thermoelectric Properties ◽  
Figure Of Merit ◽  
Raw Materials ◽  
Absolute Value ◽  
Dimensionless Figure Of Merit

The skutterudite CoSb[Formula: see text]Te[Formula: see text]Sn[Formula: see text] compound was synthesized successfully by high pressure and high temperature (HPHT) method using Co, Sb, Te and Sn powder as raw materials. The effects of pressure on its structure and the thermoelectric properties are investigated systematically from 300 K to 800 K. The electrical resistivity and the absolute value of the Seebeck coefficient for the sample increases with rising synthetic pressure. The thermal conductivity of the sample decreases with synthetic pressure and temperature rising in the range of 300–800 K. In this study, the maximum dimensionless figure of merit (ZT) value of 1.17 has been achieved at 793 K, 3 GPa for this thermoelectric material.

FEM Analysis on Thermoelectric Properties of Metal/TiO2–x Composites with Random Distribution of Metal Powder

2013 ◽  
Vol 750 ◽  
pp. 130-133
Author(s):  
Katsuhiro Sagara ◽  
Yun Lu ◽  
Dao Cheng Luan
Keyword(s):  
Thermal Conductivity ◽  
Electrical Resistivity ◽  
Seebeck Coefficient ◽  
Thermoelectric Properties ◽  
Power Factor ◽  
Figure Of Merit ◽  
Random Distribution ◽  
The Other ◽  
Dimensionless Figure Of Merit ◽  
Wide Range

Analysis model of finite element method with a random distribution for thermoelectric composites was built. Thermoelectric properties including electrical resistivity, Seebeck coefficient and thermal conductivity of M/TiO2–x (M = Cu, Ni, 304 stainless steel (304SS)) thermoelectric composites were investigated by the proposed model. Cu/TiO2–x composite showed a large decrease in electrical resistivity while 304SS/TiO2–x composite thermal conductivity was slightly increased. Calculated dimensionless figure-of-merit, ZT of Ni/TiO2–x composite was higher than those of TiO2–x and the other composites in a wide range of metal volume fractions because Ni has large absolute values of Seebeck coefficient, power factor and dimensionless figure-of-merit compared to the other two metals. It was found that power factor and dimensionless figure-of-merit of thermoelectric composites depended on the balance among electrical resistivity, thermal conductivity and Seebeck coefficient. The results revealed that it is important for M/TiO2–x composites to choose suitable addition metal with high power factor and dimensionless figure-of-merit.

Thermoelectric properties of Cu2Se/xNi0.85Se hot-pressed from hydrothermal synthesis nanopowders

2017 ◽  
Vol 31 (09) ◽  
pp. 1750093 ◽  
Author(s):  
Feng Gao ◽  
Xiaohan Du ◽  
Fang Wu ◽  
Xinjian Li ◽  
Xing Hu ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Electrical Resistivity ◽  
Hydrothermal Synthesis ◽  
Hydrothermal Method ◽  
Thermoelectric Properties ◽  
Figure Of Merit ◽  
Secondary Phase ◽  
Seebeck Coefficients ◽  
Maximum Value ◽  
Bulk Alloys

The [Formula: see text] ([Formula: see text] = 0, 0.025, 0.05, 0.075, 0.1, 0.15, 0.2, 0.3, 0.4 and 0.5) nanopowders were synthesized by the hydrothermal method and then were hot-pressed into bulk alloys. The effects of [Formula: see text] secondary phase on the thermoelectric (TE) properties of [Formula: see text] were investigated. For [Formula: see text] and [Formula: see text], both their electrical resistivity and Seebeck coefficients increase. While for [Formula: see text], they decrease instead. The samples for [Formula: see text] have lower thermal conductivity. However, for [Formula: see text], the thermal conductivity rises remarkably. As an overall result, the maximum value of dimensionless TE figure of merit (ZT) reaches 1.52 at 873 K for the sample of [Formula: see text], 36.5% higher than for the sample without [Formula: see text].

Influence of Cu Doping on the Thermoelectric Properties of Bi1.5Pb0.5Sr1.8La0.2Co2Oy

2013 ◽  
Vol 423-426 ◽  
pp. 593-596
Author(s):  
Qing Lin He ◽  
Zhan Ying Guo ◽  
Xing Hu ◽  
Hong Zhang Song
Keyword(s):  
Electrical Resistivity ◽  
Thermoelectric Properties ◽  
Figure Of Merit ◽  
Solid State Reaction Method ◽  
Electric Transport ◽  
Cu Doping ◽  
Seebeck Coefficients ◽  
Dimensionless Figure Of Merit ◽  
Element Doping ◽  
Properties Of Materials

Cu doped Bi1.5Pb0.5Sr1.8La0.2Co2-xCuxOy(x = 0.0, 0.2, 0.4) samples were prepared through the solid state reaction method. The influence of different Cu doping contents on electrical resistivity, Seebeck coefficients, thermal conductivity, and the dimensionless figure of meritZTwas investigated. All the samples of Cu concentration 0.4 are single phases. The electrical resistivity of Bi1.5Pb0.5Sr1.8La0.2Co1.8Cu0.2Oydescends, and itsZTvalues are enhanced obviously. The results show that suitable element doping can modify the electric transport properties and enhance thermoelectric properties of materials.

scholarly journals Bipolar doping and thermoelectric properties of Zintl arsenide Eu5In2As6

2021 ◽  
Author(s):  
Naoki Tomitaka ◽  
Yosuke Goto ◽  
Kota Morino ◽  
Kazuhisa Hoshi ◽  
Yuki Nakahira ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Electrical Resistivity ◽  
Thermoelectric Properties ◽  
High Performance ◽  
Figure Of Merit ◽  
Lattice Thermal Conductivity ◽  
High Resistivity ◽  
Dimensionless Figure Of Merit ◽  
Recent Developments ◽  
P Type

Zintl compounds exhibit promising thermoelectric properties because of the feasibility of the chemical tuning of their electrical and thermal transport. While most Zintl pnictides are known to show p-type polarity, recent developments in high-performance n-type Mg3Sb2-based thermoelectric materials have encouraged further identification of n-type Zintl pnictides. In this study, we demonstrate the bipolar dopability of the Zintl arsenide Eu5In2As6. The electrical resistivity at 300 K with n-type polarity was decreased to 7.6 x 10^-1 ohmcm using La as an electron dopant. In contrast to the relatively high resistivity of n-type Eu5In2As6, the p-type resistivity at 300 K was decreased to 5.9 x 10^-3 ohmcm with a carrier concentration of 2.8 x 10^20 /cm3 using Zn as a hole dopant. This doping asymmetry is discussed in terms of the weighted mobility of electrons and holes. Furthermore, a very low lattice thermal conductivity of 0.7 W/mK was observed at 773 K, which is comparable to that of the Sb-containing analogue Eu5In2Sb6. The dimensionless figure of merit ZT = 0.29 at 773 K for Zn-doped p-type Eu5In2As6. This study shows that bipolar dopable Eu5In2As6 can be a platform to facilitate a better understanding of the doping asymmetry in Zintl pnictides.

Enhanced thermoelectric properties of the hole-doped Bi2−xKxSr2Co2Oy ceramics

2015 ◽  
Vol 29 (28) ◽  
pp. 1550192 ◽  
Author(s):  
Feng Gao ◽  
Qinglin He ◽  
Ruijuan Cao ◽  
Fang Wu ◽  
Xing Hu ◽  
...  
Keyword(s):  
Electrical Resistivity ◽  
Thermoelectric Properties ◽  
Figure Of Merit ◽  
Solid State Reaction Method ◽  
Undoped Sample ◽  
Seebeck Coefficients ◽  
Maximum Value ◽  
Element Doping ◽  
P Type ◽  
Remarkable Reduction

In this paper, the influence of K element doping on the thermoelectric properties of the [Formula: see text] (x = 0.00, 0.05, 0.10, 0.15, and 0.20) samples prepared by the solid-state reaction method were investigated from 333 K to 973 K. It was shown that due to the p-type K doping the electrical resistivity of the doped sample can be reduced remarkably as compared with the undoped sample, especially for the optimum doped sample [Formula: see text]. The Seebeck coefficients of the K doped samples have only a slight decrease as compared with the undoped sample. As a result of the remarkable reduction of the electrical resistivity the power factor of the doped sample have a significant improvement. The thermal conductivity of the samples is depressed due to the defects caused by K doping. As an overall result, the dimensionless figure of merit (ZT) of the [Formula: see text] sample reaches a maximum value of 0.3 at 973 K, being 93% higher than that of the undoped sample.

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