Band gap fluctuations in Cu(In,Ga)Se2 thin films

2005 ◽  
Vol 865 ◽  
Author(s):  
Julian Mattheis ◽  
Thomas Schlenker ◽  
Martin Bogicevic ◽  
Uwe Rau ◽  
Jürgen H. Werner
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Band Gap ◽  
Open Circuit Voltage ◽  
Band Gap Energy ◽  
Open Circuit ◽  
Measured Absorption ◽  
Alloy Disorder ◽  
Gallium Content ◽  
Forbidden Gap

AbstractA simple statistical model describes measured absorption and photoluminescence data of Cu(In1-x, Gax)Se2 thin films. The broadening of the transition peak in the absorption spectra stems from band gap fluctuations. The extent of the spatial inhomogeneities as expressed in the standard deviation Eg μ reaches a maximum of Eg μ = 90 meV for films with equal amounts of indium and gallium, indicating alloy disorder as one possible source of the band gap fluctuations. The fluctuations observed lead to a decrease δVOC of the maximum possible open-circuit voltage VOC of almost 150 mV. However, the experimentally measured, low VOC of solar cells with high gallium content cannot be explained by band gap fluctuations alone. Consequently, our analysis suggests that the dominant recombination process in Cu(In1-x, Gax)Se2 thin film solar cells with high gallium content is not governed by the band gap energy, but is more likely due to deep levels within the forbidden gap.

scholarly journals Record 1.0 V open-circuit voltage in wide band gap chalcopyrite solar cells

2017 ◽  
Vol 25 (9) ◽  
pp. 755-763 ◽  
Author(s):  
Fredrik Larsson ◽  
Nina Shariati Nilsson ◽  
Jan Keller ◽  
Christopher Frisk ◽  
Volodymyr Kosyak ◽  
...  
Keyword(s):  
Solar Cells ◽  
Band Gap ◽  
Open Circuit Voltage ◽  
Wide Band ◽  
Open Circuit ◽  
Wide Band Gap

Tailoring the Open-Circuit Voltage Deficit of Wide-Band-Gap Perovskite Solar Cells Using Alkyl Chain-Substituted Fullerene Derivatives

2018 ◽  
Vol 10 (26) ◽  
pp. 22074-22082 ◽  
Author(s):  
Dhruba B. Khadka ◽  
Yasuhiro Shirai ◽  
Masatoshi Yanagida ◽  
Takeshi Noda ◽  
Kenjiro Miyano
Keyword(s):  
Solar Cells ◽  
Band Gap ◽  
Open Circuit Voltage ◽  
Alkyl Chain ◽  
Perovskite Solar Cells ◽  
Wide Band ◽  
Open Circuit ◽  
Wide Band Gap ◽  
Fullerene Derivatives

Narrow band gap isoindigo-based small molecules for solution-processed organic solar cells with high open-circuit voltage

2016 ◽  
Vol 220 ◽  
pp. 448-454 ◽  
Author(s):  
Changyan Ji ◽  
Lunxiang Yin ◽  
Bao Xie ◽  
Xiaochen Wang ◽  
Xu Li ◽  
...  
Keyword(s):  
Solar Cells ◽  
Small Molecules ◽  
Band Gap ◽  
Organic Solar Cells ◽  
Open Circuit Voltage ◽  
Narrow Band ◽  
Open Circuit ◽  
Solution Processed

scholarly journals Effects of Sulfurization Temperature on Properties of CZTS Films by Vacuum Evaporation and Sulfurization Method

2013 ◽  
Vol 2013 ◽  
pp. 1-6 ◽  
Author(s):  
Jie Zhang ◽  
Bo Long ◽  
Shuying Cheng ◽  
Weibo Zhang
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Band Gap ◽  
Crystallite Size ◽  
Low Cost ◽  
Band Gap Energy ◽  
Vacuum Evaporation ◽  
Glass Substrates ◽  
Sulfurization Temperature ◽  
Czts Thin Films

Copper zinc tin sulfur (CZTS) thin films have been extensively studied in recent years for their advantages of low cost, high absorption coefficient (≥104 cm−1), appropriate band gap (~1.5 eV), and nontoxicity. CZTS thin films are promising materials of solar cells like copper indium gallium selenide (CIGS). In this work, CZTS thin films were prepared on glass substrates by vacuum evaporation and sulfurization method. Sn/Cu/ZnS (CZT) precursors were deposited by thermal evaporation and then sulfurized in N2+ H2S atmosphere at temperatures of 360–560°C to produce polycrystalline CZTS thin films. It is found that there are some impurity phases in the thin films with the sulfurization temperature less than 500°C, and the crystallite size of CZTS is quite small. With the further increase of the sulfurization temperature, the obtained thin films exhibit preferred (112) orientation with larger crystallite size and higher density. When the sulfurization temperature is 500°C, the band gap energy, resistivity, carrier concentration, and mobility of the CZTS thin films are 1.49 eV, 9.37 Ω · cm,1.714×1017 cm−3, and 3.89 cm2/(V · s), respectively. Therefore, the prepared CZTS thin films are suitable for absorbers of solar cells.

Efficient photovoltaic devices based on p-ZnSe/n-CdS core–shell heterojunctions with high open-circuit voltage

2017 ◽  
Vol 5 (8) ◽  
pp. 2107-2113 ◽  
Author(s):  
Xiwei Zhang ◽  
Jie Mao ◽  
Zhibin Shao ◽  
Senlin Diao ◽  
Dan Hu ◽  
...  
Keyword(s):  
Solar Cells ◽  
Band Gap ◽  
Open Circuit Voltage ◽  
Open Circuit ◽  
Core Shell ◽  
Photovoltaic Devices ◽  
Heterojunction Solar Cells ◽  
Znse Nanowires ◽  
Cds Films

Large band-gap ZnSe nanowires and CdS films are used to construct core–shell heterojunction solar cells with high open circuit voltage and efficiency.

High Open Circuit Voltage in Regioregular Narrow Band Gap Polymer Solar Cells

2014 ◽  
Vol 136 (36) ◽  
pp. 12576-12579 ◽  
Author(s):  
Ming Wang ◽  
Hengbin Wang ◽  
Takamichi Yokoyama ◽  
Xiaofeng Liu ◽  
Ye Huang ◽  
...  
Keyword(s):  
Solar Cells ◽  
Band Gap ◽  
Open Circuit Voltage ◽  
Narrow Band ◽  
Polymer Solar Cells ◽  
Open Circuit
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