Atomic layer deposition of Al2O3 on GaSb using in situ hydrogen plasma exposure

2012 ◽  
Vol 101 (23) ◽  
pp. 231601 ◽  
Author(s):  
Laura B. Ruppalt ◽  
Erin R. Cleveland ◽  
James G. Champlain ◽  
Sharka M. Prokes ◽  
J. Brad Boos ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Hydrogen Plasma ◽  
Atomic Layer ◽  
Plasma Exposure ◽  
Layer Deposition

Effect of in situ hydrogen plasma treatment on zinc oxide grown using low temperature atomic layer deposition

2013 ◽  
Vol 31 (1) ◽  
pp. 01A124 ◽  
Author(s):  
Tae-Hoon Jung ◽  
Jin-Seong Park ◽  
Dong-Ho Kim ◽  
Yongsoo Jeong ◽  
Sung-Gyu Park ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Low Temperature ◽  
Atomic Layer Deposition ◽  
Plasma Treatment ◽  
Hydrogen Plasma ◽  
Atomic Layer ◽  
Layer Deposition

Plasma-assisted Atomic Layer Deposition of TiN Films at low Deposition Temperature for High-aspect Ratio Applications

2005 ◽  
Vol 863 ◽  
Author(s):  
S.B.S. Heil ◽  
E. Langereis ◽  
F. Roozeboom ◽  
A. Kemmeren ◽  
N.P. Pham ◽  
...  
Keyword(s):  
Growth Rate ◽  
Aspect Ratio ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Impurity Level ◽  
Plasma Exposure ◽  
Tin Films ◽  
Layer Deposition ◽  
Low Deposition Temperature

AbstractA plasma-assisted atomic layer deposition (PA-ALD) process of titanium nitride (TiN) using TiCl4 precursor dosing and H2/N2 plasma exposure is presented. In situ spectroscopic ellipsometry revealed a growth rate at 400 °C of ∼0.7 A/cycle independent of precursor dosing. Varying the plasma exposure time changed the stoichiometry [N]/[Ti] of the films within the range ∼0.93-1.15. At 100 °C a relatively low chlorine impurity level (∼2 at. %) and low resistivity (∼200 νΔcm) were obtained for a ∼45 nm thick film. The growth rate was found to be considerably lower (∼0.3 Å/cycle) at this temperature. Using TEM imaging we found that PAALD TiN films can be deposited conformally in 20:1 aspect-ratio features (1.5 Êm width) but that the step coverage still needs to be improved, probably by a prolonged plasma exposure step.

The impact on in-situ-hydrogen-plasma treatment for zinc oxide plasma enhanced atomic layer deposition

2012 ◽  
Vol 12 ◽  
pp. S134-S138 ◽  
Author(s):  
Jung-Dae Kwon ◽  
Jae-Won Lee ◽  
Kee-Seok Nam ◽  
Dong-Ho Kim ◽  
Yongsoo Jeong ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Atomic Layer Deposition ◽  
Plasma Treatment ◽  
Hydrogen Plasma ◽  
Atomic Layer ◽  
Layer Deposition ◽  
The Impact
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