Composition and Optical Dispersion Characterization of Nanoparticles ZnO-NiO Thin Films: Effect of Annealing Temperature

Thin films of ZnO0.7NiO0.3 have deposited on glass substrates at room temperature by using thermal evaporation technique under vacuum 10-5 mbar. The optical properties and dispersion parameters of the films have been studied. Changes in direct optical energy band gap of films were confirmed before and after annealing. The optical energy gap Eg decreased from 3.11 to 2.86 eV with increasing of annealing temperature to 200 °C. Some of the optical absorption parameters, such as optical dispersion energies Eo and Ed, Urbach tails EU , dielectric constant ε, the average values of oscillator strength So, and wavelength of single oscillator λo have been reported. An increase in the annealing temperature causes an increase in the average oscillator strength from 62.02 to 87.71 eV.

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The effect of heat treatment on the optical properties of organic semiconductor (NiPc/C60) thin films

Iraqi Journal of Physics (IJP) ◽

10.30723/ijp.v16i39.100 ◽

2019 ◽

Vol 16 (39) ◽

pp. 33-41

Author(s):

Atheer M. Mkhaiber

Keyword(s):

Crystal Structure ◽

Thin Films ◽

Optical Properties ◽

Optical Absorption ◽

Annealing Temperature ◽

Energy Gap ◽

Optical Absorption Spectra ◽

Optical Energy Gap ◽

Optical Energy ◽

Glass Substrates

Thin films of the blended solution of (NiPc/C60) on glass substrates were prepared by spin-coated method for three different ratios (100/1, 100/10 and 100/100). The effects of annealing temperature and C60 concentration on the optical properties of the samples were studied using the UV-Vis absorption spectroscopy and FTIR spectra. The optical absorption spectrum consists of two main bands, Q and B band, with maxima at about (602-632) nm and (700-730) nm for Q1 and Q2 respectively, and (340-375) nm for B band. The optical energy gap were determined from optical absorption spectra, The variation of optical energy gap with annealing temperature was nonsystematic and this may be due to the improvement in crystal structure for thin films. While the energy gap decreased by increasing the concentration of C60 approaches from the energy gap of this compound.

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Effect of Pb percentage on optical parameters of PbxCd1-xSe thin films

Iraqi Journal of Physics (IJP) ◽

10.30723/ijp.v14i29.214 ◽

2019 ◽

Vol 14 (29) ◽

pp. 1-7

Author(s):

Farah Q. Kamil

Keyword(s):

Thin Films ◽

Thermal Evaporation ◽

Energy Gap ◽

Optical Measurements ◽

Optical Parameters ◽

Optical Energy Gap ◽

Optical Energy ◽

Glass Substrates

PbxCd1-xSe compound with different Pb percentage (i.e. X=0,0.025, 0.050, 0.075, and 0.1) were prepared successfully. Thin filmswere deposited by thermal evaporation on glass substrates at filmthickness (126) nm. The optical measurements indicated thatPbxCd1-xSe films have direct optical energy gap. The value of theenergy gap decreases with the increase of Pb content from 1.78 eV to1.49 eV.

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Indium doped ZnO Urbach energy and dispersion parameters of thin films

Iraqi Journal of Physics (IJP) ◽

10.30723/ijp.v12i24.324 ◽

2019 ◽

Vol 12 (24) ◽

pp. 75-80

Author(s):

Saad Farhan Oboudi

Keyword(s):

Thin Films ◽

Energy Gap ◽

Spray Pyrolysis Technique ◽

Wide Band ◽

Dispersion Parameters ◽

Optical Energy Gap ◽

Before And After ◽

Single Oscillator ◽

Absorption Measurements

The characterization of ZnO and ZnO:In thin films were confirmed by spray pyrolysis technique. The films were deposited onto glass substrate at a temperature of 450°C. Optical absorption measurements were also studied by UV-VIS technique in the wavelength range 300-900 nm which was used to calculate the optical constants. The changes in dispersion and Urbach parameters were investigated as a function of In content. The optical energy gap was decreased and the wide band tails were increased in width from 616 to 844 eV as the In content increased from 0wt.% to 3wt.%. The single–oscillator parameters were determined also the change in dispersion was investigated before and after doping.

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The role of annealing temperature on the optical energy gap and Urbach energy of Se:2%Sb thin films

Baghdad Science Journal ◽

10.21123/bsj.5.2.249-252 ◽

2008 ◽

Vol 5 (2) ◽

pp. 249-252

Author(s):

Baghdad Science Journal

Keyword(s):

Thin Films ◽

Annealing Temperature ◽

Urbach Energy ◽

Energy Gap ◽

Localized States ◽

Structural Defects ◽

Indirect Transition ◽

Optical Energy Gap ◽

Optical Energy

The optical energy gap(Eopt) and the width of the tails of localized states in the band gap (?E) for Se:2%Sb thin films prepared by thermal co-evaporation method as a function of annealing temperature are studied in the photon energy range ( 1 to 5.4)eV.Se2%Sb film was found to be indirect transition with energy gap of (1.973,2.077, 2.096, 2.17) eV at annealing temperature (295,370,445,520)K respectively. The Eopt and ?E of Se:2%Sb films as a function of annealing temperature showed an increase in Eopt and a decrease in ?E with increasing the annealing temperature. This behavior may be related to structural defects and dangling bonds.

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Optical Dispersion Characterization of Sprayed Zn1-xMnxO Thin Films

International Letters of Chemistry Physics and Astronomy ◽

10.18052/www.scipress.com/ilcpa.9.1 ◽

2013 ◽

Vol 9 ◽

pp. 1-8

Author(s):

Nadir F. Habubi ◽

Sami Salmann Chiad ◽

Saad Farhan Oboudi ◽

Ziad Abdulahad Toma

Keyword(s):

Doping Concentration ◽

Energy Gap ◽

Spray Pyrolysis Technique ◽

Dispersion Parameters ◽

Optical Energy Gap ◽

Oscillator Parameter ◽

Optical Energy ◽

Glass Substrates ◽

Single Oscillator ◽

Urbach Tails

Uniform and adherent Zn1-xMnxO films have been deposited by using spray pyrolysis technique on glass substrates. The optical properties and dispersion parameters of zinc oxide have been studied as a function of doping concentration with Mn. Changes in direct optical energy band gap of cobalt oxide films were confirmed after doping, the optical energy gap Eg increased from 3.13 eV for the undoped ZnO to 3.39 eV with increasing the doping concentration of Mn to 4%. The changes in dispersion parameters and Urbach tails were investigated. An increase in the doping concentration causes a decrease in the average oscillator strength. The single-oscillator parameter has been reported.

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Optical and Dispersion Parameters of ZnS Thin Films Prepared by Flash Evaporation Method

International Letters of Chemistry Physics and Astronomy ◽

10.18052/www.scipress.com/ilcpa.39.52 ◽

2014 ◽

Vol 39 ◽

pp. 52-63 ◽

Cited By ~ 4

Author(s):

Nabeel A. Bakr ◽

Nidhal N. Jandow ◽

Nadir F. Habubi

Keyword(s):

Thin Films ◽

Refractive Index ◽

Energy Gap ◽

Flash Evaporation ◽

Dispersion Parameters ◽

Optical Energy Gap ◽

Evaporation Method ◽

Glass Substrates ◽

Single Oscillator Model ◽

Dispersion Data

Zns thin films are obtained by flash evaporation method onto preheated glass substrates. The transmittance analysis allowed the determination of refractive index and thickness using envelope method. It was found that the refractive dispersion data obeyed the single oscillator model. The calculated value of the refractive index (no) was found to be equal to 2.27, which is in a good agreement with the value obtained from Cauchy’s fitting. Also the value of the optical energy gap, extinction coefficient, real and imaginary parts of the dielectric constant and optical conductivity have been measured.

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Optical and Structural Properties of CdS Quantum Dots Synthesized Using (MW-CBD) Technique

Iraqi Journal of Nanotechnology ◽

10.47758/ijn.vi1.29 ◽

2020 ◽

pp. 44-52

Author(s):

Ahmed Ahmed S. Abed ◽

Sattar J. Kasim ◽

Abbas F. Abbas

Keyword(s):

Thin Films ◽

Quantum Dots ◽

Room Temperature ◽

Energy Gap ◽

Cds Nanoparticles ◽

Cds Quantum Dots ◽

Optical Energy Gap ◽

Glass Substrates ◽

High Adhesion ◽

Uv Visible

In the present study, the microwave heating method was used to prepare cadmium sulfide quantum dots CdSQDs films. CdS nanoparticles size average obtained as (7nm). The morphology, structure and composition of prepared CdSQDs were examined using (FE-SEM), (XRD) and (EDX). Optical properties of CdSQDs thin films formed and deposited onto glass substrates have been studied at room temperature using UV/ Visible spectrophotometer within the wavelength of (300-800nm), and Photoluminescence (PL) spectrum. The optical energy gap (Eg) which estimated using Tauc relation was equal (2.6eV). Prepared CdS nanoparticles thin films are free from cracks, pinholes and have high adhesion to substrate.

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Structural, Optical, and Optoelectrical Studies of Spray Pyrolyzed CuGaSnS4 Thin Films

ECS Journal of Solid State Science and Technology ◽

10.1149/2162-8777/ac4219 ◽

2021 ◽

Author(s):

Islam M El radaf ◽

Hnan Y Alzahrani

Keyword(s):

Thin Films ◽

Film Thickness ◽

Nonlinear Optical ◽

Energy Gap ◽

Structural Parameters ◽

Stoichiometric Composition ◽

Optical Energy Gap ◽

Linear Absorption ◽

Glass Substrates ◽

D Values

Abstract We deposited CuGaSnS4 thin films on soda-lima glass substrates via a spray pyrolysis process. The X-ray diffraction of CuGaSnS4 films established the formation of an orthorhombic single phase. In addition, the structural parameters of the CuGaSnS4 films were estimated by Debye-Scherer’s formulas, which showed that an enhancement in crystallite size (D) values occurred by increasing the thickness of the investigated films. The EDAX pattern of CuGaSnS4 films confirms a stoichiometric composition. The optical results revealed that the CuGaSnS4 films possessed a direct optical energy gap (Eg). The Eg values were reduced from 1.50 to 1.38 eV with the increase in thickness. Also, there was an observed increase in the linear refractive index and the linear absorption coefficient values occurred due to the increased thickness. Finally, the optoelectrical constants of the sprayed CuGaSnS4 films such as the optical conductivity (σopt) and the optical free carrier concentration to effective mass (N_opt/m^* ) were enlarged with increasing film thickness. The nonlinear optical study showed that the increase in film thickness enhanced the nonlinear optical constants of CuGaSnS4 films. The hot-probe procedure shows that the sprayed CuGaSnS4 films expose p-type conductivity.

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Influence of Annealing Temperature on Structural, Morphological, Optical and Electrical Properties of Sol-Gel SnO2 Thin Films

Journal of Nano Research ◽

10.4028/www.scientific.net/jnanor.52.15 ◽

2018 ◽

Vol 52 ◽

pp. 15-20 ◽

Cited By ~ 1

Author(s):

Ji Tao Li ◽

Ding Yu Yang ◽

Xing Hua Zhu ◽

Xu Li ◽

Shu Qi Chen ◽

...

Keyword(s):

Thin Films ◽

Electrical Properties ◽

Annealing Temperature ◽

Energy Gap ◽

Raw Materials ◽

Sol Gel ◽

Optical Energy Gap ◽

Sem Images ◽

Rutile Structure ◽

Chloride Dihydrate

SnO2 thin films were prepared on glass substrates by sol-gel spin coating method using stannous chloride dihydrate and ethyl alcohol absolute as raw materials at annealing temperature 450-550 °C. The crystal phase was measured by X-ray diffraction (XRD) and showed tetragonal rutile structure with a preferential orientation of (110). Atomic force microscope (AFM) and Scanning Electron Microscope (SEM) images revealed the homogeneous grains distribution, and SEM images showed the obvious rectangular objects corresponding to tetragonal structure. Optical properties were observed by the transmittance in ultraviolet-visible (UV-Vis) region and optical energy gap, which revealed the transmittance over 75% and energy gap between 3.84 eV and 3.89 eV. Finally, I-V characteristics were tested to research electrical properties, and found the gradual non-linear property and the increase of resistance.

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