Plasma-assisted Atomic Layer Deposition of TiN Films at low Deposition Temperature for High-aspect Ratio Applications

AbstractA plasma-assisted atomic layer deposition (PA-ALD) process of titanium nitride (TiN) using TiCl4 precursor dosing and H2/N2 plasma exposure is presented. In situ spectroscopic ellipsometry revealed a growth rate at 400 °C of ∼0.7 A/cycle independent of precursor dosing. Varying the plasma exposure time changed the stoichiometry [N]/[Ti] of the films within the range ∼0.93-1.15. At 100 °C a relatively low chlorine impurity level (∼2 at. %) and low resistivity (∼200 νΔcm) were obtained for a ∼45 nm thick film. The growth rate was found to be considerably lower (∼0.3 Å/cycle) at this temperature. Using TEM imaging we found that PAALD TiN films can be deposited conformally in 20:1 aspect-ratio features (1.5 Êm width) but that the step coverage still needs to be improved, probably by a prolonged plasma exposure step.

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Atomic Layer Deposition of Molybdenum Oxide for Solar Cell Application

Applied Mechanics and Materials ◽

10.4028/www.scientific.net/amm.492.375 ◽

2014 ◽

Vol 492 ◽

pp. 375-379 ◽

Cited By ~ 8

Author(s):

Dip K. Nandi ◽

Shaibal K. Sarkar

Keyword(s):

Growth Rate ◽

Atomic Layer Deposition ◽

Molybdenum Oxide ◽

Atomic Layer ◽

Maximum Growth ◽

Maximum Growth Rate ◽

Solar Cell Application ◽

Layer Deposition ◽

Temperature Window

This work focuses on synthesis of molybdenum oxide (MoO3) by Atomic layer deposition (ALD) using molybdenum hexacarbonyl [Mo (CO)6] and ozone. In-situ growth characteresticswerestudied by Quartz Crystal Microbalance (QCM). ALD temperature window for this material lies between 165 to 175°C giving a maximum growth rate of 0.45 Å per ALD cycle. Negligible nucleation was found by QCM studyindicating a linear growth of the film. Effect of different oxidants on the growth rate is also studied.As-deposited film is amorphous in nature which converts to monoclinic-MoO3 after annealing as seen by taransmission electron microscopy.

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Atomic layer deposition of Al2O3 on GaSb using in situ hydrogen plasma exposure

Applied Physics Letters ◽

10.1063/1.4768693 ◽

2012 ◽

Vol 101 (23) ◽

pp. 231601 ◽

Cited By ~ 39

Author(s):

Laura B. Ruppalt ◽

Erin R. Cleveland ◽

James G. Champlain ◽

Sharka M. Prokes ◽

J. Brad Boos ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Hydrogen Plasma ◽

Atomic Layer ◽

Plasma Exposure ◽

Layer Deposition

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Atomic Layer Deposition of TiN on Si (100) and (111) Substrates

MRS Proceedings ◽

10.1557/proc-616-211 ◽

2000 ◽

Vol 616 ◽

Cited By ~ 2

Author(s):

Hyeongtag Jeon ◽

Jae-Hyoung Koo ◽

June-Woo Lee ◽

Young-Seok Kim ◽

K. M. Kang ◽

...

Keyword(s):

Growth Rate ◽

Atomic Layer Deposition ◽

Atomic Layer ◽

Columnar Structure ◽

Direct Reaction ◽

Tin Films ◽

Tin Film ◽

Layer Deposition ◽

Purge Gas ◽

Experimental Values

AbstractTitanium nitride (TiN) films were successfully deposited on ρ-type Si (100) and (111) substrates by atomic layer deposition (ALD) method at 450°C. In this ALD system, the TiCl4 and NH3 gases were supplied, separately and Ar purge gas was added between the source and reactant gases to suppress the direct reaction. The main purpose of this study is to investigate the properties of TiN film grown by ALD method. To investigate the growth mechanism, the growth model of TiN was suggested for the calculation of growth rate per cycle with Cerius program. The results of calculation by the model were compared with experimental values of the TiN film deposited by ALD method. TiN films deposited on Si (100) and (111) substrates were examined by TEM and showed the randomly oriented columnar structure. The thickness of TIN film deposited on Si(111) substrate was slightly thicker than that of TiN film deposited on Si(100) substrate. Chlorine content in both TiN films was below the detection limit of AES (<lat%). And the densities of TIN films deposited on Si (100) and (111) substrates were 4.85g/cm3 and 4.98g/cm3. which are higher than that of the films deposited by other conventional CVD methods.

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