Epitaxial Growth of High Curie-Temperature Ge1-xMnx quantum dots on Si(001) by auto-assembly
2014 ◽
Vol 24
(1)
◽
pp. 69
◽
Keyword(s):
We report on successful growth of epitaxial and high Curie-temperature Ge1-xMnx quantum dots on Si (001) substrates using the auto-assembled approach. By reducing the growth temperature down to 400 °C, we show that the Mn diffusion into the Si substrate can be neglected. No indication of secondary phases or clusters was observed. Ge1-xMnx quantum dots were found to be epitaxial and perfectly coherent to the Si substrate. We also observe ferromagnetic ordering in quantum dots at a temperature higher 320 K. It is believed that single-crystalline quantum dots exhibiting a high Curie temperature are potential candidates for spin injection at temperatures higher than room temperature.
2018 ◽
Vol 10
(45)
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pp. 39032-39039
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2012 ◽
Vol 2012
◽
pp. 1-13
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2008 ◽
Vol 8
(8)
◽
pp. 3955-3958
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2014 ◽
Vol 53
(4S)
◽
pp. 04EH05
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