Simulation of Power RF GaN Transistors Thermal Parameters in Pulse Mode
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This paper contains research results of thermal process in power GaN RF transistor in silicon substrate for pulse mode. Thermal mode research was done using computer simulation. Authors developed methodic allows significant decrease computational complexity. The dependences of maximum transistor channel temperature and thermal resistance as function of pulse width (with constant duty cycle) were done. Thermal simulation was done for power GaN RF transistor with overall gate width 2.1 mm.
2019 ◽
Vol 11
(7)
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pp. 625-634
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2014 ◽
Vol 610
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pp. 339-344
2014 ◽
Vol 635-637
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pp. 971-977
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2018 ◽
Vol 28
(4)
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2020 ◽
Vol 1648
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pp. 032139
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