Atomic Layer Deposition of Molybdenum Oxide for Solar Cell Application

2014 ◽  
Vol 492 ◽  
pp. 375-379 ◽  
Author(s):  
Dip K. Nandi ◽  
Shaibal K. Sarkar
Keyword(s):  
Growth Rate ◽  
Atomic Layer Deposition ◽  
Molybdenum Oxide ◽  
Atomic Layer ◽  
Maximum Growth ◽  
Maximum Growth Rate ◽  
Solar Cell Application ◽  
Layer Deposition ◽  
Temperature Window

This work focuses on synthesis of molybdenum oxide (MoO3) by Atomic layer deposition (ALD) using molybdenum hexacarbonyl [Mo (CO)6] and ozone. In-situ growth characteresticswerestudied by Quartz Crystal Microbalance (QCM). ALD temperature window for this material lies between 165 to 175°C giving a maximum growth rate of 0.45 Å per ALD cycle. Negligible nucleation was found by QCM studyindicating a linear growth of the film. Effect of different oxidants on the growth rate is also studied.As-deposited film is amorphous in nature which converts to monoclinic-MoO3 after annealing as seen by taransmission electron microscopy.

Plasma-assisted Atomic Layer Deposition of TiN Films at low Deposition Temperature for High-aspect Ratio Applications

2005 ◽  
Vol 863 ◽  
Author(s):  
S.B.S. Heil ◽  
E. Langereis ◽  
F. Roozeboom ◽  
A. Kemmeren ◽  
N.P. Pham ◽  
...  
Keyword(s):  
Growth Rate ◽  
Aspect Ratio ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Impurity Level ◽  
Plasma Exposure ◽  
Tin Films ◽  
Layer Deposition ◽  
Low Deposition Temperature

AbstractA plasma-assisted atomic layer deposition (PA-ALD) process of titanium nitride (TiN) using TiCl4 precursor dosing and H2/N2 plasma exposure is presented. In situ spectroscopic ellipsometry revealed a growth rate at 400 °C of ∼0.7 A/cycle independent of precursor dosing. Varying the plasma exposure time changed the stoichiometry [N]/[Ti] of the films within the range ∼0.93-1.15. At 100 °C a relatively low chlorine impurity level (∼2 at. %) and low resistivity (∼200 νΔcm) were obtained for a ∼45 nm thick film. The growth rate was found to be considerably lower (∼0.3 Å/cycle) at this temperature. Using TEM imaging we found that PAALD TiN films can be deposited conformally in 20:1 aspect-ratio features (1.5 Êm width) but that the step coverage still needs to be improved, probably by a prolonged plasma exposure step.

scholarly journals Growth of thin films of molybdenum oxide by atomic layer deposition

2011 ◽  
Vol 21 (3) ◽  
pp. 705-710 ◽  
Author(s):  
Madeleine Diskus ◽  
Ola Nilsen ◽  
Helmer Fjellvåg
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Molybdenum Oxide ◽  
Atomic Layer ◽  
Layer Deposition

scholarly journals Structural and Optical Properties of Luminescent Copper(I) Chloride Thin Films Deposited by Sequentially Pulsed Chemical Vapour Deposition

Coatings ◽  
2018 ◽  
Vol 8 (10) ◽  
pp. 369 ◽  
Author(s):  
Richard Krumpolec ◽  
Tomáš Homola ◽  
David Cameron ◽  
Josef Humlíček ◽  
Ondřej Caha ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Chemical Vapour Deposition ◽  
Photoelectron Spectroscopy ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Atomic Layer ◽  
Nanocrystalline Films ◽  
Zinc Blende ◽  
Layer Deposition

Sequentially pulsed chemical vapour deposition was used to successfully deposit thin nanocrystalline films of copper(I) chloride using an atomic layer deposition system in order to investigate their application to UV optoelectronics. The films were deposited at 125 °C using [Bis(trimethylsilyl)acetylene](hexafluoroacetylacetonato)copper(I) as a Cu precursor and pyridine hydrochloride as a new Cl precursor. The films were analysed by XRD, X-ray photoelectron spectroscopy (XPS), SEM, photoluminescence, and spectroscopic reflectance. Capping layers of aluminium oxide were deposited in situ by ALD (atomic layer deposition) to avoid environmental degradation. The film adopted a polycrystalline zinc blende-structure. The main contaminants were found to be organic materials from the precursor. Photoluminescence showed the characteristic free and bound exciton emissions from CuCl and the characteristic exciton absorption peaks could also be detected by reflectance measurements.

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