scholarly journals А New Method of Obtaining Transparent Conducting Films of Indium (III) Oxide and Indium-Tin Oxide

Author(s):  
Natalia P. Fadeeva ◽  
Svetlana V. Saikova ◽  
Elena V. Pikurova ◽  
Anton S. Voronin ◽  
Yuri V. Fadeev ◽  
...  

In the work, sedimentation-stable sols of indium (III) and tin (IV) hydroxides were obtained by the Anion Resin Exchange Precipitation, which consists of the exchange reaction between the OH ions of the anion exchange resin and the anions of metal-containing solutions. The synthesized hydrosols were used to obtain conducting films of indium (III) In2O3 oxide and indium oxide doped with Tin In2O3: Sn, with a surface resistance of 4 kOhm/sq, thicknesses of 200–500 nm and a transparency of more than 85 %. The modes of applying precursors to glass substrates by the modified spray method and centrifugation method are selected. Films were studied using XRD, SEM, optical microscopy and spectrophotometry

ChemInform ◽  
2007 ◽  
Vol 38 (6) ◽  
Author(s):  
Fattakhova-Rohlfing Fattakhova-Rohlfing ◽  
Torsten Brezesinski ◽  
Jiri Rathousky ◽  
Armin Feldhoff ◽  
Torsten Oekermann ◽  
...  

2006 ◽  
Vol 18 (22) ◽  
pp. 2980-2983 ◽  
Author(s):  
D. Fattakhova-Rohlfing ◽  
T. Brezesinski ◽  
J. Rathouský ◽  
A. Feldhoff ◽  
T. Oekermann ◽  
...  

Nanomaterials ◽  
2019 ◽  
Vol 9 (2) ◽  
pp. 178 ◽  
Author(s):  
Dong Lee ◽  
G. Mohan Kumar ◽  
P. Ilanchezhiyan ◽  
Fu Xiao ◽  
Sh.U. Yuldashev ◽  
...  

In this paper, a photodetector based on arrayed CdTe microdots was fabricated on Bi coated transparent conducting indium tin oxide (ITO)/glass substrates. Current-voltage characteristics of these photodetectors revealed an ultrahigh sensitivity under stress (in the form of force through press) while compared to normal condition. The devices exhibited excellent photosensing properties with photoinduced current increasing from 20 to 76 μA cm−2 under stress. Furthermore, the photoresponsivity of the devices also increased under stress from 3.2 × 10−4 A/W to 5.5 × 10−3 A/W at a bias of 5 V. The observed characteristics are attributed to the piezopotential induced change in Schottky barrier height, which actually results from the piezo-phototronic effect. The obtained results also demonstrate the feasibility in realization of a facile and promising CdTe microdots-based photodetector via piezo-phototronic effect.


Materials ◽  
2021 ◽  
Vol 14 (17) ◽  
pp. 4959
Author(s):  
Ke-Ding Li ◽  
Po-Wen Chen ◽  
Kao-Shuo Chang

Here, we compare two different transparent conducting oxides (TCOs), namely indium tin oxide (ITO) and indium zinc tin oxide (IZTO), fabricated as transparent conducting films using processes that require different temperatures. ITO and IZTO films were prepared at 230 °C and at room temperature, respectively, on glass and polyethylene terephthalate (PET) substrates using reactive magnetron sputtering. Electrochromic WO3 films deposited on ITO-based and IZTO-based ECDs using vacuum cathodic arc plasma (CAP) were investigated. IZTO-based ECDs have higher optical transmittance modulation, ΔT = 63% [from Tbleaching (90.01%) to Tcoloration (28.51%)], than ITO-based ECDs, ΔT = 59%. ECDs consisted of a working electrochromic electrode (WO3/IZTO/PET) and a counter-electrode (Pt mesh) in a 0.2 M LiClO4/perchlorate (LiClO4/PC) liquid electrolyte solution with an active area of 3 cm × 4 cm a calculated bleaching time tc of 21.01 s and a coloration time tb of 4.7 s with varying potential from −1.3 V (coloration potential, Vc) to 0.3 V (bleaching potential, Vb).


2003 ◽  
Vol 763 ◽  
Author(s):  
K. Matsubara ◽  
H. Tampo ◽  
A. Yamada ◽  
P. Fons ◽  
K. Iwata ◽  
...  

AbstractLow resistivity and transparent Al doped ZnMgO films were deposited on glass substrates by a pulsed laser deposition system. For up to 32 atm% of Mg content, segregation of a MgO phase was not observed. The bandgap of these films could be widened to about 4 eV with increasing Mg content. The relation between bandgap and resistivity was found to be a trade-off; i.e. the larger the bandgap, the higher the resistivity. The maximum bandgap among films with an electrical resistivity of less than 10-3 Ω cm was 3.94 eV. The average optical transmittance of these films was more than 90 % for wavelengths λ between 400 and 1100 nm. The transmittance around λ = 330 nm was still 50 %.


1983 ◽  
Author(s):  
S. S. Bawa ◽  
S. S. Sharma ◽  
S. A. Agnihotry ◽  
A. M. Biradar ◽  
Subhas Chandra

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