Electrolyte-Gate a-Si:H Thin Film Transistors

AbstractThis paper presents the fabrication and characterization of electrolyte-gate (EG) hydrogenated amorphous silicon (a-Si:H) thin film transistors (TFTs). In these devices, the metal gate is replaced by a Pt electrode immersed in an electrolyte. The source-drain current of these devices is modulated by the voltage applied through the Pt electrode. Device characteristics are compared with structurally equivalent top-gate a-Si:H TFTs. The EG devices show higher mobility and smaller subthreshold slope than their counterparts with metal gate and work in a narrower voltage range. EG-TFTs show chemical sensitivity, illustrated by a voltage shift in the transfer curve as a consequence of pH variation. The sensitivity of the devices to pH is different depending on whether the top layer in contact with the electrolyte is SiO2 or SiNx.

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P-channel Polycrystalline Silicon Thin Film Transistors on Steel Foil Substrates

MRS Proceedings ◽

10.1557/proc-664-a17.2 ◽

2001 ◽

Vol 664 ◽

Cited By ~ 2

Author(s):

Ming Wu ◽

Sigurd Wagner

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Polycrystalline Silicon ◽

Field Effect ◽

Drain Current ◽

Silicon Thin Film ◽

Polysilicon Films ◽

Source Voltage ◽

Steel Substrates ◽

Hydrogenated Amorphous

ABSTRACTWe fabricated self-aligned polycrystalline silicon (polysilicon) thin film transistors on flexible steel substrates. The polysilicon was formed by furnace crystallization of hydrogenated amorphous silicon at 950°C/20sec or 750°C/2min. The TFTs made from these polysilicon films have hole field effect mobilities in the linear regime of 22 cm2·V−1s−1 (950°C) and 14 cm2·V−1s−1 (750°C). The OFF current at 10 V drain-source voltage is 10−10A and the drain current ON/OFF ratio is ∼106.

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Analysis of Defect‐Related Source‐Drain Current in Hydrogenated Amorphous Silicon Thin‐Film Transistors

Journal of The Electrochemical Society ◽

10.1149/1.2085499 ◽

1991 ◽

Vol 138 (12) ◽

pp. 3777-3783

Author(s):

Akira Sanjoh ◽

Naoki Ikeda ◽

Kenji Komaki

Keyword(s):

Thin Film ◽

Amorphous Silicon ◽

Thin Film Transistors ◽

Hydrogenated Amorphous Silicon ◽

Drain Current ◽

Silicon Thin Film ◽

Hydrogenated Amorphous

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Drain current reduction by source electrode overlap in hydrogenated amorphous silicon thin‐film transistors

Journal of Applied Physics ◽

10.1063/1.357866 ◽

1994 ◽

Vol 76 (12) ◽

pp. 8150-8154

Author(s):

Shuichi Uchikoga ◽

Masahiko Akiyama ◽

Takashi Koizumi ◽

Masahiro Tada ◽

Mitsushi Ikeda ◽

...

Keyword(s):

Thin Film ◽

Amorphous Silicon ◽

Thin Film Transistors ◽

Hydrogenated Amorphous Silicon ◽

Drain Current ◽

Silicon Thin Film ◽

Current Reduction ◽

Hydrogenated Amorphous ◽

Source Electrode

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Effects of electro-mechanical stressing on the electrical characterization of on-plastic a-Si:H thin film transistors

MRS Proceedings ◽

10.1557/proc-1153-a20-02 ◽

2009 ◽

Vol 1153 ◽

Cited By ~ 1

Author(s):

Jian Z. Chen ◽

Yeh Chih-Yong ◽

I-Chung Chiu ◽

I-Chun Cheng ◽

Jung-Jie Huang ◽

...

Keyword(s):

Thin Film ◽

Mechanical Stress ◽

Thin Film Transistors ◽

Compressive Strain ◽

Electrical Characterization ◽

Gate Bias ◽

Hydrogen Atoms ◽

Silicon Thin Film ◽

Hydrogenated Amorphous

AbstractWe analyzed the effect of electromechanical stressing on the electrical characteristics of hydrogenated amorphous silicon thin-film transistors. It had been shown that the TFTs, fabricated at 150 °C, respond to tension/compression by a rise/fall in electron mobility. In TFTs fabricated using the same process, a slight shift of threshold voltage was observed under prolonged high compressive strain and the gate leakage current slightly increases after ˜2% compressive strain. In general, the change of TFT performance due to pure mechanical straining is small in comparison to electrical gate-bias stressing. From the comparison among Maxwell stress (induced by electrical gate-bias stressing), mechanical stress (applied by bending), and drifting electrical force for passivated hydrogen atom, the most significant cause for the change of electrical characterization of a-Si:H TFTs should be the trapping charges inside the dielectric, under combined electrical and mechanical stressing. The mechanical stress does not act on Si-H bonds to drift hydrogen atoms, while it is mainly balanced by the rigid Si-Si networks in a-Si:H or a-SiNx. Therefore, mechanical stress has very little effect on the instability of low temperature processed a-Si:H TFTs.

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Effect of Illumination on Organic Polymer Thin-Film Transistors

MRS Proceedings ◽

10.1557/proc-771-l10.17 ◽

2003 ◽

Vol 771 ◽

Cited By ~ 3

Author(s):

Michael C. Hamilton ◽

Sandrine Martin ◽

Jerzy Kanicki

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Drain Current ◽

Charge Carriers ◽

Electrical Performance ◽

Organic Polymer ◽

Light Illumination ◽

Polymer Thin Film ◽

Channel Region ◽

White Light Illumination

AbstractWe have investigated the effects of white-light illumination on the electrical performance of organic polymer thin-film transistors (OP-TFTs). The OFF-state drain current is significantly increased, while the drain current in the strong accumulation regime is relatively unaffected. At the same time, the threshold voltage is decreased and the subthreshold slope is increased, while the field-effect mobility of the charge carriers is not affected. The observed effects are explained in terms of the photogeneration of free charge carriers in the channel region due to the absorbed photons.

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Fabrication and Characterization of Cadmium Telluride based thin Film Transistors

SOP Transactions on Applied Physics ◽

10.15764/aphy.2014.02009 ◽

2014 ◽

Vol 2014 (2) ◽

pp. 74-80

Author(s):

M. G. Mahesha ◽

Keyword(s):

Thin Film ◽

Cadmium Telluride ◽

Thin Film Transistors ◽

Fabrication And Characterization

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Wide range modulation of synaptic weight in thin-film transistors with hafnium oxide gate insulator and indium-zinc oxide channel layer for artificial synapse application

Nanoscale ◽

10.1039/d1nr02911h ◽

2021 ◽

Author(s):

Keonwon Beom ◽

Jimin Han ◽

Hyun-Mi Kim ◽

Tae-Sik Yoon

Keyword(s):

Thin Film ◽

Zinc Oxide ◽

Thin Film Transistors ◽

Hafnium Oxide ◽

Synaptic Weight ◽

Drain Current ◽

Gate Insulator ◽

Channel Layer ◽

Indium Zinc Oxide ◽

Wide Range

Wide range synaptic weight modulation with a tunable drain current was demonstrated in thin-film transistors (TFTs) with a hafnium oxide (HfO2−x) gate insulator and an indium-zinc oxide (IZO) channel layer...

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