Size Effect in Silicon Irradiated with Self Ions

2021 ◽  
Vol 23 (3) ◽  
pp. 148-152
Author(s):  
P.A. Aleksandrov ◽  
◽  
E.K. Baranova ◽  
V.V. Budaragin ◽  
V.L. Litvinov ◽  
...  
Keyword(s):  
Spatial Distribution ◽  
Size Effect ◽  
Silicon Wafers ◽  
Structural Defects ◽  
Silicon Sample ◽  
Silicon Ions

The influence of the thickness of a silicon sample irradiated by silicon ions on the spatial distribution of primary structural defects, phonons, and induced charges is considered. The calculations were performed using the SRIM2013program. The results can be used to analyze the interaction of other types of radiation with silicon wafers, in particular with neutrons.

Anomalous Transient Diffusion of Ion Implanted Boron during Rapid Thermal Annealing

1989 ◽  
Vol 146 ◽  
Author(s):  
Y. M. Kim ◽  
G. Q. Lo ◽  
D. L. Kwong ◽  
H. H. Tseng ◽  
R. Hance
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Anomalous Diffusion ◽  
Low Dose ◽  
Silicon Wafers ◽  
Silicon Ions ◽  
Defect Evolution ◽  
Boron Implantation ◽  
Silicon Implantation ◽  
Ion Implanted

ABSTRACTEffects of defect evolution during rapid thermal annealing (RTA) on the anomalous diffusion of ion implanted boron have been studied by implanting silicon ions prior to boron implantation with doses ranging from 1 × 1014cm−2 to 1 × 1016cm−2 at energies ranging from 20 to 150 KeV into silicon wafers. Diffusion of boron atoms implanted into a Si preamorphized layer during RTA is found to be anomalous in nature, and the magnitude of boron displacement depends on the RTA temperature. While RTA of preamorphized samples at 1150°C shows an enhanced boron displacement compared to that in crystalline samples, a reduced displacement is observed in preamorphized samples annealed by RTA at 1000°C. In addition, low dose pre-silicon implantation enhances the anomalous displacement significantly, especially at high RTA temperatures (1 150°C). Finally, the anomalous diffusion is found to depend strongly on the defect evolution during RTA.

Spatial distribution of structural defects in Cz-seeded directionally solidified silicon ingots: An etch pit study

2018 ◽  
Vol 483 ◽  
pp. 183-189 ◽  
Author(s):  
A. Lantreibecq ◽  
M. Legros ◽  
N. Plassat ◽  
J.P. Monchoux ◽  
E. Pihan
Keyword(s):  
Spatial Distribution ◽  
Structural Defects ◽  
Directionally Solidified ◽  
Etch Pit

Characterisation of Dislocation-Content in Multicrystalline-Silicon Wafers

2013 ◽  
Vol 205-206 ◽  
pp. 65-70
Author(s):  
Ali Ghaderi ◽  
Semih Senkader
Keyword(s):  
Silicon Wafers ◽  
Multicrystalline Silicon ◽  
Structural Defects ◽  
Limiting Factor ◽  
Solar Cell Efficiency ◽  
Cell Efficiency ◽  
Etch Pit ◽  
Process Characterization ◽  
Crystallisation Process ◽  
Dislocation Content

A major performance limiting factor of multicrystalline silicon wafers is structural defects, mainly dislocations, reducing solar cell efficiency. Dislocations are formed during crystallisation process. Characterization of dislocation-content is necessary both to optimise the crystallisation and to eliminate bad wafers before cell processing. We developed two techniques to characterise dislocations: conventional etch-pit counting modified for full size wafers using a new etch-recipe and a novel etch-pit counting algorithm. Secondly we developed a technique to estimate the dislocation content directly from photoluminescence images of as-cut wafers.

Structural and Luminescent Properties of Implanted Silicon Layers with Dislocation-Related Luminescence

2009 ◽  
Vol 156-158 ◽  
pp. 573-578
Author(s):  
N.A. Sobolev ◽  
Kalyadin ◽  
R.N. Kyutt ◽  
Elena I. Shek ◽  
V.I. Vdovin
Keyword(s):  
Room Temperature ◽  
Luminescent Properties ◽  
Structural Defects ◽  
Extended Defects ◽  
Oxygen Ions ◽  
Luminescence Centers ◽  
Annealing Conditions ◽  
Silicon Ions ◽  
Higher Temperature ◽  
Dislocation Related Luminescence

Structural and luminescence properties have been studied in silicon layers with dislocation-related luminescence. Multiple room temperature implantation of oxygen ions with doses low than the amorphization threshold was carried out. Silicon ions with a dose exceeding the amorphization threshold by two orders of magnitude were implanted at a higher temperature (≥ 80°C). Both the implantations were not followed by the amorphization of the implanted layers. Annealing in a chlorine-containing atmosphere resulted in formation of extended structural defects and luminescence centers. Some regularities and peculiarities in the properties of the extended defects and dislocation-related luminescence lines were revealed in dependence on the implantation and annealing conditions.

Weibull strength size effect of diamond wire sawn photovoltaic silicon wafers

2020 ◽  
Vol 40 (15) ◽  
pp. 5357-5368
Author(s):  
Louise Carton ◽  
Roland Riva ◽  
Daniel Nélias ◽  
Marion Fourmeau
Keyword(s):  
Size Effect ◽  
Silicon Wafers ◽  
Diamond Wire

MACROSCOPIC SIZE EFFECT OF INTER-LANDAU-LEVEL SCATTERING IN QUANTUM HALL SYSTEMS

2004 ◽  
Vol 18 (27n29) ◽  
pp. 3789-3796
Author(s):  
Y. KAWANO ◽  
T. OKAMOTO
Keyword(s):  
Spatial Distribution ◽  
Size Effect ◽  
Landau Level ◽  
Quantum Hall ◽  
Channel Width ◽  
Experimental Demonstration ◽  
Quantum Hall Systems ◽  
Cyclotron Emission

We present the experimental demonstration of a remarkable size effect of inter-Landau-level scattering (ILLS) in a quantum Hall bar. This observation has become possible by imaging cyclotron emission. The images obtained clearly reveal that spatial distribution of ILLS macroscopically depends on channel width of the device.

scholarly journals Getters in silicon

2019 ◽  
Vol 5 (1) ◽  
pp. 1-11
Author(s):  
Vyacheslav A. Kharchenko
Keyword(s):  
Gas Phase ◽  
Structural Defect ◽  
Surface Region ◽  
Silicon Wafers ◽  
Device Fabrication ◽  
Structural Defects ◽  
Wafer Surface ◽  
Dislocation Network ◽  
Oxygen Impurity ◽  
Dislocation Generation

Gettering of rapidly diffusing metallic impurities and structural defects in silicon which is the main material for IC fabrication, high-power high-voltage devices and neutron doped silicon has been studied. Structural defect based getters and gas phase getters based on chlorine containing compounds have been analyzed. Formation of structural defect based getters requires producing intrinsic sources of dislocation generation and precipitate/dislocation agglomerate formation. We show that dislocations are generated at microcrack mouths and form a low-mobility dislocation network at inactive wafer sides. In the latter case the defects are generated in the wafer region adjacent to the active layer of the electronic component. The generation of intrinsic getters is based on the decomposition of the supersaturated oxygen solid solution in silicon which favors the formation of a complex defect system in silicon that consists of various precipitate/dislocation agglomerates. Stacking faults also form, i.e., oxide precipitates with Frank’s dislocation loop clouds. Two intrinsic getter formation methods have been considered: one is related to oxygen impurity drain from the wafer surface region and the other implies accurate control of vacancy distribution over wafer thickness. We have analyzed the effect of getters as defect structures on the reduction of the mechanical stress required for dislocation generation onset which may eventually determine the mechanical strength of silicon wafers. The mechanism of impurity and defect gettering by gas phase medium with chlorine-containing compound additions has been considered. We show that silicon atom interaction with chlorine in the surface wafer region at high temperatures may cause the formation of vacancies which may penetrate to the specimen bulk with some probability. This leads to the case ∆Сv > 0 and ∆Ci ≤ 0, which changes the composition and density of the microdefects. Examples have been given for practical use of heat treatment of silicon wafers in a chlorine-containing atmosphere during oxide film application with the aim to dissolve microdefects, drain rapidly diffusing impurities from crystal bulk and prevent the formation of generation/recombination centers during device fabrication and silicon neutron doping.

Ion-Assisted Deposition of Silicon Epitaxial Films with High Deposition Rate Using Low Energy Silicon Ions

2000 ◽  
Vol 609 ◽  
Author(s):  
Lars Oberbeck ◽  
Thomas A. Wagner ◽  
Ralf B. Bergmann
Keyword(s):  
Epitaxial Films ◽  
Thin Film Solar Cells ◽  
High Rate ◽  
Structural Defects ◽  
Epitaxial Layers ◽  
High Deposition Rate ◽  
Extended Defects ◽  
Microelectronic Devices ◽  
Silicon Ions ◽  
Inhomogeneous Density

ABSTRACTIon-assisted deposition (IAD) enables low temperature (≥ 435°C), high-rate (≤ 0.5 μm/min) epitaxial growth of silicon films. Therefore, IAD is an interesting deposition technique for microelectronic devices and thin film solar cells. The Hall-mobility of monocrystalline epitaxial layers increases with deposition temperature Tdep and reaches values comparable to those of bulk Si at Tdep ≥ 540°C. Polycrystalline epitaxial layers exhibit inhomogeneous electrical properties, as shown by Light Beam Induced Current measurements. Recombination within the grains dominates over recombination at grain boundaries. Secco etching identifies an inhomogeneous density of extended structural defects in the polycrystalline epitaxial layers and in the substrate. A major part of the extended defects in the epitaxial layers originates from defects in the substrate.

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