SiO2 Atomic Layer Deposition Using Tris(dimethylamino)silane and Hydrogen Peroxide Studied by in Situ Transmission FTIR Spectroscopy

2009 ◽  
Vol 113 (19) ◽  
pp. 8249-8257 ◽  
Author(s):  
B. B. Burton ◽  
S. W. Kang ◽  
S. W. Rhee ◽  
S. M. George
Keyword(s):  
Hydrogen Peroxide ◽  
Atomic Layer Deposition ◽  
Ftir Spectroscopy ◽  
Atomic Layer ◽  
Layer Deposition

Advantages of Hydrogen Peroxide as an Oxidant for Atomic Layer Deposition and Related Novel Delivery System

2013 ◽  
Vol 1494 ◽  
pp. 209-214 ◽  
Author(s):  
Jeff Spiegelman ◽  
Dan Alvarez ◽  
Russell J. Holmes ◽  
Ed Heinlein ◽  
Zohreh Shamsi
Keyword(s):  
Hydrogen Peroxide ◽  
Atomic Layer Deposition ◽  
Gas Phase ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Oxidation Properties ◽  
Temperature And Pressure ◽  
Phase Chemistry ◽  
Transfer Properties

ABSTRACTProposed is the use of Hydrogen Peroxide (H2O2) as the ideal oxidant for atomic layer deposition of metal oxide films. H2O2 has similar oxidation properties to Ozone while simultaneously having slightly stronger proton transfer properties than water. Vital to the success of any vapor phase chemistry is delivery of stable compositions, temperature and pressure. This study demonstrates the viability of a new membrane technology for the precise delivery of H2O2/ H2O mixtures starting from a liquid range of 30-70%. An in-situ gas phase cleaning process to remove carbon contamination from Ge(100) surfaces using gas phase H2O2 has been characterized.

scholarly journals Structural and Optical Properties of Luminescent Copper(I) Chloride Thin Films Deposited by Sequentially Pulsed Chemical Vapour Deposition

Coatings ◽  
2018 ◽  
Vol 8 (10) ◽  
pp. 369 ◽  
Author(s):  
Richard Krumpolec ◽  
Tomáš Homola ◽  
David Cameron ◽  
Josef Humlíček ◽  
Ondřej Caha ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Chemical Vapour Deposition ◽  
Photoelectron Spectroscopy ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Atomic Layer ◽  
Nanocrystalline Films ◽  
Zinc Blende ◽  
Layer Deposition

Sequentially pulsed chemical vapour deposition was used to successfully deposit thin nanocrystalline films of copper(I) chloride using an atomic layer deposition system in order to investigate their application to UV optoelectronics. The films were deposited at 125 °C using [Bis(trimethylsilyl)acetylene](hexafluoroacetylacetonato)copper(I) as a Cu precursor and pyridine hydrochloride as a new Cl precursor. The films were analysed by XRD, X-ray photoelectron spectroscopy (XPS), SEM, photoluminescence, and spectroscopic reflectance. Capping layers of aluminium oxide were deposited in situ by ALD (atomic layer deposition) to avoid environmental degradation. The film adopted a polycrystalline zinc blende-structure. The main contaminants were found to be organic materials from the precursor. Photoluminescence showed the characteristic free and bound exciton emissions from CuCl and the characteristic exciton absorption peaks could also be detected by reflectance measurements.

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