Adhesion and Removal of Silica and Ceria Particles on the Wafer Surfaces in STI and Poly Si CMP

2007 ◽  
Vol 134 ◽  
pp. 159-163 ◽  
Author(s):  
Yi Koan Hong ◽  
Young Jae Kang ◽  
Jin Goo Park ◽  
Sang Yeob Han ◽  
Seong Kyu Yun ◽  
...  
Keyword(s):  
Adhesion Force ◽  
Memory Cell ◽  
Alkaline Solutions ◽  
Cell Contact ◽  
Shallow Trench Isolation ◽  
Abrasive Particles ◽  
Trench Isolation ◽  
Particle Contamination ◽  
Wafer Surfaces ◽  
Si Wafer

The purpose of this study is to investigate the effects of slurry pH on the adhesion and removal of silica and ceria abrasive particles on the poly Si, TEOS, SiN and SAC (self aligned memory cell contact) and STI (shallow trench isolation) patterned wafer surfaces. The adhesion force of silica and ceria particles were theoretically and experimentally investigated in STI and poly Si CMP process. A stronger adhesion force was observed for silica particles on the poly Si wafer in acidic rather than in alkaline solutions. The adhesion force of ceria particle was lower than that of silica in investigated pH ranges. STI patterned wafer showed lower adhesion force than SAC patterned wafer. Lower adhesion force between particles and surface resulted in a lower level of particle contamination.

Adhesion and Removal of Alumina Slurry Particles on Wafer Surfaces in Cu CMP

2005 ◽  
Vol 103-104 ◽  
pp. 275-278
Author(s):  
Yi Koan Hong ◽  
Ja Hyung Han ◽  
Jin Hyung Lee ◽  
Jin Goo Park ◽  
Ahmed A. Busnaina
Keyword(s):  
Alumina Particle ◽  
Adhesion Force ◽  
Interaction Force ◽  
Zeta Potentials ◽  
Alumina Particles ◽  
Particle Contamination ◽  
Cu Cmp ◽  
Wafer Surfaces

The adhesion force and removal of alumina particles on Cu, Ta, TEOS, SILKTM, Aurora and FSG wafer surfaces were experimentally and theoretically investigated in slurry solutions of different pHs. These wafer surfaces showed negative zeta potentials in the investigated pH ranges with exception of FSG and Ta. However, the zeta potentials of FSG surface drastically decreased with increasing pH. The lowest adhesion force and smallest number of alumina particles were measured between alumina particle and FSG surface in a slurry solution of pH 11. Alkaline slurry was much more desirable in controlling the level of particle contamination during Cu CMP. The pH of the slurry and zeta potentials of the surfaces played important roles in controlling the interaction force.

Frictional behavior and particle adhesion of abrasive particles during Cu CMP

2005 ◽  
Vol 867 ◽  
Author(s):  
Yi-Koan Hong ◽  
Ja-Hyung Han ◽  
Jae-Hoon Song ◽  
Jin-Goo Park
Keyword(s):  
Citric Acid ◽  
Adhesion Force ◽  
Particle Adhesion ◽  
Friction Behavior ◽  
Abrasive Particles ◽  
Frictional Behavior ◽  
Cu Cmp ◽  
Particle Adhesion Force ◽  
Wafer Surfaces ◽  
Citrate Ions

AbstractThe friction behavior and adhesion of abrasive particles were experimentally investigated during Cu CMP process. The highest particle adhesion force was measured in alumina slurry without citric acid. However, the alumina slurry with addition of citric acid had the lowest particle adhesion due to the adsorption of citrate ions on the alumina surfaces. While citrate ions could be easily adsorbed on alumina particles, silica particle showed the least effect on adsorption in citric acid solutions. The magnitude of adsorptions of citrate ions on the particle surfaces had significant effect on frictional behavior as well as adhesion force. Higher particle adhesion force resulted in higher friction, particle contamination and scratches in CMP process. It indicates that the magnitudes of particle adhesions on wafer surfaces in slurries can be directly related to the frictional behavior during CMP process.

Effect of Wettability of Poly Silicon on CMP Behavior

2007 ◽  
Vol 991 ◽  
Author(s):  
Young-Jae Kang ◽  
Bong-Kyun Kang ◽  
In-Kwon Kim ◽  
Jin-Goo Park ◽  
Yi-Koan Hong ◽  
...  
Keyword(s):  
Adhesion Force ◽  
Surface Wettability ◽  
Cleaning Process ◽  
Solution Ph ◽  
Poly Silicon ◽  
Careful Control ◽  
Polymeric Particle ◽  
Wafer Surfaces ◽  
Si Wafer

ABSTRACTThe hydrophobicity of poly Si is reported to introduce different polishing behavior with careful control of post CMP cleaning process. The purpose of this study was to investigate the effect of poly Si wettability on its CMP behavior. The adhesion force of polymeric particle on the poly Si wafer surfaces was measured in the KOH solution (pH 11) as a function of solution A concentration. Adhesion force decreased and saturated as a function of concentration of solution A. The change of surface wettability affects not only the polishing rates but also the level of contamination on wafer because the interactions between particles and substrates are dependent on the wettability of the surface. Also, hydrophobic poly Si surfaces attracted much more pad particles with water marks than hydrophilic

Control of Adhesion Force Between Ceria Particles and Polishing Pad in Shallow Trench Isolation Chemical Mechanical Planarization

2014 ◽  
Vol 14 (6) ◽  
pp. 4351-4356 ◽  
Author(s):  
Jihoon Seo ◽  
Jinok Moon ◽  
Jae-Young Bae ◽  
Kwang Seob Yoon ◽  
Wolfgang Sigmund ◽  
...  
Keyword(s):  
Adhesion Force ◽  
Chemical Mechanical Planarization ◽  
Shallow Trench Isolation ◽  
Polishing Pad ◽  
Trench Isolation

Micro-Raman Spectroscopy Evaluation of the Local Mechanical Stress in Shallow Trench Isolation CMOS Structures: Correlation with Defect Generation and Diode Leakage

1998 ◽  
Author(s):  
I. De Wolf ◽  
G. Groeseneken ◽  
H.E. Maes ◽  
M. Bolt ◽  
K. Barla ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Mechanical Stress ◽  
Defect Formation ◽  
Active Area ◽  
Wet Oxidation ◽  
Leakage Currents ◽  
Shallow Trench Isolation ◽  
Micro Raman Spectroscopy ◽  
Silicon Devices ◽  
Trench Isolation

Abstract It is shown, using micro-Raman spectroscopy, that Shallow Trench Isolation introduces high stresses in the active area of silicon devices when wet oxidation steps are used. These stresses result in defect formation in the active area, leading to high diode leakage currents. The stress levels are highest near the outer edges of line structures and at square structures. They also increase with decreasing active area dimensions.

Advances in Chemical-Mechanical Planarization

MRS Bulletin ◽  
2002 ◽  
Vol 27 (10) ◽  
pp. 743-751 ◽  
Author(s):  
Rajiv K. Singh ◽  
Rajeev Bajaj
Keyword(s):  
Surface Topography ◽  
Process Integration ◽  
Semiconductor Industry ◽  
Chemical Mechanical Planarization ◽  
Shallow Trench Isolation ◽  
Trench Isolation ◽  
Fundamental Understanding ◽  
Copper Polishing ◽  
Future Growth

AbstractThe primary aim of this issue of MRS Bulletin is to present an overview of the materials issues in chemical–mechanical planarization (CMP), also known as chemical–mechanial polishing, a process that is used in the semiconductor industry to isolate and connect individual transistors on a chip. The CMP process has been the fastest-growing semiconductor operation in the last decade, and its future growth is being fueled by the introduction of copper-based interconnects in advanced microprocessors and other devices. Articles in this issue range from providing a fundamental understanding of the CMP process to the latest advancements in the field. Topics covered in these articles include an overview of CMP, fundamental principles of slurry design, understanding wafer–pad–slurry interactions, process integration issues, the formulation of abrasive-free slurries for copper polishing, understanding surface topography issues in shallow trench isolation, and emerging applications.

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