Adhesion and Removal of Alumina Slurry Particles on Wafer Surfaces in Cu CMP

2005 ◽  
Vol 103-104 ◽  
pp. 275-278
Author(s):  
Yi Koan Hong ◽  
Ja Hyung Han ◽  
Jin Hyung Lee ◽  
Jin Goo Park ◽  
Ahmed A. Busnaina
Keyword(s):  
Alumina Particle ◽  
Adhesion Force ◽  
Interaction Force ◽  
Zeta Potentials ◽  
Alumina Particles ◽  
Particle Contamination ◽  
Cu Cmp ◽  
Wafer Surfaces

The adhesion force and removal of alumina particles on Cu, Ta, TEOS, SILKTM, Aurora and FSG wafer surfaces were experimentally and theoretically investigated in slurry solutions of different pHs. These wafer surfaces showed negative zeta potentials in the investigated pH ranges with exception of FSG and Ta. However, the zeta potentials of FSG surface drastically decreased with increasing pH. The lowest adhesion force and smallest number of alumina particles were measured between alumina particle and FSG surface in a slurry solution of pH 11. Alkaline slurry was much more desirable in controlling the level of particle contamination during Cu CMP. The pH of the slurry and zeta potentials of the surfaces played important roles in controlling the interaction force.

The Adhesion of Pad Particles on Wafer Surfaces during Cu CMP

2005 ◽  
Vol 867 ◽  
Author(s):  
Jae-Hoon Song ◽  
Ja-Hyung Han ◽  
Yi-Koan Hong ◽  
Young-Jae Kang ◽  
Jin-Goo Park ◽  
...  
Keyword(s):  
Isoelectric Point ◽  
Adhesion Force ◽  
Dielectric Materials ◽  
Interaction Forces ◽  
Zeta Potentials ◽  
Alumina Particles ◽  
Cu Cmp ◽  
Wafer Surfaces

AbstractThe adhesion force of pad and alumina were experimentally and theoretically investigated in slurry solutions of different pHs. The isoelectric point (IEP) of pad particles was measured to be around pH 3. The wafer surfaces showed negative zeta potentials in the investigated pH ranges with exception of FSG and Ta. Cu and Ta showed higher interaction forces than dielectric materials. The lowest adhesion force was measured between pad particle and wafer surfaces in a slurry solution of pH 11. The magnitude of adhesion force of pad particles was lower than alumina particles.

Frictional behavior and particle adhesion of abrasive particles during Cu CMP

2005 ◽  
Vol 867 ◽  
Author(s):  
Yi-Koan Hong ◽  
Ja-Hyung Han ◽  
Jae-Hoon Song ◽  
Jin-Goo Park
Keyword(s):  
Citric Acid ◽  
Adhesion Force ◽  
Particle Adhesion ◽  
Friction Behavior ◽  
Abrasive Particles ◽  
Frictional Behavior ◽  
Cu Cmp ◽  
Particle Adhesion Force ◽  
Wafer Surfaces ◽  
Citrate Ions

AbstractThe friction behavior and adhesion of abrasive particles were experimentally investigated during Cu CMP process. The highest particle adhesion force was measured in alumina slurry without citric acid. However, the alumina slurry with addition of citric acid had the lowest particle adhesion due to the adsorption of citrate ions on the alumina surfaces. While citrate ions could be easily adsorbed on alumina particles, silica particle showed the least effect on adsorption in citric acid solutions. The magnitude of adsorptions of citrate ions on the particle surfaces had significant effect on frictional behavior as well as adhesion force. Higher particle adhesion force resulted in higher friction, particle contamination and scratches in CMP process. It indicates that the magnitudes of particle adhesions on wafer surfaces in slurries can be directly related to the frictional behavior during CMP process.

Electrical Characterization of Slurry Particles and their Interactions with Wafer Surfaces

1999 ◽  
Vol 566 ◽  
Author(s):  
Jin-Goo Park ◽  
Sang-Ho Lee ◽  
Hyoung-Gyun Kim
Keyword(s):  
Particle Deposition ◽  
Colloidal Silica ◽  
Electrical Characterization ◽  
Dlvo Theory ◽  
Silica Particles ◽  
Zeta Potentials ◽  
Alumina Particles ◽  
Silica Alumina ◽  
Wafer Surfaces

The purpose of this study was to explore the interaction between slurry particles and wafer surfaces by the measurements of their zeta potentials. The zeta potentials of slurry particles such as fumed and colloidal silica, alumina, ceria and MnO2 and substrates such as silicon, TEOS, W, and Al have been measured by electrophoretic and electroosmosis method to evaluate the electrical properties of surfaces, respectively. The zeta potential of oxide and metal surfaces showed similar values to those of particles as a function of pH. The interaction energy between alumina and silica particles and TEOS, W and Al substrate were calculated based on DLVO theory. No deposition of silica particles on TEOS and the heavy deposition of alumina particles on metal substrates were observed in the particle deposition test. Experimental results were well agreed with the theoretical calculation.

Adhesion and Removal of Silica and Ceria Particles on the Wafer Surfaces in STI and Poly Si CMP

2007 ◽  
Vol 134 ◽  
pp. 159-163 ◽  
Author(s):  
Yi Koan Hong ◽  
Young Jae Kang ◽  
Jin Goo Park ◽  
Sang Yeob Han ◽  
Seong Kyu Yun ◽  
...  
Keyword(s):  
Adhesion Force ◽  
Memory Cell ◽  
Alkaline Solutions ◽  
Cell Contact ◽  
Shallow Trench Isolation ◽  
Abrasive Particles ◽  
Trench Isolation ◽  
Particle Contamination ◽  
Wafer Surfaces ◽  
Si Wafer

The purpose of this study is to investigate the effects of slurry pH on the adhesion and removal of silica and ceria abrasive particles on the poly Si, TEOS, SiN and SAC (self aligned memory cell contact) and STI (shallow trench isolation) patterned wafer surfaces. The adhesion force of silica and ceria particles were theoretically and experimentally investigated in STI and poly Si CMP process. A stronger adhesion force was observed for silica particles on the poly Si wafer in acidic rather than in alkaline solutions. The adhesion force of ceria particle was lower than that of silica in investigated pH ranges. STI patterned wafer showed lower adhesion force than SAC patterned wafer. Lower adhesion force between particles and surface resulted in a lower level of particle contamination.

scholarly journals Pre-particle filtration and moisture control by efficient purging in various inlet and outlet of a 450 mm wafer front-opening unified pod

2015 ◽  
Vol 4 (2) ◽  
pp. 304 ◽  
Author(s):  
Bill Chiu ◽  
Shih-Cheng Hu ◽  
Angus Shiue ◽  
Yu-Yun Shiue ◽  
Zhe-Yu Huang
Keyword(s):  
Metal Corrosion ◽  
Native Oxide ◽  
Moisture Concentration ◽  
Contamination Control ◽  
Point Of Use ◽  
Particle Contamination ◽  
Film Cracking ◽  
New Generation ◽  
And Storage ◽  
Wafer Surfaces

The trend toward narrower line width in semiconductor manufacturing has made contamination control more and more important. The presence of moisture in wafer containers, such as front opening unified pods (FOUP), can lead to the native oxide residues growth, metal corrosion, and thin film cracking on wafer surfaces. Accordingly, decreasing contamination methods and improving factory efficiency are continuously researched. Single or multi-layer particulate shields on top of wafers in FOUPs may be used to prevent pollutant accumulation. In addition, point-of-use (POU) filtration may also been used to control particle contamination in FOUPs during wafer transformation and storage. The demand for stricter filtration led to the usage of 0.10 and 0.20 µm membranes to control the contamination. However, with the introduction of finer membranes end users may have concerns about deleterious remainders on wafers from undergoing filtration. There are a total of 25 pieces of wafers in the FOUP and the arrangement is from the bottom (wafer No. 1) to the top (wafer No. 25) with arising manner. Purging FOUPs to expel moisture vapors with Clean Dry Air (CDA) is one of the most popular methods.There was no previous research for investigating the purge performance on new-generation 450mm FOUPs. This research aims to study main factors influencing the performance of the purge system on 450mm FOUPs, including moisture concentration, CDA flow rate, and filter pressure.

scholarly journals Mechanics for the Adhesion and Aggregation of Red Blood Cells on Chitosan

2018 ◽  
Vol 34 (5) ◽  
pp. 725-732 ◽  
Author(s):  
K. Y. Chen ◽  
T. H. Lin ◽  
C. Y. Yang ◽  
Y. W. Kuo ◽  
U. Lei
Keyword(s):  
Red Blood Cells ◽  
Blood Cells ◽  
Biomedical Applications ◽  
Adhesion Force ◽  
Layer Structure ◽  
Optical Tweezer ◽  
Wound Dressings ◽  
Zeta Potentials ◽  
Rbc Membrane ◽  
Layer Structures

AbstractHemostasis, a process which causes bleeding to stop, can be enhanced using chitosan; but the detailed mechanism is unclear. Red blood cells (RBCs) adhere to chitosan because of their opposite charges, but the adhesion force is small, 3.83 pN as measured here using an optical tweezer, such that the direct adhesion cannot be the sole cause for hemostasis. However, it was observed in this study that layer structures of aggregated RBCs were formed next to chitosan objects in both static and flowing environments, but not formed next to cotton and rayon yarns. The layer structure is the clue for the initiation of hemostatsis. Through the supporting measurements of zeta potentials of RBCs and pH's using blood-chitosan mixtures, it is proposed here that the formation of the RBC layer structure next to chitosan objects is due to the reduction of repulsive electric double layer force between RBCs, because of the association of H+ deprotonated from chitosan with COO− on RBC membrane, under the DLVO (Derjaguin-Landau-Verwey-Overbeek) theory. The results are beneficial for designing effective chitosan-based wound dressings, and also for general biomedical applications.

scholarly journals Effect of Resin Luting Systems and Alumina Particle Air Abrasion on Bond Strength to Zirconia

2018 ◽  
Vol 43 (3) ◽  
pp. 282-290 ◽  
Author(s):  
R Grasel ◽  
MJ Santos ◽  
HM Chagas Rêgo ◽  
MP Rippe ◽  
LF Valandro
Keyword(s):  
Bond Strength ◽  
Shear Bond Strength ◽  
Alumina Particle ◽  
Optical Microscope ◽  
Strength Testing ◽  
Air Abrasion ◽  
Tukey Test ◽  
Luting Agents ◽  
Luting Agent ◽  
Alumina Particles

SUMMARY This study aimed to evaluate the effect of different primer/resin luting agent combinations and alumina air abrasion on the adhesion to zirconia. Eighty blocks (4×4×3 mm) of Lava Frame Zirconia (3M ESPE) were produced and randomly assigned into eight groups (n=10) according to two zirconia surface treatments (untreated or air abrasion with 50-μm alumina particles) and four luting systems (SU: Scotchbond Universal/RelyX Unicem 2; ZP: Z-Prime Plus/Duo-link Universal; MB: Monobond Plus/Variolink II; and AP: Alloy Primer/ED Primer II/Panavia F 2.0). After the conditioning and primer applications, resin luting agents were manipulated and applied on the zirconia, using a matrix, to form a cylinder (2 mm in diameter×2 mm high), followed by photoactivation for 40 seconds. After that, the specimens were stored in distilled water (37 °C) for 120 days and then submitted to shear bond strength testing, followed by failure mode evaluation under an optical microscope (30×). A two-way analysis of variance and Tukey test (α=0.05) were used for data analysis. Alumina air abrasion (Al) promoted higher bond values for the three luting systems, except for SU, which showed the best results without air abrasion, while with air abrasion, Al-SU, Al-ZP, and Al-MB presented higher values compared to Al-AP. We concluded that the alumina air abrasion of zirconia surfaces seemed to be dispensable for the SU group, while air abrasion (topographical alterations) enhanced the adhesion of the ZP, MB, and AP groups.

Effect of Wettability of Poly Silicon on CMP Behavior

2007 ◽  
Vol 991 ◽  
Author(s):  
Young-Jae Kang ◽  
Bong-Kyun Kang ◽  
In-Kwon Kim ◽  
Jin-Goo Park ◽  
Yi-Koan Hong ◽  
...  
Keyword(s):  
Adhesion Force ◽  
Surface Wettability ◽  
Cleaning Process ◽  
Solution Ph ◽  
Poly Silicon ◽  
Careful Control ◽  
Polymeric Particle ◽  
Wafer Surfaces ◽  
Si Wafer

ABSTRACTThe hydrophobicity of poly Si is reported to introduce different polishing behavior with careful control of post CMP cleaning process. The purpose of this study was to investigate the effect of poly Si wettability on its CMP behavior. The adhesion force of polymeric particle on the poly Si wafer surfaces was measured in the KOH solution (pH 11) as a function of solution A concentration. Adhesion force decreased and saturated as a function of concentration of solution A. The change of surface wettability affects not only the polishing rates but also the level of contamination on wafer because the interactions between particles and substrates are dependent on the wettability of the surface. Also, hydrophobic poly Si surfaces attracted much more pad particles with water marks than hydrophilic

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