Frictional behavior and particle adhesion of abrasive particles during Cu CMP

2005 ◽  
Vol 867 ◽  
Author(s):  
Yi-Koan Hong ◽  
Ja-Hyung Han ◽  
Jae-Hoon Song ◽  
Jin-Goo Park
Keyword(s):  
Citric Acid ◽  
Adhesion Force ◽  
Particle Adhesion ◽  
Friction Behavior ◽  
Abrasive Particles ◽  
Frictional Behavior ◽  
Cu Cmp ◽  
Particle Adhesion Force ◽  
Wafer Surfaces ◽  
Citrate Ions

AbstractThe friction behavior and adhesion of abrasive particles were experimentally investigated during Cu CMP process. The highest particle adhesion force was measured in alumina slurry without citric acid. However, the alumina slurry with addition of citric acid had the lowest particle adhesion due to the adsorption of citrate ions on the alumina surfaces. While citrate ions could be easily adsorbed on alumina particles, silica particle showed the least effect on adsorption in citric acid solutions. The magnitude of adsorptions of citrate ions on the particle surfaces had significant effect on frictional behavior as well as adhesion force. Higher particle adhesion force resulted in higher friction, particle contamination and scratches in CMP process. It indicates that the magnitudes of particle adhesions on wafer surfaces in slurries can be directly related to the frictional behavior during CMP process.

The Adsorption Behaviors of Citric Acid on Abrasive Particles in Cu CMP Slurry

2005 ◽  
Vol 867 ◽  
Author(s):  
Young-Jae Kang ◽  
Yi-Koan Hong ◽  
Jae-Hoon Song ◽  
In-Kwon Kim ◽  
Jin-Goo Park
Keyword(s):  
Citric Acid ◽  
Friction Force ◽  
Adhesion Force ◽  
Removal Rate ◽  
Friction Forces ◽  
Abrasive Particles ◽  
Ph Values ◽  
Adsorption Behaviors ◽  
Cu Cmp ◽  
Citrate Ions

AbstractThe interaction between Cu surface and abrasive particles in slurry solution was characterized. The adsorption behavior of the citrate ions was dependent on the pH of the slurry and the concentration of the citric acid. The adsorption of citrate ions generated a highly negative charge on the alumina surface and shifted isoelectric point (IEP) to lower pH values. The Cu removal rate of alumina slurry was higher than that of colloidal silica based slurry in the investigated pH ranges. Although lower friction forces of Cu were observed in alumina based slurry of pH 4, 6 and 8, a higher friction force was observed at pH 2. This high friction force was attributed to the positive zeta potential and greater adhesion force of particle. It indicates that the magnitudes of particle adhesions on Cu surfaces in slurries can be directly related to the frictional behavior during CMP process.

Adhesion and Removal of Alumina Slurry Particles on Wafer Surfaces in Cu CMP

2005 ◽  
Vol 103-104 ◽  
pp. 275-278
Author(s):  
Yi Koan Hong ◽  
Ja Hyung Han ◽  
Jin Hyung Lee ◽  
Jin Goo Park ◽  
Ahmed A. Busnaina
Keyword(s):  
Alumina Particle ◽  
Adhesion Force ◽  
Interaction Force ◽  
Zeta Potentials ◽  
Alumina Particles ◽  
Particle Contamination ◽  
Cu Cmp ◽  
Wafer Surfaces

The adhesion force and removal of alumina particles on Cu, Ta, TEOS, SILKTM, Aurora and FSG wafer surfaces were experimentally and theoretically investigated in slurry solutions of different pHs. These wafer surfaces showed negative zeta potentials in the investigated pH ranges with exception of FSG and Ta. However, the zeta potentials of FSG surface drastically decreased with increasing pH. The lowest adhesion force and smallest number of alumina particles were measured between alumina particle and FSG surface in a slurry solution of pH 11. Alkaline slurry was much more desirable in controlling the level of particle contamination during Cu CMP. The pH of the slurry and zeta potentials of the surfaces played important roles in controlling the interaction force.

The Adhesion of Pad Particles on Wafer Surfaces during Cu CMP

2005 ◽  
Vol 867 ◽  
Author(s):  
Jae-Hoon Song ◽  
Ja-Hyung Han ◽  
Yi-Koan Hong ◽  
Young-Jae Kang ◽  
Jin-Goo Park ◽  
...  
Keyword(s):  
Isoelectric Point ◽  
Adhesion Force ◽  
Dielectric Materials ◽  
Interaction Forces ◽  
Zeta Potentials ◽  
Alumina Particles ◽  
Cu Cmp ◽  
Wafer Surfaces

AbstractThe adhesion force of pad and alumina were experimentally and theoretically investigated in slurry solutions of different pHs. The isoelectric point (IEP) of pad particles was measured to be around pH 3. The wafer surfaces showed negative zeta potentials in the investigated pH ranges with exception of FSG and Ta. Cu and Ta showed higher interaction forces than dielectric materials. The lowest adhesion force was measured between pad particle and wafer surfaces in a slurry solution of pH 11. The magnitude of adhesion force of pad particles was lower than alumina particles.

scholarly journals Prediction of Inter-particle Adhesion Force from Surface Energy and Surface Roughness

2011 ◽  
Vol 25 (4-5) ◽  
pp. 367-384 ◽  
Author(s):  
Laila J. Jallo ◽  
Yuhua Chen ◽  
James Bowen ◽  
Frank Etzler ◽  
Rajesh Dave
Keyword(s):  
Surface Roughness ◽  
Surface Energy ◽  
Adhesion Force ◽  
Particle Adhesion ◽  
Particle Adhesion Force

Particle Adhesion Force Distributions on Rough Surfaces

Langmuir ◽  
2004 ◽  
Vol 20 (13) ◽  
pp. 5298-5303 ◽  
Author(s):  
M. Götzinger ◽  
W. Peukert
Keyword(s):  
Adhesion Force ◽  
Rough Surfaces ◽  
Particle Adhesion ◽  
Particle Adhesion Force

scholarly journals Drop test: A new method to measure the particle adhesion force

2014 ◽  
Vol 264 ◽  
pp. 236-241 ◽  
Author(s):  
U. Zafar ◽  
C. Hare ◽  
A. Hassanpour ◽  
M. Ghadiri
Keyword(s):  
Adhesion Force ◽  
Drop Test ◽  
New Method ◽  
Particle Adhesion ◽  
Particle Adhesion Force

Adhesion and Removal of Silica and Ceria Particles on the Wafer Surfaces in STI and Poly Si CMP

2007 ◽  
Vol 134 ◽  
pp. 159-163 ◽  
Author(s):  
Yi Koan Hong ◽  
Young Jae Kang ◽  
Jin Goo Park ◽  
Sang Yeob Han ◽  
Seong Kyu Yun ◽  
...  
Keyword(s):  
Adhesion Force ◽  
Memory Cell ◽  
Alkaline Solutions ◽  
Cell Contact ◽  
Shallow Trench Isolation ◽  
Abrasive Particles ◽  
Trench Isolation ◽  
Particle Contamination ◽  
Wafer Surfaces ◽  
Si Wafer

The purpose of this study is to investigate the effects of slurry pH on the adhesion and removal of silica and ceria abrasive particles on the poly Si, TEOS, SiN and SAC (self aligned memory cell contact) and STI (shallow trench isolation) patterned wafer surfaces. The adhesion force of silica and ceria particles were theoretically and experimentally investigated in STI and poly Si CMP process. A stronger adhesion force was observed for silica particles on the poly Si wafer in acidic rather than in alkaline solutions. The adhesion force of ceria particle was lower than that of silica in investigated pH ranges. STI patterned wafer showed lower adhesion force than SAC patterned wafer. Lower adhesion force between particles and surface resulted in a lower level of particle contamination.

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