Epitaxy in the Presence of Very Large Misfit: High Resolution TEM Study of Al/Si, Ag/Si, Al/CaF2/Si and Ag/CaF2/Si

1987 ◽  
Vol 94 ◽  
Author(s):  
F. K LeGoues ◽  
M. Liehr ◽  
M. Renier
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Lattice Models ◽  
High Angle ◽  
Multilayered Structures ◽  
Metal Insulator ◽  
Transmission Electron ◽  
High Resolution Tem ◽  
Geometrical Argument

ABSTRACTWe summarize high resolution transmission electron microscopy studies of interfaces with 33% misfit. We explain the existence of epitaxial interfaces for this systems by a geometrical argument similar to the 0-lattice models used to study high angle grain boundaries. Differences between systems very similar in structures are explained. We use the thus found epitaxial interfaces to build multilayered structures of the type metal/insulator/semiconductor.

Orientation relationship and interfacial structure between Nbsolid solution precipitates and α-Nb5Si3 intermetallics

2009 ◽  
Vol 24 (1) ◽  
pp. 192-197 ◽  
Author(s):  
G.M. Cheng ◽  
Y.X. Tian ◽  
L.L. He
Keyword(s):  
Electron Microscopy ◽  
Solid Solution ◽  
Transmission Electron Microscopy ◽  
Stress Concentration ◽  
High Resolution ◽  
Orientation Relationship ◽  
Interfacial Structure ◽  
Selected Area Electron Diffraction ◽  
Transmission Electron ◽  
High Resolution Tem

The orientation relationship (OR) and the interfacial structure between Nb solid solution (Nbss) precipitates and α-Nb5Si3 intermetallics have been investigated by transmission electron microscopy (TEM). The OR between Nbss and α-Nb5Si3 was determined by selected-area electron diffraction analyses as (222)Nb//(002)α and . High-resolution TEM images of the Nbss/α-Nb5Si3 interface were presented. Steps existed at the interface that acted as centers of stress concentration and released the distortion of lattices to decrease the interfacial energy. In addition, the interfacial models were proposed based on the observed OR to describe the atomic matching of the interface. The distribution of alloying elements at the Nbss/α-Nb5Si3 interface has also been investigated, and Hf was enriched at the interface to strengthen the grain boundary.

Observation of Dislocation Cutting Ω Phase and its Strengthening Mechanism in an Al-Cu-Mg-Ag Alloy

1997 ◽  
Vol 3 (2) ◽  
pp. 139-145 ◽  
Author(s):  
Bernard Q. Li ◽  
Franklin E. Wawner
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Strengthening Mechanism ◽  
The Other ◽  
Step Height ◽  
Conventional Transmission Electron Microscopy ◽  
Ω Phase ◽  
Transmission Electron ◽  
High Resolution Tem

Abstract: This investigation presents the interaction of dislocations and semicoherent precipitates (Ω phase) in an Al-Cu-Mg-Ag alloy. The study shows that the semicoherent precipitate is cut by dislocations during deformation. Conventional transmission electron microscopy (TEM) and high resolution TEM (HRTEM) observations demonstrate that shearing of precipitates by dislocations occurs by multiple cutting in the precipitate. The step height caused by cutting on the Ω precipitate is only several atomic layers of the Ω phase. The Ω phase is strengthened after shearing by dislocations. A strengthening mechanism is proposed on the basis of this observation. The strengthening mechanism is not only applicable to the Ω precipitate in Al-Cu-Mg-Ag alloys but also to the other semicoherent precipitates in other alloys.

A Tem Study of Inverse Melting in Nb45Cr55

1995 ◽  
Vol 398 ◽  
Author(s):  
W. Sinkler ◽  
C. Michaelsen ◽  
R. Bormann
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Electron Diffraction ◽  
Grain Boundaries ◽  
Amorphous Phase ◽  
Transmission Electron ◽  
High Resolution Tem

ABSTRACTInverse melting of bcc Nb4sCr55 is investigated using transmission electron microscopy, high-resolution TEM and electron diffraction. It is shown that the transformation to the amorphous phase initiates at the bcc grain boundaries. The transformation results in an increase in incoherence, evidenced by a loss of bend contours. Some anisotropy is found in the amorphous phase produced by inverse melting, which is associated in HRTEM with preferentially oriented but discontinuous and distorted fringes. The results are consistent with the production of an amorphous phase by inverse melting.

High-Resolution TEM Observation of 4H-SiC (0001) Surface Planarized by Catalyst-Referred Etching

2012 ◽  
Vol 717-720 ◽  
pp. 873-876 ◽  
Author(s):  
Bui Van Pho ◽  
Shun Sadakuni ◽  
Takeshi Okamoto ◽  
Ryusuke Sagawa ◽  
Kenta Arima ◽  
...  
Keyword(s):  
Crystal Structure ◽  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Care Process ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
High Resolution Tem ◽  
The Relationship

A novel abrasive-free planarization method “called catalyst-referred etching (CARE)” has been invented. After the CARE process, a flat and well-ordered surface is obtained as observed by atomic force microscopy (AFM). To determine the atomic structure at the topmost surface, in this study, CARE-processed surfaces of a standard commercial 2-inch n-type 4H-SiC (0001) wafer cut 8o off-axis toward the [1-100] direction were observed by high-resolution transmission electron microscopy (HRTEM). The HRTEM images showed alternating wide and narrow terraces and a single-bilayer step height. The relationship between the width of the terraces and the 4H-SiC crystal structure has been clarified.

Graphene Growth on C and Si-Face of 4H-SiC – TEM and AFM Studies

2010 ◽  
Vol 645-648 ◽  
pp. 577-580 ◽  
Author(s):  
Jolanta Borysiuk ◽  
Rafał Bożek ◽  
Wlodek Strupiński ◽  
Jacek M. Baranowski
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Graphene Layer ◽  
Graphene Growth ◽  
Graphene Layers ◽  
Prolonged Annealing ◽  
Transmission Electron ◽  
High Resolution Tem

Transmission Electron Microscopy (TEM) investigations of graphene layers synthesized on Si and C-terminated on-axis oriented 4H-SiC are presented. The high-resolution TEM (HRTEM) revealed distinctive distance differences between the first carbon graphene layer and SiC surface for both polarities. The prolonged annealing of SiC with carbon face shows, that in addition to the increase of number of graphene layers, there is also observed splitting between stack of graphene layers and the surface of SiC substrate. In addition, the density of so called “puckers” increases.

scholarly journals High Resolution Tem Studies of Defects Near Si-SiO2 Interface

1983 ◽  
Vol 31 ◽  
Author(s):  
J. H. Mazur ◽  
J. Washburn
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Stacking Faults ◽  
Boron Doped ◽  
Transmission Electron ◽  
High Resolution Tem ◽  
One Step ◽  
P Type

ABSTRACTSmall defects with habit parallel to {100} and {311} matrix planes were observed using high resolution transmission electron microscopy (HREM) within 100 nm from the Si-Si02 interfaces after one step oxidation in dry O2 at 900°C, 1000°C and 1150°C of Czochralski (CZ) grown [100] p type boron doped, 1.5 − 20 Ω cm Si wafers with concentrations of oxygen1.4 × 10 18cm−3 and carbon 4. − 10. × 10 16 cm−3.The defects were less than 10 nm wide and I nm thick. The {100} and {311} defect are interpreted tentatively as thin silica plateletes and {311} stacking faults respectively. Distribution of defects near the interface was random although their density appeared to be lower for higher oxidation temperatures. It is not yet clear whether the defects were formed during the oxidation treatments or were present near the surfaces of the asreceived wafers.

scholarly journals Transmission electron microscopy as an important tool for characterization of zeolite structures

2018 ◽  
Vol 5 (11) ◽  
pp. 2836-2855 ◽  
Author(s):  
W. Wan ◽  
J. Su ◽  
X. D. Zou ◽  
T. Willhammar
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Electron Diffraction ◽  
Electron Tomography ◽  
Structure Characterization ◽  
Transmission Electron ◽  
High Resolution Tem

This review presents various TEM techniques including electron diffraction, high-resolution TEM and scanning TEM imaging, and electron tomography and their applications for structure characterization of zeolite materials.

Fabrication of In2O3 Oxide Semiconductor Nano-Particles Using Apoferritin

2005 ◽  
Vol 873 ◽  
Author(s):  
Mitsuhiro Okuda ◽  
Ichiro Yamashita ◽  
Kenji Iwahori ◽  
Hideyuki Yoshimura
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Nano Particles ◽  
Oxide Semiconductor ◽  
Cavity Size ◽  
X Ray ◽  
Transmission Electron ◽  
Lattice Space ◽  
High Resolution Tem

AbstractIn2O3 nanoparticles were fabricated in the cavity of the cage-shaped protein, apoferritin by utilizing a quick chemical reaction of indium oxide. Horse spleen apoferritin in the solution of indium ions buffered at pH 9.5 was incubated for 30 minutes. The transmission electron microscopy (TEM) observation with aurothioglucose staining showed that cores were formed in the apoferritin cavity. The sizes of cores were regulated by the cavity size and their diameters were below 7nm. Energy dispersion X-ray analysis (EDX) indicated that indium was contained in the cores. The high-resolution TEM (HR-TEM) revealed that cores are single or poly crystalline and the lattice space was consistent with that of In2O3. These results confirmed that the In2O3 cores were successfully formed in the apoferritin cavity.

High Resolution Tem Studies of β-Alumina Type Structures

1983 ◽  
Vol 31 ◽  
Author(s):  
K. J. Morrissey ◽  
Z. Elgat ◽  
Y. Kouh ◽  
C. B. Carter
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Analytical Electron Microscopy ◽  
Image Simulation ◽  
Commercial Alumina ◽  
Transmission Electron ◽  
Analytical Electron ◽  
High Resolution Tem ◽  
High Resolution Images

ABSTRACTHigh resolution transmission electron microscopy (HRTEM) has been used to study structures found in secondphase particles in commercial alumina compacts. Analytical electron microscopy has been used to identify elements present in the particles. Computer image simulation has been used for both the structural interpretation of high resolution images and predicting the effect which the presence of other elements would have on the observed structures.

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