scholarly journals Фазовые равновесия в системе Sm2Te3–GeTe

2019 ◽  
Vol 21 (2) ◽  
pp. 328-333
Author(s):  
Ziyafat Mukhtarova
Keyword(s):  
Spinodal Decomposition ◽  
Thermoelectric Properties ◽  
Electronic Materials ◽  
Decomposition Reaction ◽  
Simultaneous Optimization ◽  
Thermoelectric Performance ◽  
Advanced Materials ◽  
Energy Materials ◽  
Thermo Electric ◽  
P Type

Методами физико-химического анализа – дифференциально-термическим, высокотемпературным дифференциально-термическим, рентгенофазовым, микроструктурным, а также измерением микротвердости изучена система Sm2Te3–GeTe, которая является квазибинарным сечением тройной системы Ge–Sm–Te. При соотношении исходных теллуридов 1:1 (50 мол. %) и температуре 1100 К по перитектической реакции ж+Sm2Te3→ GeSm2Te4 образуется тройное соединение GeSm2Te4. Образцы системы, богатые GeTe, представляют собой компактные слитки блестяще-серого цвета, а сплавы, бо-гатые Sm2Te3 – спек черного цвета. Ликвидус системы Sm2Te3–GeTe состоит из трех ветвей: Sm2Te3, GeSm2Te4 и a-твердых растворов на основе GeTe. Рентгенофазовый анализ закристаллизованных образцов показал, что набор рентгеновских отражений соответствует фазам Sm2Te3, GeSm2Te4 и a-твердых растворов на основе GeTe. Установлено образование инконгруэнтно плавящегося соединения состава GeSm2Te4, которое может использоваться как термоэлектрический материал. На основе GeTe образуется узкая область твердого раствора   REFERENCES Kohri H., Shiota , Kato M., Ohsugi J., Goto T. Synthesis and Thermolelectric Properties of Bi2Te3–GeTe Pseudo Binary System. Advances in Science and Technology, 2006, v. 46, pp. 168-173. https://doi.org/10.4028/www.scientifi c.net/ST.46.168 Gelbstein Y., Dado B., Ben-Yehuda O., Sadia Y., Dashevsky Z. and Dariel M. P. Highly effi cient Ge-Rich GexPb1-x Te thermoelectric alloys. Journal of Electronic Materials, 2010, v. 39(9), pp. 2049–2052. https://doi.org/10.1007/s11664-009-1012-z Gelbstein Y., Davidow J., Girard S.N., Chung D. Y. and Kanatzidis M. Controlling Metallurgical Phase Separation Reactions of the Ge0.87 Pb0.13Te Alloy for High Thermoelectric Performance. Advanced Energy Materials, 2013, v. 3, pp. 815–820. https://doi.org/10.1002/aenm.201200970 Gelbstein Y., Dashevsky Z. and Dariel M. P. Highly efficient bismuth telluride doped p-type Pb0.13Ge0.87Te for thermoelectric applications. Physical Status Solidi, 2007, v. 1(6), pp. 232–234. https://doi.org/10.1002/pssr.200701160 Gelbstein Y., Ben-Yehuda O., Dashevsky Z. and Dariel M. P. Phase transitions of p-type (Pb,Sn,Ge)Tebased alloys for thermoelectric applica tions. Journal of Crystal Growth, 2009, v. 311(18), pp. 4289–4292. https://doi.org/10.1007/s11664-008-0652-8 Gelbstein Y., Ben-Yehuda O., Pinhas E., et al. Thermoelectric properties of (Pb,Sn,Ge) Te-based alloys. Journal of Electronic Materials, 2009, v. 38(7), 1478–1482. https://doi.org/10.1007/s11664-008-0652-8 Li J., Chen Z., Zhang X., Sun Y., Yang J., Pei Y. Electronic origin of the high thermo- electric performance of GeTe among the p-type group IV monotellurides. NPG Asia Materials, 2017, v. 9, p. 353. https://doi.org/10.1038/am.2017.8 Sante D. Di., Barone P., Bertacco R., Picozzi S. Electric control of the giant rashba effect in bulk GeTe. Advanced materials, 2013, v. 25(27), pp. 3625–3626. https://doi.org/10.1002/adma.201203199 Li J., Zhang X., Lin S., Chen Z., Pei Y. Realizing the high thermoelectric performance of GeTe by Sbdoping and Se-alloying. Mater., 2017, v. 29(2), pp. 605–611. https://doi.org/10.1021/acs.chemmater.6b04066 Abrikosov N. Kh., Shelimova L. B. Poluprovodnikovye materialy na osnove soedineniy AIV BVI. [Semiconductor materials based on compounds АIV В]. Moscow, Nauka Publ., 1975, 195 p. (in Russ.) Korzhuev M. A. Vliyaniye legirovaniya na parametric of GeTe. Series 6. [Effect of doping on GeTe Series 6]. Moscow, 1983, no. 6 (179), pp. 33–36. (in Russ.) Okoye I. Electronic and optical properties of SnTe and GeTe. Journal of Physics: Condensed Matter, 2002, 14(36), pp. 8625–8637. https://doi.org/10.1088/0953-8984/14/36/318 Gelbstein Y., Rosenberg Y., Sadia Y. and Dariel M. P. Thermoelectric properties evolution of spark plasma sintered (Ge0.6Pb0.3Sn0.1)Te following a spinodal decomposition. Journal of Physical Chemistry, 2010, v. 114(30), pp. 13126–13131. https://doi.org/10.1021/jp103697s Rosenthal T., Schneider N., Stiewe C., Düblinger M., Oeckler O. Real Structure and thermoelectric properties of GeTe-rich germanium antimony tellurides. Mater., 2011, v. 23(19), pp. 4349–4356. https://doi.org/10.1021/cm201717z Li J., Chen Z., Zhang X., Yu H., Wu Z., Xie H., Chen Y., Pei Y. Simultaneous optimization of carrier concentration and alloy scattering for ultrahigh. Mater., 2017, v. 4(12), p. 341. https://doi.org/10.1002/advs.201700341 Bletskan D. I. Phase equilibrium in the system AIV-BVI-part II: systems germanium-chalcogen. Journal of Ovonic Research, 2005, v. 1(5), p. 53–60. Li S. P., Li J. Q., Wang Q. B., Wang L., Liu F. S., Ao W. Q. Synthesis and thermoelectric properties of the (GeTe)1-x(PbTe)x alloys. Solid State Sciences, 2011, v. 13(2), pp. 399–403. https://doi.org/10.1016/j.solidstatesciences. 2010.11.045 Gelbstein Y., Dado B., Ben-Yehuda O., Sadia Y., Dashevsky Z., Dariel M. P. High thermoelectric fi gure of merit and nanostructuring in bulk p-type Gex(SnyPb1–y)1–x Te alloys following a spinodal decomposition reaction. Chemistry of Materials, 2010, v. 22(3), pp. 1054–1058. https://doi.org/10.1021/cm902009t Yarembash E. I., Eliseev A. A. Khal’kogenidy redkozemel’nykh elementov: sintez i kristallokhimiya [Chalcogenides of rare-earth elements: synthesis and crystal chemistry]. Moscow, Nauka Publ., 1975, p. 258. (in Russ.) Mukhtarova Z. M., Bakhtiyarly I. B., Azhdarova D. S. Politermicheskoye secheniye Ge0.80 Te0.20–Sm0.80 Te0.20. khim. zhurn., 2010, no. 4, pp. 144–146. Mukhtarova Z. M., Bakhtiyarly I. B., Azhdarova D. S. Issledovaniye politermicheskogo secheniye Ge0.84Te0.16–Sm5Ge2Te7 v troynoy sisteme Ge–Te–Sm. Aze-rb. khim. zhurn., 2011, no. 4, pp. 57–59.

Remarkably high thermoelectric performance of Cu2−xLixSe bulks with nanopores

2018 ◽  
Vol 6 (46) ◽  
pp. 23417-23424 ◽  
Author(s):  
Qiujun Hu ◽  
Zheng Zhu ◽  
Yuewen Zhang ◽  
Xin-Jian Li ◽  
Hongzhang Song ◽  
...  
Keyword(s):  
Thermoelectric Properties ◽  
Thermoelectric Performance ◽  
Practical Applications ◽  
P Type

Cu2Se is a p-type semiconducting compound that possesses excellent thermoelectric properties which exhibit great potential for practical applications.

Lattice defects and thermoelectric properties: the case of p-type CuInTe2 chalcopyrite on introduction of zinc

2014 ◽  
Vol 43 (40) ◽  
pp. 15228-15236 ◽  
Author(s):  
Jiangfeng Yang ◽  
Shaoping Chen ◽  
Zhengliang Du ◽  
Xianglian Liu ◽  
Jiaolin Cui
Keyword(s):  
Thermoelectric Properties ◽  
Lattice Defects ◽  
Thermoelectric Performance ◽  
Multiple Defects ◽  
P Type

Multiple defects identified in Zn-substituted CuInTe2 are responsible for a reduced difference between d(In–Te)4b and d(Cu–Te)4a and an improvement in the thermoelectric performance.

scholarly journals Cost effective synthesis of p-type Zn-doped MgAgSb by planetary ball-milling with enhanced thermoelectric properties

RSC Advances ◽  
2018 ◽  
Vol 8 (62) ◽  
pp. 35353-35359 ◽  
Author(s):  
Yanyan Zheng ◽  
Chengyan Liu ◽  
Lei Miao ◽  
Hong Lin ◽  
Jie Gao ◽  
...  
Keyword(s):  
Ball Milling ◽  
Spark Plasma Sintering ◽  
Thermoelectric Properties ◽  
Cost Effective ◽  
Thermoelectric Performance ◽  
Plasma Sintering ◽  
Planetary Ball Milling ◽  
Spark Plasma ◽  
Effective Synthesis ◽  
P Type

Zn doped MgAgSb with improved purity and thermoelectric performance was synthesized via common planetary ball milling and spark plasma sintering.

scholarly journals Localized double phonon scattering and DOS induced thermoelectric enhancement of degenerate nonstoichiometric Li1−xNbO2 compounds

RSC Advances ◽  
2017 ◽  
Vol 7 (84) ◽  
pp. 53255-53264 ◽  
Author(s):  
Jamil Ur Rahman ◽  
Nguyen Van Du ◽  
Gul Rahman ◽  
V. M. García-Suárez ◽  
Won-Seon Seo ◽  
...  
Keyword(s):  
Thermoelectric Properties ◽  
Thermoelectric Material ◽  
Significant Role ◽  
Phonon Scattering ◽  
Thermoelectric Performance ◽  
Oxide Thermoelectric Material ◽  
P Type

We report the synthesis and thermoelectric properties of a new p-type oxide thermoelectric material (Li1−xNbO2, with x = 0–0.6), in which Li-vacancies play a significant role in the enhancement of the thermoelectric performance.

scholarly journals Thermoelectric Properties of Arsenic Triphosphide (AsP3) Monolayer: A First-Principles Study

2021 ◽  
Vol 7 ◽  
Author(s):  
Liangshuang Fan ◽  
Hengyu Yang ◽  
Guofeng Xie
Keyword(s):  
Thermal Conductivity ◽  
Seebeck Coefficient ◽  
Thermoelectric Properties ◽  
First Principles ◽  
Transport Theory ◽  
Thermoelectric Performance ◽  
Performance Tuning ◽  
Boltzmann Transport ◽  
Boltzmann Transport Theory ◽  
P Type

Recently, monolayer of triphosphides (e.g., InP3, SnP3, and GaP3) attracts much attention due to their good thermoelectric performance. Herein, we predict a novel triphosphide monolayer AsP3 and comprehensively investigate its thermoelectric properties by combining first-principles calculations and semiclassical Boltzmann transport theory. The results show that AsP3 monolayer has an ultralow thermal conductivity of 0.36 and 0.55 Wm K−1 at room temperature along the armchair and zigzag direction. Surprisingly, its maximum Seebeck coefficient in the p-type doping reaches 2,860 µVK−1. Because of the ultralow thermal conductivity and ultrahigh Seebeck coefficient, the thermoelectric performance of AsP3 monolayer is excellent, and the maximum ZT of p-type can reach 3.36 at 500 K along the armchair direction, which is much higher than that of corresponding bulk AsP3 at the same temperature. Our work indicates that the AsP3 monolayer is the promising candidate in TE applications and will also stimulate experimental scientists’ interest in the preparation, characterization, and thermoelectric performance tuning.

scholarly journals A p-type multi-wall carbon nanotube/Te nanorod composite with enhanced thermoelectric performance

RSC Advances ◽  
2018 ◽  
Vol 8 (16) ◽  
pp. 8739-8746 ◽  
Author(s):  
Dabin Park ◽  
Hyun Ju ◽  
Taeseob Oh ◽  
Jooheon Kim
Keyword(s):  
Carbon Nanotube ◽  
Thermoelectric Properties ◽  
Thermoelectric Performance ◽  
Multi Walled Carbon Nanotube ◽  
P Type ◽  
Multi Wall Carbon Nanotube

In this study, multi-walled carbon nanotube (MWCNT)/tellurium (Te) nanorod composites with various MWCNT contents are prepared and their thermoelectric properties are investigated.

scholarly journals Effect of Mechanical Deformation on Thermoelectric Properties of p-Type(Bi0.225Sb0.775)2Te3Alloys

2013 ◽  
Vol 2013 ◽  
pp. 1-6 ◽  
Author(s):  
Sung-Jin Jung ◽  
Seong Keun Kim ◽  
Hyung-Ho Park ◽  
Dow-Bin Hyun ◽  
Seung-Hyub Baek ◽  
...  
Keyword(s):  
Grain Size ◽  
Seebeck Coefficient ◽  
Thermoelectric Properties ◽  
Annealing Time ◽  
Mechanical Deformation ◽  
Grain Structure ◽  
Thermoelectric Performance ◽  
Quartz Ampoule ◽  
P Type ◽  
Cold Pressed

The effect of mechanical deformation and annealing on thermoelectric properties of p-type (Bi0.225Sb0.775)Te3was performed. The ingots were prepared by melting, followed by quenching method using source materials with compositions of (Bi0.225Sb0.775)2Te3. Rectangular shaped specimens (5×5×12 mm3) were cut from ingots and then cold-pressed at 700 MPa for 2 to 20 times by changing the press direction perpendicular to previous one. The cold-pressed samples have been annealed in a quartz ampoule at 573 K. The grain size of the samples was controlled by the number of cold-pressing process and annealing time. Fine grain structure with a grain size of not more than 10 μm is obtained in highly deformed samples. The Seebeck coefficient of the deformed samples were gradually increased with annealing and converged to the similar value of about 225 μV/K after 30 hrs. The small grain size in highly deformed sample enables a rapid increase of Seebeck coefficient with annealing time (~2 hrs.), indicating that the thermal energy needed to recrystallize in highly deformed specimens is lower than that in low deformed specimens.Zvalues are rapidly increased with annealing time especially in highly deformed alloys, and converge to about3.0×10−3/K at room temperature. A higher thermoelectric performance could be expected by the optimization of composition and microstructural adjustment. The present study experimentally demonstrates a simple and cost-effective method for fabricating Bi-Te-based alloys with higher thermoelectric performance.

High Thermoelectric Performance of p-Type Bi0.5Sb1.5Te3+xTe Crystals Prepared via Gradient Freezing

2012 ◽  
Vol 621 ◽  
pp. 167-171
Author(s):  
Tao Hua Liang ◽  
Shi Qing Yang ◽  
Zhi Chen ◽  
Qing Xue Yang
Keyword(s):  
Thermal Conductivity ◽  
Seebeck Coefficient ◽  
Carrier Concentration ◽  
Thermoelectric Properties ◽  
Figure Of Merit ◽  
Room Temperature ◽  
Thermoelectric Performance ◽  
Thermoelectric Figure Of Merit ◽  
Thermoelectric Figure ◽  
P Type

p-type Bi0.5Sb1.5Te3+xTe thermoelectric crystals with various percentages of Te (x = 0.00 wt.%–3.00 wt.%) excess were prepared by the gradient freeze method. By doping with different Te contents, anti-site defects, Te vacancies and hole carrier concentrations were controlled. The Seebeck coefficient, resistivity, thermal conductivity, carrier concentration, and mobility were measured. The relationships between the Te content and thermoelectric properties were investigated in detail. The results suggested that the thermoelectric figure of merit ZT of the Bi0.5Sb1.5Te3+0.09wt.% crystals was 1.36 near room temperature, the optimum carrier concentration was 1.25 × 1019 cm-3, and the mobility was 1480 cm2 V-1 S-1, respectively.

scholarly journals Advances in Synthesis of π-Extended Benzosilole Derivatives and Their Analogs

Molecules ◽  
2020 ◽  
Vol 25 (3) ◽  
pp. 548
Author(s):  
Tuan Thanh Dang ◽  
Hue Minh Thi Nguyen ◽  
Hien Nguyen ◽  
Tran Ngoc Dung ◽  
Minh Tho Nguyen ◽  
...  
Keyword(s):  
Solar Cells ◽  
Physical Properties ◽  
Electronic Materials ◽  
Advanced Materials ◽  
Potential Applications

Benzosiloles and their π-extended derivatives are present in many important advanced materials due to their excellent physical properties. Especially, they have found many potential applications in the development of novel electronic materials such as OLEDs, semiconductors and solar cells. In this review, we have summarized several main approaches to construct (di)benzosilole derivatives and (benzo)siloles fused to aromatic five- and six-membered heterocycles.

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