Exhaustive and Systematic Accuracy Verification and Enhancement of STI Stress Compact Model for General Realistic Layout Patterns

2010 ◽  
Vol E93-C (8) ◽  
pp. 1349-1358
Author(s):  
Kenta YAMADA ◽  
Toshiyuki SYO ◽  
Hisao YOSHIMURA ◽  
Masaru ITO ◽  
Tatsuya KUNIKIYO ◽  
...  
Keyword(s):  
Compact Model

Sky Segmentation for Enhanced Depth Reconstruction and Bokeh Rendering with Efficient Architectures

2020 ◽  
Vol 2020 (14) ◽  
pp. 378-1-378-7
Author(s):  
Tyler Nuanes ◽  
Matt Elsey ◽  
Radek Grzeszczuk ◽  
John Paul Shen
Keyword(s):  
Real Time ◽  
Mobile Device ◽  
Computational Cost ◽  
False Positives ◽  
Compact Model ◽  
High Quality ◽  
False Negatives ◽  
Trade Off ◽  
Depth Reconstruction ◽  
Binary Classifiers

We present a high-quality sky segmentation model for depth refinement and investigate residual architecture performance to inform optimally shrinking the network. We describe a model that runs in near real-time on mobile device, present a new, highquality dataset, and detail a unique weighing to trade off false positives and false negatives in binary classifiers. We show how the optimizations improve bokeh rendering by correcting stereo depth misprediction in sky regions. We detail techniques used to preserve edges, reject false positives, and ensure generalization to the diversity of sky scenes. Finally, we present a compact model and compare performance of four popular residual architectures (ShuffleNet, MobileNetV2, Resnet-101, and Resnet-34-like) at constant computational cost.

ТИРИСТОРНЫЙ ЭФФЕКТ В СВЧ ИС, ИЗГОТОВЛЕННЫХ ПО SIGE БИКМОП-ТЕХНОЛОГИЯМ

2020 ◽  
Vol 96 (3s) ◽  
pp. 612-614
Author(s):  
В.В. Елесина ◽  
И.О. Метелкин
Keyword(s):  
Integrated Circuits ◽  
Extraction Procedure ◽  
Compact Model ◽  
Model Parameters ◽  
Cad Systems ◽  
Parameters Extraction ◽  
Sige Bicmos ◽  
Bicmos Integrated Circuits ◽  
Basic Parameters ◽  
Radiation Induced

Проведен анализ случаев возникновения тиристорного эффекта в СВЧ ИС, изготовленных по технологии SiGe БиКМОП, при воздействии ионизирующего излучения. Рассмотрены области СВЧ ИС, чувствительные к возникновению ТЭ, определены основные параметры тиристорных структур. Проведена апробация подхода к восстановлению параметров схемно-топологической радиационно-ориентированной модели тиристорной структуры для САПР. The paper analyzes ionizing radiation induced latchup in microwave SiGe BiCMOS integrated circuits (ICs). Critical parts of ICs sensitive to latchup have been identified and basic parameters of corresponding parasitic thyristor structures have been determined. An approach has been approved to the thyristor structure compact model parameters extraction procedure intended for use in CAD systems.

scholarly journals A Physic-Based Explicit Compact Model for Reconfigurable Field-Effect Transistor

IEEE Access ◽  
2021 ◽  
pp. 1-1
Author(s):  
Wangze Ni ◽  
Zhen Dong ◽  
Bairun Huang ◽  
Yichi Zhang ◽  
Zhuojun Chen
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Compact Model ◽  
Effect Transistor

scholarly journals Analytical Modeling and Simulation of S-Drive Piezoelectric Actuators

Actuators ◽  
2021 ◽  
Vol 10 (5) ◽  
pp. 87
Author(s):  
Nicholas A. Jones ◽  
Jason Clark
Keyword(s):  
Element Model ◽  
Mechanical Efficiency ◽  
Compact Model ◽  
High Frequency Response ◽  
Macro Scale ◽  
Piezoelectric Structure ◽  
Modern Manufacturing ◽  
Manufacturing Techniques ◽  
Piezoelectric Structures ◽  
Improve Device

This paper presents a structural geometry for increasing piezoelectric deformation, which is suitable for both micro- and macro-scale applications. New and versatile microstructure geometries for actuators can improve device performance, and piezoelectric designs benefit from a high-frequency response, power density, and efficiency, making them a viable choice for a variety of applications. Previous works have presented piezoelectric structures capable of this amplification, but few are well-suited to planar manufacturing. In addition to this manufacturing difficulty, a large number of designs cannot be chained into longer elements, preventing them from operating at the macro-scale. By optimizing for both modern manufacturing techniques and composability, this structure excels as an option for a variety of macro- and micro-applications. This paper presents an analytical compact model of a novel dual-bimorph piezoelectric structure, and shows that this compact model is within 2% of a computer-distributed element model. Furthermore it compares the actuator’s theoretical performance to that of a modern actuator, showing that this actuator trades mechanical efficiency for compactness and weight savings.

scholarly journals Analytical Surface Potential-Based Compact Model for Independent Dual Gate a-IGZO TFT

2021 ◽  
Vol 68 (4) ◽  
pp. 2049-2055
Author(s):  
Jingrui Guo ◽  
Ying Zhao ◽  
Guanhua Yang ◽  
Xichen Chuai ◽  
Wenhao Lu ◽  
...  
Keyword(s):  
Surface Potential ◽  
Compact Model ◽  
Dual Gate ◽  
Igzo Tft

High Contrast Gratings (HCG) MEMS-Tunable VCSEL Compact Model

2020 ◽  
Author(s):  
John Jairus D.P. Eslit ◽  
Maria Theresa G. de Leon ◽  
Marc D. Rosales
Keyword(s):  
Compact Model ◽  
High Contrast

Explicit Compact Model for Ultranarrow Body FinFETs

2009 ◽  
Vol 56 (7) ◽  
pp. 1543-1547 ◽  
Author(s):  
Mingchun Tang ◽  
Fabien Pregaldiny ◽  
Christophe Lallement ◽  
Jean-Michel Sallese
Keyword(s):  
Compact Model
Sign in / Sign up

Export Citation Format

Share Document