ABX3 inorganic halide perovskites for solar cells: chemical and crystal structure stability

ABSTRACT Solar energy is one of the most promising and developed technologies in recent years, due to its high efficiency and low cost. Perovskite-type solar cells have been the focus of attention by the world scientific community. The main objective of this article is to present an (PSCs) analysis of the various investigations reported on the development of ABX3 inorganic halide perovskite-based solar cells, with emphasis in the effect that temperature and humidity have on their chemical and crystal structure stability. The main methods that are used to obtain ABX3 inorganic halide perovskites are also presented and analyzed. An analysis about the structure of these photovoltaic cells and how to improve their efficiency (PCS), fill factor (FF), short circuit current density (Jsc) and open circuit voltage (Voc) of these devices is presented. As a conclusion, a relationship of the methods, synthesis variables, and type of inorganic halide perovskite used for the development of devices with the best efficiencies is presented; the trends towards which this area of science is heading are also highlighted.

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Numerical Simulation on Effects of TCO Work Function on Performance of a-Si:H Solar Cells

Materials Science Forum ◽

10.4028/www.scientific.net/msf.966.501 ◽

2019 ◽

Vol 966 ◽

pp. 501-506

Author(s):

Ahmad Sholih ◽

Dadan Hamdani ◽

Sigit Tri Wicaksono ◽

Mas Irfan P. Hidayat ◽

Yoyok Cahyono ◽

...

Keyword(s):

Solar Cells ◽

Work Function ◽

Conversion Efficiency ◽

High Efficiency ◽

Low Cost ◽

Short Circuit ◽

Short Circuit Current ◽

Open Circuit ◽

Conducting Oxides ◽

Conversion Efficiencies

In this paper, we have investigated the effect of the work function of transparent conducting oxides (TCO) on the performance of a-Si:H p-i-n solar cells, including open circuit voltage (VOC), short circuit current (JSC), fill factor (FF) and conversion efficiency, using AFORS-HET software. The simulation has focused on two layers: front contact work function (ΦTCO-front) and back contact work function (ΦTCO-back) with various band from 4.7 eV to 5.3 eV and 4.2 eV to 4.9 eV respectively. From the simulation results, we know that the work function of TCO greatly affects the performance of solar cells such as Voc, Jsc, FF and conversion efficiency. By optimization, we arrive at results for Voc, Jsc, FF and conversion efficiencies of 0.88 V, 8.95 mA / cm2, 65% and 5.1% respectively. This result is obtained on ΦTCO-front 5.2 eV. When ΦTCO-front 5.2 eV, the value of VOC, FF and conversion efficiency has been saturated, while the value of the J sc actually begins to decrease. Furthermore, when the ΦTCO - back is 4.3 eV, we get the best results for VOC, Jsc, FF and conversion Efficiency of 0.9 V, 8.96 mA / cm2, 73 % and 5.9 % respectively. When ΦTCO-back 4.3 eV, the value of VOC, FF and conversion efficiency begins to decrease, while the value of the Jsc does’t change significantly. These optimizations may help in producing low cost high efficiency p-i-n solar cells experimentally.

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Simulation of InAIN/Si Single-Heterojunction Solar Cells Using wxAMPS

Applied Mechanics and Materials ◽

10.4028/www.scientific.net/amm.665.111 ◽

2014 ◽

Vol 665 ◽

pp. 111-114 ◽

Cited By ~ 1

Author(s):

Ying Huang ◽

Xiao Ming Shen ◽

Xiao Feng Wei

Keyword(s):

Solar Cells ◽

Fill Factor ◽

High Efficiency ◽

Open Circuit Voltage ◽

Short Circuit ◽

Short Circuit Current ◽

Indium Content ◽

Open Circuit ◽

Heterojunction Solar Cells ◽

Si Solar Cells

In this paper, InAlN/Si single-heterojunction solar cells have been theoretically simulated based on wxAMPS software. The photovoltaic parameters, such as open circuit voltage, short circuit current, fill factor and conversion efficiency were investigated with changing the indium content and thickness of n-InAlN layer. Simulation results show that the optimum efficiency of InAlN/Si solar cells is 23.1% under AM 1.5G spectral illuminations, with the indium content and thickness of n-InAlN layer are 0.65 and 600nm, respectively. The simulation would contribute to design and fabricate high efficiency InAlN/Si solar cells in experiment.

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Effect of CdTe thickness reduction in high efficiency CdS/CdTe solar cells

MRS Proceedings ◽

10.1557/proc-668-h6.4 ◽

2001 ◽

Vol 668 ◽

Cited By ~ 8

Author(s):

Akhlesh Gupta ◽

I. Matulionis ◽

J. Drayton ◽

A.D. Compaan

Keyword(s):

Solar Cells ◽

High Efficiency ◽

Short Circuit ◽

Short Circuit Current ◽

Cdte Film ◽

Open Circuit ◽

Thickness Reduction ◽

X Ray Diffraction ◽

Cell Parameters ◽

Cdte Solar Cells

ABSTRACTHigh efficiency CdTe solar cells are typically grown with CdTe thicknesses from 3 to 15 μm, although the thickness required for 90% absorption of the incident irradiation at 800 nm is only ∼1 μm. In this paper, we present the effect of CdTe thickness reduction on the performance of CdS/CdTe solar cells in which both the CdS and CdTe films were grown by sputtering. We produced a series of cells with different CdTe thickness (from 0.5 to 3.0 μm), and held the CdS thickness and back-contact-processing constant. The effect of CdTe thickness reduction on the diffusion of CdS into CdTe was studied using optical absorption and x-ray diffraction techniques. Only slight decreases occur in open-circuit voltage, short-circuit current, and fill factor with decrease in CdTe film thickness to 1.0 μm. Almost 10% efficient cells were obtained with 1 μm CdTe. Below 1 μm, all cell parameters decrease more rapidly, including the red quantum efficiency.

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Graded Carrier Concentration Absorber Profile for High Efficiency CIGS Solar Cells

International Journal of Photoenergy ◽

10.1155/2015/410549 ◽

2015 ◽

Vol 2015 ◽

pp. 1-9 ◽

Cited By ~ 17

Author(s):

Antonino Parisi ◽

Riccardo Pernice ◽

Vincenzo Rocca ◽

Luciano Curcio ◽

Salvatore Stivala ◽

...

Keyword(s):

Solar Cells ◽

Band Gap ◽

Carrier Concentration ◽

High Efficiency ◽

Energy Gap ◽

Short Circuit ◽

Short Circuit Current ◽

Open Circuit ◽

Doping Density ◽

Cigs Solar Cells

We demonstrate an innovative CIGS-based solar cells model with a graded doping concentration absorber profile, capable of achieving high efficiency values. In detail, we start with an in-depth discussion concerning the parametrical study of conventional CIGS solar cells structures. We have used the wxAMPS software in order to numerically simulate cell electrical behaviour. By means of simulations, we have studied the variation of relevant physical and chemical parameters—characteristic of such devices—with changing energy gap and doping density of the absorber layer. Our results show that, in uniform CIGS cell, the efficiency, the open circuit voltage, and short circuit current heavily depend on CIGS band gap. Our numerical analysis highlights that the band gap value of 1.40 eV is optimal, but both the presence of Molybdenum back contact and the high carrier recombination near the junction noticeably reduce the crucial electrical parameters. For the above-mentioned reasons, we have demonstrated that the efficiency obtained by conventional CIGS cells is lower if compared to the values reached by our proposed graded carrier concentration profile structures (up to 21%).

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Integrating Concentrated Optics for Ambient Perovskite Solar Cells

Energies ◽

10.3390/en14092714 ◽

2021 ◽

Vol 14 (9) ◽

pp. 2714

Author(s):

Maria Khalid ◽

Anurag Roy ◽

Shubhranshu Bhandari ◽

Senthilarasu Sundaram ◽

Tapas K. Mallick

Keyword(s):

Solar Cells ◽

Solar Irradiance ◽

High Efficiency ◽

Low Cost ◽

Short Circuit ◽

Perovskite Solar Cells ◽

Short Circuit Current ◽

Initial Assessment ◽

Pv System ◽

Rapid Improvement

Metal halide perovskite solar cells (PSCs) are considered an effectual way to enhance photovoltaic (PV) properties, leading to low-cost and high efficiency. PSCs have experienced rapid improvement in the last ten years. The device’s energy production increases extensively in the presence of concentrated light. The use of concentrated optics in solar cells has spurred the PV industry towards tremendous research. Incorporating the concentrated optic into the PV system as a concentrated PV (CPV) means it can capture light effectively and operate at increased efficiencies under concentrated irradiance. This work addresses an initial assessment of the power conversion efficiency (PCE) enhancement of the ambient PSCs by externally integrating concentrated optics. Significantly, the concentrated optics exhibit ~90% of the PCE enhancement under the solar irradiance of 400 W/m2, whereas 16% of the PCE increase was observed when the solar irradiance changed to 1000 W/m2. During optics integration, a considerable elevation of short-circuit current predominately facilitated the overall efficiency enhancement of the PSC. A systematic PV parameters effect on the optic integration on PSCs was further scrutinized. Therefore, this work signifies a possible way to alleviate the PCE of carbon-based PSC using concentrated optics. This work focuses on integrating CPVs into PSCs, preventing PSC stability and scalability issues, with light conditioning techniques.

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The Essence and Efficiency Limits of Bulk-Heterostructure Organic Solar Cells

MRS Proceedings ◽

10.1557/opl.2012.750 ◽

2012 ◽

Vol 1390 ◽

Cited By ~ 1

Author(s):

M. Alam ◽

B. Ray ◽

M. Khan ◽

S. Dongaonkar

Keyword(s):

Organic Solar Cells ◽

Carrier Transport ◽

High Efficiency ◽

Bulk Heterojunction ◽

Low Cost ◽

Short Circuit ◽

Short Circuit Current ◽

Substantial Improvement ◽

Open Circuit ◽

Future Improvement

Abstract:Since its introduction in early 1990s, bulk-heterojunction organic photovoltaic solar cell (BHJ-OPV) has promised high-efficiency at ultra-low cost and weight, with potential for non-traditional applications such as building-integrated PV. There is a widespread presumption, however, that the complexity of morphology makes carrier transport in OPV irreducibly complicated, and possibly, beyond predictive modeling. In this paper, we use elementary and intuitive arguments to derive the fundamental thermodynamic as well as morphology-specific practical limits of BHJ-OPV efficiency. We find that constraints of the percolation threshold and trade-off among short-circuit current, open circuit voltage, and fill factor make substantial improvement in OPV efficiency difficult. We posit that future improvement in OPV will rely not on morphology engineering, or reducing the polymer bandgap, but on increasing both the effective μ × τ product and the cross-gap between donor/acceptors. Even if the OPV fails to achieve the highest efficiency anticipated by the thermodynamic limit, its novel form factor, lightweight, and transparency can make it a commercially viable option for many applications.

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AlxIn1−xN on Si (100) Solar Cells (x = 0–0.56) Deposited by RF Sputtering

Materials ◽

10.3390/ma13102336 ◽

2020 ◽

Vol 13 (10) ◽

pp. 2336 ◽

Cited By ~ 1

Author(s):

Sirona Valdueza-Felip ◽

Rodrigo Blasco ◽

Javier Olea ◽

Alba Díaz-Lobo ◽

Alejandro F. Braña ◽

...

Keyword(s):

Solar Cells ◽

Low Cost ◽

Short Circuit ◽

Photovoltaic Performance ◽

Rf Sputtering ◽

Solar Spectrum ◽

Short Circuit Current ◽

Open Circuit ◽

Electrical Performance ◽

Al Content

We investigate the photovoltaic performance of solar cells based on n-AlxIn1−xN (x = 0–0.56) on p-Si (100) hetero-junctions deposited by radio frequency sputtering. The AlxIn1−xN layers own an optical bandgap absorption edge tuneable from 1.73 eV to 2.56 eV within the Al content range. This increase of Al content results in more resistive layers (≈10−4–1 Ω·cm) while the residual carrier concentration drops from ~1021 to ~1019 cm−3. As a result, the top n-contact resistance varies from ≈10−1 to 1 MΩ for InN to Al0.56In0.44N-based devices, respectively. Best results are obtained for devices with 28% Al that exhibit a broad external quantum efficiency covering the full solar spectrum with a maximum of 80% at 750 nm, an open-circuit voltage of 0.39 V, a short-circuit current density of 17.1 mA/cm2 and a conversion efficiency of 2.12% under air mass 1.5 global (AM1.5G) illumination (1 sun), rendering them promising for novel low-cost III-nitride on Si photovoltaic devices. For Al contents above 28%, the electrical performance of the structures lessens due to the high top-contact resistivity.

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Chosen Aspects Of Investigations Of Solar Cells With The Laser Beam Induced Current Technique

Metrology and Measurement Systems ◽

10.1515/mms-2015-0020 ◽

2015 ◽

Vol 22 (2) ◽

pp. 241-250

Author(s):

Łukasz Bartłomiej Chrobak ◽

Wiesław Ryszard Madej ◽

Mirosław Andrzej Maliński

Keyword(s):

Solar Cells ◽

Spectral Dependence ◽

Open Circuit Voltage ◽

Low Cost ◽

Short Circuit ◽

Short Circuit Current ◽

Open Circuit ◽

Spatial Distributions ◽

Induced Current ◽

Crystal Silicon

Abstract This paper presents maps of spatial distributions of the short circuit current Isc(x,y) and the open circuit voltage Uoc(x,y) of the investigated low cost solar cells. Visible differences in values of these parameters were explained by differences in the serial and shunt resistances determined for different points of solar cells from measurements of I–V characteristics. The spectral dependence of the photo voltage of solar cell is also shown, discussed and interpreted in the model of amorphous and crystal silicon.

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Influence of Defect States and Thickness of Interface Layer On High Efficiency of c-Si/a-Si:H Heterojunction Solar Cells With Higher Bandgap a-Si:H(p) Layer By Simulation

10.21203/rs.3.rs-210502/v1 ◽

2021 ◽

Author(s):

Venkanna Kanneboina

Keyword(s):

Solar Cells ◽

High Efficiency ◽

Defect Density ◽

Short Circuit ◽

Short Circuit Current ◽

Interface Layer ◽

Open Circuit ◽

Defect States ◽

Solar Cell Performance ◽

Heterojunction Solar Cells

Abstract This paper presents the influence of defect states and thickness of interface layer on high efficiency of c-Si/a-Si:H heterojunction solar cells with higher bandgap emitter a-Si:H(p) layer by AFORSHET simulation tool. At first, the performance of Ag/ZnO/a-Si:H(p)/ a-Si:H(i)/ c-Si(n)/ a-Si:H(i)/ a-Si:H(n)/Ag heterojunction solar cells was studied by altering the thickness of a-Si:H(p) and a-Si:H(i) layers. The best values of open circuit voltage (Voc) (764.8 mV), short circuit current density (Jsc) (43.15 mA/cm2), fill factor (FF) (85.71) and efficiency(ɳ) (28.28%) were obtained at 3 nm of a-Si:H(p) and a-Si:H(i) layer. In the same structure, c-Si(n) interface was introduced in between c-Si(n) and a-Si:H(i) layer. It is found that the solar cell performance was not changed by varying defect density from 109-1014 cm-3 for thin (5 and 10 nm) interface layer and estimated values are 761.7 mV, 38.83 mA/cm2, 86.09%, 25.46% correspond to Voc, Jsc, FF, ɳ respectively. For very thick interface layer, defect density has shown huge impact on the device performance. At 1 µm, the Voc, FF and ɳ values have been changed from 760.2 to 653.2 mV, 85.9 to 80.76% and 22.94 to 18.47% for the defect density of 109 to 1014 cm-3 respectively.

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Fabrication and Optoelectrical Properties of IZO/Cu2OHeterostructure Solar Cells by Thermal Oxidation

Advances in Condensed Matter Physics ◽

10.1155/2012/129139 ◽

2012 ◽

Vol 2012 ◽

pp. 1-5 ◽

Cited By ~ 5

Author(s):

Cheng-Chiang Chen ◽

Lung-Chien Chen ◽

Yi-Hsuan Lee

Keyword(s):

Solar Cells ◽

Fill Factor ◽

Open Circuit Voltage ◽

Low Cost ◽

Short Circuit ◽

Maximum Output Power ◽

Short Circuit Current ◽

Open Circuit ◽

Maximum Output ◽

Indium Zinc Oxide

Indium zinc oxide (IZO)/cupper oxide (Cu2O) is a nontoxic nature and an attractive all-oxide candidate for low-cost photovoltaic (PV) applications. The present paper reports on the fabrication of IZO/Cu2O heterostructure solar cells which the Cu2O layers were prepared by oxidation of Cu thin films deposited on glass substrate. The measured parameters of cells were the short-circuit current (Isc), the open-circuit voltage (Voc), the maximum output power (Pm), the fill factor (FF), and the efficiency (η), which had values of 0.11 mA, 0.136 V, 5.05 μW, 0.338, and 0.56%, respectively, under AM 1.5 illumination.

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